CN107845650B - 晶片堆叠的组装 - Google Patents

晶片堆叠的组装 Download PDF

Info

Publication number
CN107845650B
CN107845650B CN201710929068.1A CN201710929068A CN107845650B CN 107845650 B CN107845650 B CN 107845650B CN 201710929068 A CN201710929068 A CN 201710929068A CN 107845650 B CN107845650 B CN 107845650B
Authority
CN
China
Prior art keywords
wafer
stack
sub
substrate
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710929068.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN107845650A (zh
Inventor
哈特穆特·鲁德曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ames Osram Asia Pacific Pte Ltd
Sensors Singapore Private Ltd
Original Assignee
Heptagang Shiguang Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heptagang Shiguang Co ltd filed Critical Heptagang Shiguang Co ltd
Publication of CN107845650A publication Critical patent/CN107845650A/zh
Application granted granted Critical
Publication of CN107845650B publication Critical patent/CN107845650B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Bakery Products And Manufacturing Methods Therefor (AREA)
CN201710929068.1A 2012-05-17 2013-05-15 晶片堆叠的组装 Active CN107845650B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261648178P 2012-05-17 2012-05-17
US61/648,178 2012-05-17
CN201380027156.2A CN104335340B (zh) 2012-05-17 2013-05-15 晶片堆叠的组装

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201380027156.2A Division CN104335340B (zh) 2012-05-17 2013-05-15 晶片堆叠的组装

Publications (2)

Publication Number Publication Date
CN107845650A CN107845650A (zh) 2018-03-27
CN107845650B true CN107845650B (zh) 2021-10-26

Family

ID=49584061

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710929068.1A Active CN107845650B (zh) 2012-05-17 2013-05-15 晶片堆叠的组装
CN201380027156.2A Active CN104335340B (zh) 2012-05-17 2013-05-15 晶片堆叠的组装

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201380027156.2A Active CN104335340B (zh) 2012-05-17 2013-05-15 晶片堆叠的组装

Country Status (8)

