CN1079988C - 用于在容器中湿处理衬底的方法及设备 - Google Patents

用于在容器中湿处理衬底的方法及设备 Download PDF

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Publication number
CN1079988C
CN1079988C CN96193885A CN96193885A CN1079988C CN 1079988 C CN1079988 C CN 1079988C CN 96193885 A CN96193885 A CN 96193885A CN 96193885 A CN96193885 A CN 96193885A CN 1079988 C CN1079988 C CN 1079988C
Authority
CN
China
Prior art keywords
container
overflow
fluid
substrate
fluid discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN96193885A
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English (en)
Chinese (zh)
Other versions
CN1184557A (zh
Inventor
L·登茨列尔
H·哈姆斯-詹森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steag Microtech GmbH
Original Assignee
Steag Microtech GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steag Microtech GmbH filed Critical Steag Microtech GmbH
Publication of CN1184557A publication Critical patent/CN1184557A/zh
Application granted granted Critical
Publication of CN1079988C publication Critical patent/CN1079988C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D21/00—Separation of suspended solid particles from liquids by sedimentation
    • B01D21/24—Feed or discharge mechanisms for settling tanks
    • B01D21/2433—Discharge mechanisms for floating particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN96193885A 1995-05-12 1996-05-02 用于在容器中湿处理衬底的方法及设备 Expired - Fee Related CN1079988C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19517573.5 1995-05-12
DE19517573A DE19517573C2 (de) 1995-05-12 1995-05-12 Verfahren und Vorrichtung zur Naßbehandlung von Substraten in einem Behälter

Publications (2)

Publication Number Publication Date
CN1184557A CN1184557A (zh) 1998-06-10
CN1079988C true CN1079988C (zh) 2002-02-27

Family

ID=7761821

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96193885A Expired - Fee Related CN1079988C (zh) 1995-05-12 1996-05-02 用于在容器中湿处理衬底的方法及设备

Country Status (10)

Country Link
US (1) US5879464A (enExample)
EP (1) EP0826232B1 (enExample)
JP (1) JP3088466B2 (enExample)
KR (1) KR100303230B1 (enExample)
CN (1) CN1079988C (enExample)
AT (1) ATE186423T1 (enExample)
CA (1) CA2217777A1 (enExample)
DE (2) DE19517573C2 (enExample)
TW (1) TW303309B (enExample)
WO (1) WO1996036068A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1116868A (ja) * 1997-06-27 1999-01-22 Toshiba Corp 薬液置換装置及び薬液置換方法
US6216709B1 (en) 1998-09-04 2001-04-17 Komag, Inc. Method for drying a substrate
US6571806B2 (en) 1998-09-04 2003-06-03 Komag, Inc. Method for drying a substrate
GB2351279B (en) * 1999-06-22 2001-08-01 John Joseph Devuyst Draining vessel
US6286231B1 (en) 2000-01-12 2001-09-11 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
DE10359320A1 (de) * 2003-12-17 2005-07-21 Scp Germany Gmbh Vorrichtung und Verfahren zum Trocknen von Substraten
KR101951778B1 (ko) * 2017-07-25 2019-02-25 무진전자 주식회사 웨이퍼 에칭 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1045539A (zh) * 1989-02-27 1990-09-26 菲利浦光灯制造公司 对经液体处理后的基片进行干燥的方法和装置
CN1057796A (zh) * 1990-05-01 1992-01-15 富士通株式会社 清洗/干燥的方法及其装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT208307B (de) * 1959-02-10 1960-03-25 Franz Dr Ing Boehm Zumeßvorrichtung zur proportionalen Einbringung von Chemikalienlösungen in periodisch beschickte Behälter
US4722752A (en) * 1986-06-16 1988-02-02 Robert F. Orr Apparatus and method for rinsing and drying silicon wafers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1045539A (zh) * 1989-02-27 1990-09-26 菲利浦光灯制造公司 对经液体处理后的基片进行干燥的方法和装置
CN1057796A (zh) * 1990-05-01 1992-01-15 富士通株式会社 清洗/干燥的方法及其装置

Also Published As

Publication number Publication date
CN1184557A (zh) 1998-06-10
DE19517573A1 (de) 1996-11-14
CA2217777A1 (en) 1996-11-14
JPH10510101A (ja) 1998-09-29
US5879464A (en) 1999-03-09
EP0826232B1 (de) 1999-11-03
TW303309B (enExample) 1997-04-21
KR19990014690A (ko) 1999-02-25
EP0826232A1 (de) 1998-03-04
ATE186423T1 (de) 1999-11-15
KR100303230B1 (ko) 2001-11-30
DE59603571D1 (de) 1999-12-09
DE19517573C2 (de) 2000-11-02
JP3088466B2 (ja) 2000-09-18
WO1996036068A1 (de) 1996-11-14

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