CN108122937B - 成像器件 - Google Patents

成像器件 Download PDF

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Publication number
CN108122937B
CN108122937B CN201711200024.1A CN201711200024A CN108122937B CN 108122937 B CN108122937 B CN 108122937B CN 201711200024 A CN201711200024 A CN 201711200024A CN 108122937 B CN108122937 B CN 108122937B
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China
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charge holding
imaging device
unit
photoelectric conversion
pixels
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CN201711200024.1A
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Chinese (zh)
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CN108122937A (zh
Inventor
关根宽
大贯裕介
小林昌弘
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/50—Depth or shape recovery
    • G06T7/55—Depth or shape recovery from multiple images
    • G06T7/571—Depth or shape recovery from multiple images from focus
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201711200024.1A 2016-11-30 2017-11-27 成像器件 Active CN108122937B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-232726 2016-11-30
JP2016232726A JP2018092976A (ja) 2016-11-30 2016-11-30 撮像装置

Publications (2)

Publication Number Publication Date
CN108122937A CN108122937A (zh) 2018-06-05
CN108122937B true CN108122937B (zh) 2022-02-11

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US (1) US10483307B2 (enExample)
JP (1) JP2018092976A (enExample)
CN (1) CN108122937B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4759590B2 (ja) 2008-05-09 2011-08-31 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
US10818715B2 (en) 2017-06-26 2020-10-27 Canon Kabushiki Kaisha Solid state imaging device and manufacturing method thereof
JP6987562B2 (ja) 2017-07-28 2022-01-05 キヤノン株式会社 固体撮像素子
JP7091080B2 (ja) 2018-02-05 2022-06-27 キヤノン株式会社 装置、システム、および移動体
JP7108421B2 (ja) 2018-02-15 2022-07-28 キヤノン株式会社 撮像装置及び撮像システム
JP7161317B2 (ja) 2018-06-14 2022-10-26 キヤノン株式会社 撮像装置、撮像システム及び移動体
EP3608688B1 (en) * 2018-08-09 2021-01-27 OMRON Corporation Distance measuring device
JP7356214B2 (ja) 2018-09-04 2023-10-04 キヤノン株式会社 撮像装置、その製造方法及びカメラ
JP6929266B2 (ja) 2018-12-17 2021-09-01 キヤノン株式会社 光電変換装置、光電変換システム、移動体
JP7292868B2 (ja) 2018-12-18 2023-06-19 キヤノン株式会社 検出器
JP2020115516A (ja) * 2019-01-17 2020-07-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US12075173B2 (en) * 2019-12-17 2024-08-27 Sony Semiconductor Solutions Corporation Imaging element and electronic device with light shielding portion between pixels
JP7652543B2 (ja) 2020-07-29 2025-03-27 キヤノン株式会社 光電変換装置
JP7534902B2 (ja) 2020-09-23 2024-08-15 キヤノン株式会社 光電変換装置、撮像装置、半導体装置及び光電変換システム
JP7610422B2 (ja) 2021-02-03 2025-01-08 キヤノン株式会社 撮像装置、撮像システムおよび移動体
JP2023023218A (ja) 2021-08-04 2023-02-16 キヤノン株式会社 光電変換装置
JP7753044B2 (ja) 2021-10-20 2025-10-14 キヤノン株式会社 光電変換装置
US12317611B2 (en) 2021-11-25 2025-05-27 Canon Kabushiki Kaisha Photoelectric conversion element and photoelectric conversion device
US12477853B2 (en) 2022-01-01 2025-11-18 Canon Kabushiki Kaisha Photoelectric conversion apparatus and photoelectric conversion system
JP2023099395A (ja) 2022-01-01 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、および機器
JP7786823B2 (ja) 2022-01-01 2025-12-16 キヤノン株式会社 光電変換装置及び光電変換システム
JP2024073685A (ja) 2022-11-18 2024-05-30 キヤノン株式会社 光電変換装置及びその駆動方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2007119626A1 (ja) * 2006-03-31 2009-08-27 国立大学法人静岡大学 半導体測距素子及び固体撮像装置
CN102017149A (zh) * 2008-05-01 2011-04-13 佳能株式会社 固态成像装置
CN102202189A (zh) * 2010-03-25 2011-09-28 索尼公司 固体摄像装置和电子装置
JP2012124611A (ja) * 2010-12-06 2012-06-28 Honda Motor Co Ltd 固体撮像装置、撮像方法及び２足歩行ロボット
CN104469200A (zh) * 2013-09-25 2015-03-25 索尼公司 固态成像设备及其操作方法以及电子装置及其操作方法
CN104917980A (zh) * 2014-03-14 2015-09-16 佳能株式会社 固态成像设备和成像系统
CN105934826A (zh) * 2014-12-18 2016-09-07 索尼公司 固态图像传感器、成像装置和电子设备

