CN108463882B - 导热片、导热片的制造方法、散热构件和半导体装置 - Google Patents
导热片、导热片的制造方法、散热构件和半导体装置 Download PDFInfo
- Publication number
- CN108463882B CN108463882B CN201780006145.4A CN201780006145A CN108463882B CN 108463882 B CN108463882 B CN 108463882B CN 201780006145 A CN201780006145 A CN 201780006145A CN 108463882 B CN108463882 B CN 108463882B
- Authority
- CN
- China
- Prior art keywords
- thermally conductive
- conductive sheet
- molded body
- sheet
- carbon fibers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/02—Fibres or whiskers
- C08K7/04—Fibres or whiskers inorganic
- C08K7/06—Elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2383/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
- C08K2003/282—Binary compounds of nitrogen with aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/271—Manufacture and pre-treatment of the layer connector preform
- H01L2224/2711—Shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/276—Manufacturing methods by patterning a pre-deposited material
- H01L2224/27602—Mechanical treatment, e.g. polishing, grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/278—Post-treatment of the layer connector
- H01L2224/27848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
- H01L2224/29291—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29393—Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/166—Material
- H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/16717—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
- H01L2924/16724—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/166—Material
- H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/16738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/16747—Copper [Cu] as principal constituent
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Combustion & Propulsion (AREA)
- Thermal Sciences (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
本发明提供含有粘合剂树脂、碳纤维和上述碳纤维以外的导热性填料的导热片,其中上述碳纤维与上述粘合剂树脂的质量比(碳纤维/粘合剂树脂)小于1.30,上述导热性填料的含量为48体积%~70体积%,上述碳纤维在上述导热片的厚度方向上取向。
Description
技术领域
本发明涉及在半导体元件等发热体与散热片等散热体之间配置的导热片、导热片的制造方法以及具有上述导热片的散热构件和半导体装置。
背景技术
以往,在个人计算机等各种电器、其他机器中搭载的半导体元件中,由于驱动而产生热,如果所产生的热蓄积,则会对半导体元件的驱动、周边机器产生不好影响,因此,采用各种冷却手段。作为半导体元件等电子部件的冷却方法,已知有在该机器上安装风扇来将机箱内的空气冷却的方式、在要进行这样的冷却的半导体元件上安装散热风扇、散热板等散热片(heat sink)的方法等。
在上述半导体元件上安装散热片来进行冷却时,为了能将半导体元件的热效率良好地释放,在半导体元件与散热片之间设置导热片。作为这样的导热片,广泛使用使导热性填料等填充剂分散含有在有机硅树脂中而成的导热片,作为导热性填料之一,适合采用碳纤维(例如,参照专利文献1~4)。
但是,就含有碳纤维的导热片而言,虽然导热性优异,但存在导电性易于升高的问题。
因此,以提高导热片的绝缘性为目的,提出了分别按照特定比例含有碳纤维和电绝缘性导热填充剂的导热片(例如,参照专利文献5)。
但是,这些已提出的技术中,存在不能得到近年来所要求的高导热性的问题。
现有技术文献
专利文献
专利文献1:日本专利第5671266号公报
专利文献2:日本特开2005-54094号公报
专利文献3:日本专利第5660324号公报
专利文献4:日本专利第4791146号公报
专利文献5:日本特开2002-003717号公报
发明内容
发明要解决的课题
本发明以解决以往的上述各问题,实现以下的目的为课题。即,本发明的目的在于,提供具有高导热性的同时绝缘性也优异的导热片及其制造方法,以及使用上述导热片的散热构件和半导体装置。