Country Link
US (3) US9716081B2 (https=)
EP (1) EP2850654B1 (https=)
JP (2) JP6151354B2 (https=)
KR (2) KR102208832B1 (https=)
CN (2) CN107845650B (https=)
SG (2) SG10201701879RA (https=)
TW (1) TWI640080B (https=)
WO (1) WO2013172786A1 (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140160751A1 (en) * 2012-12-11 2014-06-12 Vixar Inc. Low cost optical package
WO2015053706A1 (en) 2013-10-08 2015-04-16 Heptagon Micro Optics Pte. Ltd. Partial spacers for wafer-level fabricated modules
CN105765722B (zh) * 2013-11-22 2019-10-22 赫普塔冈微光有限公司 紧凑光电模块
US20160011054A1 (en) * 2014-07-11 2016-01-14 Omnivision Technologies, Inc. Thermal imaging systems with vacuum-sealing lens cap and associated wafer-level manufacturing methods
KR101785879B1 (ko) * 2014-07-23 2017-10-16 헵타곤 마이크로 옵틱스 피티이. 리미티드 수직 정렬 피처들을 포함하는 광 방출기 및 광 검출기 모듈들
FR3025359B1 (fr) * 2014-09-01 2016-11-04 Soc Francaise De Detecteurs Infrarouges - Sofradir Procede de positionnement d'elements, notamment optiques sur la face arriere d'un detecteur infrarouge de type hybride
DE102015002536B4 (de) 2015-02-28 2021-10-28 Schölly Fiberoptic GmbH Optikanordnung, Endoskop und korrespondierendes Verfahren zur Fertigung
US20160307881A1 (en) * 2015-04-20 2016-10-20 Advanced Semiconductor Engineering, Inc. Optical sensor module and method for manufacturing the same
TWI596985B (zh) * 2015-07-22 2017-08-21 億光電子工業股份有限公司 發光裝置
KR102589817B1 (ko) * 2015-08-27 2023-10-13 에이엠에스-오스람 아시아 퍼시픽 피티이. 리미티드 기판에 직접 부착되는 스페이서를 포함하는 광학 어셈블리들
TWI708316B (zh) * 2015-10-07 2020-10-21 新加坡商海特根微光學公司 模製的電路基板
US20170219793A1 (en) * 2016-01-28 2017-08-03 AAC Technologies Pte. Ltd. Sealed module with glue guiding features and method for making same
EP3258493B1 (en) * 2016-06-16 2021-01-27 ams AG System-on-chip camera with integrated light sensor(s) and method of producing a system-on-chip camera
US10551596B2 (en) 2016-06-29 2020-02-04 Ams Sensors Singapore Pte. Ltd. Optical and optoelectronic assemblies including micro-spacers, and methods of manufacturing the same
US10461066B2 (en) * 2016-06-29 2019-10-29 Maxim Integrated Products, Inc. Structure and method for hybrid optical package with glass top cover
US10243111B2 (en) 2016-06-29 2019-03-26 Ams Sensors Singapore Pte. Ltd. Optoelectronic device subassemblies and methods of manufacturing the same
US20180017741A1 (en) * 2016-07-15 2018-01-18 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
WO2018166605A1 (de) * 2017-03-16 2018-09-20 Ev Group E. Thallner Gmbh Verfahren zum bonden von mindestens drei substraten
CN107180843B (zh) * 2017-05-17 2020-02-18 京东方科技集团股份有限公司 一种封装面板、器件封装结构及其制备方法
JP2019046981A (ja) * 2017-09-01 2019-03-22 株式会社村田製作所 光センサ装置およびその製造方法
EP3682281B1 (en) * 2017-09-12 2024-03-20 AMS Sensors Singapore Pte. Ltd. Wafer-level manufacture of micro-devices and related two-piece devices, in particular micro-optical systems
JP6925216B2 (ja) * 2017-09-28 2021-08-25 アズビル株式会社 光電センサ
CN109841748B (zh) * 2017-11-28 2021-05-07 群创光电股份有限公司 显示设备
US10811400B2 (en) * 2018-09-28 2020-10-20 Apple Inc. Wafer level optical module
US10636829B1 (en) * 2018-10-24 2020-04-28 Himax Technologies Limited Wafer-level optical structure
CN109375331B (zh) * 2018-11-21 2023-07-04 中国科学院上海技术物理研究所 一种多透镜阵列光轴垂直固化装置
WO2020258116A1 (en) 2019-06-27 2020-12-30 Yangtze Memory Technologies Co., Ltd. Marking pattern in forming staircase structure of three-dimensional memory device
CN110945660B (zh) * 2019-11-12 2024-01-23 深圳市汇顶科技股份有限公司 堆叠式的芯片、制造方法、图像传感器和电子设备
KR102312392B1 (ko) * 2020-03-05 2021-10-15 (주) 브로젠 라이다 모듈용 기판의 접합 방법
KR102387982B1 (ko) * 2020-03-05 2022-04-19 (주) 브로젠 라이다 모듈의 제조 방법
DE102020215033A1 (de) * 2020-11-30 2022-06-02 Robert Bosch Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
KR102896852B1 (ko) * 2021-01-28 2025-12-04 삼성전자주식회사 렌즈 어레이, 이를 포함한 이미지 장치 및 그 제조 방법
CN115728914B (zh) * 2022-11-18 2024-07-19 厦门力鼎光电股份有限公司 一种光学成像镜头

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6458623B1 (en) * 2001-01-17 2002-10-01 International Business Machines Corporation Conductive adhesive interconnection with insulating polymer carrier
WO2008045968A3 (en) * 2006-10-10 2009-01-08 Adco Products Inc Radiation curable sealant composition
JP2009016534A (ja) * 2007-07-04 2009-01-22 Tokyo Electron Ltd 貼り合せ方法及び貼り合せ用基板
WO2010020062A1 (en) * 2008-08-20 2010-02-25 Heptagon Oy Method of manufacturing a pluralty of optical devices
CN101752271A (zh) * 2008-12-01 2010-06-23 夏普株式会社 电子元件晶片模块、光学元件晶片模块及其制造方法
CN101971341A (zh) * 2007-12-19 2011-02-09 赫普塔冈有限公司 晶片堆叠、集成电路器件及其制造方法
WO2011156928A3 (en) * 2010-06-14 2012-02-23 Heptagon Oy Camera, and method of manufacturing a plurality of cameras

