CN107438893A - 借助印刷技术制作含有肖特基二极管器件的方法 - Google Patents
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Abstract
本发明涉及一种借助印刷技术制作含有肖特基二极管器件的方法。该方法涉及:将半导体‑纳米颗粒粉体(HND)应用和沉积(100)在第一电极(E1)上的步骤,第一电极(E1)设置在衬底(S)上;所述沉积半导体‑纳米颗粒粉体(HND)经激光(L)照射(200)以形成具有底部和圆弧尖端的圆锥体(C1、C2),其中,圆锥体的底部结合至第一电极(E1);将形成的微圆锥体(C1、C2)嵌入(300)在电绝缘聚合物基体(P)中;以及施加(500)第二电极(E2)使圆锥体(C1、C2)的尖端结合至第二电极(E2)。
Description
技术领域
本发明涉及一种借助印刷技术制作含有肖特基二极管器件的方法。
背景技术
对于许多电子应用,易于生产的电路是令人期望的。生产成本至关重要。
用于制造这种电路的现有技术已经使得能够生产许多不同的结构。
因此,例如,能够在薄膜有机和无机大面积电子(TOLAE)技术的帮助下生产电路,但这些结构就其高频性能而言通常不足,因而通常不能在高频下进行使用。例如,这是由于需要使工艺温度保持相对较低,例如,以便获得机械上衬底,并且因此与具有高结晶度的经典半导体衬底或者材料相比,该半导体薄膜的结构/电子质量较差。
尤其,迄今为止,具有与典型二极管特性相对应的超过20 MHz的高频性能的薄膜肖特基二极管的合算生产仍极其困难。
发明内容
鉴于上述情况,本发明为解决上述问题而提供一种制作具有肖特基二极管器件的方法,其使得能够按照合算方式制作具有对应高频性能的器件。
该问题是由根据权利要求1的方法来解决。其它有利实施例具体地是从属权利要求的主题。此外,该问题也是由根据权利要求3的器件来解决,该器件是由所述方法所制作的。
附图说明
下面将参照附图对本发明进行解释:
图1示出了根据本发明的实施例的样本器件的示意截面图;
图2示出了与图1的示意截面图相对应的一种可实现的等效电路;
图3示出了与根据本发明的实施例的微圆锥体(mu-cone)相对应的一种可实现的等效电路;
图4示出了根据本发明实施例不同工作步骤的一个样品概览。
下文参照特定附图标记,这些附图标记通常意在等同地应用至所有图示,除非另外指明。
此外,在附图中使用影线标记或者其它图解法时,除非另外指明,否则相同的或者等效的元件由相同的影线标记或者图解法来表示。
具体实施方式
按照本发明的方法,是借助印刷技术来生产肖特基二极管。
这使用到衬底S,例如,如在图4中示出的。可选地,可以取决于其在与随后应用的电极E1粘合上的性质,提前在步骤50中为衬底S设置粘合层。这种技术在现有技术中是已知的并且可以涉及,例如,热稳定聚合物衬底的层压。然而,可替代地,步骤50也可以用于应用作为独立式衬底的聚合物衬底,其可以在根据本发明的加工之后从载体衬底S上被剥离,例如,以便容许机械上的柔性电路。
接着,在又一步骤75中,可以借助已知的技术来生成电极E1。例如,这种技术是采用印刷和/或PVD(物理气相沉积)。电极E1可以借助掩膜M1或者其后借助平板印刷术来形成。然后可以对这样获得的半成品零件进行进一步加工。
现在,在步骤100中,将半导体-纳米颗粒粉体HND应用至并且沉积在第一电极E1上。可以使用刮片技术、丝网方法、喷墨印刷、旋转涂层等,或者将粉体倾倒出。
在这之后,在步骤200中,利用激光L照射到从沉积半导体-纳米颗粒粉体HND获得的薄膜上,以便从该半导体-纳米颗粒粉体HND形成微圆锥体C1。微圆锥体或者多个微圆锥体的高度和厚度可以通过如下参数来进行调节:例如,从半导体-纳米颗粒粉体HND获得的薄膜的厚度、(脉冲)激光L的能量/功率密度、激光L的脉冲频率(如果有的话)、激光L的扫描速率、半导体-纳米颗粒分散体HND中的氧化分数、或者电极E1的表面能量。
有利地,电极E1被设计为能够承受激光处理。相应地,激光L的强度和应用时间很重要。通常,材料的选择(熔点)以及电极的设计(厚度、面积、热容量)本身可以确保电极E1的材料能承受激光处理。电极材料可以是钛,但也可以是金、银、铜、或者铝。
