CN107615493B - 具有减小的寄生电容的绝缘体器件 - Google Patents

具有减小的寄生电容的绝缘体器件 Download PDF

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Publication number
CN107615493B
CN107615493B CN201680031278.2A CN201680031278A CN107615493B CN 107615493 B CN107615493 B CN 107615493B CN 201680031278 A CN201680031278 A CN 201680031278A CN 107615493 B CN107615493 B CN 107615493B
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substrate
buried
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forming
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CN107615493A (zh
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R·塞尔瓦拉
A·S·克马斯
B·L·威廉姆斯
T·D·博尼费尔德
J·K·艾瑞诗
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Near-Field Transmission Systems (AREA)
CN201680031278.2A 2015-04-07 2016-04-07 具有减小的寄生电容的绝缘体器件 Active CN107615493B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/680,211 US9806148B2 (en) 2015-04-07 2015-04-07 Device isolator with reduced parasitic capacitance
US14/680,211 2015-04-07
PCT/US2016/026447 WO2016164587A1 (en) 2015-04-07 2016-04-07 Device isolator with reduced parasitic capacitance

Publications (2)

Publication Number Publication Date
CN107615493A CN107615493A (zh) 2018-01-19
CN107615493B true CN107615493B (zh) 2021-08-13

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CN201680031278.2A Active CN107615493B (zh) 2015-04-07 2016-04-07 具有减小的寄生电容的绝缘体器件

Country Status (4)

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US (4) US9806148B2 (https=)
JP (2) JP6940913B2 (https=)
CN (1) CN107615493B (https=)
WO (1) WO2016164587A1 (https=)

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US10447202B2 (en) 2017-02-08 2019-10-15 Texas Instruments Incorporated Apparatus for communication across a capacitively coupled channel
CN108281365A (zh) * 2018-01-24 2018-07-13 德淮半导体有限公司 用于晶圆可接受性测试的焊盘及其制造方法
US20190279945A1 (en) * 2018-03-06 2019-09-12 Texas Instruments Incorporated Electronic circuit with guard features for reliability in humid environments
US11049820B2 (en) * 2018-07-30 2021-06-29 Texas Instruments Incorporated Crack suppression structure for HV isolation component
DE112019002216T5 (de) 2019-03-08 2021-02-18 Rohm Co., Ltd. Elektronikkomponente
US11342288B2 (en) 2019-06-04 2022-05-24 Allegro Microsystems, Llc Signal isolator having at least one isolation island
US11881449B2 (en) 2019-07-19 2024-01-23 Texas Instruments Incorporated High performance high voltage isolators
KR102331471B1 (ko) * 2019-08-23 2021-11-26 (주)아트로닉스 고전력 반도체 소자 및 그의 제조 방법
US11515246B2 (en) 2020-10-09 2022-11-29 Allegro Microsystems, Llc Dual circuit digital isolator
US11476189B2 (en) 2020-12-12 2022-10-18 Texas Instruments Incorporated Resonant inductive-capacitive isolated data channel
WO2022210551A1 (ja) * 2021-03-29 2022-10-06 ローム株式会社 アイソレータ、絶縁モジュールおよびゲートドライバ
US20230047044A1 (en) * 2021-08-16 2023-02-16 Texas Instruments Incorporated Galvanic high voltage isolation capability enhancement on reinforced isolation technologies
KR102629767B1 (ko) 2021-09-08 2024-01-29 에스케이키파운드리 주식회사 디지털 아이솔레이터용 커패시터 구조를 포함하는 반도체 소자 및 그 제조 방법
CN115206764B (zh) * 2022-07-21 2025-09-16 北京北方华创微电子装备有限公司 线圈装置及半导体工艺腔室
CN116259613A (zh) * 2022-12-27 2023-06-13 荣湃半导体（上海）有限公司 一种电容隔离器、半导体器件

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Also Published As

Publication number Publication date
US20180026095A1 (en) 2018-01-25
US20210367030A1 (en) 2021-11-25
JP2018517283A (ja) 2018-06-28
JP7311941B2 (ja) 2023-07-20
JP6940913B2 (ja) 2021-09-29
CN107615493A (zh) 2018-01-19
US20190148486A1 (en) 2019-05-16
US20160300907A1 (en) 2016-10-13
US11869933B2 (en) 2024-01-09
WO2016164587A1 (en) 2016-10-13
US9806148B2 (en) 2017-10-31
US10186576B2 (en) 2019-01-22
US11107883B2 (en) 2021-08-31
JP2021192444A (ja) 2021-12-16

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