CN107154388A - 半导体封装件及其制造方法 - Google Patents

半导体封装件及其制造方法 Download PDF

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Publication number
CN107154388A
CN107154388A CN201710117489.4A CN201710117489A CN107154388A CN 107154388 A CN107154388 A CN 107154388A CN 201710117489 A CN201710117489 A CN 201710117489A CN 107154388 A CN107154388 A CN 107154388A
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China
Prior art keywords
soldered ball
substrate
semiconductor chip
polymeric layer
interconnection substrate
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Granted
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CN201710117489.4A
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CN107154388B (zh
Inventor
金泳龙
朴镇右
任忠彬
闵胤智
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1020160073308A external-priority patent/KR102527153B1/ko
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Publication of CN107154388A publication Critical patent/CN107154388A/zh
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

提供了一种半导体封装件及其制造方法。所述半导体封装件包括：基底；半导体芯片，位于基底上；互连基底，在基底上与半导体芯片分隔开并包括位于其中的导电构件；焊球，位于互连基底上并电连接到导电构件；聚合物层，位于互连基底和半导体芯片上，并且包括通过其暴露焊球的开口；以及聚合物颗粒，位于焊球中，并且包括与聚合物层相同的材料。

Description

半导体封装件及其制造方法
该专利申请要求于2016年3月2日在美国专利商标局提交的系列号62/302,494的美国临时专利申请的权益，并且要求于2016年6月13日在韩国知识产权局提交的第10-2016-0073308号韩国专利申请的优先权的权益，这两个专利申请的全部内容通过引用包含于此。
技术领域
公开的构思涉及一种半导体封装件及其制造方法，更具体地，涉及半导体封装件的焊球及其制造方法。
背景技术
提供半导体封装件以实现将适合于在电子装置中使用的集成电路芯片。通常，在半导体封装件中，半导体芯片安装在印刷电路板(PCB)上，并且键合线或凸块被用于将半导体芯片电连接到印刷电路板。随着电子产业的发展，电子产品越来越需要高性能、高速度和紧凑的尺寸。为了应对这种趋势，已经开发了诸如多个半导体芯片堆叠在单个基底上或一个封装件堆叠在另一封装件上的各种堆叠方法。
发明内容
本发明构思的实施例提供了一种具有提高的可靠性的半导体封装件和制造该半导体封装件的方法。
本发明构思的实施例提供了一种制造半导体封装件的简化的方法。
根据示例性实施例，公开的构思针对一种制造半导体封装件的方法，所述方法包括：在载体基底上设置互连基底；在互连基底上形成第一焊球；在载体基底上设置半导体芯片，半导体芯片与互连基底分隔开；在互连基底和半导体芯片上形成聚合物层，聚合物层覆盖第一焊球；在聚合物层中形成开口以暴露第一焊球。