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60149984A (ja) 1984-01-17 1985-08-07 Nissan Motor Co Ltd 距離測定装置
JPH05165037A (ja) * 1991-12-12 1993-06-29 Matsushita Electric Ind Co Ltd 液晶パネルの製造方法
US5368683A (en) 1993-11-02 1994-11-29 Xerox Corporation Method of fabricating ink jet printheads
US6096155A (en) 1996-09-27 2000-08-01 Digital Optics Corporation Method of dicing wafer level integrated multiple optical elements
KR100277309B1 (ko) * 1997-06-13 2001-01-15 마찌다 가쯔히꼬 액정 표시 장치 및 그 제조 방법
EP1135802A4 (en) 1998-07-27 2004-08-25 Reveo Inc THREE-DIMENSIONAL PACKAGING TECHNOLOGY FOR MULTI-LAYER INTEGRATED CIRCUITS
DE19908214B4 (de) 1999-02-25 2006-08-31 Siemens Ag Strahlungsemittierende Vorrichtung und Verfahren zum Erfassen eines Objektes oder einer Person in Innenraum eines Fahrzeugs
JP3697926B2 (ja) * 1999-03-05 2005-09-21 セイコーエプソン株式会社 半導体装置の製造方法
US6324010B1 (en) * 1999-07-19 2001-11-27 Eastman Kodak Company Optical assembly and a method for manufacturing lens systems
JP2001252618A (ja) * 2000-03-09 2001-09-18 Ricoh Co Ltd 部品締結方法
JP2002110852A (ja) 2000-10-03 2002-04-12 Ibiden Co Ltd 半導体パッケージ、及び半導体チップの接続構造
JP4618859B2 (ja) * 2000-10-10 2011-01-26 東レエンジニアリング株式会社 積層ウエハーのアライメント方法
US20040012698A1 (en) * 2001-03-05 2004-01-22 Yasuo Suda Image pickup model and image pickup device
JP2002290842A (ja) * 2001-03-23 2002-10-04 Sanyo Electric Co Ltd 固体撮像素子の製造方法
US6826830B2 (en) 2002-02-05 2004-12-07 International Business Machines Corporation Multi-layered interconnect structure using liquid crystalline polymer dielectric
KR20070096020A (ko) * 2002-09-17 2007-10-01 앤터온 비.브이. 카메라 디바이스, 카메라 디바이스 제조 방법, 웨이퍼스케일 패키지 및 광학 어셈블리
JP2004207644A (ja) * 2002-12-26 2004-07-22 Toto Ltd 静電チャック及びこれを用いた貼合わせ基板製造装置
JP2005026587A (ja) * 2003-07-04 2005-01-27 Fujikura Ltd 多層基板用基材、多層基板およびその製造方法
JP4551638B2 (ja) * 2003-08-01 2010-09-29 富士フイルム株式会社 固体撮像装置の製造方法
CN1875617A (zh) * 2003-10-27 2006-12-06 皇家飞利浦电子股份有限公司 相机模块以及该相机模块的制造方法
JP2006224193A (ja) * 2005-02-15 2006-08-31 Olympus Corp 電子装置及び電子装置の製造方法
US7378724B2 (en) * 2005-03-24 2008-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Cavity structure for semiconductor structures
JP2007184680A (ja) * 2006-01-04 2007-07-19 Fujifilm Corp 固体撮像装置及びその製造方法
US20070284758A1 (en) * 2006-05-22 2007-12-13 General Electric Company Electronics package and associated method
KR100959922B1 (ko) * 2007-11-20 2010-05-26 삼성전자주식회사 카메라 모듈 및 그 제조방법
KR100969987B1 (ko) * 2008-01-10 2010-07-15 연세대학교 산학협력단 광학패키지 웨이퍼스케일 어레이 및 그 제조방법
SG189800A1 (en) 2008-04-17 2013-05-31 Shilat Optronics Ltd Intrusion warning system
US8866920B2 (en) * 2008-05-20 2014-10-21 Pelican Imaging Corporation Capturing and processing of images using monolithic camera array with heterogeneous imagers
JP4764941B2 (ja) 2008-09-25 2011-09-07 シャープ株式会社 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
JP4768060B2 (ja) * 2008-09-25 2011-09-07 シャープ株式会社 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
JP4764942B2 (ja) * 2008-09-25 2011-09-07 シャープ株式会社 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
JP4816704B2 (ja) * 2008-09-25 2011-11-16 富士ゼロックス株式会社 指示システム、指示プログラム
TW201015727A (en) * 2008-10-07 2010-04-16 Nexpower Technology Corp Thin-film solar cell
EP2264898B1 (en) 2009-06-17 2013-05-22 OSRAM Opto Semiconductors GmbH Optical proximity sensor
KR101648540B1 (ko) * 2009-08-13 2016-08-16 삼성전자주식회사 웨이퍼-레벨 렌즈 모듈 및 이를 구비하는 촬상 장치
JP2011113075A (ja) * 2009-11-30 2011-06-09 Fujifilm Corp ウェハレベルレンズの製造方法
JP5533339B2 (ja) 2010-06-28 2014-06-25 ソニー株式会社 光電変換装置とそのパッケージ構造、並びに光電変換装置の製造方法
US8805302B2 (en) 2011-05-19 2014-08-12 Apple Inc. Proximity and ambient light sensor with improved smudge rejection
US8487256B2 (en) 2011-08-31 2013-07-16 Apple Inc. Proximity sensor
US9595553B2 (en) * 2012-11-02 2017-03-14 Heptagon Micro Optics Pte. Ltd. Optical modules including focal length adjustment and fabrication of the optical modules

