CN107710402A - 带有导电夹具且夹具偏移小的半导体管芯安装用引线框架 - Google Patents

带有导电夹具且夹具偏移小的半导体管芯安装用引线框架 Download PDF

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Publication number
CN107710402A
CN107710402A CN201680034006.8A CN201680034006A CN107710402A CN 107710402 A CN107710402 A CN 107710402A CN 201680034006 A CN201680034006 A CN 201680034006A CN 107710402 A CN107710402 A CN 107710402A
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China
Prior art keywords
lead terminal
semiconductor
conductive member
semiconductor element
groove
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CN201680034006.8A
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English (en)
Inventor
丁慧英
王鹏年
于涛
刘俊锋
白俊凯
彭智平
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Weishi General Semiconductor LLC
Vishay General Semiconductor LLC
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Weishi General Semiconductor LLC
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Publication of CN107710402A publication Critical patent/CN107710402A/zh
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Abstract

一种半导体组件包括具有下部和上部电触点的半导体管芯。具有下部管芯焊盘的引线框架与管芯的下部电触点电连接和机械连接。上部导电构件具有与管芯的上部电触点电连接和机械连接的第一部分。引线端子具有与导电构件的第二部分电连接和机械连接的表面部分。引线端子的表面部分和/或导电部件的第二部分具有设置在其中的一系列凹槽。封装材料封装半导体管芯、引线框架的至少一部分、上部导电构件的至少一部分以及引线端子的至少一部分。