根据示例性实施例，本公开针对一种半导体封装件，所述半导体封装件包括：基底；半导体芯片，设置在基底上；互连基底，在基底上与半导体芯片分隔开，互连基底包括位于其中的导电构件；焊球，设置在互连基底上并电连接到导电构件；聚合物层，设置在互连基底和半导体芯片上，聚合物层包括通过其暴露焊球的开口；聚合物颗粒，形成在焊球中并包括与聚合物层相同的材料，其中，聚合物颗粒中的至少一些形成在焊球的上半部中。
根据示例性实施例，本公开针对一种制造半导体封装件的方法，所述方法包括：在载体基底上设置互连基底；在互连基底上形成焊料焊盘；在焊料焊盘上形成第一焊料凸块；在载体基底上设置半导体芯片，半导体芯片与互连基底分隔开；在互连基底和半导体芯片上形成聚合物层，聚合物层覆盖第一焊料凸块；在聚合物层中形成开口以暴露第一焊料凸块的一部分，其中，第一焊料凸块设置在焊料焊盘上并接触焊料焊盘。
附图说明
图1A是示出根据示例性实施例的第一封装件的平面图。
图1B至图1F、图1I、图1K和图1M是用于解释根据示例性实施例的制造半导体封装件的方法的剖视图，它们对应于沿图1A的线I-I'截取的剖视图。
图1G和图1H是示出了根据示例性实施例的开口的形成过程的剖视图(对应于图1F的部分II的放大剖视图)。图1J是示出了根据示例性实施例的开口的形成过程的剖视图(对应于图1I的部分II的放大剖视图)。
图1L是示出了根据示例性实施例的开口的形成过程的剖视图(对应于图1K的部分II的放大剖视图)。
图1N是示出了根据示例性实施例的开口的形成过程的剖视图(对应于图1M的部分II的放大剖视图)。
图2A是示出根据示例性实施例的第一封装件的平面图。
图2B至图2H是用于解释根据示例性实施例的制造半导体封装件的方法的剖视图。
图3A是示出根据示例性实施例的第一封装件的平面图。
图3B是沿图3A的线IV-IV'截取的剖视图。
图3C是示出根据示例性实施例的半导体封装件的剖视图。
具体实施方式
在这里描述的装置的各种焊盘(pad)可以是连接到装置的内部布线的导电端子，并且可以在装置的内部布线和/或内部电路与外部源之间传递信号和/或供应电压。例如，半导体芯片的芯片焊盘可以电连接到半导体芯片的集成电路和半导体芯片连接到的装置，并且在半导体芯片的集成电路与半导体芯片连接到的装置之间传递供应电压和/或信号。各种焊盘可以设置在装置的外表面上或者靠近装置的外表面设置，并且通常可以具有平坦的表面区域(经常比其连接到的内部布线的对应的表面区域大)以促进与诸如焊料凸块或焊球的另外的端子和/或外部布线的连接。
如在这里使用的，被描述为“电连接”的项目被配置为使得电信号可以从一个项目传递到另一项目。因此，物理连接到无源电绝缘组件(例如，印刷电路板的半固化(prepreg)层、连接两个器件的电绝缘粘合剂、电绝缘底部填充剂或模塑层等)的无源导电组件(例如，导线、焊盘、内部电线等)不与所述组件电连接。此外，“直接电连接”到彼此的项目通过诸如以导线、焊盘、内部电线、通孔等为例的一个或更多个无源元件电连接。如此，直接电连接的组件不包括通过诸如晶体管或二极管的有源元件电连接的组件。直接电连接的元件可以直接物理连接和直接电连接。
在下文中，将根据示例性实施例描述制造半导体封装件的方法。
图1A是示出根据示例性实施例的第一封装件10的平面图。图1B至图1F、图1I、图1K和图1M是用于解释根据示例性实施例的制造半导体封装件的方法的剖视图。图1B至图1F、图1I、图1K和图1M对应于沿图1A的线I-I'截取的剖视图。图1G和图1H是图1F的部分II的放大剖视图。图1J、图1L和图1N分别是图1I、图1K和图1M的部分II的放大剖视图。
