CN108281413A - 制作电容器的方法 - Google Patents
制作电容器的方法 Download PDFInfo
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- CN108281413A CN108281413A CN201710011359.2A CN201710011359A CN108281413A CN 108281413 A CN108281413 A CN 108281413A CN 201710011359 A CN201710011359 A CN 201710011359A CN 108281413 A CN108281413 A CN 108281413A
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000003990 capacitor Substances 0.000 title claims abstract description 28
- 239000010410 layer Substances 0.000 claims abstract description 122
- 238000005530 etching Methods 0.000 claims abstract description 72
- 239000012044 organic layer Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000003628 erosive effect Effects 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 230000001154 acute effect Effects 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
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Abstract
本发明公开一种制作电容器的方法,包括提供基板与设置于基板上的第一蚀刻停止层;在第一蚀刻停止层上形成多条第一间隙壁;在第一间隙壁上依序形成有机层以及第二蚀刻停止层,其中有机层覆盖第一间隙壁;在第二蚀刻停止层上形成多条第二间隙壁,其中各第二间隙壁横跨第一间隙壁;将第二间隙壁的图案转移至有机层,以形成有机图案;以有机图案与第一间隙壁为掩模进行蚀刻制作工艺,以形成蚀刻停止图案并移除第二蚀刻停止层;将蚀刻停止图案转移至基板,以形成多个穿孔。
Description
技术领域
本发明涉及一种制作电容器的方法,特别是涉及一种制作动态随机存取存储器(DRAM)的电容器的方法。
背景技术
随着科技日新月异,动态随机存取存储器(DRAM)的尺寸越来越小,为了在日渐缩小的芯片面积下容纳更多的电容器并保持一定的电容值,目前的做法是将电容器制作得又高又细且设计为阵列排列的方式。为此,需在牺牲层中制作出具有高深宽比(aspectratio)且阵列排列的穿孔,然后在此高深宽比的穿孔内形成下电极,并于下电极上形成电容介电材料与上电极。然而,目前制作具有高深宽比穿孔的步骤仍相当复杂,因此简化电容器的制作方法实为本技术领域不断努力的目标。
发明内容
本发明的目的在于提供一种制作电容器的方法,以简化电容器的制作方法。
本发明的一实施例提供一种制作电容器的方法,包括以下步骤:提供基板以及第一蚀刻停止层,其中第一蚀刻停止层设置于基板上;在第一蚀刻停止层上形成多条第一间隙壁;在第一间隙壁上依序形成第一有机层以及第二蚀刻停止层,其中第一有机层覆盖第一间隙壁;在第二蚀刻停止层上形成多条第二间隙壁,其中各第二间隙壁横跨第一间隙壁;将第二间隙壁的图案转移至第一有机层,以形成有机图案;以有机图案与第一间隙壁为掩模进行一第一蚀刻制作工艺,以蚀刻第一蚀刻停止层并移除第二蚀刻停止层,进而形成一第一蚀刻停止图案;以及将第一蚀刻停止图案转移至基板,以形成多个穿孔,其中穿孔彼此分隔开。
本发明的方法通过于蚀刻停止层上形成三层结构的方式形成沿着两个不同方向延伸的间隙壁,且通过先进图案APP与蚀刻停止层ES1具有高蚀刻选择比的能力,将间隙壁的图案有效地转移至具有相对高厚度的牺牲层中,如此不仅可精确形成具有高深宽比的穿孔,还可简化制作穿孔的步骤。
