CN107112242B - 电子器件用外延基板、电子器件、电子器件用外延基板的制造方法及电子器件的制造方法 - Google Patents

电子器件用外延基板、电子器件、电子器件用外延基板的制造方法及电子器件的制造方法 Download PDF

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CN107112242B
CN107112242B CN201580072647.8A CN201580072647A CN107112242B CN 107112242 B CN107112242 B CN 107112242B CN 201580072647 A CN201580072647 A CN 201580072647A CN 107112242 B CN107112242 B CN 107112242B
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layer
electronic device
epitaxial substrate
aln initial
buffer layer
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CN107112242A (zh
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萩本和德
篠宫胜
土屋庆太郎
后藤博一
佐藤宪
鹿内洋志
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Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
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Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3256—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
CN201580072647.8A 2015-01-08 2015-12-18 电子器件用外延基板、电子器件、电子器件用外延基板的制造方法及电子器件的制造方法 Active CN107112242B (zh)

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Application Number Priority Date Filing Date Title
JP2015-002047 2015-01-08
JP2015002047A JP6261523B2 (ja) 2015-01-08 2015-01-08 電子デバイス用エピタキシャル基板の製造方法、並びに電子デバイスの製造方法
PCT/JP2015/006313 WO2016110906A1 (ja) 2015-01-08 2015-12-18 電子デバイス用エピタキシャル基板、電子デバイス、電子デバイス用エピタキシャル基板の製造方法、並びに電子デバイスの製造方法

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CN107112242A CN107112242A (zh) 2017-08-29
CN107112242B true CN107112242B (zh) 2020-11-13

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US (1) US10115589B2 (enExample)
JP (1) JP6261523B2 (enExample)
KR (1) KR20170101932A (enExample)
CN (1) CN107112242B (enExample)
TW (1) TWI624879B (enExample)
WO (1) WO2016110906A1 (enExample)

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JP6239017B2 (ja) * 2015-03-31 2017-11-29 クアーズテック株式会社 窒化物半導体基板
TWI645454B (zh) * 2017-03-31 2018-12-21 環球晶圓股份有限公司 磊晶基板及其製造方法
US11316041B2 (en) 2017-11-20 2022-04-26 Rohm Co., Ltd. Semiconductor device
JP2019125737A (ja) * 2018-01-18 2019-07-25 株式会社サイオクス 窒化物半導体エピタキシャル基板
US11515408B2 (en) 2020-03-02 2022-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Rough buffer layer for group III-V devices on silicon
US20220122838A1 (en) * 2020-10-21 2022-04-21 University Of South Carolina Approaches for Fabricating N-Polar AlxGa1-xN Templates for Electronic and Optoelectronic Devices
WO2022205469A1 (en) * 2021-04-02 2022-10-06 Innoscience (Suzhou) Technology Co., Ltd. Iii nitride semiconductor wafers

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JP2008078613A (ja) * 2006-08-24 2008-04-03 Rohm Co Ltd 窒化物半導体の製造方法及び窒化物半導体素子
JP4677499B2 (ja) * 2008-12-15 2011-04-27 Ｄｏｗａエレクトロニクス株式会社 電子デバイス用エピタキシャル基板およびその製造方法
JP2011023677A (ja) * 2009-07-21 2011-02-03 Hitachi Cable Ltd 化合物半導体エピタキシャルウェハおよびその製造方法
WO2011016304A1 (ja) 2009-08-07 2011-02-10 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子用エピタキシャル基板の製造方法、および半導体素子
JP5378128B2 (ja) 2009-09-18 2013-12-25 Ｄｏｗａエレクトロニクス株式会社 電子デバイス用エピタキシャル基板およびｉｉｉ族窒化物電子デバイス用エピタキシャル基板
JP5625336B2 (ja) * 2009-11-30 2014-11-19 サンケン電気株式会社 半導体装置
US9006865B2 (en) * 2010-06-25 2015-04-14 Dowa Electronics Materials Co., Ltd. Epitaxial growth substrate, semiconductor device, and epitaxial growth method
EP2601688B1 (en) * 2010-08-07 2020-01-22 Tpk Holding Co., Ltd Device components with surface-embedded additives and related manufacturing methods
JP5891650B2 (ja) * 2011-08-18 2016-03-23 富士通株式会社 化合物半導体装置及びその製造方法
JP6035721B2 (ja) * 2011-09-27 2016-11-30 住友電気工業株式会社 半導体装置の製造方法
JP6130995B2 (ja) * 2012-02-20 2017-05-17 サンケン電気株式会社 エピタキシャル基板及び半導体装置
JP6152700B2 (ja) * 2013-05-23 2017-06-28 住友電気工業株式会社 半導体装置の製造方法
TWI523222B (zh) * 2013-10-14 2016-02-21 國立交通大學 含氮化鎵之半導體結構
KR102145205B1 (ko) * 2014-04-25 2020-08-19 삼성전자주식회사 반도체 소자 제조방법 및 증착 장치의 유지보수방법
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JP2016127223A (ja) 2016-07-11
JP6261523B2 (ja) 2018-01-17
US10115589B2 (en) 2018-10-30
KR20170101932A (ko) 2017-09-06
TW201635394A (zh) 2016-10-01
US20170352537A1 (en) 2017-12-07
CN107112242A (zh) 2017-08-29
WO2016110906A1 (ja) 2016-07-14
TWI624879B (zh) 2018-05-21

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