CN107819068A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN107819068A CN107819068A CN201710087126.0A CN201710087126A CN107819068A CN 107819068 A CN107819068 A CN 107819068A CN 201710087126 A CN201710087126 A CN 201710087126A CN 107819068 A CN107819068 A CN 107819068A
- Authority
- CN
- China
- Prior art keywords
- layer
- lanthanide oxide
- semiconductor device
- oxide layer
- magnetosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662394708P | 2016-09-14 | 2016-09-14 | |
US62/394708 | 2016-09-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107819068A true CN107819068A (zh) | 2018-03-20 |
CN107819068B CN107819068B (zh) | 2020-06-23 |
Family
ID=61560324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710087126.0A Active CN107819068B (zh) | 2016-09-14 | 2017-02-17 | 半导体装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20180076262A1 (zh) |
CN (1) | CN107819068B (zh) |
TW (2) | TWI688001B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110875422A (zh) * | 2018-08-31 | 2020-03-10 | 东芝存储器株式会社 | 磁存储装置 |
CN110890396A (zh) * | 2018-09-10 | 2020-03-17 | 东芝存储器株式会社 | 磁存储装置 |
CN111725388A (zh) * | 2019-03-18 | 2020-09-29 | 东芝存储器株式会社 | 磁性装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019014131A1 (en) * | 2017-07-10 | 2019-01-17 | Everspin Technologies, Inc. | STACK / MAGNETORESISTANCE STRUCTURE |
US11107980B2 (en) | 2018-09-28 | 2021-08-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM fabrication and device |
JP2020155460A (ja) | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 磁気記憶装置 |
JP2021144969A (ja) | 2020-03-10 | 2021-09-24 | キオクシア株式会社 | 磁気記憶装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5738938A (en) * | 1995-03-31 | 1998-04-14 | Mitsubishi Denki Kabushiki Kaisha | Magnetoelectric transducer |
US20010047930A1 (en) * | 2000-04-12 | 2001-12-06 | Alps Electric Co., Ltd. | Method of producing exchange coupling film and method of producing magnetoresistive sensor by using the exchange coupling film |
CN105684178A (zh) * | 2013-10-28 | 2016-06-15 | 索尼公司 | 基于自旋力矩转移的磁性随机存取储存器(stt-mram)和磁头 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0717435A1 (en) | 1994-12-01 | 1996-06-19 | AT&T Corp. | Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby |
US6891236B1 (en) | 1999-01-14 | 2005-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
JP4050446B2 (ja) | 2000-06-30 | 2008-02-20 | 株式会社東芝 | 固体磁気メモリ |
JP4149647B2 (ja) * | 2000-09-28 | 2008-09-10 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US6937446B2 (en) * | 2000-10-20 | 2005-08-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
JP4270797B2 (ja) | 2002-03-12 | 2009-06-03 | Tdk株式会社 | 磁気検出素子 |
JP2004179187A (ja) | 2002-11-22 | 2004-06-24 | Toshiba Corp | 磁気抵抗効果素子および磁気メモリ |
JP3983167B2 (ja) | 2002-12-26 | 2007-09-26 | 華邦電子股▲ふん▼有限公司 | 金属酸化膜半導体電界効果型トランジスターの製造方法 |
WO2004100182A1 (ja) * | 2003-05-07 | 2004-11-18 | International Superconductivity Technology Center, The Juridical Foundation | 希土類系酸化物超電導体及びその製造方法 |
JP4133687B2 (ja) * | 2003-08-27 | 2008-08-13 | 独立行政法人産業技術総合研究所 | トンネルジャンクション素子 |
JP4792714B2 (ja) | 2003-11-28 | 2011-10-12 | ソニー株式会社 | 記憶素子及び記憶装置 |
JP3976745B2 (ja) | 2004-03-08 | 2007-09-19 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
JP2006253451A (ja) * | 2005-03-11 | 2006-09-21 | Alps Electric Co Ltd | 磁気検出素子 |
KR100637689B1 (ko) | 2005-04-21 | 2006-10-24 | 주식회사 하이닉스반도체 | 고상에피택시 방식을 이용한 반도체소자의 콘택 형성 방법 |
EP1744328B1 (en) * | 2005-06-10 | 2012-07-25 | Nissan Motor Co., Ltd. | Rare earth magnet having high strength and high electrical resistance |
US7345855B2 (en) | 2005-09-07 | 2008-03-18 | International Business Machines Corporation | Tunnel barriers based on rare earth element oxides |
US20070096229A1 (en) * | 2005-10-28 | 2007-05-03 | Masatoshi Yoshikawa | Magnetoresistive element and magnetic memory device |