Description

带有导电夹具且夹具偏移小的半导体管芯安装用引线框架
背景技术
电子工业的快速成长产生了对尺寸较小而又以大功率架构进行操作来支持多个性能/功能的电子器件的需求。大功率器件通常支持高电流并且产生很高的功率，这就要求器件具有高效的散热能力。典型的双端子表面安装分立功率半导体器件由引线框架和夹具构成，引线框架安装在半导体管芯或芯片的阴极/底侧，夹具与半导体管芯的阳极/顶侧相连。制造商们已经开始为大功率器件使用导电夹具来代替金线或铝线，用来将管芯顶部上的金属薄层连接到引线框架的引线上。
用于将导电夹具附接到器件的部件上的夹具附接过程通常包括从夹具卷轴上切割出夹具、从夹具卷轴上取下夹具，和将夹具附接到管芯表面。然而，使用导电夹具会带来夹具移动的问题，这一问题增加了制造半导体封装的难度和成本，并且降低了组装中的每小时产出("UPH")速度。
发明内容
按照本文公开的主题的一个方面，一种半导体组件包括具有下部和上部电触点的半导体管芯。具有下部管芯焊盘的引线框架与管芯的下部电触点电连接和机械连接。上部导电构件具有与管芯的上部电触点电连接和机械连接的第一部分。引线端子具有与导电构件的第二部分电和机械连接的表面部分。引线端子的表面部分和/或导电部件的第二部分具有设置在其中的一系列凹槽。封装材料封装半导体管芯、引线框架的至少一部分、上部导电构件的至少一部分以及引线端子的至少一部分。
按照本文公开的主题的另一个方面，提供了一种形成半导体组件的方法。按照该方法，导电粘合剂被施加到引线框架的管芯焊盘上。将半导体管芯定位在管芯焊盘上，使得半导体管芯的下部电极与导电粘合剂接触。导电粘合剂被施加到半导体管芯的上部电极上。在引线端子的表面部分中形成凹槽的图案。导电粘合剂被施加到其中形成了凹槽的引线端子的表面部分上。定位导电构件，使得其近端部分与半导体管芯的上部电极上的导电粘合剂接触，并且其远端部分与引线端子的形成有凹槽的表面部分上的导电粘合剂接触。加热以使半导体管芯的上部电极、引线端子的表面部分和管芯焊盘上的导电粘合剂回流。将半导体芯片、引线框架的至少一部分、上部导电构件的至少一部分以及引线端子的至少一部分封装在封装材料中。
附图说明
图1是半导体芯片封装的一个例子的截面图。
图2a示出了在导电构件被放置就位之前的芯片子组件的平面图，图2b表示在导电构件已经被放置就位并且焊剂已经经历回流之后的芯片子组件。
图3示出了在导电构件被放置就位之前的芯片子组件的平面图，其中在引线端子的表面中形成一系列平行凹槽以增强焊剂回流后的结合强度并减小夹具偏移。
图4示出了在导电构件被放置就位之前的另一个芯片子组件的平面图，其中在引线端子的表面中形成了凹槽的网格图案，以增强焊剂回流后的结合强度并减小夹具偏移。
图5是表示形成具有用于提供电连接的夹具的半导体封装组件的方法的一个实例的流程图。
具体实施方式
提供了这样一种半导体封装组件：包括半导体管芯和导电夹具，并且提供适用于大功率应用的组件。夹具接合用于许多半导体封装组装中，包括例如表面安装封装、功率封装和桥式整流器封装。在一个实施例中，组装过程总体上包括在其上安装有半导体管芯的管芯焊盘之间形成第一接头和在半导体管芯和夹具的导电构件之间形成第二接头。在共同形成夹具的导电构件和引线端子之间形成第三接头。形成第三接头的导电构件的表面和/或引线端子的表面具有形成在其中的凹槽，这增强了接头的强度并且减小了夹具在随后的焊剂回流处理期间的移动。
下面的介绍给出了用来透彻理解半导体组件的半导体组件形成工艺的实施例的具体细节。不过，本领域技术人员都明白，本文介绍的组件和工艺可以在没有这些细节的情况下得以实现。在其它情况下，没有详细展示或介绍公知的结构和功能，以避免不必要地混淆本文介绍的实施例的说明。
在图1的截面图中示意性地示出了半导体芯片封装100的一个例子。如图所示，管芯或芯片110位于引线框架120的管芯焊盘115上。举例来说，管芯110可以是二端子器件，比如二极管、瞬态电压抑制器或LED。使用焊剂140将管芯110焊接到管芯焊盘115的表面上，以便在管芯焊盘115和管芯110下表面上的电极之间建立电接触。类似地，使用焊剂145将管芯110焊接到靠近管芯110的导电构件125的端部的表面上。焊剂145建立导电构件125与管芯110上表面上的电极之间的电接触。管芯110的电极由金属或其他导电材料的暴露区域形成，所述金属或其他导电材料的暴露区域与管芯110内的对应半导体器件结构电接触。
管芯焊盘115和导电构件125可以由诸如铜(Cu)、铝(Al)、镍、钛(Ti)或基于这些金属的合金之类的任何适当的导电材料形成。
导电构件125远离管芯110的一端具有接触表面130，该接触表面130与引线端子135的上表面155电接触。焊剂150用于建立接触表面130与引线端子135的上表面155之间的接触。导电构件125和引线端子135形成导电夹具。
围绕半导体器件的零部件形成封装外壳170。特别地，管芯110、管芯焊盘115、导电构件125、焊剂140,145和150以及引线框架120和引线端子135的一部分被封装或包裹在环氧树脂或适合于该器件的其他适当的化合物中。