解决课题的方法
如下所述为用于解决上述课题的方法。即,
<1>一种导热片,其特征在于,含有粘合剂树脂、碳纤维和上述碳纤维以外的导热性填料;上述碳纤维与上述粘合剂树脂的质量比(碳纤维/粘合剂树脂)小于1.30,上述导热性填料的含量为48体积%~70体积%,上述碳纤维在上述导热片的厚度方向上取向。
<2>如上述<1>中记载的导热片,负荷0.5kgf/cm2时的压缩率为3%以上。
<3>如上述<1>至<2>中任一项记载的导热片,上述导热性填料含有氧化铝、氮化铝和氧化锌中的至少任一种。
<4>如上述<1>至<3>中任一项记载的导热片,上述粘合剂树脂为有机硅树脂。
<5>一种导热片的制造方法,所述导热片为上述<1>至<4>中任一项记载的导热片,其特征在于,包括:
通过将含有上述粘合剂树脂、上述碳纤维和上述导热性填料的导热性树脂组合物成型为预定形状并固化,得到上述导热性树脂组合物的成型体的工序,以及
将上述成型体切断为片状,得到成型体片的工序。
<6>如上述<5>中记载的导热片的制造方法,得到上述成型体的工序是在中空状的模具中,将上述导热性树脂组合物用挤出机挤出以成型为预定形状,进一步经过固化得到上述碳纤维沿着挤出方向取向的上述成型体的工序,
上述得到成型体片的工序是将上述成型体在相对于上述挤出方向的垂直方向上切断,得到片状的上述成型体片的工序。
<7>一种散热构件,其特征在于,具有:
使电子部件所发的热散热的散热器(heat spreader),和
配置于上述散热器并且夹持在上述散热器和上述电子部件之间的上述<1>至<4>中任一项记载的导热片。
<8>一种半导体装置,其特征在于,具有:
电子部件,
使上述电子部件所发的热散热的散热器,和
配置于上述散热器并且夹持在上述散热器和上述电子部件之间的上述<1>至<4>中任一项记载的导热片。
<9>如上述<8>中记载的半导体装置,具有散热片,并且在上述散热器与上述散热片之间夹持有上述<1>至<4>中任一项记载的导热片。
发明效果
根据本发明,能够解决以往的上述各问题,实现上述目的,能够提供具有高导热性的同时绝缘性也优异的导热片及其制造方法、以及使用上述导热片的散热构件和半导体装置。
附图说明
[图1]图1是显示本发明的导热片的制造方法的流程的一例的示意图。
[图2]图2是显示本发明所适用的导热片、散热构件和半导体装置的截面图。
具体实施方式
(导热片)
本发明的导热片至少含有粘合剂树脂、碳纤维和导热性填料,进一步,根据需要含有其他成分。
<粘合剂树脂>
作为上述粘合剂树脂,没有特别限制,能够对应于目的而适宜选择,例如,可以列举热固性聚合物等。
作为上述热固性聚合物,可以列举例如交联橡胶、环氧树脂、聚酰亚胺树脂、双马来酰亚胺树脂、苯并环丁烯树脂、酚树脂、不饱和聚酯、邻苯二甲酸二烯丙酯树脂、有机硅树脂、聚氨酯、聚酰亚胺硅氧烷(ポリイミドシリコーン)、热固型聚苯醚、热固型改性聚苯醚等。这些可以单独使用一种,也可以并用两种以上。
作为上述交联橡胶,可以列举例如天然橡胶、丁二烯橡胶、异戊二烯橡胶、丁腈橡胶、氢化丁腈橡胶、氯丁橡胶、乙丙橡胶、氯化聚乙烯、氯磺化聚乙烯、丁基橡胶、卤化丁基橡胶、氟橡胶、聚氨酯橡胶、丙烯酸橡胶、聚异丁烯橡胶、有机硅橡胶等。这些可以单独使用一种,也可以并用两种以上。
这些之中,从成形加工性、耐候性优异以及对于电子部件的密合性和追随性的角度,上述热固性聚合物特别优选为有机硅树脂。
作为上述的有机硅树脂,没有特别限制,可以根据目的而适当选择,优选为含有液态有机硅凝胶的主剂和固化剂的有机硅树脂。作为这样的有机硅树脂,可以列举例如加成反应型有机硅树脂、在加硫中使用过氧化物的热加硫型混炼(millable)型有机硅树脂等。其中,由于要求电子部件的散热面与散热片面的密合性,特别优选为加成反应型有机硅树脂。
作为上述的加成反应型有机硅树脂,优选以含乙烯基的聚有机硅氧烷为主剂、以含Si-H基的聚有机硅氧烷为固化剂的双液型的加成反应型有机硅树脂。
在上述液态有机硅凝胶的主剂和固化剂的组合中,作为上述主剂和上述固化剂的配合比例,没有特别限制,能够对应于目的而适宜选择。
作为上述粘合剂树脂的含量,没有特别限制,可以根据目的而适当选择,优选为10体积%~50体积%,更优选为15体积%~40体积%,特别优选为20体积%~40体积%。
需要说明的是,本说明书中用“~”所表示的数值范围,表示分别以“~”的前后记载的数值为最小值和最大值而包含的范围。
<碳纤维>
作为上述碳纤维,没有特别限制,能够对应于目的而适宜选择,例如,可以使用沥青系碳纤维、PAN系碳纤维、将PBO纤维进行石墨化而成的碳纤维、由电弧放电法、激光蒸发法、CVD法(化学气相生长法)、CCVD法(催化剂化学气相生长法)等合成的碳纤维。其中,从导热性的角度,特别优选为将PBO纤维进行石墨化而成的碳纤维、沥青系碳纤维。
需要说明的是,上述碳纤维不是被绝缘性材料被覆的碳纤维,上述碳纤维具有导电性。
对于上述碳纤维,根据需要,为了提高与上述被膜的密合性,可以对其一部分或者全部进行表面处理来使用。作为上述表面处理,可以列举例如氧化处理、氮化处理、硝化、磺化,或者在通过这些处理导入至表面的官能团或碳纤维的表面使金属、金属化合物、有机化合物等附着或结合的处理等。作为上述官能团,可以列举例如羟基、羧基、羰基、硝基、氨基等。
作为上述碳纤维的平均纤维长度(平均长轴长度),没有特别限制,可以根据目的而适当选择,优选为50μm~250μm,更优选为75μm~200μm,特别优选为90μm~170μm。
作为上述碳纤维的平均纤维直径(平均短轴长度),没有特别限制,可以根据目的而适当选择,优选为4μm~20μm,更优选为5μm~14μm。
作为上述碳纤维的纵横比(平均长轴长度/平均短轴长度),没有特别限制,可以根据目的而适当选择,优选为8以上,更优选为9~30。上述纵横比如果小于8,则碳纤维的纤维长度(长轴长度)较短,因此有时导热率会下降。
这里,上述碳纤维的平均长轴长度和平均短轴长度可以通过例如显微镜、扫描电子显微镜(SEM)等测定。
作为上述碳纤维的含量,没有特别限制,可以根据目的而适当选择,优选为2体积%~40体积%,更优选为3体积%~38体积%,特别优选为4体积%~30体积%。上述含量如果小于2体积%,则有时难以得到充分低的热阻,如果超过40体积%,则会对上述导热片的成型性和上述碳纤维的取向性产生影响。
