CN107250038B - 多晶硅棒及其制造方法和fz硅单晶 - Google Patents
多晶硅棒及其制造方法和fz硅单晶 Download PDFInfo
- Publication number
- CN107250038B CN107250038B CN201580076377.8A CN201580076377A CN107250038B CN 107250038 B CN107250038 B CN 107250038B CN 201580076377 A CN201580076377 A CN 201580076377A CN 107250038 B CN107250038 B CN 107250038B
- Authority
- CN
- China
- Prior art keywords
- polycrystalline silicon
- silicon rod
- tensile sample
- area
- plate tensile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 126
- 239000013078 crystal Substances 0.000 title claims description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 229910052710 silicon Inorganic materials 0.000 title claims description 29
- 239000010703 silicon Substances 0.000 title claims description 29
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 60
- 239000002994 raw material Substances 0.000 claims description 25
- 238000002441 X-ray diffraction Methods 0.000 claims description 15
- 238000001556 precipitation Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 230000000630 rising effect Effects 0.000 claims 1
- 238000011156 evaluation Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 18
- 229920005591 polysilicon Polymers 0.000 description 17
- 239000012071 phase Substances 0.000 description 9
- 230000008034 disappearance Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 6
- 239000005052 trichlorosilane Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910017488 Cu K Inorganic materials 0.000 description 1
- 229910017541 Cu-K Inorganic materials 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/78—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by stacking-plane distances or stacking sequences
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-030344 | 2015-02-19 | ||
| JP2015030344A JP6314097B2 (ja) | 2015-02-19 | 2015-02-19 | 多結晶シリコン棒 |
| PCT/JP2015/006156 WO2016132411A1 (ja) | 2015-02-19 | 2015-12-10 | 多結晶シリコン棒とその製造方法およびｆｚシリコン単結晶 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107250038A CN107250038A (zh) | 2017-10-13 |
| CN107250038B true CN107250038B (zh) | 2019-11-15 |
Family
ID=56692188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580076377.8A Active CN107250038B (zh) | 2015-02-19 | 2015-12-10 | 多晶硅棒及其制造方法和fz硅单晶 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10343922B2 (ja) |
| EP (1) | EP3260415B1 (ja) |
| JP (1) | JP6314097B2 (ja) |
| CN (1) | CN107250038B (ja) |
| WO (1) | WO2016132411A1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6969917B2 (ja) * | 2017-07-12 | 2021-11-24 | 信越化学工業株式会社 | 多結晶シリコン棒および多結晶シリコン棒の製造方法 |
| JP6951936B2 (ja) | 2017-10-20 | 2021-10-20 | 信越化学工業株式会社 | 多結晶シリコン棒および単結晶シリコンの製造方法 |
| JP7050581B2 (ja) * | 2018-06-04 | 2022-04-08 | 信越化学工業株式会社 | 多結晶シリコンロッドの選別方法 |
| CN110133017B (zh) * | 2019-05-31 | 2022-07-01 | 西安奕斯伟材料科技有限公司 | 多晶硅熔化参数的检测方法、多晶硅、单晶硅及其制造方法 |
| JP2022003004A (ja) | 2020-06-23 | 2022-01-11 | 信越化学工業株式会社 | ポリシリコンロッド及びポリシリコンロッド製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311351A (zh) * | 2007-05-16 | 2008-11-26 | 瓦克化学有限公司 | 用于区域精制的多晶硅棒及其生产方法 |
| CN201864575U (zh) * | 2010-10-12 | 2011-06-15 | 浙江中宁硅业有限公司 | 有效提高硅烷法多晶硅硅棒生长速度的系统 |
| CN104203819A (zh) * | 2012-03-16 | 2014-12-10 | 德山株式会社 | 多晶硅棒 |
| CN104220867A (zh) * | 2012-04-04 | 2014-12-17 | 信越化学工业株式会社 | 多晶硅的晶体取向度评价方法、多晶硅棒的选择方法及单晶硅的制造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999031013A1 (en) * | 1997-12-15 | 1999-06-24 | Advanced Silicon Materials, Inc. | Chemical vapor deposition system for polycrystalline silicon rod production |