尽管下文将仅仅对一个微圆锥体进行讨论,但对于本领域的技术人员而言显而易见的是,可以借助一个或多个激光L从相同的沉积半导体-纳米颗粒粉体HND并行地和/或相继地生产多个微圆锥体C1、C2、...、Cn。当然,也可以应用不同的半导体-纳米颗粒粉体HND,转而可以从该不同的半导体-纳米颗粒粉体HND形成微圆锥体Cn+1、Cn+2、...、Cn+m。在这种情况下,从半导体-纳米颗粒粉体HND获得的未用于形成微圆锥体C1、C2、...、Cn的先前薄膜可以取决于应用而保留在衬底S/电极E1上或者被移除。
未用于形成微圆锥体C1、C2、...、Cn、Cn+1、Cn+2、...、Cn+m的沉积半导体-纳米颗粒粉体HND的移除可以涉及奔流和/或其它清洁步骤,诸如,吹掉、冲洗、底切蚀刻等。
现在形成一个或多个微圆锥体C1、C2、...、Cn、Cn+1、Cn+2、...、Cn+m,每一个微圆锥体具有底部和圆弧尖端,其中,微圆锥体C1、C2、...、Cn、Cn+1、Cn+2、...、Cn+m的底部与第一电极E1结合连接。
在又一嵌入步骤300中,这样形成的微圆锥体C1或者微圆锥体C1、C2、...、Cn、Cn+1、Cn+2、...、Cn+m嵌入在电绝缘聚合物基体P中。
聚合物基体P可以包括如下组中的至少一个:丙烯酸酯、聚氨酯、聚硅酮或者环氧树脂,诸如,聚酰亚胺、聚碳酸酯、和/或聚丙烯酸酯。
聚合物基体P可以是交联的或者不是交联的。如果例如为了更好的支撑效果、更好的稳定性、和/或更好的电气性能(例如,绝缘性能)等而期望交联,则聚合物基体可以通过激活(例如,借助紫外线灯或者激光灯L)进行交联或者经历交联刺激。
取决于聚合物基体P的厚度,可选地可能需要在步骤400中使微圆锥体C1或者微圆锥体C1、C2、...、Cn、Cn+1、Cn+2、...、Cn+m的尖端二次曝光。例如,这可以借助合适的蚀刻处理方法来完成,诸如,反应离子蚀刻,可能的是加上合适的工艺气体,诸如,氧气和/或CF4和/或SF6。
一旦微圆锥体C1或者微圆锥体C1、C2、...、Cn、Cn+1、Cn+2、...、Cn+m的圆弧尖端曝光,就在又一施加步骤500中沉积第二电极E2,从而使微圆锥体C1或者微圆锥体C1、C2、...、Cn、Cn+1、Cn+2、...、Cn+m的圆弧尖端与第二电极E2结合连接。
尽管上文仅仅描述了一个第二电极E2,但这当然也可以涉及多个电极,正如第一电极E1一样。例如,已经从第一半导体-纳米颗粒粉体HND形成的微圆锥体可以结合连接至作为已经从另一半导体-纳米颗粒粉体HND形成的微圆锥体的另一电极。
第二电极可以由多种不同的材料制成。应用第二电极的方法相应地也可以不同。
因此,同样可以借助PVD方法和/或印刷来应用第二电极E2,如上文在步骤75中描述的。
由于第二电极E2通常不再由激光进行加工,所以可能的材料的范围明显更大。因此,除了经典的金属电极和金属氧化物电极之外,我们也可以使用导电聚合物,诸如,聚-3,4-亚乙基二样噻吩、掺杂聚乙炔、斯皮诺、以及石墨烯或者富勒烯。
因此,可以借助合适地选择材料和加工方法来影响在第二电极E2与微圆锥体C1或者微圆锥体C1、C2、...、Cn、Cn+1、Cn+2、...、Cn+m之间的肖特基势垒。例如,这可以通过对微圆锥体的定向修改(氧化/不氧化、晶格修改、聚合物官能度)来实现。
因此,例如,可以通过例如在富氧气氛中的(局部)热处理来促进在微圆锥体的圆弧、圆弧尖端上形成氧化物。此外,能够仅仅通过如下事实而在微圆锥体的圆弧尖端上形成氧化物:例如,纳米颗粒在步骤200中的激光照射之前已经被(部分地)氧化。但也可以通过用HF(氢氟酸)等进行的处理来移除氧化物。在微圆锥体的尖端处的晶格缺陷可能是例如借助溅射蚀刻(离子蚀刻)而引起的。
因此,利用如上文所描述的本发明的方法,可以制造具有肖特基二极管的器件。该器件包括具有底部和圆弧尖端的至少一个微圆锥体C1;C2,其中,该微圆锥体C1;C2包括半导体材料。微圆锥体C1;C2嵌入在电绝缘聚合物基体P中,同时微圆锥体C1;C2的底部在衬底的一侧上与第一电极E1结合连接,并且微圆锥体C1;C2的圆弧尖端与第二电极E2结合连接。如果将第一电极E1或者第二电极E2(其中之一)与微圆锥体C1;C2一起作为肖特基结SC,则相应另一电极E2;E1将作为电阻(欧姆)结OC。
