CN108155113B - 基底加工设备及加工基底的方法 - Google Patents

基底加工设备及加工基底的方法 Download PDF

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CN108155113B
CN108155113B CN201710984157.6A CN201710984157A CN108155113B CN 108155113 B CN108155113 B CN 108155113B CN 201710984157 A CN201710984157 A CN 201710984157A CN 108155113 B CN108155113 B CN 108155113B
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荒井宏贵
森幸博
野中裕弥
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Abstract

一种基底加工设备，包括：设置在腔室中的台架；喷洒头，在所述喷洒头中形成有多个狭缝，并且所述喷洒头与所述台架相对；第一气体供给部，其经由所述多个狭缝将第一气体供给至所述台架与所述喷洒头之间的空间；以及第二气体供给部，其将作为非惰性气体的第二气体供给至所述台架下方的区域，其中，在所述第一气体为由多种气体组成的混合气体的情况下，所述第二气体为与组成所述第一气体的多种气体中的一种相同的气体，并且在所述第一气体为单一种类气体的情况下，所述第二气体为与所述第一气体相同的气体。

Description

基底加工设备及加工基底的方法
技术领域
本发明涉及一种用于加工诸如半导体薄片的基底的基底加工设备，并且涉及一种通过使用所述基底加工设备来加工基底的方法。
背景技术
US9,123,510B2公开了一种基底加工设备，其中加工气体经由气体扩散板中的开口被供给至加工空间。
在一些情况下，支撑在台架上的基底通过从台架上方供给清洁的气体或形成气体的薄膜而被加工。例如，在这样的情况下，使诸如氦气或氩气的惰性气体流过台架下方的区域，使得从台架上方供给的气体不以迂回的方式流过台架下方。流过台架下方的区域的气体在一些情况下被称作“密封气体”。当从台架上方供给的气体的量增加时，需要也增加密封气体的流速。
如果增加密封气体的流速，则在台架下方的区域中发生放电。在所形成的薄膜的轮廓通过调节密封气体的流速而被控制的情况下，也会出现在台架下方的区域中发生放电的问题。在执行等离子CVD的一些情况下，增加射频(RF)功率从而增加通过基底加工设备形成薄膜的速度。如果RF功率增加，用于台架下方的区域中的放电的裕量变得更小，放电能够更容易地发生。在这些情况下，存在对能够抑制台架下方的区域中的放电的基底加工设备和方法的需要。
发明内容
由于上述问题，本发明的目的在于提供一种能够抑制台架下方的区域中的放电的基底加工设备和方法。
本发明的特征和优点可以总结如下。
根据本发明的一个方案，基底加工设备包括：腔室；台架，其设置在所述腔室中；喷洒头，所述喷洒头中形成多个狭缝，并且所述喷洒头与所述台架相对；第一气体供给部，其经由所述多个狭缝将第一气体供给至所述台架与所述喷洒头之间的空间；以及第二气体供给部，其将作为非惰性气体的第二气体供给至所述台架下方的区域，其中，在所述第一气体为由多种气体组成的混合气体的情况下，所述第二气体为与组成所述第一气体的多种气体中的一种相同的气体，并且在所述第一气体为单一种类气体的情况下，所述第二气体为与所述第一气体相同的气体。
根据本发明的另一个方案，加工基底的方法包括如下的在腔室中对台架上的基底执行等离子加工的加工过程：通过经由喷洒头中的多个狭缝将第一气体供给至所述喷洒头与所述台架之间的空间，通过同时将作为非惰性气体的第二气体供给至所述台架下方的区域，并且通过在供给所述第一气体和所述第二气体的同时将射频功率施加至所述喷洒头，其中，在所述第一气体为由多种气体组成的混合气体的情况下，所述第二气体为与组成所述第一气体的多种气体中的一种相同的气体，并且在所述第一气体为单一种类气体的情况下，所述第二气体为与所述第一气体相同的气体。
本发明的其他和进一步的目的、特征以及优点将更加全面地下面的描述中显现。
附图说明
图1为基底加工设备的截面图；
图2为示出了加工基底时的气体流动的示意图；
图3为第二气体与放电的发生/不发生之间的关系的表格；
图4为示出了薄膜的轮廓的示意图；并且
图5为示出了第一气体的流速与薄膜厚度均匀性的图表。
具体实施方式
将参照附图描述根据本发明的实施例的基底加工设备和基底加工方法。彼此相同或相对应的部件分配有相同的附图标记，并且在一些情况下避免对它们的重复描述。
实施例