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6458623B1 (en) * 2001-01-17 2002-10-01 International Business Machines Corporation Conductive adhesive interconnection with insulating polymer carrier
WO2008045968A3 (en) * 2006-10-10 2009-01-08 Adco Products Inc Radiation curable sealant composition
JP2009016534A (ja) * 2007-07-04 2009-01-22 Tokyo Electron Ltd 貼り合せ方法及び貼り合せ用基板
CN101971341A (zh) * 2007-12-19 2011-02-09 赫普塔冈有限公司 晶片堆叠、集成电路器件及其制造方法
WO2010020062A1 (en) * 2008-08-20 2010-02-25 Heptagon Oy Method of manufacturing a pluralty of optical devices
CN101752271A (zh) * 2008-12-01 2010-06-23 夏普株式会社 电子元件晶片模块、光学元件晶片模块及其制造方法
WO2011156928A3 (en) * 2010-06-14 2012-02-23 Heptagon Oy Camera, and method of manufacturing a plurality of cameras

Also Published As

Publication number Publication date
CN104335340B (zh) 2017-11-03
JP6151354B2 (ja) 2017-06-21
US20180261585A1 (en) 2018-09-13
EP2850654A4 (en) 2015-11-04
TWI640080B (zh) 2018-11-01
JP2015519751A (ja) 2015-07-09
JP6437590B2 (ja) 2018-12-12
US20170309605A1 (en) 2017-10-26
KR20150013780A (ko) 2015-02-05
WO2013172786A1 (en) 2013-11-21
CN104335340A (zh) 2015-02-04
KR102107575B1 (ko) 2020-05-08
SG11201407221TA (en) 2014-12-30
TW201405764A (zh) 2014-02-01
US9716081B2 (en) 2017-07-25
SG10201701879RA (en) 2017-04-27
KR20200049894A (ko) 2020-05-08
KR102208832B1 (ko) 2021-01-29
EP2850654A1 (en) 2015-03-25
US10903197B2 (en) 2021-01-26
US20150115413A1 (en) 2015-04-30
EP2850654B1 (en) 2016-10-26
JP2017199912A (ja) 2017-11-02
US9997506B2 (en) 2018-06-12
CN107845650A (zh) 2018-03-27

Similar Documents

Publication Publication Date Title
CN107845650B (zh) 晶片堆叠的组装
KR102123128B1 (ko) 광전 모듈들 및 그 제조 방법들
JP6328813B2 (ja) リフロー可能な光電子モジュール
TWI591753B (zh) 用於固持一晶圓或晶圓子堆疊之真空吸頭之使用
TWI850304B (zh) 包括光發射器及光接收器之光電模組

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address

Address after: Shinka ha

Patentee after: Ames Osram Asia Pacific Pte. Ltd.

Country or region after: Singapore

Address before: Shinka ha

Patentee before: Sensors Singapore Private Ltd.

Country or region before: Singapore

Address after: Shinka ha

Patentee after: Sensors Singapore Private Ltd.

Country or region after: Singapore

Address before: 26 Woodland Loop, Singapore City, Singapore

Patentee before: HEPTAGON MICRO OPTICS Pte. Ltd.

Country or region before: Singapore

CP03 Change of name, title or address