CN107302002B - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN107302002B CN107302002B CN201710017736.3A CN201710017736A CN107302002B CN 107302002 B CN107302002 B CN 107302002B CN 201710017736 A CN201710017736 A CN 201710017736A CN 107302002 B CN107302002 B CN 107302002B
- Authority
- CN
- China
- Prior art keywords
- layer
- insulating layer
- portions
- hole
- columnar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000003860 storage Methods 0.000 claims abstract description 22
- 238000003475 lamination Methods 0.000 claims abstract description 18
- 239000012212 insulator Substances 0.000 claims abstract description 9
- 239000011810 insulating material Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000005001 laminate film Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims 4
- 239000010410 layer Substances 0.000 description 276
- 230000004888 barrier function Effects 0.000 description 29
- 239000000758 substrate Substances 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662321963P | 2016-04-13 | 2016-04-13 | |
US62/321,963 | 2016-04-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107302002A CN107302002A (zh) | 2017-10-27 |
CN107302002B true CN107302002B (zh) | 2021-02-05 |
Family
ID=60038426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710017736.3A Active CN107302002B (zh) | 2016-04-13 | 2017-01-11 | 半导体装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10096613B2 (zh) |
CN (1) | CN107302002B (zh) |
TW (1) | TWI635598B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102401178B1 (ko) | 2017-11-03 | 2022-05-24 | 삼성전자주식회사 | 3차원 반도체 소자 |
JP2019161010A (ja) * | 2018-03-13 | 2019-09-19 | 東芝メモリ株式会社 | 半導体装置 |
JP2019161162A (ja) * | 2018-03-16 | 2019-09-19 | 東芝メモリ株式会社 | 半導体装置およびその製造方法 |
JP2019165132A (ja) * | 2018-03-20 | 2019-09-26 | 東芝メモリ株式会社 | 半導体記憶装置及びその製造方法 |
JP2019165133A (ja) * | 2018-03-20 | 2019-09-26 | 東芝メモリ株式会社 | 半導体記憶装置及びその製造方法 |
CN108682676A (zh) * | 2018-05-23 | 2018-10-19 | 长江存储科技有限责任公司 | 三维存储器及其制造方法 |
JP2020035913A (ja) * | 2018-08-30 | 2020-03-05 | キオクシア株式会社 | 半導体記憶装置 |
JP2020043211A (ja) * | 2018-09-10 | 2020-03-19 | キオクシア株式会社 | 半導体装置およびその製造方法 |
EP3891780A4 (en) * | 2018-12-07 | 2022-12-21 | Sunrise Memory Corporation | METHODS OF FORMING NETWORKS OF MULTILAYER VERTICAL NOR TYPE MEMORY CHAINS |
JP2020126938A (ja) * | 2019-02-05 | 2020-08-20 | キオクシア株式会社 | 半導体記憶装置 |
JP2020150075A (ja) * | 2019-03-12 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置および半導体記憶装置の製造方法 |
CN110707091A (zh) * | 2019-08-29 | 2020-01-17 | 长江存储科技有限责任公司 | 三维存储器及其形成方法 |
JP2021039965A (ja) * | 2019-08-30 | 2021-03-11 | キオクシア株式会社 | 半導体記憶装置および半導体記憶装置の製造方法 |
JP2021048297A (ja) * | 2019-09-19 | 2021-03-25 | キオクシア株式会社 | 半導体記憶装置 |
US11727971B2 (en) | 2020-12-22 | 2023-08-15 | Macronix International Co., Ltd. | Memory device and method of fabricating the same |
JP2022147716A (ja) * | 2021-03-23 | 2022-10-06 | キオクシア株式会社 | 半導体記憶装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101981689A (zh) * | 2008-03-26 | 2011-02-23 | 株式会社东芝 | 半导体存储器及其制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5016832B2 (ja) | 2006-03-27 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP2009016400A (ja) | 2007-06-29 | 2009-01-22 | Toshiba Corp | 積層配線構造体及びその製造方法並びに半導体装置及びその製造方法 |
US8541831B2 (en) | 2008-12-03 | 2013-09-24 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method for fabricating the same |
JP4922370B2 (ja) | 2009-09-07 | 2012-04-25 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
KR101805769B1 (ko) | 2010-11-29 | 2017-12-08 | 삼성전자주식회사 | 3차원 반도체 기억 소자의 제조 방법 |
JP2012174892A (ja) | 2011-02-22 | 2012-09-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JP2015088732A (ja) | 2013-09-27 | 2015-05-07 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
US9202750B2 (en) * | 2013-10-31 | 2015-12-01 | Macronix International Co., Ltd. | Stacked 3D memory with isolation layer between memory blocks and access conductors coupled to decoding elements in memory blocks |
US9627403B2 (en) * | 2015-04-30 | 2017-04-18 | Sandisk Technologies Llc | Multilevel memory stack structure employing support pillar structures |
-
2016
- 2016-09-07 US US15/258,559 patent/US10096613B2/en active Active
- 2016-12-19 TW TW105142014A patent/TWI635598B/zh active
-
2017
- 2017-01-11 CN CN201710017736.3A patent/CN107302002B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101981689A (zh) * | 2008-03-26 | 2011-02-23 | 株式会社东芝 | 半导体存储器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201803088A (zh) | 2018-01-16 |
US20170301687A1 (en) | 2017-10-19 |
TWI635598B (zh) | 2018-09-11 |
CN107302002A (zh) | 2017-10-27 |
US10096613B2 (en) | 2018-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107302002B (zh) | 半导体装置及其制造方法 | |
CN106469735B (zh) | 半导体装置及半导体装置的制造方法 | |
CN108573977B (zh) | 半导体装置及其制造方法 | |
US10504918B2 (en) | Memory device | |
US9646989B1 (en) | Three-dimensional memory device | |
US20240120395A1 (en) | Nonvolatile semiconductor memory device including a memory cell | |
CN107833888B (zh) | 半导体装置及其制造方法 | |
TWI643316B (zh) | 半導體裝置及其製造方法 | |
US11127754B2 (en) | Semiconductor storage device | |
JP2017163057A (ja) | 半導体記憶装置 | |
US11985822B2 (en) | Memory device | |
JP2010027870A (ja) | 半導体記憶装置及びその製造方法 | |
TWI704683B (zh) | 半導體記憶裝置及半導體記憶裝置之製造方法 | |
KR102627897B1 (ko) | 반도체 장치 및 그 제조방법 | |
CN111490052B (zh) | 垂直存储器件 | |
US10586805B2 (en) | Semiconductor memory device | |
US9917101B1 (en) | Semiconductor memory device | |
US9853052B1 (en) | Semiconductor device and method for manufacturing same | |
JP2022048039A (ja) | 半導体記憶装置 | |
US10483207B2 (en) | Semiconductor device | |
CN115117067A (zh) | 半导体存储装置 | |
CN115117088A (zh) | 半导体装置及其制造方法 | |
US20150263032A1 (en) | Nonvolatile semiconductor memory device and method for manufacturing same | |
CN117355140A (zh) | 半导体存储器装置及半导体存储器装置的制造方法 | |
US20160268439A1 (en) | Non-volatile memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220210 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right |