CN1078629C - 铜及铜合金的浸蚀液 - Google Patents
铜及铜合金的浸蚀液 Download PDFInfo
- Publication number
- CN1078629C CN1078629C CN95105687A CN95105687A CN1078629C CN 1078629 C CN1078629 C CN 1078629C CN 95105687 A CN95105687 A CN 95105687A CN 95105687 A CN95105687 A CN 95105687A CN 1078629 C CN1078629 C CN 1078629C
- Authority
- CN
- China
- Prior art keywords
- copper
- etching solution
- sulfuric acid
- sodium persulfate
- copper alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 20
- 239000010949 copper Substances 0.000 title claims abstract description 20
- 229910000881 Cu alloy Inorganic materials 0.000 title claims description 11
- 239000007788 liquid Substances 0.000 title description 4
- 238000005530 etching Methods 0.000 claims abstract description 30
- 239000000243 solution Substances 0.000 claims abstract description 30
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims abstract description 12
- 150000002460 imidazoles Chemical class 0.000 claims abstract description 6
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 claims abstract description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 8
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 4
- 150000003921 pyrrolotriazines Chemical class 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000003222 pyridines Chemical class 0.000 abstract description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 abstract 1
- 150000003918 triazines Chemical class 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 38
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 16
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 16
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000007788 roughening Methods 0.000 description 8
- 239000002253 acid Substances 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- ICSNLGPSRYBMBD-UHFFFAOYSA-N 2-aminopyridine Chemical compound NC1=CC=CC=N1 ICSNLGPSRYBMBD-UHFFFAOYSA-N 0.000 description 4
- 239000004160 Ammonium persulphate Substances 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 235000019395 ammonium persulphate Nutrition 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- -1 2-ethyl imidazol Chemical compound 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 2
- FKNQCJSGGFJEIZ-UHFFFAOYSA-N 4-methylpyridine Chemical compound CC1=CC=NC=C1 FKNQCJSGGFJEIZ-UHFFFAOYSA-N 0.000 description 2
- FCOYDKPBHPALQK-UHFFFAOYSA-N 6-methyl-1h-triazine-2,4-diamine Chemical compound CC1=CC(N)=NN(N)N1 FCOYDKPBHPALQK-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229940015043 glyoxal Drugs 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- WOXFMYVTSLAQMO-UHFFFAOYSA-N 2-Pyridinemethanamine Chemical compound NCC1=CC=CC=N1 WOXFMYVTSLAQMO-UHFFFAOYSA-N 0.000 description 1
- MKBBSFGKFMQPPC-UHFFFAOYSA-N 2-propyl-1h-imidazole Chemical compound CCCC1=NC=CN1 MKBBSFGKFMQPPC-UHFFFAOYSA-N 0.000 description 1
- NUKYPUAOHBNCPY-UHFFFAOYSA-N 4-aminopyridine Chemical compound NC1=CC=NC=C1 NUKYPUAOHBNCPY-UHFFFAOYSA-N 0.000 description 1
- 150000003928 4-aminopyridines Chemical class 0.000 description 1
- HPSJFXKHFLNPQM-UHFFFAOYSA-N 5-propyl-1h-imidazole Chemical compound CCCC1=CNC=N1 HPSJFXKHFLNPQM-UHFFFAOYSA-N 0.000 description 1
- QGNWQOHCEMWYPG-UHFFFAOYSA-N 6-ethyl-1h-triazine-2,4-diamine Chemical compound CCC1=CC(N)=NN(N)N1 QGNWQOHCEMWYPG-UHFFFAOYSA-N 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- 229920006358 Fluon Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 208000003351 Melanosis Diseases 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- OBESRABRARNZJB-UHFFFAOYSA-N aminomethanesulfonic acid Chemical compound NCS(O)(=O)=O OBESRABRARNZJB-UHFFFAOYSA-N 0.000 description 1
- ZCHPOKZMTJTNHI-UHFFFAOYSA-L barium(2+);sulfonatooxy sulfate Chemical compound [Ba+2].[O-]S(=O)(=O)OOS([O-])(=O)=O ZCHPOKZMTJTNHI-UHFFFAOYSA-L 0.000 description 1