在封装组装过程中，夹具是通过在管芯110的上表面和引线端子135的上表面上都放置焊剂来形成的。导电构件115被放置在焊剂上方，并且在管芯110和引线端子135之间起到了桥梁的作用。在正确定位之后，将组件在炉中加热以使焊剂回流，从而在冷却之后将导电构件125固定就位。
在组装过程期间有时会出现的一个问题是导电构件125的位置在回流之后会从其所放置的指定位置发生偏移。这个问题将参照图2a和2b来说明。图2a示出了导电构件被放置就位之前芯片子组件的平面图。如图所示，焊剂膏180已经被同时施加到管芯110的上表面和引线端子135的上表面两者上。图2b示出了在导电构件125已经被放置就位并且焊剂已经经历了回流之后的芯片子组件。在这种情况下，导电构件125沿着x方向(即，沿着图1中所示的连接点A和B的直线的方向)从其回流之前的位置偏移了距离d。
如上所述的夹具偏移可能导致各种质量问题，这些质量问题可能造成器件性能恶化，包括可能的器件失效。例如，可能会出现诸如器件短路或大电流泄漏之类的问题。
不受理论的束缚，夹具偏移可能是由图1中的点A和B处形成的接头之间的连接强度的不平衡导致的。具体地，点A处的近端接头由导电构件125、焊剂145和管芯110形成，并且假设导电构件125由铜形成，则近端接头是由铜层、焊剂层和芯片金属(例如Au)组成的。另一方面，点B处的远端接头由导电构件125、焊剂和引线端子135形成，并且假定引线端子135也由铜形成，则远端接头是由铜层、焊剂层和铜层组成的。形成两个接头的材料不同会导致接头强度的不同。
在传统的芯片组装过程中，有时会通过调整加工条件来控制夹具偏移。例如，调整所使用的焊剂膏的量和焊剂回流温度特性，可以减小芯片偏移。不过，在其他问题中，这些技术可能会随着时间的推移而前后不一致，从而导致封装与封装之间的结构差异。
不再是调整加工条件，本文介绍的工艺采用形成在形成了远端接头的导电构件125和/或引线端子135的表面上的凹槽。这些凹槽可以具有多种不同轮廓中的任何一种轮廓，例如V形或U形。另外，这些凹槽可以以不同的方式被图案化，并且可以例如形成平行线的图案、水平和垂直线的网格、包含平行线的菱形图案、不规则或非周期图案等等。这样的凹槽可以有效地控制夹具框架的偏移，使得导电构件125保持在它原本放置的位置上。
类似于图2a，图3示出了在导电构件被放置就位之前的芯片子组件的平面图。在这种情况下，在形成远端接头B的引线端子135的表面上形成了限定出平行线图案的凹槽165。图4示出了在导电构件被放置就位之前芯片子组件的另一个平面图，其中凹槽165限定出了网格图案。
已经在各种不同的封装组件应用中证实了使用上述凹槽可以实现的夹具偏移的减小。例如，在形成多个半导体芯片封装的一个工序中，发现在不使用凹槽表面的情况下，将导电构件放置在管芯上的时刻与回流完成之后的时刻之间发生的导电构件的偏移的范围在约2.52密耳和7.81密耳之间。不过，当在导电构件的表面上形成了平行凹槽的图案时，偏移减小到约-1.19密耳和4.21密耳之间。类似地，当采用网格图案的凹槽时，偏移减小到大约-1.41密耳和3.30密耳之间。
图5是表示形成具有用于提供电连接的夹具的半导体封装组件的方法的一个实例的流程图。该组装过程包括形成引线框架和形成夹具结构，形成夹具结构包括在要与导电构件电连接和机械连接的引线端子的表面上形成凹槽，该导电构件继而电连接和机械连接到半导体管芯上的电极上。
在方框405处，将焊剂施加到引线框架120的管芯焊盘115的一个或多个部分。在方框410处，将半导体管芯110的第一表面安装在焊剂表面上。该第一表面可以是管芯的底部表面，但是在其他实施例中并不局限于此。依照器件的具体情况，底部表面可以是管芯的正极或负极中的任一个。接下来，在方框415处，将焊剂施加到管芯110的第二表面。该第二表面可以是管芯的顶部表面，但是在其他实施例中并不局限于此。依照器件的具体情况，顶部表面可以是管芯的正极或负极中的任一个。此外，在方框420处，将焊剂施加到引线端子135的开槽的顶部表面。将导电构件125安装在管芯110和引线端子135上的焊剂表面上。导电构件125可以使用任何合适的手段被适当地定位或对准在管芯和引线端子上。在方框425处，对所得到的组件进行加热，以使焊剂经历回流。尽管前面介绍的半导体组装工艺使用焊剂将管芯连接到器件的其他部件上，但是依照器件的具体情况，其他替代实施例可以使用其他导电粘合化合物来将管芯连接到器件的其他部件上。
最后，在方框430处，围绕半导体器件的零部件形成封装外壳。形成外壳包括将导电管芯110、管芯焊盘115、导电构件125和引线端子135的包括远端接头B的部分封装或包裹在环氧树脂或依照器件的具体情况而选择的其他适当的化合物中并且使用依照器件的具体情况而选择的工艺。
将理解的是，为了便于描述，本文可能使用诸如"在...上方"、"在...之上"、"在...之下"，"在...下方"，"比....低"之类的空间相对术语来描述如图中所示的一个元件或特征与另一个(多个)元件或(多个)特征的关系。应该理解的是，空间相对术语旨在包含除了附图中描绘的方位之外的器件在使用或操作中的不同方位。例如，如果附图中的器件被翻转，则被描述为在其他元件或特征"下方"或"之下"的元件将被定向为在其他元件或特征"上方"。因此，示例性术语"上方"可以包含上方和下方两种取向。

