JP5543350B2 - Iv族ナノ粒子接合およびそれを用いたデバイス - Google Patents
Iv族ナノ粒子接合およびそれを用いたデバイス Download PDFInfo
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- JP5543350B2 JP5543350B2 JP2010524064A JP2010524064A JP5543350B2 JP 5543350 B2 JP5543350 B2 JP 5543350B2 JP 2010524064 A JP2010524064 A JP 2010524064A JP 2010524064 A JP2010524064 A JP 2010524064A JP 5543350 B2 JP5543350 B2 JP 5543350B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/061—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being of the point-contact type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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Description
本出願は、2008年2月12日出願の米国特許出願第12/029838号明細書、および「METHODS AND APPARATUS FOR CREATING JUNCTIONS ON A SUBSTRATE」という名称の2007年9月4日出願の米国仮特許出願第60/969887号明細書の利益を主張するものであり、それらの特許出願の開示全体を参照として本明細書に組み込む。
一般に、ナノ粒子は、少なくとも1次元で100nm未満である微粒子である。一般に、用語「IV族ナノ粒子」は、平均直径が約1nm〜100nmの間である水素終端IV族ナノ粒子を表し、珪素、ゲルマニウム、炭素、またはそれらの混合物からなる。また、用語「IV族ナノ粒子」は、ドープされたIV族ナノ粒子も含む。
さらに、より小さな粒子は、より簡単にコロイド分散中に縣濁することができる。ナノ粒子は、それらの小さなサイズにより、取扱いが難しくなりがちである。したがって、1つの有利な様式では、ナノ粒子を輸送または保管するために、集められたナノ粒子が、インクなどコロイド分散またはコロイド中に縣濁されることがある。
次に図4A〜Cを参照すると、本発明による同心流通プラズマ反応器の1組の概略図が示されている。図4Aは、側面図を示す。図4Bは、断面図を示す。図4Cは、第1の誘電体および第2の誘電体にコーティングを施した状態での図4Bの断面図を示す。
一般に、以下のデバイス構成は、逆にすることもできる。例えば、p型ウェハとn型エミッタを逆にすることができ、したがってn型ウェハとp型エミッタを使用することもできる。
ここで図5Aを参照すると、従来の拡散均質エミッタ太陽電池の簡略図が示されている。一般に、n+(またはp+)の拡散均質エミッタ506が、p−(またはn−)のウェハ吸収体508の上に堆積されて、電荷分離および抽出のために必要なp−n接合を生成する。
ここで、VOCは開回路電圧であり、ISCは短絡電流であり、FFは曲線因子である。
高い太陽電池デバイス性能を保証するために、印刷される層は、ウェハ上に堆積されるときに適切なレベルの表面不動態化を提供することが期待される。少数キャリアの実効寿命の測定が、ウェハ上の拡散層の不動態化特性を評価するための信頼性の高い技法であることが広く認められている(A.CuevasおよびD.MacDonald「Measuring and interpreting the lifetime of silicon wafers」,76 SOLAR ENERGY 255(2004)参照)。
次に図5Dを参照すると、本発明による、図5Bのp型粒子平坦エミッタ526に関する実験からの電流−電圧(IV)プロットの簡略図が示されている。このグラフは、300W Oriel Solar Simulatorを使用して生成された、シミュレートされたAM1.5Gスペクトルからの照明の下でのIV曲線を示す。暗室で測定されたIV曲線もこの図に表される。最適化されていないウェハ構成で得られる結果がここで提示されており、粒子均質エミッタを使用してかなりの効率を得ることができることを示す。本発明者らは、ナノ粒子平坦エミッタ太陽電池の効率が、最終的には従来の太陽電池の効率に達する、またはそれを超えることができると考える。
VOC:0.543V
JSC:32.3mA/cm2
FF:0.726
効率:12.7%
本項で既に前述したように、堆積後の粒子有孔成形体は、被膜を融合および高密度化するために様々なプロセスによって処理することができ、それにより被膜を、より機械的に堅牢であり安定なものにする。これを実現するために、この実施例では、レーザ照射を使用して説明する。