上述碳纤维与上述粘合剂树脂的质量比(碳纤维/粘合剂树脂)小于1.30,优选为0.10以上且小于1.30,更优选为0.30以上且小于1.30,更加优选为0.50以上且小于1.30,特别优选为0.60以上且1.20以下。上述质量比如果为1.30以上,则上述导热片的绝缘性变得不充分。
此外,上述导热片如果不含有上述碳纤维,则上述导热片的热特性(尤其是导热性)变得不充分。
需要说明的是,上述导热片含有上述碳纤维。即,上述碳纤维与上述粘合剂树脂的质量比(碳纤维/粘合剂树脂)的下限值当然不能为0.00(上述质量比大于0.00)。
<导热性填料>
作为上述导热性填料,只要是上述碳纤维以外的导热性填料,就没有特别限制,能够对应于目的而适宜选择,例如,可以列举无机物填料等。
作为上述无机物填料,对于其形状、材质、平均粒径等没有特别限制,能够对应于目的而适宜选择。作为上述形状,没有特别限制,能够对应于目的而适宜选择,例如,可以列举球状、椭球状、块状、粒状、扁平状、针状等。其中,球状、椭圆形状从填充性的角度而优选,特别优选为球状。
需要说明的是,本说明书中,上述无机物填料与上述碳纤维不同。
作为上述无机物填料,例如,可以列举氮化铝(氮化铝:AlN)、二氧化硅、氧化铝(三氧化二铝)、氮化硼、二氧化钛、玻璃、氧化锌、碳化硅、硅(silicon)、氧化硅、氧化铝、金属粒子等。这些可以单独使用一种,也可以并用两种以上。其中,优选氧化铝、氮化硼、氮化铝、氧化锌、二氧化硅,从导热率的角度,特别优选氧化铝、氮化铝、氧化锌。
另外,也可以对上述无机物填料实施表面处理。作为上述表面处理,如果由偶联剂对上述无机物填料进行处理,则上述无机物填料的分散性提高,导热片的柔软性提高。
作为上述无机物填料的平均粒径,没有特别限制,能够对应于目的而适宜选择。
上述无机物填料为三氧化二铝时,其平均粒径优选为1μm~10μm,更优选为1μm~5μm,特别优选为3μm~5μm。上述平均粒径如果小于1μm,则有时粘度增大、变得难以混合,如果超过10μm,则有时上述导热片的热阻会变大。
上述无机物填料为氮化铝时,其平均粒径优选为0.3μm~6.0μm,更优选为0.3μm~2.0μm,特别优选为0.5μm~1.5μm。上述平均粒径如果小于0.3μm,则有时粘度增大、变得难以混合,如果超过6.0μm,则有时上述导热片的热阻会变大。
上述无机物填料的平均粒径例如能够通过粒度分布计、扫描电子显微镜(SEM)来测定。
上述导热性填料的含量为48体积%~70体积%,优选为50体积%~69体积%。上述含量如果小于48体积%或者超过70体积%,则难以兼顾绝缘性和高导热性。另外,上述含量如果小于48体积%或者超过70体积%,也难以制作导热片。
<其他成分>
作为上述其他成分,没有特别限制,能够对应于目的而适宜选择,例如,可以列举触变性赋予剂、分散剂、固化促进剂、延迟剂、微增粘剂、增塑剂、阻燃剂、抗氧化剂、稳定剂、着色剂等。
作为上述导热片的平均厚度,没有特别限制,可以根据目的而适当选择,优选为0.05mm~5.00mm,更优选为0.07mm~4.00mm,特别优选为0.10mm~3.00mm。
上述导热片的表面优选由从上述导热片渗出的渗出成分来覆盖,以便追随因突出的上述碳纤维所导致的凸形状。
将上述导热片的表面如此处理的方法可以通过例如后述的表面被覆工序来进行。
对于上述导热片,从防止所使用的半导体元件周边的电子回路的短路的角度,在施加1,000V电压时的体积电阻率优选为1.0×108Ω·cm以上,更优选为1.0×1010Ω·cm以上。上述体积电阻率例如按照JIS K-6911来测定。
作为上述体积电阻率的上限值,没有特别限制,能够对应于目的而适宜选择,例如,可以列举上述体积电阻率为1.0×1018Ω·cm以下。
对于上述导热片,从相对于电子部件和散热片的密合性的角度,负荷0.5kgf/cm2时的压缩率优选为3%以上,更优选为15%以上。
作为上述导热片的压缩率的上限值,没有特别限制,可以根据目的而适当选择,上述导热片的压缩率优选为30%以下。
上述导热片中,上述碳纤维在上述导热片的厚度方向上取向。通过这样,上述碳纤维与上述粘合剂树脂的前述的特定质量比和前述的上述导热性填料的特定含量共同作用,能够得到具有高导热性的同时绝缘性也优异的导热片。
这里,“碳纤维在导热片的厚度方向上取向”是指,上述导热片所含有的上述碳纤维中的45%以上相对于厚度方向在0°~45°的范围内取向。需要说明的是,上述碳纤维不是必须全部碳纤维都需要在相同方向上取向。
上述碳纤维的取向可以由例如电子显微镜来测定。
(导热片的制造方法)
本发明的导热片的制造方法至少包括成型体制作工序和成型体片制作工序,优选包括表面被覆工序,进一步根据需要包括其他工序。
上述导热片的制造方法是制造本发明的上述导热片的方法。
<成型体制作工序>
作为上述成型体制作工序,只要是通过将含有粘合剂树脂、碳纤维和导热性填料的导热性树脂组合物成型为预定形状并固化,得到上述导热性树脂组合物的成型体的工序,就没有特别限制,能够对应于目的而适宜选择。
-导热性树脂组合物-
上述导热性树脂组合物至少含有粘合剂树脂、碳纤维和导热性填料,进一步根据需要含有其他成分。
作为上述粘合剂树脂,可以列举上述导热片的说明中所例示的上述粘合剂树脂。
作为上述碳纤维,可以列举上述导热片的说明中所例示的上述碳纤维。
上述导热性填料,可以列举上述导热片的说明中所例示的上述导热性填料。
在上述成型体制作工序中,作为将上述导热性树脂组合物成型为预定形状的方法,没有特别限制,能够对应于目的而适宜选择,例如,可以列举挤出成型法、模具成型法等。
就上述成型体制作工序而言,从得到的导热片中容易使上述碳纤维在上述导热片的厚度方向上取向来考虑,优选是通过用挤出机在中空状的模具中将上述导热性树脂组合物挤出来成型为预定形状并进一步固化,从而得到上述碳纤维沿着挤出方向取向的上述成型体的工序。
成型体(大块状的成型体)的大小和形状可以根据所要求的导热片的大小来确定。例如,可以列举截面的纵向大小为0.5cm~15cm且横向大小为0.5cm~15cm的长方体。长方体的长度只要对应于需要来确定即可。
上述成型体制作工序中的上述导热性树脂组合物的固化优选为热固化。作为上述热固化的固化温度,没有特别限制,能够对应于目的而适宜选择,例如,在上述粘合剂树脂含有液态有机硅凝胶的主剂和固化剂时,优选为60℃~120℃。作为上述热固化的固化时间,没有特别限制,能够对应于目的而适宜选择,例如,可以列举0.5小时~10小时等。
<成型体片制作工序>
作为上述成型体片制作工序,只要是将上述成型体切断为片状、得到成型体片的工序,就没有特别限制,能够对应于目的而适宜选择,例如,能够通过切片装置来进行。