参照图1A和图1B，可以在载体基底100上设置互连基底200。可以设置载体胶层110以将互连基底200粘附到载体基底100上。例如，印刷电路板(PCB)可以用作可通过载体胶层110粘着到载体基底100的互连基底200。互连基底200可以包括基层210和基层210中的导电构件220。基层210可以包括非导电材料(例如，非电传导材料)。例如，基层210可以包括含碳材料(例如，石墨、石墨烯等)、陶瓷或聚合物(例如，尼龙、聚碳酸酯、高密度聚乙烯(HDPE)等)。导电构件220均可以包括第一焊盘221、线图案222和通孔223。可以在载体胶层110上方的互连基底200的底表面200b上设置第一焊盘221。通孔223可以穿透基层210。线图案222可以设置在基层210之间，并且连接到通孔223。导电构件220可以包括铜、镍、铝、金、银、不锈钢或者它们的合金。导电构件220可以具有大约1100℃的熔点。在一些实施例中，导电构件220可以具有大于大约450℃的熔点。
焊料焊盘300可以设置在互连基底200的顶表面200a上，并且可以电连接到通孔223中的一个。焊料焊盘300可以包括铜、镍、铝、金、银、不锈钢或它们的合金。焊料焊盘300可以具有高熔点。例如，焊料焊盘300可以具有大约1100℃的熔点。在一些实施例中，焊料焊盘300可以具有大于大约450℃的熔点。
可以在互连基底200的顶表面200a上形成掩模图案150。掩模图案150可以包括通过其暴露焊料焊盘300的掩模开口151。
可以在焊料焊盘300上形成可以是例如焊球(诸如第一焊球SB1)的焊料凸块，因此第一焊球SB1可以电连接到导电构件220。例如，可以在掩模开口151中的焊料焊盘300上设置焊膏(未示出)。可以对焊膏进行回流，使得可以在掩模开口151中的焊料焊盘300上形成第一焊球SB1。可以在低于导电构件220和焊料焊盘300的熔点的温度下形成第一焊球SB1。例如，可以在低于大约450℃的温度下形成第一焊球SB1。在一些实施例中，可以在从大约170℃至大约230℃的温度下形成第一焊球SB1。焊料焊盘300可以因此在第一焊球SB1的形成期间处于固态而不熔化。第一焊球SB1可以具有低于大约450℃的熔点。在一些实施例中，第一焊球SB1可以具有从大约170℃至大约230℃的熔点。第一焊球SB1可以包括例如锡(Sn)、铅(Pb)、铟(In)或它们的合金。在对焊膏进行回流之后，第一焊球SB1可以在室温(例如，大约15℃至大约25℃)下放置并且可以处于固态。可以去除掩模图案150。
参照图1A和图1C，可以在互连基底200中形成孔290。例如，可以部分地去除互连基底200以形成孔290。当在平面图中观察时，可以在互连基底200的中心部分上形成孔290。
参照图1A和图1D，可以在载体基底100上设置第一半导体芯片400和第一聚合物层500。第一半导体芯片400可以设置在互连基底200的孔290中，当在平面图中观察时，可以沿它的周边被互连基底200围绕。在一些实施例中，在第一半导体芯片400与围绕的互连基底200之间可以存在间隙。第一半导体芯片400可以包括在其底表面上的一个或更多个芯片焊盘410。
可以在互连基底200和第一半导体芯片400上形成第一聚合物层500。第一聚合物层500可以覆盖第一焊球SB1。可以在互连基底200与第一半导体芯片400之间的间隙中设置第一聚合物层500。第一聚合物层500可以包括诸如以环氧类聚合物为例的绝缘聚合物。第一聚合物层500可以用作模塑层。例如，可以使用聚合物片来形成第一聚合物层500，但是实施例不限于此。此后，可以去除载体基底100和载体胶层110以暴露第一半导体芯片400的底表面和互连基底200的底表面200b，以及设置在互连基底200与第一半导体芯片400之间的间隙中的第一聚合物层500的底表面。
参照图1A和图1E，可以在第一半导体芯片400的底表面和互连基底200的底表面200b上形成绝缘图案610以及再分布构件621和622，从而形成第一基底600。第一基底600可以是再分布基底。再分布构件621和622可以包括设置在绝缘图案610之间的导电图案621和穿透绝缘图案610的导电通孔622。再分布构件621和622可以包括诸如铜或铝的金属，并且可以具有大约1100℃的熔点。在一些实施例中，再分布构件621和622可以具有大于大约450℃的熔点。再分布构件621和622可以与第一半导体芯片400的芯片焊盘410和互连基底200的第一焊盘221接触。可以在第一基底600的底表面上形成保护层630。保护层630可以包括绝缘材料。例如，保护层630可以包括与第一聚合物层500相同的材料。可选择地，可以省略保护层630。在一些实施例中，因为再分布基底被用作第一基底600，所以第一基底600可以具有小的厚度。