- 150000001565 benzotriazoles Chemical class 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229960004979 fampridine Drugs 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 1
- 239000011120 plywood Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- TXQWFIVRZNOPCK-UHFFFAOYSA-N pyridin-4-ylmethanamine Chemical compound NCC1=CC=NC=C1 TXQWFIVRZNOPCK-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- XOAAWQZATWQOTB-UHFFFAOYSA-N taurine Chemical compound NCCS(O)(=O)=O XOAAWQZATWQOTB-UHFFFAOYSA-N 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
- C23G1/103—Other heavy metals copper or alloys of copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/14—Nitrogen-containing compounds
- C23F11/149—Heterocyclic compounds containing nitrogen as hetero atom
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
- H05K2203/124—Heterocyclic organic compounds, e.g. azole, furan
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21073294A JP3400558B2 (ja) | 1994-08-12 | 1994-08-12 | 銅および銅合金のエッチング液 |
JP210732/94 | 1994-08-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1117531A CN1117531A (zh) | 1996-02-28 |
CN1078629C true CN1078629C (zh) | 2002-01-30 |
Family
ID=16594198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN95105687A Expired - Fee Related CN1078629C (zh) | 1994-08-12 | 1995-06-28 | 铜及铜合金的浸蚀液 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5700389A (ja) |
EP (1) | EP0696651A1 (ja) |
JP (1) | JP3400558B2 (ja) |
KR (1) | KR960007826A (ja) |
CN (1) | CN1078629C (ja) |
TW (1) | TW287208B (ja) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020111024A1 (en) * | 1996-07-25 | 2002-08-15 | Small Robert J. | Chemical mechanical polishing compositions |
US5869130A (en) * | 1997-06-12 | 1999-02-09 | Mac Dermid, Incorporated | Process for improving the adhesion of polymeric materials to metal surfaces |
US6162503A (en) * | 1997-06-12 | 2000-12-19 | Macdermid, Incorporated | Process for improving the adhesion of polymeric materials to metal surfaces |
US6146701A (en) * | 1997-06-12 | 2000-11-14 | Macdermid, Incorporated | Process for improving the adhension of polymeric materials to metal surfaces |
US6020029A (en) * | 1997-06-12 | 2000-02-01 | Macdermid, Incorporated | Process for treating metal surfaces |
JPH1129883A (ja) * | 1997-07-08 | 1999-02-02 | Mec Kk | 銅および銅合金のマイクロエッチング剤 |
JP3909920B2 (ja) * | 1997-07-24 | 2007-04-25 | メック株式会社 | 銅および銅合金の表面処理法 |
US6141870A (en) | 1997-08-04 | 2000-11-07 | Peter K. Trzyna | Method for making electrical device |
US6284309B1 (en) | 1997-12-19 | 2001-09-04 | Atotech Deutschland Gmbh | Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom |
US6206756B1 (en) | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6276996B1 (en) * | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
JP2001181867A (ja) * | 1999-12-20 | 2001-07-03 | Asahi Denka Kogyo Kk | マイクロエッチング剤 |
JP2001181868A (ja) * | 1999-12-20 | 2001-07-03 | Asahi Denka Kogyo Kk | 銅及び銅合金用のマイクロエッチング剤 |
US6383272B1 (en) | 2000-06-08 | 2002-05-07 | Donald Ferrier | Process for improving the adhesion of polymeric materials to metal surfaces |
US6419784B1 (en) | 2000-06-21 | 2002-07-16 | Donald Ferrier | Process for improving the adhesion of polymeric materials to metal surfaces |
US6554948B1 (en) | 2000-08-22 | 2003-04-29 | Donald Ferrier | Process for improving the adhesion of polymeric materials to metal surfaces |
KR100419071B1 (ko) * | 2001-06-20 | 2004-02-19 | 엘지.필립스 엘시디 주식회사 | 구리-티타늄 막의 식각용액 및 그 식각방법 |
KR100456373B1 (ko) * | 2001-12-31 | 2004-11-09 | 엘지.필립스 엘시디 주식회사 | 구리 또는 구리/티타늄 식각액 |
CN101058712B (zh) * | 2003-06-13 | 2010-06-02 | 日立化成工业株式会社 | 金属用研磨液以及研磨方法 |
CN101058711B (zh) * | 2003-06-13 | 2011-07-20 | 日立化成工业株式会社 | 金属用研磨液以及研磨方法 |
