CN108141214B - 高效率半交叉耦合去耦电容器 - Google Patents

高效率半交叉耦合去耦电容器 Download PDF

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Publication number
CN108141214B
CN108141214B CN201580080820.9A CN201580080820A CN108141214B CN 108141214 B CN108141214 B CN 108141214B CN 201580080820 A CN201580080820 A CN 201580080820A CN 108141214 B CN108141214 B CN 108141214B
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CN108141214A (zh
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阿尔佛雷德·杨
罗恩·科汉
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Ampere Computing LLC
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Ampere Computing LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201580080820.9A 2015-06-11 2015-07-30 高效率半交叉耦合去耦电容器 Active CN108141214B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/736,882 2015-06-11
US14/736,882 US9438225B1 (en) 2015-06-11 2015-06-11 High efficiency half-cross-coupled decoupling capacitor
PCT/US2015/042798 WO2016200411A1 (en) 2015-06-11 2015-07-30 High efficiency half-cross-coupled decoupling capacitor

Publications (2)

Publication Number Publication Date
CN108141214A CN108141214A (zh) 2018-06-08
CN108141214B true CN108141214B (zh) 2019-06-11

Family

ID=56878301

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580080820.9A Active CN108141214B (zh) 2015-06-11 2015-07-30 高效率半交叉耦合去耦电容器

Country Status (5)

Country Link
US (1) US9438225B1 (enExample)
EP (2) EP3308464B1 (enExample)
JP (1) JP6437674B2 (enExample)
CN (1) CN108141214B (enExample)
WO (1) WO2016200411A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10032763B2 (en) * 2016-06-02 2018-07-24 Qualcomm Incorporated Bulk cross-coupled high density power supply decoupling capacitor
US10892260B2 (en) * 2019-03-06 2021-01-12 Himax Technologies Limited Capacitor
US11244895B2 (en) 2020-06-01 2022-02-08 Qualcomm Incorporated Intertwined well connection and decoupling capacitor layout structure for integrated circuits
KR102861814B1 (ko) 2020-09-29 2025-09-17 삼성전자주식회사 비대칭 디커플링 셀을 포함하는 집적 회로 및 이를 설계하는 방법

Citations (3)

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JPH08307229A (ja) * 1995-04-28 1996-11-22 Fuji Electric Co Ltd 負荷駆動回路
CN1812263A (zh) * 2005-01-24 2006-08-02 富士通株式会社 缓冲器电路和集成电路
CN103959457A (zh) * 2011-11-14 2014-07-30 日本电气株式会社 去耦电路和半导体集成电路

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KR100236876B1 (ko) * 1990-03-28 2000-01-15 가나이 쓰도무 신호의 스윙을 저감하는 cmos 회로
SE470415B (sv) 1992-07-06 1994-02-14 Ericsson Telefon Ab L M Kondensator med hög kapacitans i ett integrerat funktionsblock eller en integrerad krets, förfarande för framställning av kondensatorn och användning av kondensatorn som en integrerad avkopplingskondensator
JPH08102652A (ja) 1994-10-03 1996-04-16 Seiko Epson Corp 半導体集積回路
JPH0993111A (ja) 1995-09-28 1997-04-04 Toshiba Microelectron Corp スルーレート型バッファ回路
JPH09148909A (ja) 1995-11-17 1997-06-06 Hitachi Ltd 半導体集積回路装置
US5883423A (en) * 1996-02-23 1999-03-16 National Semiconductor Corporation Decoupling capacitor for integrated circuit signal driver
JPH11186497A (ja) * 1997-12-17 1999-07-09 Toshiba Corp 半導体集積回路装置
JP3838769B2 (ja) 1997-12-25 2006-10-25 川崎マイクロエレクトロニクス株式会社 出力バッファ回路
JP2000286388A (ja) * 1999-03-30 2000-10-13 Advantest Corp 半導体デバイス
US6936917B2 (en) 2001-09-26 2005-08-30 Molex Incorporated Power delivery connector for integrated circuits utilizing integrated capacitors
JP4342833B2 (ja) * 2003-05-16 2009-10-14 Ｎｅｃエレクトロニクス株式会社 容量セルと半導体装置及びその製造方法
KR100592787B1 (ko) 2004-11-09 2006-06-26 삼성전자주식회사 링 형태의 실리콘 디커플링 커패시터를 가지는 집적회로칩 패키지
US8160824B2 (en) 2005-01-27 2012-04-17 Electro Industries/Gauge Tech Intelligent electronic device with enhanced power quality monitoring and communication capabilities
JP4841204B2 (ja) * 2005-08-31 2011-12-21 ルネサスエレクトロニクス株式会社 半導体装置
JP5092263B2 (ja) * 2006-03-31 2012-12-05 富士通セミコンダクター株式会社 デカップリングコンデンサ及び半導体集積回路装置
US7903679B1 (en) 2006-04-11 2011-03-08 Altera Corporation Power supply filtering for programmable logic device having heterogeneous serial interface architecture
US8134824B2 (en) * 2008-02-19 2012-03-13 Arm Limited Decoupling capacitors
JP2009246062A (ja) * 2008-03-31 2009-10-22 Hitachi Ltd 半導体集積回路装置、および、その製造方法
US8345396B2 (en) * 2010-03-08 2013-01-01 Macronix International Co., Ltd. Electrostatic discharge protectors having increased RC delays
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US9029173B2 (en) 2011-10-18 2015-05-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8963575B2 (en) * 2012-09-26 2015-02-24 Sandisk Technologies Inc. Analog majority vote circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08307229A (ja) * 1995-04-28 1996-11-22 Fuji Electric Co Ltd 負荷駆動回路
CN1812263A (zh) * 2005-01-24 2006-08-02 富士通株式会社 缓冲器电路和集成电路
CN103959457A (zh) * 2011-11-14 2014-07-30 日本电气株式会社 去耦电路和半导体集成电路

Also Published As

Publication number Publication date
EP3934101A2 (en) 2022-01-05
EP3308464A4 (en) 2019-05-08
US9438225B1 (en) 2016-09-06
JP6437674B2 (ja) 2018-12-12
EP3934101A3 (en) 2022-04-27
JP2018521504A (ja) 2018-08-02
EP3308464A1 (en) 2018-04-18
CN108141214A (zh) 2018-06-08
WO2016200411A1 (en) 2016-12-15
EP3308464B1 (en) 2021-10-06

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