CN107665957B - 显示装置的制造方法 - Google Patents

显示装置的制造方法 Download PDF

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Publication number
CN107665957B
CN107665957B CN201710391404.1A CN201710391404A CN107665957B CN 107665957 B CN107665957 B CN 107665957B CN 201710391404 A CN201710391404 A CN 201710391404A CN 107665957 B CN107665957 B CN 107665957B
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CN
China
Prior art keywords
insulating film
area
display device
film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710391404.1A
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English (en)
Chinese (zh)
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CN107665957A (zh
Inventor
松泽兴明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Magno Haote Co ltd
Original Assignee
Japan Display Central Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Central Inc filed Critical Japan Display Central Inc
Publication of CN107665957A publication Critical patent/CN107665957A/zh
Application granted granted Critical
Publication of CN107665957B publication Critical patent/CN107665957B/zh
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
CN201710391404.1A 2016-07-28 2017-05-27 显示装置的制造方法 Active CN107665957B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-148487 2016-07-28
JP2016148487A JP6717700B2 (ja) 2016-07-28 2016-07-28 表示装置の製造方法

Publications (2)

Publication Number Publication Date
CN107665957A CN107665957A (zh) 2018-02-06
CN107665957B true CN107665957B (zh) 2019-07-09

Family

ID=61010625

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710391404.1A Active CN107665957B (zh) 2016-07-28 2017-05-27 显示装置的制造方法

Country Status (5)

Country Link
US (1) US9941491B2 (enExample)
JP (1) JP6717700B2 (enExample)
KR (1) KR101908230B1 (enExample)
CN (1) CN107665957B (enExample)
TW (1) TWI659527B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019167270A1 (ja) * 2018-03-02 2019-09-06 シャープ株式会社 表示装置及びその製造方法
US20220181582A1 (en) * 2019-03-28 2022-06-09 Sharp Kabushiki Kaisha Display device, and method for manufacturing display device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985740A (en) * 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
US6465287B1 (en) * 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6312979B1 (en) * 1998-04-28 2001-11-06 Lg.Philips Lcd Co., Ltd. Method of crystallizing an amorphous silicon layer
US7109653B2 (en) 2002-01-15 2006-09-19 Seiko Epson Corporation Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element
JP4656916B2 (ja) * 2003-11-14 2011-03-23 株式会社半導体エネルギー研究所 発光装置の作製方法
US7612498B2 (en) * 2003-11-27 2009-11-03 Toshiba Matsushita Display Technology Co., Ltd. Display element, optical device, and optical device manufacturing method
US7732334B2 (en) * 2004-08-23 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5025107B2 (ja) * 2004-08-23 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4865999B2 (ja) * 2004-11-19 2012-02-01 株式会社日立製作所 電界効果トランジスタの作製方法
TWI396464B (zh) * 2007-01-22 2013-05-11 Innolux Corp 有機電致發光顯示裝置及其製作方法
JP2009196318A (ja) * 2008-02-25 2009-09-03 Fujifilm Corp 積層体とバリア性フィルム基板の製造方法、バリア材料、デバイスおよび光学部材
JP5424738B2 (ja) * 2009-06-23 2014-02-26 キヤノン株式会社 表示装置
JP2011018686A (ja) * 2009-07-07 2011-01-27 Hitachi Displays Ltd 有機ｅｌ表示装置
JP2011210544A (ja) * 2010-03-30 2011-10-20 Canon Inc 有機発光装置及びその製造方法
JP3195992U (ja) * 2011-06-17 2015-02-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｏｌｅｄ処理のためのｃｖｄマスクアライメント
JP5971679B2 (ja) * 2011-11-21 2016-08-17 株式会社ジャパンディスプレイ 液晶表示装置
KR101948173B1 (ko) * 2012-11-29 2019-02-14 엘지디스플레이 주식회사 유기전계발광 표시소자
CN105514298B (zh) * 2015-12-31 2018-12-18 固安翌光科技有限公司 一种薄膜封装结构及薄膜封装方法

Also Published As

Publication number Publication date
CN107665957A (zh) 2018-02-06
US9941491B2 (en) 2018-04-10
JP2018018702A (ja) 2018-02-01
JP6717700B2 (ja) 2020-07-01
US20180034008A1 (en) 2018-02-01
TW201816997A (zh) 2018-05-01
KR101908230B1 (ko) 2018-10-15
KR20180013698A (ko) 2018-02-07
TWI659527B (zh) 2019-05-11

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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
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TR01 Transfer of patent right

Effective date of registration: 20250724

Address after: Tokyo, Japan

Patentee after: Magno Haote Co.,Ltd.

Country or region after: Japan

Address before: Tokyo, Japan

Patentee before: JAPAN DISPLAY Inc.

Country or region before: Japan