CN101828266A - Ⅳ族纳米颗粒结以及由其构成的设备 - Google Patents
Ⅳ族纳米颗粒结以及由其构成的设备 Download PDFInfo
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- CN101828266A CN101828266A CN200880110980A CN200880110980A CN101828266A CN 101828266 A CN101828266 A CN 101828266A CN 200880110980 A CN200880110980 A CN 200880110980A CN 200880110980 A CN200880110980 A CN 200880110980A CN 101828266 A CN101828266 A CN 101828266A
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
Description
Claims (43)
Applications Claiming Priority (5)
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US12/029,838 | 2008-02-12 | ||
US12/029,838 US20100275982A1 (en) | 2007-09-04 | 2008-02-12 | Group iv nanoparticle junctions and devices therefrom |
PCT/US2008/057702 WO2009032359A2 (en) | 2007-09-04 | 2008-03-20 | Group iv nanoparticle junctions and devices therefrom |
Publications (2)
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CN101828266A true CN101828266A (zh) | 2010-09-08 |
CN101828266B CN101828266B (zh) | 2012-11-28 |
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CN2008801109803A Active CN101828266B (zh) | 2007-09-04 | 2008-03-20 | Ⅳ族纳米颗粒结以及由其构成的设备 |
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US (2) | US20100275982A1 (zh) |
EP (2) | EP2530725A2 (zh) |
JP (1) | JP5543350B2 (zh) |
KR (1) | KR20100075467A (zh) |
CN (1) | CN101828266B (zh) |
WO (1) | WO2009032359A2 (zh) |
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2008
- 2008-02-12 US US12/029,838 patent/US20100275982A1/en not_active Abandoned
- 2008-03-20 CN CN2008801109803A patent/CN101828266B/zh active Active
- 2008-03-20 EP EP12178526A patent/EP2530725A2/en not_active Withdrawn
- 2008-03-20 JP JP2010524064A patent/JP5543350B2/ja not_active Expired - Fee Related
- 2008-03-20 WO PCT/US2008/057702 patent/WO2009032359A2/en active Application Filing
- 2008-03-20 KR KR1020107006981A patent/KR20100075467A/ko not_active Application Discontinuation
- 2008-03-20 EP EP08769026.9A patent/EP2191513B1/en not_active Not-in-force
-
2011
- 2011-09-22 US US13/239,806 patent/US20120009721A1/en not_active Abandoned
Cited By (8)
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CN102169909A (zh) * | 2011-03-04 | 2011-08-31 | 中山大学 | 一种具有低串联电阻的晶体硅太阳电池及其制备方法 |
CN102254960A (zh) * | 2011-07-18 | 2011-11-23 | 中国科学院宁波材料技术与工程研究所 | 一种晶体硅太阳能电池p型硅表面的钝化层及其制备方法 |
CN104170246A (zh) * | 2011-09-26 | 2014-11-26 | 第一太阳能有限公司 | 估算太阳能装置的短路电流的系统及方法 |
CN107438893A (zh) * | 2015-03-23 | 2017-12-05 | 杜伊斯堡-埃森大学 | 借助印刷技术制作含有肖特基二极管器件的方法 |
CN107438893B (zh) * | 2015-03-23 | 2020-11-27 | 杜伊斯堡-埃森大学 | 借助印刷技术制作含有肖特基二极管器件的方法 |
CN108597974A (zh) * | 2018-05-11 | 2018-09-28 | 苏州大学 | 一种基于n型单晶Si的高效光阴极的设计方法 |
CN108597974B (zh) * | 2018-05-11 | 2020-04-17 | 苏州大学 | 一种基于n型单晶Si的高效光阴极的设计方法 |
CN108735829A (zh) * | 2018-07-12 | 2018-11-02 | 浙江爱旭太阳能科技有限公司 | 能够提升背面光电转换效率的p型perc双面太阳能电池及其制备方法 |
Also Published As
Publication number | Publication date |
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US20100275982A1 (en) | 2010-11-04 |
WO2009032359A3 (en) | 2010-03-11 |
EP2191513B1 (en) | 2015-12-23 |
EP2191513A2 (en) | 2010-06-02 |
CN101828266B (zh) | 2012-11-28 |
KR20100075467A (ko) | 2010-07-02 |
JP5543350B2 (ja) | 2014-07-09 |
US20120009721A1 (en) | 2012-01-12 |
JP2011505679A (ja) | 2011-02-24 |
WO2009032359A2 (en) | 2009-03-12 |
EP2530725A2 (en) | 2012-12-05 |
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