CN107251222B - 半导体存储装置 - Google Patents

半导体存储装置 Download PDF

Info

Publication number
CN107251222B
CN107251222B CN201680008338.9A CN201680008338A CN107251222B CN 107251222 B CN107251222 B CN 107251222B CN 201680008338 A CN201680008338 A CN 201680008338A CN 107251222 B CN107251222 B CN 107251222B
Authority
CN
China
Prior art keywords
memory
word line
bit line
fuse
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680008338.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN107251222A (zh
Inventor
葛西秀男
谷口泰弘
川嶋泰彦
樱井良多郎
品川裕
户谷达郎
山口贵德
大和田福夫
吉田信司
畑田辉男
野田敏史
加藤贵文
村谷哲也
奥山幸祐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Floadia Corp
Original Assignee
Floadia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Floadia Corp filed Critical Floadia Corp
Priority to CN202010893535.1A priority Critical patent/CN111987101B/zh
Publication of CN107251222A publication Critical patent/CN107251222A/zh
Application granted granted Critical
Publication of CN107251222B publication Critical patent/CN107251222B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN201680008338.9A 2015-02-25 2016-02-19 半导体存储装置 Active CN107251222B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010893535.1A CN111987101B (zh) 2015-02-25 2016-02-19 反熔丝存储器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015035858A JP6500200B2 (ja) 2015-02-25 2015-02-25 半導体記憶装置
JP2015-035858 2015-02-25
PCT/JP2016/054809 WO2016136604A1 (ja) 2015-02-25 2016-02-19 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010893535.1A Division CN111987101B (zh) 2015-02-25 2016-02-19 反熔丝存储器

Publications (2)

Publication Number Publication Date
CN107251222A CN107251222A (zh) 2017-10-13
CN107251222B true CN107251222B (zh) 2020-09-25

Family

ID=56788525

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201680008338.9A Active CN107251222B (zh) 2015-02-25 2016-02-19 半导体存储装置
CN202010893535.1A Active CN111987101B (zh) 2015-02-25 2016-02-19 反熔丝存储器

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202010893535.1A Active CN111987101B (zh) 2015-02-25 2016-02-19 反熔丝存储器

Country Status (9)

Country Link
US (1) US10074660B2 (https=)
EP (1) EP3264464B1 (https=)
JP (1) JP6500200B2 (https=)
KR (2) KR102483827B1 (https=)
CN (2) CN107251222B (https=)
IL (1) IL254101B (https=)
SG (1) SG11201706892UA (https=)
TW (1) TWI689932B (https=)
WO (1) WO2016136604A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11276697B2 (en) * 2018-04-02 2022-03-15 Intel Corporation Floating body metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements
CN109075153A (zh) * 2018-07-17 2018-12-21 深圳市为通博科技有限责任公司 反熔丝、反熔丝的制造方法以及存储装置
US11456303B2 (en) * 2018-12-27 2022-09-27 Nanya Technology Corporation Fuse array structure
US11094702B1 (en) * 2020-02-10 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. One-time programmable memory device including anti-fuse element and manufacturing method thereof
TWI744130B (zh) * 2020-12-09 2021-10-21 億而得微電子股份有限公司 低成本低電壓反熔絲陣列
CN115206978A (zh) * 2021-04-13 2022-10-18 联华电子股份有限公司 一次性可编程存储单元及其制作方法
US12389593B2 (en) 2021-04-13 2025-08-12 United Microelectronics Corp. One-time programmable memory cell
TWI769095B (zh) * 2021-10-08 2022-06-21 億而得微電子股份有限公司 高寫入效率的反熔絲陣列
CN116093067B (zh) * 2021-11-03 2025-09-05 长鑫存储技术有限公司 熔丝结构、形成方法及可编程存储器
CN116847650A (zh) * 2022-03-22 2023-10-03 长鑫存储技术有限公司 一种半导体结构及其制作方法
KR102819153B1 (ko) * 2022-05-25 2025-06-10 창신 메모리 테크놀로지즈 아이엔씨 안티퓨즈 구조, 안티퓨즈 어레이 및 메모리