| KR101708058B1 (ko) * | 2009-07-15 | 2017-02-17 | 미쓰비시 마테리알 가부시키가이샤 | 다결정 실리콘의 제조 방법, 다결정 실리콘의 제조 장치, 및 다결정 실리콘 |
| JP5655429B2 (ja) | 2009-08-28 | 2015-01-21 | 三菱マテリアル株式会社 | 多結晶シリコンの製造方法、製造装置及び多結晶シリコン |
| DE102010003068A1 (de) * | 2010-03-19 | 2011-09-22 | Wacker Chemie Ag | Verfahren zur Herstellung von rissfreien polykristallinen Siliciumstäben |
| CN103547713B (zh) | 2011-06-02 | 2016-01-20 | 信越化学工业株式会社 | 多晶硅棒的选择方法及单晶硅的制造方法 |
| JP5719282B2 (ja) * | 2011-11-29 | 2015-05-13 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
| JP5696063B2 (ja) * | 2012-02-02 | 2015-04-08 | 信越化学工業株式会社 | 多結晶シリコン棒搬出冶具および多結晶シリコン棒の刈取方法 |
| JP5792658B2 (ja) * | 2012-02-23 | 2015-10-14 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法 |
| JP2014001096A (ja) * | 2012-06-18 | 2014-01-09 | Shin Etsu Chem Co Ltd | 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法 |
| JP5712176B2 (ja) * | 2012-08-06 | 2015-05-07 | 信越化学工業株式会社 | 多結晶シリコン棒の選択方法、多結晶シリコン塊の製造方法、及び、単結晶シリコンの製造方法 |
| JP6038625B2 (ja) * | 2012-12-10 | 2016-12-07 | 株式会社トクヤマ | 多結晶シリコンロッドの製造方法と製造装置 |
| JP5947248B2 (ja) | 2013-06-21 | 2016-07-06 | 信越化学工業株式会社 | 多結晶シリコン棒の選択方法 |
| JP2016041636A (ja) | 2014-08-18 | 2016-03-31 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン棒 |
-
2015
- 2015-02-19 JP JP2015030344A patent/JP6314097B2/ja active Active
- 2015-12-10 WO PCT/JP2015/006156 patent/WO2016132411A1/ja active Application Filing
- 2015-12-10 US US15/548,569 patent/US10343922B2/en active Active
- 2015-12-10 CN CN201580076377.8A patent/CN107250038B/zh active Active
- 2015-12-10 EP EP15882516.6A patent/EP3260415B1/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311351A (zh) * | 2007-05-16 | 2008-11-26 | 瓦克化学有限公司 | 用于区域精制的多晶硅棒及其生产方法 |
| CN201864575U (zh) * | 2010-10-12 | 2011-06-15 | 浙江中宁硅业有限公司 | 有效提高硅烷法多晶硅硅棒生长速度的系统 |
| CN104203819A (zh) * | 2012-03-16 | 2014-12-10 | 德山株式会社 | 多晶硅棒 |
| CN104220867A (zh) * | 2012-04-04 | 2014-12-17 | 信越化学工业株式会社 | 多晶硅的晶体取向度评价方法、多晶硅棒的选择方法及单晶硅的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6314097B2 (ja) | 2018-04-18 |
| WO2016132411A1 (ja) | 2016-08-25 |
| US10343922B2 (en) | 2019-07-09 |
| EP3260415B1 (en) | 2020-03-11 |
| JP2016150885A (ja) | 2016-08-22 |
| EP3260415A4 (en) | 2018-08-22 |
| EP3260415A1 (en) | 2017-12-27 |
| US20180002180A1 (en) | 2018-01-04 |
| CN107250038A (zh) | 2017-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107250038B (zh) | 多晶硅棒及其制造方法和fz硅单晶 | |
| JP5828795B2 (ja) | 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、および単結晶シリコンの製造方法 | |
| JP4814207B2 (ja) | シリコン半導体ウェハを製造する方法及び装置 | |
| US8114215B2 (en) | 2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor | |
| CN104395740A (zh) | 多晶硅的晶体取向度评价方法、多晶硅棒的选择方法、多晶硅棒、多晶硅块以及单晶硅的制造方法 | |
| JP5947248B2 (ja) | 多結晶シリコン棒の選択方法 | |
| JP2022009646A (ja) | 多結晶シリコン棒および多結晶シリコン棒の製造方法 | |
| JP2005015296A (ja) | 単結晶の製造方法及び単結晶 | |
| JP5923463B2 (ja) | 多結晶シリコンの結晶粒径分布の評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法 | |
| JP5969956B2 (ja) | 多結晶シリコンの粒径評価方法および多結晶シリコン棒の選択方法 | |
| JP6951936B2 (ja) | 多結晶シリコン棒および単結晶シリコンの製造方法 | |
| JP4461776B2 (ja) | シリコン単結晶の製造方法 | |
| KR102284506B1 (ko) | 다결정 실리콘, fz 단결정 실리콘, 및 그의 제조 방법 | |
| JP4218460B2 (ja) | 単結晶製造用黒鉛ヒーター及び単結晶製造装置ならびに単結晶製造方法 | |
| JP6345108B2 (ja) | 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、ｆｚ単結晶シリコンの製造方法 | |
| JP7050581B2 (ja) | 多結晶シリコンロッドの選別方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |