DE102015205230B4 - Verfahren zur Herstellung von Bauelementen aufweisend eine Schottky-Diode mittels Drucktechnik und Bauelement - Google Patents

Verfahren zur Herstellung von Bauelementen aufweisend eine Schottky-Diode mittels Drucktechnik und Bauelement Download PDF

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DE102015205230B4
DE102015205230B4 DE102015205230.3A DE102015205230A DE102015205230B4 DE 102015205230 B4 DE102015205230 B4 DE 102015205230B4 DE 102015205230 A DE102015205230 A DE 102015205230A DE 102015205230 B4 DE102015205230 B4 DE 102015205230B4
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electrode
cone
semiconductor material
component
tip
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English (en)
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DE102015205230A1 (de
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Niels Benson
Roland Schmechel
Marc Hoffmann
Thomas Kaiser
Daniel Erni
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Universitaet Duisburg Essen
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Universitaet Duisburg Essen
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Priority to DE102015205230.3A priority Critical patent/DE102015205230B4/de
Priority to PCT/EP2016/056315 priority patent/WO2016150988A1/de
Priority to CN201680014452.2A priority patent/CN107438893B/zh
Priority to EP16711621.9A priority patent/EP3275010A1/de
Priority to US15/560,544 priority patent/US10411142B2/en
Publication of DE102015205230A1 publication Critical patent/DE102015205230A1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H01L29/66212—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
DE102015205230.3A 2015-03-23 2015-03-23 Verfahren zur Herstellung von Bauelementen aufweisend eine Schottky-Diode mittels Drucktechnik und Bauelement Active DE102015205230B4 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102015205230.3A DE102015205230B4 (de) 2015-03-23 2015-03-23 Verfahren zur Herstellung von Bauelementen aufweisend eine Schottky-Diode mittels Drucktechnik und Bauelement
PCT/EP2016/056315 WO2016150988A1 (de) 2015-03-23 2016-03-23 Verfahren zur herstellung von bauelementen aufweisend eine schottky-diode mittels drucktechnik
CN201680014452.2A CN107438893B (zh) 2015-03-23 2016-03-23 借助印刷技术制作含有肖特基二极管器件的方法
EP16711621.9A EP3275010A1 (de) 2015-03-23 2016-03-23 Verfahren zur herstellung von bauelementen aufweisend eine schottky-diode mittels drucktechnik
US15/560,544 US10411142B2 (en) 2015-03-23 2016-03-23 Method for production of components comprising a schottky diode by means of printing technology

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102015205230.3A DE102015205230B4 (de) 2015-03-23 2015-03-23 Verfahren zur Herstellung von Bauelementen aufweisend eine Schottky-Diode mittels Drucktechnik und Bauelement

Publications (2)

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DE102015205230A1 DE102015205230A1 (de) 2016-09-29
DE102015205230B4 true DE102015205230B4 (de) 2023-01-19

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Country Status (5)

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US (1) US10411142B2 (pt-PT)
EP (1) EP3275010A1 (pt-PT)
CN (1) CN107438893B (pt-PT)
DE (1) DE102015205230B4 (pt-PT)
WO (1) WO2016150988A1 (pt-PT)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1703569A2 (en) 2005-03-16 2006-09-20 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
WO2009032412A1 (en) 2007-08-28 2009-03-12 California Institute Of Technology Polymer-embedded semiconductor rod arrays
US20110234289A1 (en) 2005-12-07 2011-09-29 Vivek Subramanian Process-Variation Tolerant Diode, Standard Cells Including the Same, Tags and Sensors Containing the Same, and Methods for Manufacturing the Same
US20130189831A1 (en) 2012-01-19 2013-07-25 Weidong Li Silicon/germanium nanoparticle inks and methods of forming inks with desired printing properties
US8624108B1 (en) 2006-11-01 2014-01-07 Banpil Photonics, Inc. Photovoltaic cells based on nano or micro-scale structures

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US8071168B2 (en) * 2002-08-26 2011-12-06 Nanoink, Inc. Micrometric direct-write methods for patterning conductive material and applications to flat panel display repair
JP4293586B2 (ja) * 2002-08-30 2009-07-08 浜松ホトニクス株式会社 ナノ粒子の製造方法及び製造装置
US20070128905A1 (en) * 2003-06-12 2007-06-07 Stuart Speakman Transparent conducting structures and methods of production thereof
US8314327B2 (en) * 2005-11-06 2012-11-20 Banpil Photonics, Inc. Photovoltaic cells based on nano or micro-scale structures
JP2008127214A (ja) * 2006-11-16 2008-06-05 Honda Motor Co Ltd 炭化ケイ素ナノ構造体およびその製造方法
US10231344B2 (en) * 2007-05-18 2019-03-12 Applied Nanotech Holdings, Inc. Metallic ink
US20100275982A1 (en) * 2007-09-04 2010-11-04 Malcolm Abbott Group iv nanoparticle junctions and devices therefrom
BRPI0722353A2 (pt) * 2007-12-28 2014-03-18 Univ Aix Marseille Ii Nanocompósitos híbridos
CN101465383B (zh) * 2008-12-30 2011-08-03 中国科学院上海微系统与信息技术研究所 电阻转换存储器的制造方法
TWI424160B (zh) * 2009-06-17 2014-01-21 Univ Nat Chiao Tung 結合矽奈米線閘極二極體之感測元件、製造方法及其檢測系統
WO2011078780A1 (en) * 2009-12-22 2011-06-30 Qunano Ab Method for manufacturing a nanowire structure
CN102903849B (zh) * 2011-07-29 2015-07-01 清华大学 肖特基二极管及其制备方法
DE102011122091A1 (de) * 2011-12-22 2013-06-27 Diotec Semiconductor Ag Schottky-Halbleiterprozess
JP5914060B2 (ja) * 2012-03-09 2016-05-11 三菱電機株式会社 炭化珪素半導体装置の製造方法
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JP2016516211A (ja) * 2013-02-18 2016-06-02 オルボテック リミテッド ツーステップの直接描画レーザ・メタライゼーション
JP5760060B2 (ja) * 2013-09-27 2015-08-05 株式会社茨城技研 金属皮膜形成方法並びに金属皮膜形成製品の製造方法及び製造装置
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1703569A2 (en) 2005-03-16 2006-09-20 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
US20110234289A1 (en) 2005-12-07 2011-09-29 Vivek Subramanian Process-Variation Tolerant Diode, Standard Cells Including the Same, Tags and Sensors Containing the Same, and Methods for Manufacturing the Same
US8624108B1 (en) 2006-11-01 2014-01-07 Banpil Photonics, Inc. Photovoltaic cells based on nano or micro-scale structures
WO2009032412A1 (en) 2007-08-28 2009-03-12 California Institute Of Technology Polymer-embedded semiconductor rod arrays
US20130189831A1 (en) 2012-01-19 2013-07-25 Weidong Li Silicon/germanium nanoparticle inks and methods of forming inks with desired printing properties

Also Published As

Publication number Publication date
US10411142B2 (en) 2019-09-10
DE102015205230A1 (de) 2016-09-29
EP3275010A1 (de) 2018-01-31
CN107438893A (zh) 2017-12-05
WO2016150988A1 (de) 2016-09-29
US20180114867A1 (en) 2018-04-26
CN107438893B (zh) 2020-11-27

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