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5132102B2 (ja) 2006-08-01 2013-01-30 キヤノン株式会社 光電変換装置および光電変換装置を用いた撮像システム
JP4818018B2 (ja) 2006-08-01 2011-11-16 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP5127536B2 (ja) 2008-03-31 2013-01-23 キヤノン株式会社 固体撮像装置の駆動方法及び撮像システム
JP4494492B2 (ja) 2008-04-09 2010-06-30 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
JP5213501B2 (ja) 2008-04-09 2013-06-19 キヤノン株式会社 固体撮像装置
JP4759590B2 (ja) 2008-05-09 2011-08-31 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP2009278241A (ja) 2008-05-13 2009-11-26 Canon Inc 固体撮像装置の駆動方法および固体撮像装置
JP5279352B2 (ja) 2008-06-06 2013-09-04 キヤノン株式会社 固体撮像装置
JP2010268080A (ja) 2009-05-12 2010-11-25 Canon Inc 固体撮像装置
KR101385014B1 (ko) * 2009-10-09 2014-04-14 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 반도체 소자 및 고체 촬상 장치
JP2013093553A (ja) 2011-10-04 2013-05-16 Canon Inc 光電変換装置及びその製造方法、並びに光電変換システム
JP5967944B2 (ja) 2012-01-18 2016-08-10 キヤノン株式会社 固体撮像装置およびカメラ
JP6053505B2 (ja) 2012-01-18 2016-12-27 キヤノン株式会社 固体撮像装置
JP2014049727A (ja) 2012-09-04 2014-03-17 Canon Inc 固体撮像装置
JP2014165270A (ja) * 2013-02-22 2014-09-08 Sony Corp イメージセンサおよび電子機器
JP6261361B2 (ja) 2014-02-04 2018-01-17 キヤノン株式会社 固体撮像装置およびカメラ
JP6274567B2 (ja) 2014-03-14 2018-02-07 キヤノン株式会社 固体撮像装置及び撮像システム
JP6541347B2 (ja) 2014-03-27 2019-07-10 キヤノン株式会社 固体撮像装置および撮像システム
JP6417197B2 (ja) 2014-11-27 2018-10-31 キヤノン株式会社 固体撮像装置
US9768213B2 (en) 2015-06-03 2017-09-19 Canon Kabushiki Kaisha Solid-state image sensor and camera
JP6570384B2 (ja) 2015-09-11 2019-09-04 キヤノン株式会社 撮像装置及び撮像システム
US10205894B2 (en) 2015-09-11 2019-02-12 Canon Kabushiki Kaisha Imaging device and imaging system
JP6541523B2 (ja) 2015-09-11 2019-07-10 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の制御方法
JP6744748B2 (ja) 2016-04-06 2020-08-19 キヤノン株式会社 固体撮像装置及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2007119626A1 (ja) * 2006-03-31 2009-08-27 国立大学法人静岡大学 半導体測距素子及び固体撮像装置
CN102017149A (zh) * 2008-05-01 2011-04-13 佳能株式会社 固态成像装置
CN102202189A (zh) * 2010-03-25 2011-09-28 索尼公司 固体摄像装置和电子装置
JP2012124611A (ja) * 2010-12-06 2012-06-28 Honda Motor Co Ltd 固体撮像装置、撮像方法及び２足歩行ロボット
CN104469200A (zh) * 2013-09-25 2015-03-25 索尼公司 固态成像设备及其操作方法以及电子装置及其操作方法
CN104917980A (zh) * 2014-03-14 2015-09-16 佳能株式会社 固态成像设备和成像系统
CN105934826A (zh) * 2014-12-18 2016-09-07 索尼公司 固态图像传感器、成像装置和电子设备

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US10483307B2 (en) 2019-11-19
CN108122937A (zh) 2018-06-05
JP2018092976A (ja) 2018-06-14
US20180151616A1 (en) 2018-05-31

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