上述成型体片制作工序中,将上述成型体切断为片状,得到成型体片。在得到的上述成型体片的表面,上述碳纤维突出。这被认为是因为在通过切片装置等将上述成型体切断为片状时,由于上述粘合剂树脂的固化成分与上述碳纤维之间的硬度差,上述粘合剂树脂的固化成分被切片装置等切断构件拉伸而伸长,在上述成型体片表面,上述粘合剂树脂的固化成分从上述碳纤维表面被除去。
作为上述切片装置,没有特别限制,能够对应于目的而适宜选择,例如,可以列举超声波裁切机、刨子(鉋)等。作为上述成型体的切断方向,在成型方法为挤出成型法时,由于是在挤出方向上取向,因而相对于挤出方向优选为60度~120度,更优选为70度~100度,特别优选为90度(垂直)。
当上述成型体制作工序为通过用挤出机在中空状的模具中将上述导热性树脂组合物挤出来成型为预定形状并进一步固化、从而得到上述碳纤维沿着挤出方向取向的上述成型体的工序时,作为上述成型体片制作工序,优选是在相对于上述挤出方向的垂直方向上切断上述成型体从而得到片状的上述成型体片的工序。
作为上述成型体片的平均厚度,没有特别限制,可以根据目的而适当选择,优选为0.06mm~5.01mm,更优选为0.08mm~4.01mm,特别优选为0.11mm~3.01mm。
<表面被覆工序>
作为上述表面被覆工序,只要是由从上述成型体片渗出的渗出成分覆盖上述成型体片的表面以便追随因突出的上述碳纤维导致的凸形状的工序,就没有特别限制,能够对应于目的而适宜选择,例如,可以列举冲压处理、成型体片放置处理等。
这里,“渗出成分”是指包含在上述导热性树脂组合物中但对于固化没有帮助的成分,是非固化性成分、以及粘合剂树脂中没有固化的成分等。
-冲压处理-
作为上述冲压处理,只要是对上述成型体片进行冲压,由从上述成型体片渗出的渗出成分覆盖上述成型体片的表面以便追随因突出的上述碳纤维导致的凸形状的处理,就没有特别限制,能够对应于目的而适宜选择。
上述冲压例如可以使用包括平盘和表面平坦的冲头的一对冲压装置来进行。此外,也可以使用夹送辊来进行。
作为上述冲压时的压力,没有特别限制,可以根据目的而适当选择,但如果过低,则有与不进行冲压的情形相比热阻不变的倾向,如果过高,则有片延伸的倾向,因而优选为0.1MPa~100MPa,更优选为0.5MPa~95MPa。
作为上述冲压的时间,没有特别限制,可以根据粘合剂树脂的成分、冲压压力、片面积、渗出成分的渗出量等适宜选择。
上述冲压工序中,为了更加促进渗出成分渗出以及覆盖上述成型体片表面的效果,还可以使用内置有加热器的冲头,边加热边进行。为了提高这样的效果,优选加热温度在粘合剂树脂的玻璃化转变温度以上来进行。由此,能缩短冲压时间。
上述冲压工序中,通过对上述成型体片进行冲压,使渗出成分从上述成型体片渗出,并由上述渗出成分覆盖表面。因此,所得到的导热片相对于电子部件、散热器的表面的追随性、密合性提高,能够降低热阻。此外,由上述渗出成分进行的覆盖成为能够反映导热片表面的碳纤维的形状的程度的厚度时,能够避免热阻的上升。
需说明的是,成型体片通过被冲压从而在厚度方向上被压缩,能够增大碳纤维和导热性填料彼此接触的频率。由此,能够降低导热片的热阻。
上述冲压工序中,优选使用用于将上述成型体片压缩至预定厚度的间隔体来进行。即,对于导热片,例如,通过在与冲头对峙的载置面上配置间隔体来对成型体片进行冲压,能够形成为对应于间隔体高度的预定片厚。
-成型体片放置处理-
作为上述成型体片放置处理,只要是将上述成型体片放置并由从上述成型体片渗出的渗出成分覆盖上述成型体片的表面的处理,就没有特别限制,能够对应于目的而适宜选择。
关于由从成型体片渗出的粘合剂树脂的渗出成分覆盖成型体片的表面和从成型体片表面露出的上述碳纤维的处理,也可以替代上述冲压处理而变为上述成型体片放置处理。这种情况下,与冲压处理同样地,所得到的导热片相对于电子部件、散热器的表面的追随性、密合性提高,能够降低热阻。此外,由上述渗出成分进行的覆盖成为能够反映导热片表面的碳纤维的形状的程度的厚度时,能够避免热阻的上升。
作为上述放置的时间,没有特别限制,能够对应于目的而适宜选择。
这里,使用附图对本发明的导热片的制造方法的一例进行说明。
如图1所示,本发明的导热片经过挤出、成形、固化、切断(切片)等一系列工序来制造。
首先,将粘合剂树脂、碳纤维和导热性填料混合并搅拌,调制导热性树脂组合物。接着,在将调制好的导热性树脂组合物挤出成型时,经过多个狭缝从而使得在导热性树脂组合物中配合的碳纤维在挤出方向上取向,得到成型体。然后,在将得到的成型体固化后,由超声波裁切机将固化后的成型体在相对于挤出方向的垂直方向上切断为预定厚度,由此制作成型体片(导热片)。
(散热构件)
本发明的散热构件至少具有散热器和导热片,进一步根据需要具有其他构件。
(半导体装置)
本发明的半导体装置至少具有电子部件、散热器和导热片,进一步根据需要具有其他构件。
作为上述电子部件,没有特别限制,能够对应于目的而适宜选择,例如,可以列举CPU、MPU、图形计算元件等。
上述散热器只要是使上述电子部件所发的热散热的构件,就没有特别限制,能够对应于目的而适宜选择。
上述导热片是本发明的上述导热片,配置于上述散热器且夹持在上述散热器与上述电子部件之间。
使用附图,对本发明的半导体装置的一例进行说明。
图2是本发明的半导体装置的一例的概略截面图。本发明的导热片1是要将半导体元件等电子部件3所发的热散热的物体,如图2所示,导热片1固定在散热器2的与电子部件3对峙的主面2a上,夹持在电子部件3与散热器2之间。此外,导热片1夹持在散热器2与散热片5之间。而且,导热片1与散热器2一起,构成将电子部件3的热散热的散热构件。
散热器2形成为例如方形板状,具有与电子部件3对峙的主面2a和沿着主面2a的外周竖立的侧壁2b。关于散热器2,在由侧壁2b所包围的主面2a上设有导热片1,此外,在与主面2a相反侧的另一面2c上隔着导热片1设有散热片5。散热器2具有越高的导热率,则越能降低热阻,越能效率良好地吸收半导体元件等电子部件3的热,因而,例如,可以使用导热性良好的铜、铝来形成。
电子部件3例如是BGA等半导体元件,安装于配线基板6。此外,散热器2的侧壁2b的前端面也安装于配线基板6,由此,由侧壁2b隔开预定距离地包围电子部件3。