图1为根据本发明的实施例的基底加工设备的截面图。基底加工设备具有腔室(反应室)12。台架16设置在腔室12中。台架16例如为合并有加热器的基座。台架16支撑在滑动轴18上并且接地。喷洒头14设置在台架16上方并与台架16相对。多个狭缝14a形成在喷洒头14中。在喷洒头14中，设置有连通多个狭缝14a的扩散空间14b。台架16和喷洒头14形成面平行结构。
气体排放部24设置在腔室12的侧表面上。气体排放部24为了排放气体(包括用于形成薄膜的材料气体的)的目的而设置。真空泵因此连接至气体排放部24。
台架16被具有如在平面图中观察到的包围台架16的形状的排放管道30包围。排放管道30例如由陶瓷形成。适当压缩的O形环32设置在排放管道30和喷洒头14之间。适当压缩的O形环34设置在排放管道30与腔室12之间。排放管道30具有两个作用：第一个作用为将施加有电功率的喷洒头14与处于GND电位的腔室12彼此电分离，并且第二个作用为通向气体供给至腔室12的气体排放部24。
运输管40通过绝缘部20连接至喷洒头14，所述绝缘部20介于运输管40与喷洒头14之间。运输管40为沿着z方向(即竖直方向)延伸的管。在运输管40中，设置有大致竖直地延伸且连通狭缝14a上方的扩散空间14b的通道。
远程等离子单元42设置在运输管40的上端上。气源44和46连接至远程等离子单元42，待用于清洁腔室12以及其他部件的清洁气体从所述气源44和46供给。从气源44和46供给至远程等离子单元42的气体被远程等离子单元42转换为等离子状态，从而产生活性离子。该活性离子用于腔室12和其他部件的清洁。
气体供给管线50大致垂直于运输管40地连接至运输管40的侧表面。在气体供给管线50中，设置有连通运输管40中空间48的通道51。质量流控制器52(在下文中称为MFC)连接至气体供给管线50，并且气源54和56连接至MFC52。气源54和56供给待用于形成薄膜的材料气体。例如，气源54和56供给氧气和正硅酸乙酯(TEOS)气体。来自气源54和56的气体被供给到气体供给管线50中的通道51中，同时由MFC52进行压力控制，并且在通道51中大致水平地移动以达到运输管40中的空间48。
远程等离子单元(RPU)闸门阀62连接至运输管40的侧表面。RPU闸门阀62为了通过切断远程等离子单元42与腔室12之间的连通而防止清洁气体与材料气体的混合的目的而设置。
气体供给管70连接至腔室12的底部12A。MFC72连接至气体供给管70。气源74连接至MFC72。气源74例如供给氧气。来自气源74的气体经由气体供给管70被供给至台架16下方的区域，同时由MFC72进行压力控制。多个气体供给管70可以设置在腔室12的底部12A中，或者一个气体供给管70可以恰好设置在滑动轴18侧的旁边。
经由多个狭缝14a供给至台架16与喷洒头14之间的空间的气体将被称作第一气体。供给第一气体的第一气体供给部在本实施例中为MFC52。经由气体供给管70供给至台架16下方的区域的气体将被称作第二气体。供给第二气体的第二气体供给部在本实施例中为MFC72。
随后将描述根据本发明的实施例的通过使用基底加工设备来加工基底的方法。图2为示出加工基底时的气体的流动的示意图。首先，在根据本发明的实施例的基底加工方法中，基底80放置在台架16上。基底80例如为硅薄片。基底可以为硅薄片以外的待加工的物体。下面，实施在基底80上执行等离子加工的加工过程。在加工过程中，第一气体经由狭缝14a被从MFC52供给至喷洒头14与台架16之间的空间，而第二气体经由气体供给管70同时被从MFC72供给至台架16下方的区域。在该情况下，射频波(RF功率)被施加至喷洒头14。因此在基底80上执行等离子加工。
在图2中，由箭头指示第一气体的流动。用于在基底80上进行加工的第一气体沿径向且水平地在基底80上移动并且进入排气管道30。图2中的虚线箭头指示第二气体的流动。第二气体通过在台架16和排气管道30之间流动而从台架16下方进入排气管道30。第一气体和第二气体之后经由排气管道30被排出腔室12。
在本发明的实施例中，由氧气和TEOS组成的混合气体在MFC52中产生并且作为第一气体被供给到基底80上。而且，由MFC72进行压力控制的氧气作为第二气体被供给至台架16下方的区域。因此，第一气体为由两种气体组成的混合气体，而作为组成混合气体的一种气体的氧气被用作第二气体。从防止第一气体以迂回的方式在台架16下方流动的观点，优选将第一气体和第二气体的比例设定为10:1至50:1。
要求第二气体用作用于抑制第一气体以迂回的方式在台架16下方流动的密封气体，并且抑制台架16下方的区域中的放电。
图3为第二气体与放电的发生/不发生的关系的表格。比较了在氩气、氦气以及氧气分别在上述基底加工设备中用作第二气体的情况下的放电程度。在该试验中，氧气和TEOS分别以27.0[slpm(标准升每分钟)]和33[g/min(克/分钟)]的流速被提供为第一气体。喷洒头14与台架16之间的间隙被设定为8.4mm。第二气体的流速从0.20变化至7.00[slpm]。在该情况下，当通过向喷洒头14施加HRF1600W和LRF840W而在台架16和喷洒头14之间产生等离子时，进行台架16下方区域中的放电的发生/不发生的检查。