別の方法として、既に上述したように、n型ドープされた印刷エミッタ層をp型ウェハ上で使用して太陽電池構造を構成することもできる。1つのそのような実施例を次に述べる。
印刷されるエミッタ太陽電池の効率は、いくつかのデバイス・パラメータを変えることによって改良することができ、そのうちの1つは、エミッタの厚さである。エミッタ層526の厚さを調節することによって、粒子均質エミッタ526層内で吸収される光の量を調節し、それにより太陽電池の効率を向上させることができる。例えば、厚さは、粒子(ナノ粒子)を含有する溶液の濃度および/または化学的組成を調節することによって、またはdpi(インチ当たりのドット数)比を変えることによって、または印刷される層の数を変えることによって、またはランプ速度や最大スピン速度などスピン・コーティングプロセス中のパラメータを変えることによって、インクジェット印刷中に制御することができる。別の方法として、まず、粒子均質エミッタ526を堆積および焼結し、次いで、化学的混合物(例えば、Cp−4(HF:HNO3:IPA)、NaOH、KOH、または他のよく知られているシリコン・エッチャント)を使用して、またはドライエッチング法(例えばCF4プラズマ・エッチングなど)を用いてエッチングすることができる。
この実施例で説明するように、エミッタ厚さを減少させるための別の方法は、スピンコーティング・プロセス中のスピン速度などインク堆積パラメータを変えるものである。
さらに、反射率を最小にするため(したがって、より多くの太陽光がウェハに入るようにするため)の反射防止コーティング(例えば、SiO2、SixNy、TixOyなど)として、また不動態化層として(外部汚染を最小限にするとともに、ウェハ結晶表面でのSi結合または欠陥のダングリングボンドにより生じる電荷トラップを実質的に減少するため)、誘電体層504も構成されることがある。
さらに、例えばスクリーン印刷によって、インクジェット印刷によって(例えば金属ナノ粒子の溶液を使用することによって)、または物理的蒸着(例えば、熱蒸発、電子ビーム堆積、スパッタリングなど)によって、エミッタ金属電極502を粒子均質エミッタ526の上に直接、または追加のTCO層504(例えば、インジウムスズ酸化物(ITO)など)の上に堆積して、導電率を高めることができる。
以下、それぞれp+粒子平坦エミッタとn+粒子平坦エミッタとの両方を使用する、さらに大きい、すなわち20cm2の面積の試料の実現を説明する。
次に図6A〜Bを参照すると、選択エミッタ型太陽電池の1組の簡略図が示されている。図6Aは、従来の拡散選択エミッタ型太陽電池の簡略図を示す。図6Bは、本発明による粒子選択エミッタ型太陽電池を示す。選択エミッタ型電池構造は、上述した均質拡散エミッタ太陽電池に勝る効率向上をもたらす(M.GREEN「SILICON SOLAR CELLS.ADVANCED PRINCIPLES AND PRACTICE」Chap.10(Centre for Photovoltaic Devices and Systems,University of New South Wales,Sydney 1995)参照)。
次に図6Bを参照すると、本発明による粒子選択エミッタ型太陽電池が示されている。特定の理論に縛られることを望むものではないが、本発明者らは、拡散均質エミッタ506でのドーパント濃度を実質的に減少させ、その一方で拡散電極領域609内の粒子でのドーパント濃度を実質的に増加させて、従来の拡散選択エミッタ型太陽電池とほぼ同じコスト、またはそれよりも低コストで、効率的な選択エミッタ型太陽電池を作製することができると考える。粒子は、所望のデザイン設計に応じて、連続する線または離れた点として構成されることがある。
次に図7A〜Bを参照すると、点接合太陽電池の1組の簡略図が示されている。図7Aは、従来の拡散点接合太陽電池の簡略図を示す。図7Bは、本発明による粒子点接合太陽電池を示す。
次に図8A〜Bを参照すると、全裏面電極点接触太陽電池の1組の簡略図が示されている。図8Aは、従来の拡散点接触太陽電池の簡略図を示す。図8Bは、本発明による裏面電極粒子点接触太陽電池の簡略図を示す。
Claims (11)
- 太陽光で発電するためのデバイスであって、
第1のドーパントでドープされたウェハであって、前面と裏面とを含み、前記前面が、
前記太陽光にさらされるように構成され、前記ウェハが、前面拡散領域をさらに含み、前記前面拡散領域が、第2のドーパントでドープされ、前記第2のドーパントが、前記第1のドーパントの逆ドーパントであるウェハと、
前記前面拡散領域に1組の小面積のパターンとして堆積された結合したIV族ナノ粒子薄膜であって、第3のドーパントを含み、前記第3のドーパントが、前記第1のドーパントの逆ドーパントである結合したナノ粒子薄膜と、ここで、前記結合したIV族ナノ粒子薄膜は、前記前面拡散領域を部分的に覆い、
前記前面に堆積された第1の電極であって、前記1組の小面積のパターンと電気接触する第1の電極と、