而且,通过在散热器2的主面2a上粘接有导热片1,从而形成吸收电子部件3所发的热并通过散热片5散热的散热构件。散热器2与导热片1的粘接可以通过导热片1自身的粘着力来进行,也可以适宜地使用粘接剂。作为粘接剂,可以使用承担导热片1向散热器2的粘接和导热的公知的散热性树脂,或者散热性的粘接膜。
实施例
接着,对本发明的实施例进行说明。本实施例中,改变导热性树脂组合物的粘合剂成分和固化剂成分的成分比来形成导热片的样品,对各样品进行各种评价。
(比较制造例1)
<绝缘被覆碳纤维的制作>
在聚乙烯制容器中,投入平均纤维直径9μm、平均纤维长度100μm的沥青系碳纤维(商品名XN-100-10M:日本石墨纤维(株)制)100g、四乙氧基硅烷(TEOS)200g、乙醇900g,用搅拌桨叶进行混合。
然后,一边升温至50℃,一边用5分钟投入反应引发剂(10%氨水)176g。以溶剂的投入结束时的时刻作为0分钟,进行3小时的搅拌。
搅拌结束后,降温,吸滤,回收固体成分,用水和乙醇清洗固体成分,再度进行吸滤,回收固体成分。
将回收的固体成分在100℃干燥2小时后,进一步在200℃进行8小时烧成,得到绝缘被覆碳纤维。
(评价)
对于比较制造例1中得到的绝缘被覆碳纤维,进行以下的评价。此外,关于电阻,对于未进行绝缘被覆的以下碳纤维也进行评价。评价结果示于表2。
试料1:
平均纤维直径9μm、平均纤维长度100μm的沥青系碳纤维(商品名XN-100-10M:日本石墨纤维(株)制)
试料2:
平均纤维直径9μm、平均纤维长度120μm的沥青系碳纤维(商品名XN-100-12M:日本石墨纤维(株)制)
试料3:
平均纤维直径9μm、平均纤维长度150μm的沥青系碳纤维(商品名XN-100-15M:日本石墨纤维(株)制)
(1)回收率
对于绝缘被覆碳纤维的样品,在测定其质量后,除以所使用的碳纤维的质量来进行回收率的计算。对于所算出的回收率,可知回收率越大则被覆的量就越大。
(2)被覆的膜厚
对于绝缘被覆碳纤维的各样品,使用聚焦离子束(FIB)切断后,使用透射电子显微镜(TEM)观察截面,测定被覆的平均膜厚。
(3)碳纤维的电阻
将碳纤维的各样品投入到筒状容器(直径:9mm、长度:15mm)以使得填充密度达到0.750g/cm3,然后使用低电阻测定装置,由四端子法在施加电压为最大10V的范围内进行电阻的测定。
对于绝缘被覆碳纤维,使用高电阻测定装置,由二端子法对改变施加电压时的电阻进行测定。高电阻测定装置能够测定的范围,如下所示。
[表1]
[表2]
表2中,“E”表示“10的幂”。即,“1E+3”表示“1000”、“1E-1”表示“0.1”。表4-1~表4-3中也同样。
(实施例1)
按照以下的配合进行混合,调制有机硅树脂组合物(导热性树脂组合物)。
-配合-
--配合物1(合计100体积%)--
·碳纤维 7.99体积%
(商品名XN-100-12M:日本石墨纤维(株)制)
·三氧化二铝 37.83体积%
(商品名:DAW03,平均粒径4μm,DENKA(株))
·氮化铝 27.28体积%
(商品名:JC,平均粒径1.2μm,东洋铝业(株))
·有机硅树脂 26.90体积%
需说明的是,有机硅树脂如下所示。
--有机硅树脂--
·有机硅树脂A 55质量%
(商品名:527(A),东丽·道康宁(株))
·有机硅树脂B 45质量%
(商品名:527(B),东丽·道康宁(株))
将所得到的有机硅树脂组合物挤出到内壁贴付了经剥离处理的PET膜的长方体状的模具(42mm×42mm)中,成型为有机硅成型体。将所得到的有机硅成型体在烤箱中在100℃固化6小时,成为有机硅固化物。
将所得到的有机硅固化物在烤箱中在100℃加热1小时后,用超声波裁切机在相对于挤出方向的垂直方向上切断,得到厚度2.05mm的成型体片。超声波裁切机的切片速度为每秒50mm。此外,对于超声波裁切机赋予的超声波振动的振动频率设为20.5kHz,振幅设为60μm。
将所得到的成型体片用经剥离处理的PET膜夹持之后,加入厚度1.98mm的间隔体并进行冲压,由此得到厚度2.00mm的导热片样品。冲压条件设定为50℃、0.5MPa时为3min。在刚刚切片后的表面所看到的填料虽没有被粘合剂所被覆,但通过冲压,填料被压向片,没入到片内,从而粘合剂成分出现在表面,因而被粘合剂所覆盖并反映了片表面的填料形状。在冲压后的与片接触的剥离PET面上可以确认到粘合剂成分。
<评价>
进行如下的评价。结果示于表4-1。
<<碳纤维的取向的有无>>
通过用显微镜(Hi ROX Co Ltd制,KH7700)观察所得的导热片的截面来确认碳纤维是否在导热片的厚度方向上取向。结果示于表4-1。
表4-1中,碳纤维在导热片的厚度方向上取向时,记为“有取向”,碳纤维没有在导热片的厚度方向取向时,记为“无取向”。
<<热特性(有效导热率、热阻、压缩率)>>
热特性的测定使用基于ASTM-D5470的热阻测定装置(迪睿合(株)制)来进行。
需说明的是,有效导热率是厚度方向的导热率。
此外,各特性是施加负荷0.5kgf/cm2而测定的。
<<电特性(体积电阻率、绝缘击穿电压)>>
-体积电阻率-
使用电阻测定器((株)三菱化学Analytech制Hiresta UX),测定改变施加电压时的体积电阻率。
对于电阻值极高、超出测定范围(参照表1)的样品,在表4-1~表4-3中,表示为“超量程(Over Range)”或“O.R.”,对电阻值极低,低于测定范围(参照表1)的样品,在表4-2和表4-3中,表示为“欠量程(Under Range)”或“U.R.”。
需说明的是,体积电阻的测定范围取决于电阻值的测定范围,因此,表1中的测定范围的单位是Ω。
-绝缘击穿电压-
绝缘击穿电压使用超高电压耐压试验器((株)计测技术研究所制,7473)以升压速度0.05kV/秒在室温下测定。将产生绝缘击穿时刻的电压设为绝缘击穿电压(kV/mm)。
(实施例2~7、比较例1~9)
实施例1中,除了将配合物的配合按照表3-1或表3-2以及表4-1~表4-3中记载的进行变更以外,与实施例1同样地操作,制作导热片。
但是,对于比较例7,在实施例3中,在制作成型物时,在内壁贴付了经剥离处理的PET膜的长方体状的模具容器(42mm×42mm)中,在不施加剪切力的情况下投入有机硅树脂组合物,载置贴付了PET膜的盖来进行成型,除此之外与实施例3同样地操作,制作导热片。通过这样操作,得到碳纤维没有在厚度方向上取向的导热片。
对于所得到的导热片,进行与实施例1同样的评价。结果示于表4-1~表4-3。
[表3-1]
[表3-2]
527(A):有机硅树脂,东丽·道康宁(株)
527(B):有机硅树脂,东丽·道康宁(株)