当使氩气作为第二气体以3.00[slpm]或更高的速度流动时，在台架16下方的区域中发生放电。当使氦气作为第二气体以5.00[slpm]或更高的速度流动时，在台架16下方的区域中发生放电。在本发明的实施例中，氧气被用作第二气体，因此，即使流速增加至7.00[slpm]也没有发生放电。因此，在根据本发明的实施例的基底加工方法中，能够抑制在台架16下方的区域中的放电，同时增加第二气体的流速以防止第一气体以迂回的方式在台架16下方流动。台架16下方的区域中的放电的抑制能够避免等离子的损失并且只在台架16与喷洒头14之间产生等离子。
图4为示出通过根据本发明的实施例的基底加工方法形成的薄膜的轮廓的示意图。通过将作为第二气体供给的氧气的流速从0.2改变至6[slpm]同时将包括氧气和TEOS的第一气体的流速分别固定在27.0[slpm]和33[g/min]而获得薄膜轮廓。喷洒头14与台架16之间的间隙设定为8.4mm。通过施加HRF1600W和LRF840W而在台架16与喷洒头14之间产生等离子。当第二气体的流速低至0.2至1.5[slpm]时，薄膜轮廓趋于凹陷。即，薄膜厚度在基底的环形部分比在基底的由环形部分包围的中央部分大。当第二气体的流速像3至6[slpm]一样大时，薄膜轮廓趋于凸起。即，薄膜厚度在基底的环形部分比在基底的由环形部分包围的中央部分小。认为当第二气体的流速增加时，在基底的中央部分正上方的流速减小并且在中央部分以中央部分加工形成薄膜。
因此，根据本发明的实施例的基底加工方法能够通过改变第二气体的流速而控制薄膜轮廓同时抑制台架16下方的区域中的放电。
图5为示出了第一气体的流速和薄膜厚度均匀性的图表。通过改变用作第一气体的氧气的流速同时固定用作第二气体的氧气的流速而获得图5中示出的数据。图5的纵坐标上的“均匀性”代表基底表面中的薄膜厚度均匀性。如果多个测量点处的薄膜厚度的最大值为“max”；多个测量点处的薄膜厚度的最小值为“min”；并且多个测量点处的薄膜厚度的平均值为“ave”，那么均匀性被定义为((max-min)/ave)×50。因此优选的是，均匀性为小的数值。从图5能够理解的是，当第一气体的流速改变时均匀性改变。均匀性因此能够通过选择优化流速作为第一气体的流速而控制。从图5能够理解的是，通过选择20[slpm]作为第一气体的流速能够获得均匀性的最小数值。
从图4和图5能够理解的是，对形成在基底上的薄膜的轮廓控制能够通过调节第一和第二气体的流速来执行。在加工过程中，因此，薄膜成形能够以如下的方式执行：薄膜厚度在基底80的中央部分处比在基底80的包围中央部分的环形部分大，或者中央部分的薄膜厚度比环形部分的薄膜厚度小。不言而喻，通过改变第一和第二气体的流速能够获得期望的轮廓。
能够对根据本发明的实施例的基底加工设备和基底加工方法进行各种改变。例如，可以将氧气以外的气体用作第二气体。在第一气体为由多种气体组成的混合气体的情况下，与组成混合气体的一种气体相同的气体被用作第二气体。在第一气体为单种气体的情况下，与第一气体相同的气体被用作第二气体。以这种方式能够避免第二气体对加工的影响。
认为如果第二气体为容易分解的气体，那么在台架16下方的区域中发生放电。因此存在将惰性气体以外的气体选做第二气体的需要。认为通过例如将具有高电负度的气体或诸如具有三键的氮气的气体选做第二气体，能够抑制台架16下方的区域中的放电。例如，在氮气包含在第一气体中的情况下通过使用氮气作为第二气体，在TEOS包含在第一气体中的情况下通过使用TEOS作为第二气体，或者在硅烷包含在第一气体中的情况下通过使用硅烷作为第二气体，能够抑制台架16下方的区域中的放电。与惰性气体相比，其他一些不易分解的气体可以作为第二种气体。
由根据本发明的实施例的基底加工方法形成的1μm厚的薄膜的轮廓与由相同的基底加工方法形成的5μm厚的薄膜的轮廓彼此不同。为了不管薄膜厚度如何而获得期望的薄膜轮廓，第二气体的流速和/或第一气体的流速可以相对于加工过程的时间而改变。在这样的情况下，流速能够相对于时间改变而不相对于薄膜质量的改变而改变。由于薄膜轮廓能够通过如上所述地改变第一和第二气体的流速而被控制，所以具有第一薄膜厚度的薄膜轮廓和具有比第一薄膜厚度大的第二薄膜厚度的薄膜轮廓能够通过相对于时间改变第二气体的流速或通过相对于时间改变第一气体的流速而基本上彼此相同地制成。
加工过程中的加工不限于薄膜成形。在加工过程中，能够执行任何使用等离子的加工。例如，基底表面可以在加工过程中改变。
根据本发明，相比于惰性气体不能容易地发生放电的气体被供给至台架下方的区域，由此抑制了台架下方区域中的放电。
显然按照以上教导本发明的许多改变和变型是可能的。因此理解的是，在所附的权利要求书的范围内本发明可以不同于所具体描述地实践。