参照图1A和图1F，可以在第一聚合物层500中形成开口550，因此第一焊球SB1可以通过开口550暴露。在一些实施例中，可以通过在第一聚合物层500中形成的开口550暴露第一焊球SB1的一部分。例如，可以执行钻孔工艺来去除第一聚合物层500，使得可以形成开口550。在一些实施例中，可以使用激光钻孔来执行钻孔工艺。在下文中，可以参照图1G和图1H来进一步详细地讨论开口550的形成。应该注意的是，尽管在此示例中仅讨论一个开口550，但是如图1F所示，可以形成多个开口。
图1G和图1H是示出了根据示例性实施例的开口550的形成过程的剖视图(对应于图1F的部分II的放大剖视图)。
参照图1G，开口550可以将第一焊球SB1暴露到空气，因此可以在第一焊球SB1上形成氧化物层700。图1D的第一聚合物层500的形成可以在氧化物层700的形成之后，或者图1F的开口550的形成可以在氧化物层700的形成之前。尽管未示出，但在一些实施例中，还可以在第一焊球SB1与第一聚合物层500之间设置氧化物层700。氧化物层700可以具有各种形状和厚度，并且不限于示出的那些。在开口550的形成中，第一聚合物层500的一部分可以不被去除，而是可以保留以形成第一焊球SB1上的剩余物501。剩余物501可以设置在第一焊球SB1上并且可以覆盖氧化物层700。可选择地，在一些实施例中，可以在剩余物501与第一焊球SB1之间不设置氧化物层700。剩余物501可以具有各种形状，并且不限于所示出的。剩余物501可以包括与第一聚合物层500相同的材料。
在开口550的形成之后形成图1F中的第一焊球SB1的情况下，开口550可以暴露焊料焊盘300，第一聚合物层500的剩余物可以设置在焊料焊盘300上。因为焊料焊盘300具有高熔点，所以焊料焊盘300可以不被钻孔工艺产生的热熔化，而是可以保持固态。第一聚合物层500的剩余物可以因此形成覆盖焊料焊盘300的层(未示出)。在此示例中，可以在第一聚合物层500的剩余物上形成第一焊球SB1。因为在低于焊料焊盘300的熔点的温度下执行第一焊球SB1的形成，所以第一聚合物层500的剩余物可以保留在焊料焊盘300与第一焊球SB1之间。在这样的情况下，焊料焊盘300与第一焊球SB1之间会实现不好的电特性。如果实施去除工艺以去除焊料焊盘300上的第一聚合物层500的剩余物，则会增加用于半导体封装件的工艺步骤的数量。另外，焊料焊盘300和/或第一聚合物层500会在用于去除第一聚合物层500的剩余物的去除工艺中遭受损坏。
在一些实施例中，当第一焊球SB1的形成在开口550的形成之前时，可以不在焊料焊盘300上形成剩余物501。第一焊球SB1可以因此满意地连接到焊料焊盘300，允许第一焊球SB1与焊料焊盘300之间的良好的电连接。
顺序地参照图1G和1H，钻孔工艺会产生热。热会传递到第一焊球SB1。因为第一焊球SB1具有相对低的熔点，所以热会使第一焊球SB1的至少一部分熔化。例如，第一焊球SB1的上部可以熔化为液态。剩余物501可以如图1G中箭头所指示地流入第一焊球SB1中，使得可以如图1H中所示形成聚合物颗粒502。氧化物层700可以几乎不影响剩余物501的流入，允许剩余物501基本上顺畅地流入第一焊球SB1中。聚合物颗粒502可以分散在第一焊球SB1中。聚合物颗粒502可以具有诸如以圆形或椭圆形为例的各种形状。例如，聚合物颗粒502可以具有小于大约2μm的平均直径。在一些实施例中，聚合物颗粒502可以具有小于大约1μm的平均直径。在钻孔工艺之后，可以在室温下(例如，大约15℃至大约25℃)放置第一焊球SB1，第一焊球SB1的熔化的部分可以变为固态。在一些实施例中，第一焊球SB1可以在其上具有剩余物501的未流入第一焊球SB1中的部分。可选择地，在其他实施例中，可以没有保留在第一焊球SB1上的剩余物501。