[表4-1]
[表4-2]
[表4-3]
·H1:氮化铝、平均粒径1μm,(株)德山
这里,各成分的比重如下所述。
有机硅树脂:0.97
碳纤维:2.22
三氧化二铝:3.75
氮化铝:3.25
实施例1~7的导热片在具有高导热性的同时,绝缘性也优异。
另一方面,比较例1~3、5的导热片的绝缘性不充分。
比较例4的导热片由于不含有碳纤维,因此其热特性比本发明的导热片差。
比较例6的导热片由于对碳纤维进行了绝缘被覆,因此其热特性比本发明的导热片差。
比较例7的导热片由于碳纤维没有在厚度方向上取向,因此其热特性比本发明的导热片差。
比较例8中,由于导热性填料的含量小于48体积%,因此有机硅树脂组合物(导热性树脂组合物)的粘度过低,未能调制导热片。
比较例9中,由于导热性填料的含量超过70体积%,因此有机硅树脂组合物(导热性树脂组合物)的粘度过高,未能调制导热片。
符号说明
1 导热片
2 散热器
2a 主面
3 电子部件
3a 上表面
5 散热片
6 配线基板
Claims (10)
1.一种导热片,其特征在于,含有粘合剂树脂、碳纤维和所述碳纤维以外的导热性填料,
所述碳纤维与所述粘合剂树脂的质量比,即碳纤维/粘合剂树脂,小于1.30,
所述导热性填料的含量为48体积%~70体积%,
所述碳纤维在所述导热片的厚度方向上取向,
所述导热片的表面由从所述导热片渗出的渗出成分来覆盖,以便追随因突出的所述碳纤维所导致的凸形状,
所述碳纤维的含量为4体积%~12.56体积%。
2.根据权利要求1所述的导热片,负荷0.5kgf/cm2时的压缩率为3%以上。
3.根据权利要求1至2中任一项所述的导热片,所述导热性填料含有氧化铝、氮化铝和氧化锌中的至少任一种。
4.根据权利要求1至2中任一项所述的导热片,所述粘合剂树脂为有机硅树脂。
5.根据权利要求3所述的导热片,所述粘合剂树脂为有机硅树脂。
6.一种导热片的制造方法,所述导热片为权利要求1至5中任一项所述的导热片,其特征在于,所述导热片的制造方法包括:
通过将含有所述粘合剂树脂、所述碳纤维和所述导热性填料的导热性树脂组合物成型为预定形状并固化,得到所述导热性树脂组合物的成型体的工序,以及
将所述成型体切断为片状,得到成型体片的工序,
所述导热片的表面由从所述导热片渗出的渗出成分来覆盖,以便追随因突出的所述碳纤维所导致的凸形状。
7.根据权利要求6所述的导热片的制造方法,得到所述成型体的工序是在中空状的模具中,将所述导热性树脂组合物用挤出机挤出以成型为预定形状,进一步经过固化得到所述碳纤维沿着挤出方向取向的所述成型体的工序,
所述得到成型体片的工序是将所述成型体在相对于所述挤出方向的垂直方向上切断,得到片状的所述成型体片的工序。
8.一种散热构件,其特征在于,具有:
使电子部件所发的热散热的散热器,和
配置于所述散热器并且夹持在所述散热器和所述电子部件之间的权利要求1至5中任一项所述的导热片。
9.一种半导体装置,其特征在于,具备:
电子部件,
使所述电子部件所发的热散热的散热器,和
配置于所述散热器并且夹持在所述散热器和所述电子部件之间的权利要求1至5中任一项所述的导热片。
10.根据权利要求9所述的半导体装置,
具备散热片,并且
在所述散热器和所述散热片之间夹持有权利要求1至5中任一项所述的导热片。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016-012663 | 2016-01-26 | ||
JP2016012663A JP6301978B2 (ja) | 2016-01-26 | 2016-01-26 | 熱伝導シート、熱伝導シートの製造方法、放熱部材及び半導体装置 |
PCT/JP2017/001122 WO2017130755A1 (ja) | 2016-01-26 | 2017-01-13 | 熱伝導シート、熱伝導シートの製造方法、放熱部材及び半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108463882A CN108463882A (zh) | 2018-08-28 |
CN108463882B true CN108463882B (zh) | 2022-05-13 |
Family
ID=59398909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780006145.4A Active CN108463882B (zh) | 2016-01-26 | 2017-01-13 | 导热片、导热片的制造方法、散热构件和半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10526519B2 (zh) |
JP (1) | JP6301978B2 (zh) |
KR (3) | KR102151931B1 (zh) |
CN (1) | CN108463882B (zh) |
WO (1) | WO2017130755A1 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102500420B1 (ko) * | 2017-05-12 | 2023-02-17 | 다우 실리콘즈 코포레이션 | 높은 유전 상수 및 낮은 유전 소산의 중합체 복합체 |
JP6613462B2 (ja) * | 2017-06-27 | 2019-12-04 | 積水ポリマテック株式会社 | 熱伝導性シート |
KR102540533B1 (ko) * | 2018-06-01 | 2023-06-07 | 현대자동차주식회사 | 열전도성이 우수한 경량 고분자 조성물과 그 제조방법 및 이 조성물을 이용하여 제조한 물품 |
JP2020116873A (ja) * | 2019-01-25 | 2020-08-06 | デクセリアルズ株式会社 | 熱伝導性シートの製造方法 |
TW202105643A (zh) * | 2019-07-23 | 2021-02-01 | 德商漢高智慧財產控股公司 | 高熱通量多元件總成之熱管理 |
CN110625877B (zh) * | 2019-09-05 | 2021-06-08 | 上海阿莱德实业股份有限公司 | 一种导热界面材料的制备方法 |