附图说明
图1至图14为本发明一实施例的制作电容器的方法示意图;
图15为本发明另一实施例的间隙壁之间具有锐角夹角的俯视示意图;
图16为本发明另一实施例的穿孔的排列示意图。
主要元件符号说明
Sub 基板 ES1、ES2 蚀刻停止层
SC 存储节点接触 AP 先进图案膜
SA 牺牲层 PT 图案转移层
HM 硬掩模层 SP1、SP2、 间隙壁
SP1’、SP2’
D1 第一方向 TR1、TR2 三层结构
OL1、OL2、OL3 有机层 SH1、SH2 含硅层
PR1、PR2 光致抗蚀剂图案 SHP 含硅图案
P 条状掩模图案 D2 第二方向
D2’ 延伸方向 OLP 有机图案
PS2 第二蚀刻停止图案 PS1 第一蚀刻停止图案
APP 先进图案 HMP 硬掩模图案
TP 转移图案 TH 穿孔
BE 下电极 CD 电容介电层
TE 上电极 C 电容器
HP 六角形图案
具体实施方式
请参考图1至图14,其为本发明一实施例的制作电容器的方法示意图。首先,如图1所示,提供基板Sub以及蚀刻停止层ES1,其中蚀刻停止层ES1设置于基板Sub上。在本实施例中,基板Sub可为含有晶体管、字符线、位线(图未示)与存储节点接触SC的基板,以通过本实施例的方法于基板Sub中形成穿孔,进而于各存储节点接触SC上形成电容器。本技术领域技术人员应知晶体管、字符线、位线与存储节点接触SC的结构与其间的配置关系以及相关的变化设计,因此在此不再赘述。在本实施例中,可选择性另提供先进图案膜AP,位于基板Sub与蚀刻停止层ES1之间,其中先进图案膜AP包括非晶碳,由此可相对于蚀刻停止层ES1与基板Sub而言具有高的蚀刻选择比。
在本实施例中,基板Sub还可包括牺牲层SA、图案转移层PT与硬掩模层HM,依序堆叠于存储节点接触SC上。牺牲层SA用以形成具有高深宽比的穿孔,因此其厚度大于图案转移层PT的厚度与硬掩模层HM的厚度。并且,牺牲层SA可为多层结构,举例而言,多层结构可包括氮化硅、氧化层、氮碳化硅(SiCN)、氧化层以及碳氮化硅的堆叠,其中碳氮化硅可作为支撑层,氮化硅可作为蚀刻停止层,但不以此为限。图案转移层PT用以将硬掩模层HM的图案转移至牺牲层SA中,因此可包括与硬掩模层HM以及牺牲层SA不同的材料,例如图案转移层PT包括非晶硅,硬掩模层HM包括氧化硅。
在提供基板Sub与蚀刻停止层ES1之后,在蚀刻停止层ES1上形成多条间隙壁SP1,其中各间隙壁SP1分别沿着第一方向D1延伸设置。具体而言,如图1所示,在蚀刻停止层ES1上形成三层结构TR1。在本实施例中,三层结构TR1可包括有机层OL1、含硅层SH1以及光致抗蚀剂图案PR1,依序设置于蚀刻停止层ES1上。含硅层SH1可例如为含硅硬掩模底抗反射(silicon-containing hard mask bottom anti-reflective coating,SHB)层,可用以减少光致抗蚀剂层与基板Sub之间的反射光。光致抗蚀剂图案PR1可通过光刻制作工艺图案化光致抗蚀剂层而形成。接着,如图2所示,以光致抗蚀剂图案PR1为掩模进行对含硅层SH1的蚀刻制作工艺,将光致抗蚀剂图案PR1转移至含硅层SH1,以形成含硅图案SHP。随后,以含硅图案SHP为掩模进行对有机层OL1的蚀刻制作工艺,将含硅图案SHP转移至有机层OL1,以于蚀刻停止层ES1上形成多条沿着第一方向D1延伸的条状掩模图案P,并移除光致抗蚀剂图案PR1。其中,光致抗蚀剂图案PR1可在蚀刻有机层OL1之前移除或与有机层OL1同时移除。由于含硅层SH1相对于光致抗蚀剂层与有机层OL1具有高蚀刻选择比,因此可作为蚀刻厚度较厚的有机层OL1的掩模,以在较薄的厚度下精确地将图案转移至有机层OL1,由此光致抗蚀剂层不须为了具有掩模功能而提高厚度。例如含硅层SH1的厚度可小于光致抗蚀剂层的厚度,且光致抗蚀剂层的厚度小于与有机层OL1的厚度。为清楚显示后续步骤,图2至图8省略图案转移层PT以下的膜层,且图9与图10省略牺牲层SA以下的膜层,但本发明不以此为限。
如图3所示,在条状掩模图案P与蚀刻停止层ES1上均匀形成间隙壁材料,例如氧化硅。然后,进行回蚀刻制作工艺,以于条状掩模图案P的侧壁上分别形成间隙壁SP1,并暴露出蚀刻停止层ES1。接着,移除条状掩模图案P,以留下宽度小于曝光极限的间隙壁SP1,由此可用以定义穿孔于第二方向D2上的间距。