如图1H中所示，在一些实施例中，当形成开口550时，聚合物颗粒502可以形成在第一焊球SB1上并分散在第一焊球SB1中。分散在第一焊球SB1中的聚合物颗粒502可以在第一焊球SB1的底部上方。例如，形成在第一焊球SB1中的聚合物颗粒502的至少一些可以位于第一焊球SB1的上半部中，聚合物颗粒502的至少一些可以位于第一焊球SB1的中部中。例如，形成在第一焊球SB1中的聚合物颗粒502可以不位于第一焊球SB1的底部中。
回到图1F，可以在第一基底600的底表面上形成外端子650。例如，可以在保护层630中形成下开口631，因此可以通过下开口631暴露再分布构件621和622。外端子650可以形成在下开口631中并连接到再分布构件621和622。外端子650可以包括金属并且具有焊球的形状。每个外端子650可以通过再分布构件621和622以及导电构件220电连接到第一焊球SB1。外端子650可以在第三方向D3上不与第一焊球SB1对齐。例如，当从平面图(例如，第三方向D3)观察时，外端子650可以从第一焊球SB1偏移。外端子650的数量可以与焊料焊盘300的数量不同。通过前述的示例，可以制造第一封装件10。可以以晶圆级工艺来制造第一封装件10。
参照1A、图1I和图1J，可以通过在第一焊球SB1上执行清洗工艺来去除图1G和图1H中示出的氧化物层700。可以使用助焊剂溶液(flux solution)执行清洗工艺。例如，助焊剂溶液可以包括卤素元素。在此步骤中，还可以将剩余物501与氧化物层700一起去除。因为不执行单独的工艺以去除剩余物501，所以可以简化第一封装件10的制造。在完成清洗工艺后，在一些实施例中，剩余物501的一部分不会被去除而会保留在第一焊球SB1上。可选择地，在其他实施例中，当清洗工艺结束后，没有保留在第一焊球SB1上的剩余物501。
参照图1K和图1L，可以在第一封装件10上设置第二封装件20。第二封装件20可以包括第二基底800、第二半导体芯片810和模塑层820。第二基底800可以是印刷电路板或再分布基底。第二半导体芯片810可以设置在第二基底800上并且可以通过例如键合线811电连接到第二基底800。第二半导体芯片800可以具有各种数量、安装方法、布置和构成元件和/或特征。可以在第二基底800的底表面上设置第二焊球SB2。第二焊球SB2可以电连接到第二半导体芯片810。第二基底800中的虚线可以大致表示其电连接的示例。可以在第一封装件10上设置第二封装件20，从而使第二焊球SB2与第一焊球SB1对齐。
参照图1M和图1N以及图1L，可以执行回流工艺以使第二焊球SB2结合到或接合到第一焊球SB1，使得可以在第一半导体封装件1中形成互连焊料SB。可以在焊料焊盘300与第二基底800之间形成互连焊料SB。可以在等于或大于第一焊球SB1和第二焊球SB2的熔点并小于导电构件220和焊料焊盘300的熔点的温度下执行回流工艺。例如，可以在小于大约450℃的温度下执行回流工艺。在一些实施例中，可以在从大约170℃至大约230℃的温度下执行回流工艺。导电构件220和焊料焊盘300可以在回流工艺中不被熔化，而可以保持固体形式。导电构件220和焊料焊盘300可以在回流工艺中不遭受损坏。
尽管剩余物501的一部分在回流工艺中保留在第一焊球SB1上，但是剩余物501可以如图1G和1L中所示流入互连焊料SB中，并且可以如图1M和图1N中所示在互连焊料SB中形成聚合物颗粒502。聚合物颗粒502可以分散在互连焊料SB中，使得聚合物颗粒502可以几乎不影响互连焊料SB的电特性。因此，可以通过互连焊料SB将第二封装件20满意地电连接到第一封装件10。第一半导体封装件1可以具有增强的可靠性。在一些实施例中，可以在回流工艺之前执行图1I和图1J的清洗工艺，可以在回流工艺中有利地减少保留的剩余物501。因此，可以使第二焊球SB2满意地连接到第一焊球SB1，第一半导体封装件1可以具有增强的可靠性。
图2A是示出根据示例性实施例的第一封装件的平面图。图2B至图2H是用于解释根据示例性实施例的制造半导体封装件的方法的剖视图。图2B至图2E对应于沿图2A的线III-III'截取的剖视图。将在下面省略与前述重复的描述。