Claims (11)

1.一种基底加工设备，包括：
腔室；
台架，其设置在所述腔室中；
喷洒头，在所述喷洒头中形成有多个狭缝，并且所述喷洒头与所述台架相对；
第一气体供给部，其经由所述多个狭缝将第一气体供给至所述台架与所述喷洒头之间的空间；以及
第二气体供给部，其将作为非惰性气体的第二气体供给至所述台架下方的区域，
其中，所述第一气体包括用于形成薄膜的材料气体，在所述第一气体为由多种气体组成的混合气体的情况下，所述第二气体为与组成所述第一气体的多种气体中的一种相同的气体，并且在所述第一气体为单一种类气体的情况下，所述第二气体为与所述第一气体相同的气体。
2.根据权利要求1所述的基底加工设备，其中，所述第二气体为氧气、氮气、正硅酸乙酯或硅烷。
3.根据权利要求1所述的基底加工设备，其中，所述第一气体为由氧气和正硅酸乙酯组成的混合气体，而所述第二气体为氧气。
4.根据权利要求1-3中任一项所述的基底加工设备，进一步包括排气管道，所述排气管道具有依照在平面中观察到的包围所述台架的形状，并且经由所述排气管道所述第一气体和所述第二气体被排出所述腔室。
5.一种加工基底的方法，包括如下的在腔室中对台架上的基底执行等离子加工的加工过程：通过经由喷洒头中的多个狭缝将第一气体供给至所述喷洒头与所述台架之间的空间，通过同时将作为非惰性气体的第二气体供给至所述台架下方的区域，并且通过在供给所述第一气体和所述第二气体的同时将射频功率施加至所述喷洒头，
其中，所述第一气体包括用于形成薄膜的材料气体，在所述第一气体为由多种气体组成的混合气体的情况下，所述第二气体为与组成所述第一气体的多种气体中的一种相同的气体，并且在所述第一气体为单一种类气体的情况下，所述第二气体为与所述第一气体相同的气体。
6.根据权利要求5所述的方法，其中，所述第二气体为氧气、氮气、正硅酸乙酯或硅烷。
7.根据权利要求5所述的方法，其中，所述第一气体为由氧气和正硅酸乙酯组成的混合气体，而所述第二气体为氧气。
8.根据权利要求5-7中任一项所述的方法，其中，所述第一气体和所述第二气体经由排气管道被排出所述腔室，所述排气管道具有依照在平面中观察到的包围所述台架的形状，并且
其中，所述第一气体和所述第二气体的比例为10:1至50:1。
9.根据权利要求5-7中任一项所述的方法，其中，相对于加工过程中的时间改变所述第二气体的流速。
10.根据权利要求5-7中任一项所述的方法，其中，相对于加工过程中的时间改变所述第一气体的流速。
11.根据权利要求5-7中任一项所述的方法，其中，薄膜成形以加工过程中以如下的方式执行：薄膜厚度在基底的中央部分比在基底的包围所述中央部的环形部分大，或者以如下的方式执行：薄膜厚度在所述中央部分比在所述环形部分小。
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