图1中的截面图中示出了多个这种部件。图2中描绘了等效电路。
在图1、图2、和图3中,假定微圆锥体C1;C2的圆弧尖端在一种情况下与第二电极E2一起形成肖特基结SC,则微圆锥体C1;C2的底部与第一电极E1一起就成为具有欧姆值的电阻结OC。图3中描绘了根据本发明的实施例的单个微圆锥体的等效电路。
尤其,本发明使得半导体-纳米颗粒粉体HND中的半导体能够是任何给定类型的掺杂,例如,p-掺杂、n-掺杂、或者甚至是未掺杂。
相应地,如上文同样描述的,可以连续地使用具有不同掺杂的不同半导体-纳米颗粒粉体HND,如上文所描述的。
尤其,半导体-纳米颗粒粉体HND中的半导体可以包括Si、Se、Ge、或者Ⅲ-Ⅴ族化合物的半导体,诸如,InP、GaAs等。
在上文所指示的本发明的帮助下,尤其能够加工甚至是柔性衬底S。例如,柔性衬底S可以是聚合物膜、柔性印刷电路板、纸状材料、以及织物衬底。
但诸如晶片等非柔性材料也可以用作衬底S。
因此,在本发明的帮助下,能够利用合算的可印刷薄膜方法来生产具有肖特基二极管的器件,其即使在高频应用中也具有典型二极管特性的所需电气性能。实现该结果尤其是由于现在能够在本发明的技术的帮助下生产晶体二极管。术语“晶体”不应被理解为针对本发明具有限制含义,并且同样包含多晶或者微晶微圆锥体。此外,本发明还使得能够按照相同的方式来生产非晶形微圆锥体。
尤其,可以借助合算技术按照合算方式不仅在20 MHz或者更高的情况下而且在达到GHz范围的情况下(>1 GHz,尤其是2 GHz,并且优选地>10 GHz)实现具有典型二极管特性的肖特基二极管。
Claims (9)
1.借助印刷技术制作含有肖特基二极管器件的方法,其特征在于,所述方法包括如下步骤:
第一步,将半导体纳米颗粒粉体(HND)沉积(100)在第一电极(E1)上,所述第一电极(E1)设置在衬底(S)上,
第二步,使用激光(L)对沉积的所述半导体纳米颗粒粉体(HND)照射(200)形成具有底部和圆弧尖端的圆锥体(C1、C2),其中,所述圆锥体的底部与所述第一电极(E1)结合连接,
第三步,将形成的所述圆锥体(C1、C2)嵌入(300)在电绝缘聚合物基体(P)中,
第四步,施加(500)第二电极(E2)与所述圆锥体(C1、C2)的圆弧尖端结合。
2.根据权利要求1所述的方法,其特征在于:在所述施加(500)第二电极(E2)之前,首先采用控制蚀刻(400)的方法将所述圆锥体(C1、C2)的圆弧尖端暴露出来。
3.一种含有肖特基二极管的器件,其特征在于,所述器件包括:
至少一个具有底部和圆弧尖端的圆锥体(C1;C2),所述圆锥体(C1;C2)是半导体材料,
其中,所述圆锥体(C1;C2)嵌入在电绝缘聚合物基体(P)中,所述圆锥体(C1;C2)的底部与第一电极(E1)结合连接,所述圆锥体(C1;C2)的圆弧尖端与第二电极(E2)结合连接,
其中,如果所述第一电极(E1)和所述第二电极(E2)中任意一个与所述圆锥体(C1;C2)一起作为肖特基结(SC),则另一电极(E2;E1)将作为电阻结(OC)。
4.根据权利要求3所述的器件,其特征在于:所述半导体是p型掺杂半导体。
5.根据权利要求3所述的器件,其特征在于:所述半导体是n型掺杂半导体。
6.根据权利要求3所述的器件,其特征在于:所述半导体是无掺杂半导体。
7.根据前述权利要求3至6中任一项所述的器件,其特征在于:所述半导体是包含Si或Se或Ge或者Ⅲ-Ⅴ族化合物的半导体。
8.根据前述权利要求3至7中任一项所述的器件,其特征在于:所述聚合物基体(P)是丙烯酸酯、聚氨酯、聚硅酮或者环氧树脂中的至少一个,或者是聚酰亚胺、聚碳酸酯、和/或聚丙烯酸酯。
9.根据前述权利要求3至8中任一项所述的部件,其特征在于:所述衬底(S)是柔性衬底。
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