CN101443784B (zh) * | 2006-04-26 | 2013-03-06 | 阿瓦尔有限公司 | 指纹预检质量和分割 |
JP2009081315A (ja) | 2007-09-26 | 2009-04-16 | Toshiba Corp | 磁気抵抗素子及び磁気メモリ |
JP4649457B2 (ja) | 2007-09-26 | 2011-03-09 | 株式会社東芝 | 磁気抵抗素子及び磁気メモリ |
JP2010093157A (ja) | 2008-10-10 | 2010-04-22 | Fujitsu Ltd | 磁気抵抗効果素子、磁気再生ヘッド、磁気抵抗デバイスおよび情報記憶装置 |
JP2010205931A (ja) | 2009-03-03 | 2010-09-16 | Fujitsu Ltd | 磁気記憶デバイスの製造方法及び磁気記憶装置 |
JP2010251523A (ja) | 2009-04-15 | 2010-11-04 | Sumco Corp | 部分soiウェーハの製造方法 |
KR101115039B1 (ko) | 2009-08-21 | 2012-03-07 | 한국과학기술연구원 | 자기터널접합 디바이스 및 그 제조 방법 |
JP2014135449A (ja) | 2013-01-11 | 2014-07-24 | Toshiba Corp | 磁気抵抗効果素子およびその製造方法 |
US20150069554A1 (en) | 2013-09-06 | 2015-03-12 | Masahiko Nakayama | Magnetic memory and method of manufacturing the same |
CN106062945B (zh) | 2014-03-11 | 2019-07-26 | 东芝存储器株式会社 | 磁存储器和制造磁存储器的方法 |
KR101663958B1 (ko) | 2014-12-08 | 2016-10-12 | 삼성전자주식회사 | 자기 메모리 소자의 제조방법 |
-
2017
- 2017-02-03 TW TW106103614A patent/TWI688001B/zh active
- 2017-02-03 TW TW108101183A patent/TWI688131B/zh active
- 2017-02-17 CN CN201710087126.0A patent/CN107819068B/zh active Active
- 2017-02-28 US US15/445,829 patent/US20180076262A1/en not_active Abandoned
-
2018
- 2018-09-09 US US16/125,759 patent/US11201189B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5738938A (en) * | 1995-03-31 | 1998-04-14 | Mitsubishi Denki Kabushiki Kaisha | Magnetoelectric transducer |
US20010047930A1 (en) * | 2000-04-12 | 2001-12-06 | Alps Electric Co., Ltd. | Method of producing exchange coupling film and method of producing magnetoresistive sensor by using the exchange coupling film |
CN105684178A (zh) * | 2013-10-28 | 2016-06-15 | 索尼公司 | 基于自旋力矩转移的磁性随机存取储存器(stt-mram)和磁头 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110875422A (zh) * | 2018-08-31 | 2020-03-10 | 东芝存储器株式会社 | 磁存储装置 |
CN110875422B (zh) * | 2018-08-31 | 2023-12-19 | 铠侠股份有限公司 | 磁存储装置 |
CN110890396A (zh) * | 2018-09-10 | 2020-03-17 | 东芝存储器株式会社 | 磁存储装置 |
CN110890396B (zh) * | 2018-09-10 | 2023-10-31 | 铠侠股份有限公司 | 磁存储装置 |
CN111725388A (zh) * | 2019-03-18 | 2020-09-29 | 东芝存储器株式会社 | 磁性装置 |
Also Published As
Publication number | Publication date |
---|---|
US20180076262A1 (en) | 2018-03-15 |
TW201921745A (zh) | 2019-06-01 |
US11201189B2 (en) | 2021-12-14 |
TWI688131B (zh) | 2020-03-11 |
CN107819068B (zh) | 2020-06-23 |
TW201812915A (zh) | 2018-04-01 |
TWI688001B (zh) | 2020-03-11 |
US20190019841A1 (en) | 2019-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107819068A (zh) | 半导体装置及其制造方法 | |
US11527261B2 (en) | Storage element | |
KR101658394B1 (ko) | 자기터널접합 소자 및 그 제조방법과 자기터널접합 소자를 포함하는 전자소자 | |
US8743593B2 (en) | Magnetoresistance effect element and magnetic memory cell and magnetic random access memory using same | |
KR100829556B1 (ko) | 자기 저항 램 및 그의 제조방법 | |
US20130140658A1 (en) | Memory element and memory apparatus | |
JP5010565B2 (ja) | 磁気抵抗素子及び磁気メモリ | |
US8592928B2 (en) | Magnetic random access memory and method of manufacturing the same | |
CN108701758A (zh) | 磁阻元件和电子设备 | |
CN111226324B (zh) | 隧道磁阻效应元件、磁存储器、内置型存储器及制作隧道磁阻效应元件的方法 | |
TWI676168B (zh) | 磁性裝置及其製造方法 | |
KR20100131967A (ko) | 강자성 터널 접합 소자 및 강자성 터널 접합 소자의 구동 방법 | |
US20160172585A1 (en) | An improved method to make of fabricating ic/mram using oxygen ion implantation | |
US20220336728A1 (en) | Method of making bar-type magnetoresistive device | |
KR102274831B1 (ko) | 전기장 제어 마그네틱램 | |
JP5824907B2 (ja) | 磁気抵抗素子及び磁気記憶装置 | |
US10170518B2 (en) | Self-assembled pattern process for fabricating magnetic junctions usable in spin transfer torque applications | |
JP2012064611A (ja) | 記憶素子、メモリ装置 | |
US10069062B2 (en) | Magnetoresistive element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220111 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right |