FR2985524B1 - Procede de preparation de silicium a l'etat solide - Google Patents

Procede de preparation de silicium a l'etat solide

Info

Publication number
FR2985524B1
FR2985524B1 FR1250204A FR1250204A FR2985524B1 FR 2985524 B1 FR2985524 B1 FR 2985524B1 FR 1250204 A FR1250204 A FR 1250204A FR 1250204 A FR1250204 A FR 1250204A FR 2985524 B1 FR2985524 B1 FR 2985524B1
Authority
FR
France
Prior art keywords
silicon
preparation
solid state
solid
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1250204A
Other languages
English (en)
Other versions
FR2985524A1 (fr
Inventor
Jean-Paul Garandet
Beatrice Drevet
Emmanuel Flahaut
Charles Huguet
Damien Ponthenier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1250204A priority Critical patent/FR2985524B1/fr
Priority to PCT/IB2013/050156 priority patent/WO2013105019A1/fr
Publication of FR2985524A1 publication Critical patent/FR2985524A1/fr
Application granted granted Critical
Publication of FR2985524B1 publication Critical patent/FR2985524B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
FR1250204A 2012-01-09 2012-01-09 Procede de preparation de silicium a l'etat solide Expired - Fee Related FR2985524B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1250204A FR2985524B1 (fr) 2012-01-09 2012-01-09 Procede de preparation de silicium a l'etat solide
PCT/IB2013/050156 WO2013105019A1 (fr) 2012-01-09 2013-01-08 Procede de preparation de silicium a l'etat solide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1250204A FR2985524B1 (fr) 2012-01-09 2012-01-09 Procede de preparation de silicium a l'etat solide

Publications (2)

Publication Number Publication Date
FR2985524A1 FR2985524A1 (fr) 2013-07-12
FR2985524B1 true FR2985524B1 (fr) 2014-03-07

Family

ID=47716129

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1250204A Expired - Fee Related FR2985524B1 (fr) 2012-01-09 2012-01-09 Procede de preparation de silicium a l'etat solide

Country Status (2)

Country Link
FR (1) FR2985524B1 (fr)
WO (1) WO2013105019A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR704690A (fr) 1929-10-30 1931-05-23 Westinghouse Electric & Mfg Co Perfectionnements aux systèmes de transmission avec interrupteurs et relais rapides
US4243471A (en) * 1978-05-02 1981-01-06 International Business Machines Corporation Method for directional solidification of silicon
DE3419137A1 (de) * 1984-05-23 1985-11-28 Bayer Ag, 5090 Leverkusen Verfahren und vorrichtung zur herstellung von halbleiterfolien
JP2947529B2 (ja) 1991-03-19 1999-09-13 ユニオンマテリアル株式会社 整形結晶の製造方法及び製造装置
JP4869061B2 (ja) 2003-04-14 2012-02-01 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 焼結された半導体材料

Also Published As

Publication number Publication date
FR2985524A1 (fr) 2013-07-12
WO2013105019A1 (fr) 2013-07-18

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150930