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2760026A1 (en) * 2011-09-21 2014-07-30 Floadia Corporation Non-volatile semiconductor memory device
CN104347629A (zh) * 2013-07-24 2015-02-11 中芯国际集成电路制造(上海)有限公司 一种栅控二极管反熔丝单元结构及其制作方法
CN107112326A (zh) * 2014-10-31 2017-08-29 株式会社佛罗迪亚 反熔丝存储器及半导体存储装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763854A (en) * 1980-10-07 1982-04-17 Toshiba Corp Semiconductor device
US6798693B2 (en) 2001-09-18 2004-09-28 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
JP2008047702A (ja) 2006-08-16 2008-02-28 Nec Electronics Corp 半導体記憶装置
US7583554B2 (en) * 2007-03-02 2009-09-01 Freescale Semiconductor, Inc. Integrated circuit fuse array
JP2009147003A (ja) 2007-12-12 2009-07-02 Toshiba Corp 半導体記憶装置
CN101488502A (zh) * 2008-01-18 2009-07-22 恩益禧电子股份有限公司 非易失性半导体存储装置
WO2010026865A1 (en) * 2008-09-05 2010-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
WO2010032599A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101699230B1 (ko) * 2010-08-30 2017-01-25 삼성전자주식회사 안티퓨즈 메모리 셀, 이의 제조 방법, 이를 포함하는 비휘발성 메모리 장치 및 리페어 기능을 갖는 메모리 장치
US8228730B2 (en) * 2010-08-31 2012-07-24 Micron Technology, Inc. Memory cell structures and methods
KR101088954B1 (ko) * 2011-08-26 2011-12-01 권의필 프로그램이 가능한 비휘발성 메모리
KR101144440B1 (ko) * 2012-02-22 2012-05-10 권의필 비휘발성 메모리 및 그 제조방법
KR101731129B1 (ko) * 2012-08-02 2017-04-28 매그나칩 반도체 유한회사 Ｏｔｐ 메모리 셀 및 그 제조 방법
US8817518B2 (en) * 2012-08-31 2014-08-26 SK Hynix Inc. E-fuse array circuit and programming method of the same
CN104240762B (zh) * 2013-06-09 2018-06-01 中芯国际集成电路制造(上海)有限公司 反熔丝结构及编程方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2760026A1 (en) * 2011-09-21 2014-07-30 Floadia Corporation Non-volatile semiconductor memory device
CN104347629A (zh) * 2013-07-24 2015-02-11 中芯国际集成电路制造(上海)有限公司 一种栅控二极管反熔丝单元结构及其制作方法
CN107112326A (zh) * 2014-10-31 2017-08-29 株式会社佛罗迪亚 反熔丝存储器及半导体存储装置

Also Published As

Publication number Publication date
KR102483827B1 (ko) 2023-01-03
KR20230006606A (ko) 2023-01-10
JP6500200B2 (ja) 2019-04-17
CN111987101A (zh) 2020-11-24
EP3264464A1 (en) 2018-01-03
CN111987101B (zh) 2024-08-02
WO2016136604A1 (ja) 2016-09-01
JP2016157873A (ja) 2016-09-01
TW201635302A (zh) 2016-10-01
IL254101B (en) 2022-02-01
IL254101A0 (en) 2017-10-31
EP3264464A4 (en) 2018-10-24
TWI689932B (zh) 2020-04-01
EP3264464B1 (en) 2021-12-22
US20180019248A1 (en) 2018-01-18
US10074660B2 (en) 2018-09-11
KR102522368B1 (ko) 2023-04-18
CN107251222A (zh) 2017-10-13
SG11201706892UA (en) 2017-10-30
KR20170120662A (ko) 2017-10-31

Similar Documents

Publication Publication Date Title
CN107251222B (zh) 半导体存储装置
TWI602282B (zh) 記憶體單元及記憶體陣列
US9196377B1 (en) Anti-fuse type one-time programmable memory cell and anti-fuse type one-time programmable memory cell arrays
US10153288B2 (en) Double metal layout for memory cells of a non-volatile memory
KR102195321B1 (ko) 감지 증폭기 구성물
CN110036484B (zh) 电阻式随机存取存储器单元
US11222923B2 (en) Resistance variable memory
US20150103579A1 (en) Memory device, writing method, and reading method
TW202249255A (zh) 記憶體裝置
US9786382B1 (en) Semiconductor device and memory element
US20150206595A1 (en) Antifuse array architecture
US9111597B2 (en) Memory device structure with decoders in a device level separate from the array level
CN219628265U (zh) 记忆体装置
US9466371B2 (en) Transistor and circuit using same
US20220238540A1 (en) Memory devices and methods of manufacturing thereof
JP4907916B2 (ja) メモリ
US7015553B2 (en) Compact mask programmable ROM
TWI903654B (zh) 反熔絲型一次編程記憶體及其相關偏壓控制方法
US9276581B2 (en) Nonvolatile programmable logic switch
KR20240168246A (ko) 비휘발성 메모리 단위 셀 및 어레이 구조

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20171013

Assignee: Suzhou Tengxin Microelectronics Co.,Ltd.

Assignor: FLOADIA Corp.

Contract record no.: X2022990000142

Denomination of invention: Semiconductor storage device

Granted publication date: 20200925

License type: Exclusive License

Record date: 20220309

EE01 Entry into force of recordation of patent licensing contract