EP4039471A4 (en) * | 2019-09-30 | 2024-01-03 | Sekisui Polymatech Co., Ltd. | HEAT CONDUCTING FILM AND METHOD FOR PRODUCING IT |
KR102280275B1 (ko) | 2019-11-22 | 2021-07-21 | 더원씨엔티(주) | 탄소복합 방열소재 및 그 제조방법 |
KR102384315B1 (ko) | 2019-11-25 | 2022-04-07 | 재단법인 한국탄소산업진흥원 | 열가소성수지 기반 열전도성 마스터배치의 제조방법 및 그를 이용한 방열복합소재 |
JP7458775B2 (ja) * | 2019-12-24 | 2024-04-01 | デクセリアルズ株式会社 | 熱伝導性成形体の製造方法 |
KR20220030259A (ko) * | 2020-05-15 | 2022-03-10 | 데쿠세리아루즈 가부시키가이샤 | 열전도성 시트 및 열전도성 시트의 제조 방법 |
CN114174435B (zh) * | 2020-05-28 | 2023-04-25 | 迪睿合株式会社 | 导热片及其制造方法以及散热结构体和电子设备 |
JP2022064582A (ja) * | 2020-10-14 | 2022-04-26 | 矢崎総業株式会社 | 熱伝導シート、電子機器及び車載装置 |
WO2022168729A1 (ja) * | 2021-02-03 | 2022-08-11 | デクセリアルズ株式会社 | 熱伝導性シート積層体及びこれを用いた電子機器 |
JP6983345B1 (ja) * | 2021-02-18 | 2021-12-17 | デクセリアルズ株式会社 | 熱伝導性シート、および電子機器 |
CN113150558B (zh) | 2021-05-12 | 2021-11-26 | 广东思泉新材料股份有限公司 | 一种定向导热片及其制备方法、及半导体散热装置 |
US11615999B1 (en) | 2022-07-22 | 2023-03-28 | GuangDong Suqun New Material Co., Ltd | Oriented heat conducting sheet and preparation method thereof, and semiconductor heat dissipating device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101275035A (zh) * | 2007-03-27 | 2008-10-01 | 丰田合成株式会社 | 低导电性高散热性高分子材料及成型体 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5660324A (en) | 1979-10-23 | 1981-05-25 | Matsushita Electric Ind Co Ltd | Infrared ray detector |
JPS5671266A (en) | 1979-11-15 | 1981-06-13 | Jeol Ltd | Scanning electron microscope |
JP2992285B1 (ja) * | 1998-11-10 | 1999-12-20 | 北川工業株式会社 | 熱伝導材 |
JP2001315244A (ja) * | 2000-05-01 | 2001-11-13 | Jsr Corp | 熱伝導性シート、その製造方法およびその熱伝導性シートを用いた放熱構造 |
JP2002003717A (ja) | 2000-06-21 | 2002-01-09 | Polymatech Co Ltd | 熱伝導性シート |
JP2002088249A (ja) | 2000-09-12 | 2002-03-27 | Polymatech Co Ltd | 熱伝導性高分子組成物及び熱伝導性成形体 |
US6597575B1 (en) * | 2002-01-04 | 2003-07-22 | Intel Corporation | Electronic packages having good reliability comprising low modulus thermal interface materials |
JP2005054094A (ja) | 2003-08-06 | 2005-03-03 | Bridgestone Corp | 熱伝導性樹脂材料 |
JP4791146B2 (ja) | 2005-11-01 | 2011-10-12 | ポリマテック株式会社 | 熱伝導性部材およびその製造方法 |
JP4897360B2 (ja) * | 2006-06-08 | 2012-03-14 | ポリマテック株式会社 | 熱伝導性成形体及びその製造方法 |
JP5146256B2 (ja) * | 2008-03-18 | 2013-02-20 | 富士通株式会社 | シート状構造体及びその製造方法、並びに電子機器及びその製造方法 |
US8465666B2 (en) | 2009-02-25 | 2013-06-18 | Panasonic Corporation | Thermoconductive composition, heat dissipating plate, heat dissipating substrate and circuit module using thermoconductive composition, and process for production of thermoconductive composition |
JP2012023335A (ja) * | 2010-06-17 | 2012-02-02 | Sony Chemical & Information Device Corp | 熱伝導性シート及びその製造方法 |
TWI610407B (zh) | 2010-06-17 | 2018-01-01 | Dexerials Corp | 導熱片及其製造方法 |
JP5671266B2 (ja) * | 2010-06-17 | 2015-02-18 | デクセリアルズ株式会社 | 熱伝導性シート |