图4为在间隙壁SP1上形成光致抗蚀剂图案PR的俯视示意图,图5为沿着图4的剖线A-A’、B-B’与C-C’的剖面示意图,且图6与图8到图14绘示对应图4剖线A-A’、B-B’与C-C’的不同步骤。如图4与图5所示,在间隙壁SP1上依序形成另一有机层OL2以及另一蚀刻停止层ES2,其中有机层OL2填满间隙壁SP1之间的间隙,并覆盖间隙壁SP1。由于有机层OL2具有良好的填洞能力,因此可填满间隙壁SP1之间的间隙,以避免空洞产生,影响后续制作工艺品质,且可使其上表面为一平坦表面,以助于后续进行形成间隙壁SP2的步骤。
然后,在蚀刻停止层ES2上形成多条间隙壁SP2,其中间隙壁SP2沿着第二方向D2延伸设置,并横跨间隙壁SP1。在本实施例中,形成间隙壁SP2的步骤可与形成间隙壁SP1的步骤相同。具体而言,可于蚀刻停止层ES2上形成另一三层结构TR2,其与三层结构TR1相同,并可包括另一有机层OL3、另一含硅层SH2以及另一光致抗蚀剂图案PR2,依序设置于蚀刻停止层ES2上。光致抗蚀剂图案PR2可通过另一光刻制作工艺图案化另一光致抗蚀剂层而形成。随后,如图6所示,以光致抗蚀剂图案PR2为掩模进行对含硅层SH2的蚀刻制作工艺,将光致抗蚀剂图案PR2转移至含硅层SH2,以形成含硅图案。将含硅图案转移至有机层OL3,以于蚀刻停止层ES2上形成沿着第二方向D2延伸设置的条状掩模图案,并移除光致抗蚀剂图案PR2。接下来,在条状掩模图案与蚀刻停止层ES2上均匀形成间隙壁材料,例如氧化硅,并接着进行回蚀刻制作工艺,以于条状掩模图案的侧壁上分别形成第二间隙壁SP2,且暴露出蚀刻停止层ES2。随后,移除条状掩模图案,以留下宽度小于曝光极限的第二间隙壁SP2,由此可用以定义穿孔于第一方向D1上的间距。通过各间隙壁SP2横跨间隙壁SP1,各穿孔的大小可分别由任两相邻的间隙壁SP1与任两相邻的间隙壁SP2所定义出。如图7所示,本实施例的间隙壁SP1与间隙壁SP2彼此垂直交错,使得所定义出的穿孔为矩形,但本发明不限于此。
在另一实施例中,如图15所示,间隙壁SP1’可不与间隙壁SP2’垂直。举例而言,间隙壁SP2’的延伸方向D2’可与第二方向D2之间具有一锐角夹角。如图16所示,穿孔TH可排列成多个六角形图案HP。
在形成间隙壁SP2之后,将间隙壁SP2的图案转移至有机层OL2。具体而言,如图8所示,以间隙壁SP2作为掩模进行蚀刻制作工艺,以蚀刻蚀刻停止层ES2,进而形成第二蚀刻停止图案PS2。接着,移除间隙壁SP2。然后,如图9所示,以第二蚀刻停止图案PS2作为掩模进行蚀刻制作工艺,以蚀刻有机层OL2,进而形成有机图案OLP。随后,以有机图案OLP与间隙壁SP1为掩模进行蚀刻制作工艺,以蚀刻蚀刻停止层ES1,进而形成第一蚀刻停止图案PS1。由于蚀刻停止层ES1与ES2可包括相同材料,例如氮化硅,因此在形成第一蚀刻停止图案PS1时会同时移除第二蚀刻停止图案PS2。并且,各间隙壁SP2的一部分也会在此蚀刻制作工艺中被移除。
如图10所示,以第一蚀刻停止图案PS1作为掩模进行蚀刻制作工艺,以蚀刻先进图案膜AP,进而形成先进图案APP并移除有机图案OLP。随后,如图11所示,以先进图案APP作为掩模进行蚀刻制作工艺,以蚀刻硬掩模层HM,进而形成硬掩模图案HMP。由于硬掩模层HM具有一定的深度,例如2400埃,因此在蚀刻硬掩模层HM时间隙壁SP1与第一蚀刻停止图案SP1也会被移除。通过相对于蚀刻停止层ES1与基板Sub具有高蚀刻选择比的先进图案APP,厚度大于先进图案膜AP的硬掩模层HM可被蚀穿。
接着,如图12所示,移除先进图案APP。以硬掩模图案HMP作为掩模进行蚀刻制作工艺,以蚀刻图案转移层PT,进而形成转移图案TP。随后,以转移图案TP进行蚀刻制作工艺,以于牺牲层SA中形成彼此分隔开的多个穿孔TH,分别暴露出对应的一存储节点接触SC,并移除硬掩模图案HMP。
如图13所示,在各穿孔TH中分别形成下电极BE。然后,进行蚀刻制作工艺,以移除牺牲层SA。在另一实施例中,蚀刻制作工艺可仅移除牺牲层SA中的氧化硅,而留下支撑的碳氮化硅,以支撑住下电极BE,避免倒塌。接着,如图14所示,在下电极BE上均匀形成电容介电层CD。随后,在电容介电层CD上形成上电极TE,如此以形成电容器C。
