CN107438893B - 借助印刷技术制作含有肖特基二极管器件的方法 - Google Patents

借助印刷技术制作含有肖特基二极管器件的方法 Download PDF

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CN107438893B
CN107438893B CN201680014452.2A CN201680014452A CN107438893B CN 107438893 B CN107438893 B CN 107438893B CN 201680014452 A CN201680014452 A CN 201680014452A CN 107438893 B CN107438893 B CN 107438893B
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electrode
semiconductor
micro
base
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CN107438893A (zh
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尼尔斯·贝森
罗兰·斯切尔
马克·霍夫曼
托马斯·卡西尔
丹尼尔·尔尼
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Universitaet Duisburg Essen
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    • H01L21/02104Forming layers
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    • H01L21/02518Deposited layers
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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CN201680014452.2A 2015-03-23 2016-03-23 借助印刷技术制作含有肖特基二极管器件的方法 Active CN107438893B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015205230.3A DE102015205230B4 (de) 2015-03-23 2015-03-23 Verfahren zur Herstellung von Bauelementen aufweisend eine Schottky-Diode mittels Drucktechnik und Bauelement
DEDE102015205230.3 2015-03-23
PCT/EP2016/056315 WO2016150988A1 (de) 2015-03-23 2016-03-23 Verfahren zur herstellung von bauelementen aufweisend eine schottky-diode mittels drucktechnik

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CN107438893B true CN107438893B (zh) 2020-11-27

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US (1) US10411142B2 (pt-PT)
EP (1) EP3275010A1 (pt-PT)
CN (1) CN107438893B (pt-PT)
DE (1) DE102015205230B4 (pt-PT)
WO (1) WO2016150988A1 (pt-PT)

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CN101828266A (zh) * 2007-09-04 2010-09-08 英诺瓦莱特公司 Ⅳ族纳米颗粒结以及由其构成的设备
CN102067324A (zh) * 2007-08-28 2011-05-18 加利福尼亚技术学院 聚合物嵌入式半导体棒阵列
CN101465383B (zh) * 2008-12-30 2011-08-03 中国科学院上海微系统与信息技术研究所 电阻转换存储器的制造方法
CN102903849A (zh) * 2011-07-29 2013-01-30 清华大学 肖特基二极管及其制备方法

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JP4293586B2 (ja) * 2002-08-30 2009-07-08 浜松ホトニクス株式会社 ナノ粒子の製造方法及び製造装置
US20070128905A1 (en) * 2003-06-12 2007-06-07 Stuart Speakman Transparent conducting structures and methods of production thereof
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US8624108B1 (en) * 2006-11-01 2014-01-07 Banpil Photonics, Inc. Photovoltaic cells based on nano or micro-scale structures
JP2008127214A (ja) * 2006-11-16 2008-06-05 Honda Motor Co Ltd 炭化ケイ素ナノ構造体およびその製造方法
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WO2011078780A1 (en) * 2009-12-22 2011-06-30 Qunano Ab Method for manufacturing a nanowire structure
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CN1855552A (zh) * 2005-03-16 2006-11-01 通用电气公司 高效的无机纳米杆增强的光电装置
CN1979816A (zh) * 2005-12-07 2007-06-13 高菲欧股份有限公司 二极管电路及其箝位电路、二极管制造方法及其限压方法
CN102067324A (zh) * 2007-08-28 2011-05-18 加利福尼亚技术学院 聚合物嵌入式半导体棒阵列
CN101828266A (zh) * 2007-09-04 2010-09-08 英诺瓦莱特公司 Ⅳ族纳米颗粒结以及由其构成的设备
CN101465383B (zh) * 2008-12-30 2011-08-03 中国科学院上海微系统与信息技术研究所 电阻转换存储器的制造方法
CN102903849A (zh) * 2011-07-29 2013-01-30 清华大学 肖特基二极管及其制备方法

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DE102015205230B4 (de) 2023-01-19
US10411142B2 (en) 2019-09-10
DE102015205230A1 (de) 2016-09-29
EP3275010A1 (de) 2018-01-31
CN107438893A (zh) 2017-12-05
WO2016150988A1 (de) 2016-09-29
US20180114867A1 (en) 2018-04-26

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