JP5699556B2 (ja) | 2010-11-15 | 2015-04-15 | 日立化成株式会社 | 熱伝導シート、熱伝導シートの製造方法、及び放熱装置 |
JP5760397B2 (ja) * | 2010-11-15 | 2015-08-12 | 日立化成株式会社 | 熱伝導シート、熱伝導シートの製造方法、及び放熱装置 |
JP5660324B2 (ja) | 2011-06-20 | 2015-01-28 | 株式会社豊田中央研究所 | 樹脂組成物およびその製造方法 |
JP5779693B2 (ja) | 2013-06-27 | 2015-09-16 | デクセリアルズ株式会社 | 熱伝導性シート、及びその製造方法、並びに半導体装置 |
JP5752299B2 (ja) * | 2013-07-01 | 2015-07-22 | デクセリアルズ株式会社 | 熱伝導シートの製造方法、熱伝導シート、及び放熱部材 |
JP5766335B2 (ja) | 2013-07-01 | 2015-08-19 | デクセリアルズ株式会社 | 熱伝導シートの製造方法、熱伝導シート、及び放熱部材 |
-
2016
- 2016-01-26 JP JP2016012663A patent/JP6301978B2/ja active Active
-
2017
- 2017-01-13 KR KR1020207016571A patent/KR102151931B1/ko active IP Right Grant
- 2017-01-13 KR KR1020197030256A patent/KR20190120421A/ko not_active IP Right Cessation
- 2017-01-13 WO PCT/JP2017/001122 patent/WO2017130755A1/ja active Application Filing
- 2017-01-13 CN CN201780006145.4A patent/CN108463882B/zh active Active
- 2017-01-13 US US16/072,334 patent/US10526519B2/en active Active
- 2017-01-13 KR KR1020187009825A patent/KR102075893B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101275035A (zh) * | 2007-03-27 | 2008-10-01 | 丰田合成株式会社 | 低导电性高散热性高分子材料及成型体 |
Also Published As
Publication number | Publication date |
---|---|
KR20180050392A (ko) | 2018-05-14 |
US10526519B2 (en) | 2020-01-07 |
KR102151931B1 (ko) | 2020-09-04 |
KR102075893B1 (ko) | 2020-02-11 |
CN108463882A (zh) | 2018-08-28 |
KR20190120421A (ko) | 2019-10-23 |
US20190055443A1 (en) | 2019-02-21 |
WO2017130755A1 (ja) | 2017-08-03 |
JP6301978B2 (ja) | 2018-03-28 |
JP2017135211A (ja) | 2017-08-03 |
KR20200070435A (ko) | 2020-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108463882B (zh) | 导热片、导热片的制造方法、散热构件和半导体装置 | |
CN108463511B (zh) | 导热片、导热片的制造方法、散热构件和半导体装置 | |
CN110945647B (zh) | 导热片 | |
CN107871721B (zh) | 导热性片材及其制备方法、以及半导体装置 | |
CN110739223A (zh) | 导热性片的制造方法 | |
JP6393816B2 (ja) | 熱伝導シート、熱伝導シートの製造方法、放熱部材及び半導体装置 | |
CN109891577B (zh) | 导热片和半导体装置 | |
KR101947333B1 (ko) | 열전도 시트, 열전도 시트의 제조 방법, 방열 부재 및 반도체 장치 | |
CN110739224A (zh) | 导热性片的制造方法 | |
JPWO2020153377A1 (ja) | 熱伝導性樹脂シート | |
CN113348549A (zh) | 导热性片及其制造方法、导热性片的安装方法 | |
JP3568401B2 (ja) | 高熱伝導性シート | |
CN113261398A (zh) | 散热片的制备方法 | |
US20240120254A1 (en) | Thermally-conductive sheet and electronic device | |
WO2017122817A1 (ja) | 熱伝導シート、熱伝導シートの製造方法、放熱部材及び半導体装置 | |
CN116097913A (zh) | 导热性片和导热性片的制造方法 | |
JP6307288B2 (ja) | 熱伝導性部材、及び半導体装置 | |
JP2020196892A (ja) | 熱伝導シート | |
CN116964731A (zh) | 导热性树脂片 | |
WO2022181171A1 (ja) | 熱伝導シート及び熱伝導シートの製造方法 | |
WO2017130740A1 (ja) | 熱伝導シート、熱伝導シートの製造方法、放熱部材及び半導体装置 | |
WO2022176822A1 (ja) | 放熱部材の製造方法 | |
JP2022129325A (ja) | 熱伝導シート及び熱伝導シートの製造方法 | |
JP2022064582A (ja) | 熱伝導シート、電子機器及び車載装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |