JP4869061B2 - 焼結された半導体材料 - Google Patents
焼結された半導体材料 Download PDFInfo
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- JP4869061B2 JP4869061B2 JP2006505871A JP2006505871A JP4869061B2 JP 4869061 B2 JP4869061 B2 JP 4869061B2 JP 2006505871 A JP2006505871 A JP 2006505871A JP 2006505871 A JP2006505871 A JP 2006505871A JP 4869061 B2 JP4869061 B2 JP 4869061B2
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- 239000000463 material Substances 0.000 title claims description 134
- 239000004065 semiconductor Substances 0.000 title claims description 49
- 239000000843 powder Substances 0.000 claims description 112
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 45
- 238000010438 heat treatment Methods 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 238000002844 melting Methods 0.000 claims description 21
- 230000008018 melting Effects 0.000 claims description 21
- 239000011863 silicon-based powder Substances 0.000 claims description 20
- 238000007906 compression Methods 0.000 claims description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 17
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- 230000006835 compression Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000006104 solid solution Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 66
- 238000005245 sintering Methods 0.000 description 29
- 239000007789 gas Substances 0.000 description 15
- 230000005855 radiation Effects 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- 239000007791 liquid phase Substances 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 238000007373 indentation Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910017214 AsGa Inorganic materials 0.000 description 1
- 229910001339 C alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
料を、半導体粉末の焼結によって製造することにある。
解されるべきである。以降に見られるように、「液体相」は過融解液に対応する粘凋相も示して良く、従って用語「融解」は「過融解」を示して良い。
の圧力下1325℃の温度で半時間ホットプレスによって焼結すると、4%に近い多孔度を有する材料が得られる。材料の表面を融解するレーザービームによる熱処理により、材料の表面層の多孔度を実質的に零にまで減少させることができる。
同様の結果は、シリコンとスズの混合物でも得られる。
図2の方法で直接得られる。構造26はどのような厚さであっても良い。支持部27は、例えば1から数ミリメートルとかなり薄くても良いし、又は1から数センチメートルとかなり厚くても良い。例えば50ミクロンの、薄い半導体材料28の場合、又はかなり大きな寸法の半導体ウエファーを製造する場合等に、構造26は好適であろう。
っている。窪み82は曲折しており、窪み84は直線で囲まれている。それから、窪み82及び84はそれぞれが望む型と濃度のドーピングをされた半導体粉末で充填される。
ような合金は、熱処理において、種々の粉末粒が焼結によって凝集し、異なる性質の粉末粒が接触する部分に見られる。望まれれば、これらの合金の形成は、それらが混合しすぎないようにして異なる性質の粉末を置くことによって制限されて良い。種々の合金の粉末は、合金の比率を増すために、焼結される粉末層の中に配置されてもまた良い。更に、用いる粉末又は得られる材料は上述のようにドープされて良い。
形状を有しても良い。
Claims (6)
- 周期律表の4族の元素及びそれらの固溶体からなるグループの少なくとも1つの成分を有する粉末から半導体材料(25,90,100,130)を製造する方法であって、
少なくとも一部の粉末が融解され又は粘凋になされるべく、粉末の圧縮の工程並びに熱処理の工程を有しており、
前記粉末が融解され又は粘凋になされている領域での多孔度は0.2%より低く、
前記粉末がシリコンとゲルマニウムとの混合物を有していて該ゲルマニウムを融解する工程、前記粉末がシリコンとガラス粉末との混合物またはシリコンとセラミック粉末との混合物を有していて該ガラス粉末またはセラミック粉末を粘凋にする工程、及び、前記粉末が純粋なシリコン粉末とドープされたシリコン粉末との混合物を有していて該ドープされたシリコン粉末を融解する工程からなる群から選ばれた工程により、前記粉末は融解され又は粘凋になされることを特徴とする半導体材料の製造方法。 - 圧縮の工程と熱処理の工程とは同時に行われることを特徴とする請求項1に記載の方法。
- 前記熱処理は、前記材料の特定の領域にある粉末のみが融解され又は粘凋になされるような熱処理であることを特徴とする請求項1又は2に記載の方法。
- 圧縮の工程の前に前記粉末をプレート(10)上に置く工程を有し、前記粉末は、プレート上の位置によって性質、粒度分布及び/又はドープ状態が異なることを特徴とする請求項1乃至3のいずれかに記載の方法。
- 圧縮の工程で、前記粉末は材料の表面にテクスチャ形成が可能な表面を有するプレート(10,20)の間で圧縮されることを特徴とする請求項1乃至4のいずれかに記載の方法。
- 請求項1乃至5のいずれかに記載の方法を用いて製造された半導体材料を有することを特徴とする構造。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR03/04676 | 2003-04-14 | ||
FR0304676 | 2003-04-14 | ||
PCT/FR2004/050151 WO2004093202A1 (fr) | 2003-04-14 | 2004-04-09 | Materiau semiconducteur obtenu par frittage |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006523021A JP2006523021A (ja) | 2006-10-05 |
JP4869061B2 true JP4869061B2 (ja) | 2012-02-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006505871A Expired - Fee Related JP4869061B2 (ja) | 2003-04-14 | 2004-04-09 | 焼結された半導体材料 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8105923B2 (ja) |
EP (1) | EP1618612A1 (ja) |
JP (1) | JP4869061B2 (ja) |
WO (1) | WO2004093202A1 (ja) |
Families Citing this family (29)
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FR2853562B1 (fr) * | 2003-04-14 | 2006-08-11 | Centre Nat Rech Scient | Procede de fabrication de granules semiconducteurs |
US20090028740A1 (en) * | 2003-04-14 | 2009-01-29 | S'tile | Method for the production of semiconductor granules |