Claims (21)

1.一种半导体组件，包括：
半导体管芯，包括下部和上部电触点；
引线框架，具有与管芯的下部电触点电连接和机械连接的下部管芯焊盘；
上部导电构件，具有与管芯的上部电触点电连接和机械连接的第一部分；
引线端子，具有与导电构件的第二部分电连接和机械连接的表面部分，引线端子的表面部分和/或导电构件的第二部分具有设置在其中的一系列凹槽；和
封装材料，封装半导体管芯、引线框架的至少一部分、上部导电构件的至少一部分以及引线端子的至少一部分。
2.根据权利要求1所述的半导体组件，其特征在于，所述一系列凹槽设置在所述引线端子的表面部分中。
3.根据权利要求1所述的半导体组件，其特征在于，所述一系列凹槽设置在所述导电构件的第二部分中。
4.根据权利要求1所述的半导体组件，其特征在于，所述凹槽具有V形轮廓。
5.根据权利要求1所述的半导体组件，其特征在于，所述一系列凹槽限定出平行线的图案。
6.根据权利要求1所述的半导体组件，其特征在于，所述一系列凹槽限定出网格图案。
7.根据权利要求1所述的半导体组件，其特征在于，还包括将所述引线端子的表面部分电连接和机械连接到所述导电构件的第二部分的第一导电粘合化合物。
8.根据权利要求7所述的半导体组件，其特征在于，还包括将所述导电构件的第一部分电连接和机械连接到所述管芯的上部电触点的第二导电粘合化合物。
9.根据权利要求8所述的半导体组件，其特征在于，第一和第二导电粘合化合物包括焊剂。
10.根据权利要求1所述的半导体组件，其特征在于，所述半导体管芯是二极管。
11.根据权利要求1所述的半导体组件，其特征在于，所述半导体管芯是瞬态电压抑制器。
12.根据权利要求1所述的半导体组件，其特征在于，所述半导体管芯是LED。
13.一种形成半导体组件的方法，包括∶
将焊剂施加到一引线框架的一管芯焊盘上；
将一半导体管芯定位在所述管芯焊盘上，使得所述半导体管芯的下部电极与焊剂接触；
将焊剂施加到半导体管芯的上部电极；
在一引线端子的一表面部分中形成凹槽的图案；
将焊剂施加到其中形成了凹槽的引线端子的表面部分；
定位导电构件，使得其近端部分与半导体管芯的上部电极上的焊剂接触，并且其远端部分与形成了凹槽的引线端子的表面部分上的焊剂接触；
加热以使半导体管芯的上部电极、引线端子的表面部分和管芯焊盘上的焊剂回流；和
将半导体芯片、引线框架的至少一部分、上部导电构件的至少一部分以及引线端子的至少一部分封装在封装材料中。
14.根据权利要求13所述的方法，其特征在于，一系列凹槽形成在所述引线端子的表面部分中。
15.根据权利要求13所述的方法，其特征在于，一系列凹槽形成在所述导电构件的第二部分中。
16.根据权利要求13所述的方法，其特征在于，所述凹槽具有V形轮廓。
17.根据权利要求13所述的方法，其特征在于，一系列凹槽限定出平行线的图案。
18.根据权利要求13所述的方法，其特征在于，一系列凹槽限定出网格图案。
19.一种形成半导体组件的方法，包括∶
将导电粘合剂施加到一引线框架的一管芯焊盘上；
将一半导体管芯定位在所述管芯焊盘上，使得所述半导体管芯的下部电极与导电粘合剂接触；
将导电粘合剂施加到半导体管芯的上部电极；
在一引线端子的一表面部分中形成凹槽的图案；
将导电粘合剂施加到其中形成了凹槽的引线端子的表面部分；
定位导电构件，使得其近端部分与半导体管芯的上部电极上的导电粘合剂接触，并且其远端部分与形成了凹槽的引线端子的表面部分上的导电粘合剂接触；
加热以使半导体管芯的上部电极、引线端子的表面部分和管芯焊盘上的导电粘合剂回流；和
将半导体芯片、引线框架的至少一部分、上部导电构件的至少一部分以及引线端子的至少一部分封装在封装材料中。
20.根据权利要求19所述的方法，其特征在于，凹槽的图案包括一系列平行凹槽。
21.根据权利要求19所述的方法，其特征在于，凹槽的图案包括网格图案。
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