参照图2A和图2B，可以在载体基底100上设置互连基底200、第一半导体芯片400和第一聚合物层500。参照图1B至图1D提供的描述也可以应用于形成互连基底200、第一半导体芯片400和第一聚合物层500。多个第二焊盘240可以设置在互连基底200的顶表面200a上，并且可以电连接到通孔223。可以在互连基底200和第一半导体芯片400上形成第一聚合物层500。
可以在第一聚合物层500中形成互连通孔900。互连通孔900可以设置在第二焊盘240上并且连接到第二焊盘240。例如，每个第二焊盘240可以连接到互连通孔900中对应的一个。互连通孔900可以包括铜、镍、铝、金、银、不锈钢或它们的合金。互连通孔900可以具有大约1100℃的熔点。在一些实施例中，互连通孔900可以具有大于大约450℃的熔点。
可以在第一聚合物层500上形成互连图案910和多个焊料焊盘300'。互连图案910可以沿第一聚合物层500的顶表面延伸，并且可以电连接到互连通孔900和焊料焊盘300'。焊料焊盘300'可以通过互连图案910电连接到互连通孔900。焊料焊盘300'的至少一个可以在第三方向D3上与其连接的导电构件220不对齐。互连基底200的底表面200b可以平行于可彼此相交且垂直的第一方向D1和第二方向D2。第三方向D3可以垂直于第一方向D1和第二方向D2。可以在第一半导体芯片400上与互连基底200上形成焊料焊盘300'。因为设置了互连图案910，所以焊料焊盘300'可以具有提高的布置自由度。例如，互连图案910的提供可以允许焊料焊盘300'的各种布置。焊料焊盘300'和互连图案910可以包括铜、镍、铝、金、银、不锈钢或它们的合金。焊料焊盘300'和互连图案910均可以具有大约1000℃的熔点。在一些实施例中，焊料焊盘300'和互连图案910均可以具有大于大约450℃的熔点。
可以将第一焊球SB1设置为多个(即，多个第一焊球SB1)。可以在焊料焊盘300'上形成第一焊球SB1。可以通过与结合图1B讨论的工艺基本相同的工艺来形成第一焊球SB1。第一焊球SB1可以具有与图1B中讨论的实施例的熔点和材料相同的熔点和材料。第一焊球SB1可以电连接到焊料焊盘300'。例如，每个第一焊球SB1可以电连接到焊料焊盘300'中对应的一个。可以在第一半导体芯片400上和互连基底200上形成第一焊球SB1。
参照图2A和图2C，第二聚合物层510可以形成在第一聚合物层500上，并且可以覆盖第一焊球SB1和互连图案910。第二聚合物层510可以包括诸如以环氧类聚合物为例的绝缘的聚合物。第二聚合物层510可以是模塑层，但是第二聚合物层510可以不限于此。此后，可以去除载体基底100和载体胶层110以暴露第一半导体芯片400的底表面和互连基底200的底表面200b。
参照图2A和图2D，可以在第一半导体芯片400的底表面和互连基底200的底表面200b上形成绝缘图案610以及再分布构件621和622，从而形成第一基底600。在一些实施例中，可以在第一基底600的底表面上形成保护层630。可选择地，在其他实施例中，可以不形成保护层630。
参照图2A和图2E以及图1G和图1H，可以执行钻孔工艺(例如，激光钻孔)以在第二聚合物层510中形成多个开口550'。开口550'可以分别暴露第一焊球SB1。例如，每个开口550'可以暴露第一焊球SB1中对应的一个的一部分。当去除第二聚合物层510时，可以在第一焊球SB1上形成第二聚合物层510的剩余物501'。第一焊球SB1可以因由钻孔工艺产生的热而熔化，剩余物501'可以流入第一焊球SB1中以形成聚合物颗粒502'。在钻孔工艺之后，部分剩余物501'可以保留在第一焊球SB1上。可以在第一基底600的底表面上形成外端子650，因此可以制造第一封装件11。
参照图2A和2F以及图1J，可以通过在第一焊球SB1上执行清洗工艺来去除剩余物501'。在此步骤中，可以将第一焊球SB1的图1H的氧化物层700与剩余物501'一起去除。部分剩余物501'可以不被去除而保留在第一焊球SB1上。