US9493358B2 (en) * | 2003-04-14 | 2016-11-15 | Stile | Photovoltaic module including integrated photovoltaic cells |
US8192648B2 (en) * | 2003-04-14 | 2012-06-05 | S'tile | Method for forming a sintered semiconductor material |
US9741881B2 (en) | 2003-04-14 | 2017-08-22 | S'tile | Photovoltaic module including integrated photovoltaic cells |
US8405183B2 (en) * | 2003-04-14 | 2013-03-26 | S'Tile Pole des Eco-Industries | Semiconductor structure |
US7465871B2 (en) * | 2004-10-29 | 2008-12-16 | Massachusetts Institute Of Technology | Nanocomposites with high thermoelectric figures of merit |
US8865995B2 (en) | 2004-10-29 | 2014-10-21 | Trustees Of Boston College | Methods for high figure-of-merit in nanostructured thermoelectric materials |
US7943846B2 (en) | 2006-04-21 | 2011-05-17 | Innovalight, Inc. | Group IV nanoparticles in an oxide matrix and devices made therefrom |
US20080078441A1 (en) * | 2006-09-28 | 2008-04-03 | Dmitry Poplavskyy | Semiconductor devices and methods from group iv nanoparticle materials |
US20080230782A1 (en) * | 2006-10-09 | 2008-09-25 | Homer Antoniadis | Photoconductive devices with enhanced efficiency from group iv nanoparticle materials and methods thereof |
US20100275982A1 (en) * | 2007-09-04 | 2010-11-04 | Malcolm Abbott | Group iv nanoparticle junctions and devices therefrom |
US7704866B2 (en) | 2008-03-18 | 2010-04-27 | Innovalight, Inc. | Methods for forming composite nanoparticle-metal metallization contacts on a substrate |
US8361834B2 (en) | 2008-03-18 | 2013-01-29 | Innovalight, Inc. | Methods of forming a low resistance silicon-metal contact |
US7923368B2 (en) | 2008-04-25 | 2011-04-12 | Innovalight, Inc. | Junction formation on wafer substrates using group IV nanoparticles |
FR2931297B1 (fr) | 2008-05-16 | 2010-08-27 | Commissariat Energie Atomique | Film autosupporte et plaquette en silicium obtenue par frittage |
FR2938972B1 (fr) * | 2008-11-21 | 2011-04-29 | Commissariat Energie Atomique | Cellule photovoltaique a emetteur distribue dans un substrat et procede de realisation d'une telle cellule |
FR2940520B1 (fr) * | 2008-12-22 | 2011-03-18 | Tile S | Structure semiconductrice |
FR2944142B1 (fr) * | 2009-04-02 | 2011-06-03 | Tile S | Structure electronique a couche epitaxiee sur silicium fritte |
KR101121001B1 (ko) * | 2009-08-19 | 2012-03-05 | 에스케이씨솔믹스 주식회사 | 반응소결 탄화규소 소결체 접합용 접합제 및 이를 이용한 접합방법 |
FR2966287B1 (fr) | 2010-10-15 | 2012-12-28 | Inst Polytechnique Grenoble | Élaboration de silicium polycristallin par frittage naturel pour applications photovoltaïques |
KR101386271B1 (ko) | 2010-12-10 | 2014-04-18 | 데이진 가부시키가이샤 | 반도체 적층체, 반도체 디바이스, 및 그들의 제조 방법 |
JP5921088B2 (ja) * | 2011-05-27 | 2016-05-24 | 帝人株式会社 | 未焼結シリコン粒子膜及び半導体シリコン膜、並びにそれらの製造方法 |
JP2012229146A (ja) * | 2011-04-27 | 2012-11-22 | Hikari Kobayashi | シリコン微細粒子の製造方法及びそれを用いたSiインク、太陽電池並びに半導体装置 |
FR2985524B1 (fr) | 2012-01-09 | 2014-03-07 | Commissariat Energie Atomique | Procede de preparation de silicium a l'etat solide |
FR2989389B1 (fr) | 2012-04-11 | 2015-07-17 | Commissariat Energie Atomique | Procede de preparation d'une couche de silicium cristallise a gros grains. |
FR2990957B1 (fr) | 2012-05-25 | 2014-06-13 | Commissariat Energie Atomique | Procede de formation d'une couche de silicium epitaxiee. |
FR3011379B1 (fr) * | 2013-09-27 | 2016-12-23 | Commissariat Energie Atomique | Procede de preparation d'un substrat de silicium recristallise a gros cristallites |
JP7065323B2 (ja) | 2017-02-09 | 2022-05-12 | パナソニックIpマネジメント株式会社 | 全固体電池およびその製造方法 |
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2004
- 2004-04-09 JP JP2006505871A patent/JP4869061B2/ja not_active Expired - Fee Related
- 2004-04-09 EP EP04742838A patent/EP1618612A1/fr not_active Withdrawn
- 2004-04-09 WO PCT/FR2004/050151 patent/WO2004093202A1/fr active Application Filing
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WO2004093202A1 (fr) | 2004-10-28 |
JP2006523021A (ja) | 2006-10-05 |
US20070178675A1 (en) | 2007-08-02 |
US8105923B2 (en) | 2012-01-31 |
EP1618612A1 (fr) | 2006-01-25 |
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