前記裏面に堆積された第2の電極と
を備え、
前記太陽光が前記前面に当てられるときに、電流が発生する
デバイス。 - 太陽光で発電するためのデバイスであって、
第1のドーパントでドープされたウェハであって、前面と裏面とを含み、前記前面が、前記太陽光にさらされるように構成され、前記ウェハが、前面拡散領域をさらに含み、前記前面拡散領域が、第2のドーパントでドープされ、前記第2のドーパントが、前記第1のドーパントの逆ドーパントであるウェハと、
前記ウェハの下に構成された裏面層であって、誘電体と、結合したIV族ナノ粒子薄膜からなる小面積のコンタクトとを含む裏面層と、ここで、前記結合したIV族ナノ粒子薄膜は、前記ウェハの裏面層側を部分的に覆い、
前記裏面に堆積された第2の電極であって、前記小面積のコンタクトと電気接触する第2の電極と
を備え、
前記太陽光が前記前面に当てられるときに、電流が発生する
デバイス。 - 請求項2記載のデバイスであって、前記前面に反射防止層が堆積されるデバイス。
- 請求項2記載のデバイスであって、前記IV族ナノ粒子薄膜からなる小面積のコンタクトが、線状のコンタクトであるデバイス。
- 請求項2記載のデバイスであって、前記IV族ナノ粒子薄膜からなる小面積のコンタクトが、点状のコンタクトであるデバイス。
- 請求項2記載のデバイスであって、前記結合した粒子の小面積のコンタクトが、1組のナノ粒子を含むコロイド分散から形成され、前記1組のナノ粒子の各ナノ粒子の直径が、約1nm〜約100nmの間であるデバイス。
- 請求項2記載のデバイスであって、前記結合した粒子の小面積のコンタクトが、1組のナノ粒子を含み、前記1組のナノ粒子の各ナノ粒子の直径が、約4nm〜約20nmの間であるデバイス。
- 太陽光で発電するためのデバイスであって、
第1のドーパントでドープされたウェハであって、前面と裏面とを含み、前記前面が、
前記太陽光にさらされるように構成され、前記ウェハが、前面拡散領域をさらに含み、前記前面拡散領域が、第2のドーパントでドープされ、前記第2のドーパントが、前記第1のドーパントの逆ドーパントであるウェハと、
前記裏面に堆積された結合したIV族ナノ粒子BSF層と、ここで、前記結合したIV族ナノ粒子BSF層は、前記ウェハの裏面を部分的に覆い、
前記裏面に堆積された第2の電極であって、前記結合したIV族ナノ粒子BSF層と電気接触する第2の電極と
を備え、
前記太陽光が前記前面に当てられるときに、電流が発生する
デバイス。 - 太陽光で発電するためのデバイスであって、
第1のドーパントでドープされたウェハであって、前面と裏面とを含み、前記前面が、前記太陽光にさらされるように構成されたウェハと、
前記裏面に第1のパターンで堆積された第2のドーパントでドープされた第1の結合したIV族ナノ粒子薄膜と、ここで、前記第1の結合したIV族ナノ粒子薄膜は、前記ウェハの裏面を部分的に覆い、
前記裏面に第2のパターンで堆積された第3のドーパントでドープされた第2の結合したIV族ナノ粒子薄膜であって、前記第3のドーパントが、前記第2のドーパントの逆ドーパントであり、ここで、前記第2の結合したIV族ナノ粒子薄膜は、前記ウェハの裏面を部分的に覆い、前記第1のパターンが、前記第2のパターンと交差指型にされている第2の結合したIV族ナノ粒子薄膜と、
前記第1の結合したIV族ナノ粒子薄膜に堆積された第1の電極と、
前記第2の結合したIV族ナノ粒子薄膜に堆積された第2の電極と
を備え、
前記太陽光が前記前面に当てられるときに、電流が発生する
デバイス。 - 請求項9記載のデバイスであって、前記結合したIV族ナノ粒子薄膜が、1組のナノ粒子を含むコロイド分散から形成され、前記1組のナノ粒子の各ナノ粒子の直径が、約1nm〜約100nmの間であるデバイス。
- 請求項9記載のデバイスであって、前記結合したIV族ナノ粒子薄膜が、1組のナノ粒子を含み、前記1組のナノ粒子の各ナノ粒子の直径が、約4nm〜約20nmの間であるデバイス。
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CN101828266B (zh) | 2012-11-28 |
CN101828266A (zh) | 2010-09-08 |
US20100275982A1 (en) | 2010-11-04 |
EP2191513A2 (en) | 2010-06-02 |
EP2530725A2 (en) | 2012-12-05 |
JP2011505679A (ja) | 2011-02-24 |
KR20100075467A (ko) | 2010-07-02 |
US20120009721A1 (en) | 2012-01-12 |
WO2009032359A3 (en) | 2010-03-11 |
WO2009032359A2 (en) | 2009-03-12 |
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