TWI640080B - 晶圓堆疊之組裝 - Google Patents

晶圓堆疊之組裝 Download PDF

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Publication number
TWI640080B
TWI640080B TW102117440A TW102117440A TWI640080B TW I640080 B TWI640080 B TW I640080B TW 102117440 A TW102117440 A TW 102117440A TW 102117440 A TW102117440 A TW 102117440A TW I640080 B TWI640080 B TW I640080B
Authority
TW
Taiwan
Prior art keywords
wafer
stack
optical
curable adhesive
spacer
Prior art date
Application number
TW102117440A
Other languages
English (en)
Chinese (zh)
Other versions
TW201405764A (zh
Inventor
哈特牧 魯德曼
Hartmut Rudmann
Original Assignee
海特根微光學公司
Heptagon Micro Optics Pte. Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 海特根微光學公司, Heptagon Micro Optics Pte. Ltd. filed Critical 海特根微光學公司
Publication of TW201405764A publication Critical patent/TW201405764A/zh
Application granted granted Critical
Publication of TWI640080B publication Critical patent/TWI640080B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Bakery Products And Manufacturing Methods Therefor (AREA)
TW102117440A 2012-05-17 2013-05-16 晶圓堆疊之組裝 TWI640080B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261648178P 2012-05-17 2012-05-17
US61/648,178 2012-05-17

Publications (2)

Publication Number Publication Date
TW201405764A TW201405764A (zh) 2014-02-01
TWI640080B true TWI640080B (zh) 2018-11-01

Family

ID=49584061

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102117440A TWI640080B (zh) 2012-05-17 2013-05-16 晶圓堆疊之組裝

Country Status (8)

Country Link
US (3) US9716081B2 (https=)
EP (1) EP2850654B1 (https=)
JP (2) JP6151354B2 (https=)
KR (2) KR102208832B1 (https=)
CN (2) CN107845650B (https=)
SG (2) SG10201701879RA (https=)
TW (1) TWI640080B (https=)
WO (1) WO2013172786A1 (https=)

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TWI708316B (zh) * 2015-10-07 2020-10-21 新加坡商海特根微光學公司 模製的電路基板
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US10243111B2 (en) 2016-06-29 2019-03-26 Ams Sensors Singapore Pte. Ltd. Optoelectronic device subassemblies and methods of manufacturing the same
US20180017741A1 (en) * 2016-07-15 2018-01-18 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
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JP6925216B2 (ja) * 2017-09-28 2021-08-25 アズビル株式会社 光電センサ
CN109841748B (zh) * 2017-11-28 2021-05-07 群创光电股份有限公司 显示设备
US10811400B2 (en) * 2018-09-28 2020-10-20 Apple Inc. Wafer level optical module
US10636829B1 (en) * 2018-10-24 2020-04-28 Himax Technologies Limited Wafer-level optical structure
CN109375331B (zh) * 2018-11-21 2023-07-04 中国科学院上海技术物理研究所 一种多透镜阵列光轴垂直固化装置
WO2020258116A1 (en) 2019-06-27 2020-12-30 Yangtze Memory Technologies Co., Ltd. Marking pattern in forming staircase structure of three-dimensional memory device
CN110945660B (zh) * 2019-11-12 2024-01-23 深圳市汇顶科技股份有限公司 堆叠式的芯片、制造方法、图像传感器和电子设备
KR102312392B1 (ko) * 2020-03-05 2021-10-15 (주) 브로젠 라이다 모듈용 기판의 접합 방법
KR102387982B1 (ko) * 2020-03-05 2022-04-19 (주) 브로젠 라이다 모듈의 제조 방법
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Also Published As

Publication number Publication date
CN104335340B (zh) 2017-11-03
JP6151354B2 (ja) 2017-06-21
US20180261585A1 (en) 2018-09-13
EP2850654A4 (en) 2015-11-04
JP2015519751A (ja) 2015-07-09
JP6437590B2 (ja) 2018-12-12
US20170309605A1 (en) 2017-10-26
KR20150013780A (ko) 2015-02-05
WO2013172786A1 (en) 2013-11-21
CN104335340A (zh) 2015-02-04
KR102107575B1 (ko) 2020-05-08
SG11201407221TA (en) 2014-12-30
TW201405764A (zh) 2014-02-01
US9716081B2 (en) 2017-07-25
CN107845650B (zh) 2021-10-26
SG10201701879RA (en) 2017-04-27
KR20200049894A (ko) 2020-05-08
KR102208832B1 (ko) 2021-01-29
EP2850654A1 (en) 2015-03-25
US10903197B2 (en) 2021-01-26
US20150115413A1 (en) 2015-04-30
EP2850654B1 (en) 2016-10-26
JP2017199912A (ja) 2017-11-02
US9997506B2 (en) 2018-06-12
CN107845650A (zh) 2018-03-27

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