AU2003242397A1 (en) * | 2003-06-13 | 2005-01-04 | Hitachi Chemical Co., Ltd. | Polishing fluid for metal and polishing method |
KR100960687B1 (ko) * | 2003-06-24 | 2010-06-01 | 엘지디스플레이 주식회사 | 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액 |
US7232478B2 (en) * | 2003-07-14 | 2007-06-19 | Enthone Inc. | Adhesion promotion in printed circuit boards |
US7541275B2 (en) * | 2004-04-21 | 2009-06-02 | Texas Instruments Incorporated | Method for manufacturing an interconnect |
DE102004045297A1 (de) * | 2004-09-16 | 2006-03-23 | Basf Ag | Verfahren zum Behandeln von metallischen Oberflächen unter Verwendung von Formulierungen auf Basis von wasserarmer Methansulfonsäure |
US7393461B2 (en) * | 2005-08-23 | 2008-07-01 | Kesheng Feng | Microetching solution |
KR101310310B1 (ko) * | 2007-03-15 | 2013-09-23 | 주식회사 동진쎄미켐 | 박막트랜지스터 액정표시장치의 식각액 조성물 |
US20080224092A1 (en) * | 2007-03-15 | 2008-09-18 | Samsung Electronics Co., Ltd. | Etchant for metal |
JP5088352B2 (ja) * | 2009-08-24 | 2012-12-05 | 日立化成工業株式会社 | 金属用研磨液及び研磨方法 |
CN101736352B (zh) * | 2009-12-31 | 2011-04-13 | 河北省文物保护中心 | 青铜器文物修复液及其修复方法 |
KR20110087582A (ko) * | 2010-01-26 | 2011-08-03 | 삼성전자주식회사 | 식각액 조성물 및 이를 이용한 식각 방법 |
KR101608873B1 (ko) | 2010-03-18 | 2016-04-05 | 삼성디스플레이 주식회사 | 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법 |
EP2591645B1 (en) | 2010-07-06 | 2018-09-05 | Namics Corporation | Methods of treating copper surfaces for enhancing adhesion to organic substrates for use in printed circuit boards |
JP6251568B2 (ja) | 2010-07-06 | 2017-12-20 | アトテック ドイチェランド ゲーエムベーハー | 金属表面を処理する方法と、この方法によって形成された装置 |
US8956918B2 (en) * | 2012-12-20 | 2015-02-17 | Infineon Technologies Ag | Method of manufacturing a chip arrangement comprising disposing a metal structure over a carrier |
KR101527117B1 (ko) | 2013-06-27 | 2015-06-09 | 삼성디스플레이 주식회사 | 식각액 조성물, 이를 이용한 금속 배선 제조 방법 및 박막 트랜지스터 기판 제조방법 |
EP2853619A1 (en) * | 2013-09-25 | 2015-04-01 | ATOTECH Deutschland GmbH | Method for treatment of recessed structures in dielectric materials for smear removal |
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CN115558931B (zh) * | 2022-10-26 | 2023-07-04 | 广东华智芯电子科技有限公司 | 铜表面晶花的细化方法、腐蚀液组合及其应用 |
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FR2388898A1 (fr) * | 1977-04-27 | 1978-11-24 | Ugine Kuhlmann | Procede de decapage-brillantage pour le cuivre et ses alliages |
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US5066366A (en) * | 1990-05-04 | 1991-11-19 | Olin Corporation | Method for making foil |
US5391395A (en) * | 1992-12-30 | 1995-02-21 | Witco Corporation | Method of preparing substrates for memory disk applications |
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1994
- 1994-08-12 JP JP21073294A patent/JP3400558B2/ja not_active Expired - Fee Related
- 1994-09-22 TW TW083108715A patent/TW287208B/zh active
-
1995
- 1995-06-28 CN CN95105687A patent/CN1078629C/zh not_active Expired - Fee Related
- 1995-08-02 US US08/510,299 patent/US5700389A/en not_active Expired - Fee Related
- 1995-08-04 EP EP95112324A patent/EP0696651A1/en not_active Withdrawn
- 1995-08-10 KR KR1019950024686A patent/KR960007826A/ko not_active Application Discontinuation
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DE2453429A1 (de) * | 1973-11-19 | 1975-05-22 | Tokai Electro Chemical Co | Aetzloesungen fuer kupfer und kupferlegierungen |
DE3212410A1 (de) * | 1981-04-06 | 1982-10-28 | Mec Co., Ltd., Amagasaki Hyogo | Abstreifloesung fuer zinn und zinnlegierungen |
Also Published As
Publication number | Publication date |
---|---|
CN1117531A (zh) | 1996-02-28 |
KR960007826A (ko) | 1996-03-22 |
TW287208B (ja) | 1996-10-01 |
US5700389A (en) | 1997-12-23 |
EP0696651A1 (en) | 1996-02-14 |
JP3400558B2 (ja) | 2003-04-28 |
JPH0860386A (ja) | 1996-03-05 |
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