FR2944142B1 - Structure electronique a couche epitaxiee sur silicium fritte - Google Patents

Structure electronique a couche epitaxiee sur silicium fritte

Info

Publication number
FR2944142B1
FR2944142B1 FR0952110A FR0952110A FR2944142B1 FR 2944142 B1 FR2944142 B1 FR 2944142B1 FR 0952110 A FR0952110 A FR 0952110A FR 0952110 A FR0952110 A FR 0952110A FR 2944142 B1 FR2944142 B1 FR 2944142B1
Authority
FR
France
Prior art keywords
epitaxed
fritte
silicon
layer
electronic structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0952110A
Other languages
English (en)
Other versions
FR2944142A1 (fr
Inventor
Alain Straboni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stile
Original Assignee
Stile
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stile filed Critical Stile
Priority to FR0952110A priority Critical patent/FR2944142B1/fr
Priority to PCT/FR2010/050628 priority patent/WO2010112782A2/fr
Priority to CN2010800157559A priority patent/CN102439736A/zh
Priority to EP10723184A priority patent/EP2415084A2/fr
Publication of FR2944142A1 publication Critical patent/FR2944142A1/fr
Application granted granted Critical
Publication of FR2944142B1 publication Critical patent/FR2944142B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
FR0952110A 2009-04-02 2009-04-02 Structure electronique a couche epitaxiee sur silicium fritte Expired - Fee Related FR2944142B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0952110A FR2944142B1 (fr) 2009-04-02 2009-04-02 Structure electronique a couche epitaxiee sur silicium fritte
PCT/FR2010/050628 WO2010112782A2 (fr) 2009-04-02 2010-04-01 Structure electronique a couche epitaxiee sur silicium fritte
CN2010800157559A CN102439736A (zh) 2009-04-02 2010-04-01 包括烧结硅上的外延层的电子结构
EP10723184A EP2415084A2 (fr) 2009-04-02 2010-04-01 Structure electronique a couche epitaxiee sur silicium fritte

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0952110A FR2944142B1 (fr) 2009-04-02 2009-04-02 Structure electronique a couche epitaxiee sur silicium fritte

Publications (2)

Publication Number Publication Date
FR2944142A1 FR2944142A1 (fr) 2010-10-08
FR2944142B1 true FR2944142B1 (fr) 2011-06-03

Family

ID=41449905

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0952110A Expired - Fee Related FR2944142B1 (fr) 2009-04-02 2009-04-02 Structure electronique a couche epitaxiee sur silicium fritte

Country Status (4)

Country Link
EP (1) EP2415084A2 (fr)
CN (1) CN102439736A (fr)
FR (1) FR2944142B1 (fr)
WO (1) WO2010112782A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3037719B1 (fr) * 2015-06-17 2018-07-27 S'tile Structure electronique sur support ceramique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140276A (en) * 1979-04-18 1980-11-01 Matsushita Electric Ind Co Ltd Photovoltaic element
DE3035563C2 (de) * 1980-09-20 1984-10-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer polykristallinen Silizium-Solarzelle
DE19842002A1 (de) * 1998-09-04 2000-03-09 Matthias Nell Substrat zur Abscheidung einer für Solarzellen geeigneten Halbleiterschicht und Herstellungsverfahren des Substrats
FR2853562B1 (fr) * 2003-04-14 2006-08-11 Centre Nat Rech Scient Procede de fabrication de granules semiconducteurs
EP1618612A1 (fr) * 2003-04-14 2006-01-25 Centre National De La Recherche Scientifique (Cnrs) Materiau semiconducteur obtenu par frittage
JP4848666B2 (ja) * 2005-05-06 2011-12-28 大日本印刷株式会社 酸化物半導体電極用転写材、色素増感型太陽電池用基材、色素増感型太陽電池、及びそれらの製造方法
CN101132029A (zh) * 2007-09-27 2008-02-27 南开大学 铝基晶体硅颗粒太阳电池及其制备方法

Also Published As

Publication number Publication date
WO2010112782A3 (fr) 2011-05-19
FR2944142A1 (fr) 2010-10-08
CN102439736A (zh) 2012-05-02
EP2415084A2 (fr) 2012-02-08
WO2010112782A2 (fr) 2010-10-07

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