参照图2A和图2G，可以在第一封装件11上设置第二封装件21，以使第二焊球SB2与第一焊球SB1对齐。因为在第一半导体芯片400上设置第一焊球SB1，所以第二焊球SB2和第二基底800中的电路图案(未示出)可以具有提高的布置自由度。
在一些实施例中，可以设置凸块812以将第二半导体芯片810以倒装芯片的方式安装在第二基底800上。可选择地，在其他实施例中，第二半导体芯片810可以直接结合到第二基底800上。例如，可以省略凸块812，使得第二半导体芯片810的芯片焊盘813可以接触设置在第二基底800的顶表面上的焊盘803。第三半导体芯片815可以堆叠在第二半导体芯片810上，并且可以通过形成在第二半导体芯片810中的通孔814电连接到第二基底800。可以各种各样地改变半导体芯片810和815的数量、布置和安装方法。
参照图2A和图2H，可以执行回流工艺以使第二焊球SB2结合到第一焊球SB1，使得可以形成多个互连焊料SB。尽管图2F的剩余物501'部分地保留在第一焊球SB1上，但是剩余物501'可以在回流工艺中流入互连焊料SB中，因此可以在互连焊料SB中形成聚合物颗粒502'，如结合图1N所讨论的。因为聚合物颗粒502'分散在互连焊料SB中，所以聚合物颗粒502'不会使半导体封装件2的电特性劣化。
图3A是示出根据示例性实施例的第一封装件的平面图。图3B是沿图3A的线IV-IV'截取的剖视图。
参照图3A和图3B，第一封装件12可以包括第一基底600、第一半导体芯片400、第一聚合物层500、焊料焊盘300和第一焊球SB1。第一封装件12还可以包括互连基底201，互连基底201的结构特征与参照图1A和图1F讨论的互连基底200的结构特征不同。随后将详细讨论互连基底201。参照图1B至图1F的解释也可以基本上等同地应用于形成第一基底600、第一半导体芯片400、焊料焊盘300和第一焊球SB1。
可以将互连基底201设置为多个(例如，多个互连基底201)。如图3A中所示，互连基底201可以围绕第一半导体芯片400。如图3B中所示，每个互连基底201可以包括基层210和导电构件220。与结合图1A和图1F描述的互连基底200不同，在一些实施例中，可以将基层210设置为单个(例如，一个基层210)，并且可以省略线图案222。通孔223可以穿透基层210，并且可以分别接触第一焊盘221和焊料焊盘300。例如，每个通孔223可以直接与第一焊盘221中对应的一个和焊料焊盘300中对应的一个接触。
可以在第一焊球SB1中形成聚合物颗粒502。如图1H中所讨论的，聚合物颗粒502可以是第一聚合物层500的在形成开口550时形成的剩余物。聚合物颗粒502可以包括与第一聚合物层500相同的材料。在一些实施例中，可以在第一焊球SB1上设置剩余物501。可选择地，在其他实施例中，可以不设置剩余物501。
图3C是示出根据示例性实施例的半导体封装件的剖视图。将在下文中省略与前述重复的描述。
参照图3C，可以通过将第二封装件20安装在图3A和图3B的第一封装件12上来制造半导体封装件3。可以通过与结合图1K和图1M讨论的方法基本相同的方法来将第二封装件20安装在第一封装件12上。例如，可以执行回流工艺以将第二焊球SB2结合或接合到第一焊球SB1，使得可以形成互连焊料SB。在将第二封装件20安装在第一封装件12上之前，可以在第一焊球SB1上执行清洗工艺以去除剩余物501。
根据某些公开的实施例，可以在聚合物层中形成开口之前形成第一焊球。由于第一焊球的低熔点，聚合物层的剩余物可以在开口的形成过程中流入第一焊球中，使得可以形成聚合物颗粒。聚合物层的剩余物还可以在回流工艺中流入第一焊球或互连焊料中。聚合物颗粒可以分散在第一焊球中。因此，聚合物颗粒对第一焊球或互连焊料的电特性可以有最小的影响。可以在第一焊球上执行清洗工艺以有效地去除聚合物层的剩余物。半导体封装件因此可以具有增强的可靠性。
尽管已经结合附图中示出的实施例描述了本构思，但是其不限于此。对于本领域的技术人员将明显的是，在不脱离发明的范围和精神的情况下，可以对其作出各种替代、修改和变化。

Claims (20)

1.一种制造半导体封装件的方法，所述方法包括：