综上所述,本发明的方法通过于蚀刻停止层上形成三层结构的方式形成沿着两个不同方向延伸的间隙壁,且通过先进图案APP与蚀刻停止层ES1具有高蚀刻选择比的能力,将间隙壁的图案有效地转移至具有相对高厚度的牺牲层中,如此不仅可精确形成具有高深宽比的穿孔,还可简化制作穿孔的步骤。
以上所述仅为本发明的较佳实施例,凡依本发明权利要求所做的均等变化与修饰,皆应属本发明的涵盖范围。
Claims (13)
1.一种制作电容器的方法,其特征在于,包括以下步骤:
提供一基板以及一第一蚀刻停止层,其中该第一蚀刻停止层设置于该基板上;
在该第一蚀刻停止层上形成多条第一间隙壁;
在该多个第一间隙壁上依序形成一第一有机层以及一第二蚀刻停止层,其中该第一有机层覆盖该多个第一间隙壁;
在该第二蚀刻停止层上形成多条第二间隙壁,其中各该第二间隙壁横跨该多个第一间隙壁;
将该多个第二间隙壁的图案转移至该第一有机层,以形成一有机图案;
以该有机图案与该多个第一间隙壁为掩模进行一第一蚀刻制作工艺,以蚀刻该第一蚀刻停止层并移除该第二蚀刻停止层,进而形成一第一蚀刻停止图案;以及
将该第一蚀刻停止图案转移至该基板,以形成多个穿孔,其中该多个穿孔彼此分隔开。
2.如权利要求1所述的制作电容器的方法,其特征在于,还包括提供一先进图案膜,位于该基板与该第一蚀刻停止层之间,其中该先进图案膜包括非晶碳。
3.如权利要求2所述的制作电容器的方法,其特征在于,该基板包括硬掩模层,且将该第一蚀刻停止图案转移至该基板的步骤包括:
以该第一蚀刻停止图案作为掩模进行一第二蚀刻制作工艺,以蚀刻该先进图案膜,进而形成一先进图案并移除该有机图案;以及
以该先进图案作为掩模进行一第三蚀刻制作工艺,以蚀刻该硬掩模层,进而形成一硬掩模图案,并移除该多个第一间隙壁与该第一蚀刻停止图案。
4.如权利要求3所述的制作电容器的方法,其特征在于,该基板另包括图案转移层以及牺牲层,且将该第一蚀刻停止图案转移至该基板的步骤另包括:
移除该先进图案;
以该硬掩模图案作为掩模进行一第四蚀刻制作工艺,以蚀刻该图案转移层,进而形成一转移图案;以及
以该转移图案进行一第五蚀刻制作工艺,以于该牺牲层中形成该多个穿孔并移除该硬掩模图案。
5.如权利要求4所述的制作电容器的方法,其特征在于,还包括:
移除该转移图案;
在各该穿孔中分别形成一下电极;
移除该牺牲层;
在该下电极上均匀形成一电容介电层;以及
在该电容介电层上形成一上电极。
6.如权利要求1所述的制作电容器的方法,其特征在于,形成该多个第一间隙壁包括:
在该第一蚀刻停止层上形成一三层结构,其中该三层结构包括第二有机层、含硅层以及光致抗蚀剂图案,依序设置于该第一蚀刻停止层上;
将该光致抗蚀剂图案转移至该含硅层,以形成一含硅图案;
将该含硅图案转移至该第二有机层,以形成多条条状掩模图案,并移除该光致抗蚀剂图案;
在该多个条状掩模图案与该第一蚀刻停止层上均匀形成一间隙壁材料;
进行一回蚀刻制作工艺,以于该多个条状掩模图案的侧壁上分别形成该多个第一间隙壁,并暴露出该第一蚀刻停止层;以及
移除该多个条状掩模图案。
7.如权利要求6所述的制作电容器的方法,其特征在于,形成该多个第二间隙壁的步骤与形成该第一间隙壁的步骤相同。
8.如权利要求1所述的制作电容器的方法,其特征在于,各该第一间隙壁与各该第二间隙壁的夹角为90度。
9.如权利要求1所述的制作电容器的方法,其特征在于,各该第一间隙壁与各该第二间隙壁的夹角为锐角。
10.如权利要求9所述的制作电容器的方法,其特征在于,该多个穿孔排列成多个六角形图案。
11.如权利要求1所述的制作电容器的方法,其特征在于,将该多个第二间隙壁的图案转移至该第一有机层包括:
以该多个第二间隙壁作为掩模进行一第六蚀刻制作工艺,以蚀刻该第二蚀刻停止层,进而形成一第二蚀刻停止图案;
移除该多个第二间隙壁;
以该第二蚀刻停止图案作为掩模进行一第七蚀刻制作工艺,以蚀刻该第一有机层,进而形成该有机图案。
12.如权利要求1所述的制作电容器的方法,其特征在于,该第一蚀刻停止层与该第二蚀刻停止层包括氮化硅。
13.如权利要求1所述的制作电容器的方法,其特征在于,各该第一间隙壁与各该第二间隙壁分别包括氧化硅。
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