在载体基底上设置互连基底；
在互连基底上形成第一焊球；
在载体基底上设置半导体芯片，半导体芯片与互连基底分隔开；
在互连基底和半导体芯片上形成聚合物层，聚合物层覆盖第一焊球；以及
在聚合物层中形成开口以暴露第一焊球。
2.根据权利要求1所述的方法，所述方法还包括：
在互连基底上形成焊料焊盘，
其中，第一焊球设置在焊料焊盘上并接触焊料焊盘，
其中，第一焊球的熔点低于焊料焊盘的熔点。
3.根据权利要求1所述的方法，所述方法还包括：
在第一焊球中形成聚合物颗粒，
其中，聚合物颗粒包括与聚合物层相同的材料。
4.根据权利要求3所述的方法，其中，在形成开口时形成聚合物颗粒。
5.根据权利要求1所述的方法，其中，形成开口的步骤包括：
通过激光钻孔去除聚合物层的一部分。
6.根据权利要求1所述的方法，所述方法还包括：
设置第二封装件，所述第二封装件包括在其底表面上的第二焊球；
对第一焊球和第二焊球进行回流。
7.根据权利要求6所述的方法，其中，当形成开口时在第一焊球上设置聚合物层的剩余物，
其中，所述方法还包括：在回流之前，使用助焊剂溶液在第一焊球上执行清洗工艺以去除聚合物层的剩余物。
8.根据权利要求1所述的方法，其中，设置互连基底的步骤包括：
设置基层和基层中的导电构件，
其中，第一焊球电连接到导电构件。
9.根据权利要求1所述的方法，所述方法还包括：
去除载体基底以暴露半导体芯片的底表面和互连基底的底表面；以及
在半导体芯片的底表面和互连基底的底表面上形成再分布基底。
10.一种半导体封装件，所述半导体封装件包括：
基底；
半导体芯片，设置在基底上；
互连基底，在基底上与半导体芯片分隔开，互连基底包括位于其中的导电构件；
焊球，设置在互连基底上并电连接到导电构件；
聚合物层，设置在互连基底和半导体芯片上，聚合物层包括通过其暴露焊球的开口；以及
聚合物颗粒，形成在焊球中并包括与聚合物层相同的材料，
其中，聚合物颗粒中的至少一些形成在焊球的上半部中。
11.根据权利要求10所述的半导体封装件，所述半导体封装件还包括：
焊料焊盘，设置在互连基底与焊球之间，
其中，焊球的熔点低于焊料焊盘的熔点。
12.根据权利要求10所述的半导体封装件，所述半导体封装件还包括：
剩余物，形成在焊球上，
其中，剩余物包括与聚合物层相同的材料。
13.根据权利要求10所述的半导体封装件，其中，聚合物层设置在半导体芯片与互连基底之间的间隙中。
14.根据权利要求10所述的半导体封装件，其中，
互连基底包括穿透其内部的孔，以及
半导体芯片设置在互连基底的孔中。
15.根据权利要求10所述的半导体封装件，其中，焊球的熔点低于导电构件的熔点。
16.一种制造半导体封装件的方法，所述方法包括：
在载体基底上设置互连基底；
在互连基底上形成焊料焊盘；
在焊料焊盘上形成第一焊料凸块；
在载体基底上设置半导体芯片，半导体芯片与互连基底分隔开；
在互连基底和半导体芯片上形成聚合物层，聚合物层覆盖第一焊料凸块；以及
在聚合物层中形成开口以暴露第一焊料凸块的一部分，
其中，第一焊料凸块设置在焊料焊盘上并接触焊料焊盘。
17.根据权利要求16所述的方法，所述方法还包括：
在第一焊料凸块中形成聚合物颗粒，
其中，聚合物颗粒包括与聚合物层相同的材料。
18.根据权利要求16所述的方法，所述方法还包括：
设置第二封装件，所述第二封装件包括在其底表面上的第二焊料凸块；以及
通过对第一焊料凸块和第二焊料凸块进行回流来形成回流互连焊料。
19.根据权利要求18所述的方法，所述方法还包括：
在形成回流互连焊料之前，在第一焊料凸块上执行清洗工艺以去除聚合物层的在形成开口时设置在第一焊料凸块上的剩余物。
20.根据权利要求16所述的方法，其中，设置互连基底的步骤包括：
设置包括导电构件的基层，
其中，第一焊料凸块电连接到导电构件。
CN201710117489.4A 2016-03-02 2017-03-01 半导体封装件及其制造方法 Active CN107154388B (zh)

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