TWI624879B - Epitaxial substrate for electronic component, electronic component, method for producing epitaxial substrate for electronic component, and method for manufacturing electronic component - Google Patents

Epitaxial substrate for electronic component, electronic component, method for producing epitaxial substrate for electronic component, and method for manufacturing electronic component Download PDF

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Publication number
TWI624879B
TWI624879B TW104144060A TW104144060A TWI624879B TW I624879 B TWI624879 B TW I624879B TW 104144060 A TW104144060 A TW 104144060A TW 104144060 A TW104144060 A TW 104144060A TW I624879 B TWI624879 B TW I624879B
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TW
Taiwan
Prior art keywords
layer
electronic component
aln
initial
roughness
Prior art date
Application number
TW104144060A
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English (en)
Chinese (zh)
Other versions
TW201635394A (zh
Inventor
Kazunori Hagimoto
Masaru Shinomiya
Keitaro Tsuchiya
Hirokazu Goto
Ken Sato
Hiroshi Shikauchi
Original Assignee
Shin Etsu Handotai Co Ltd
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd, Sanken Electric Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of TW201635394A publication Critical patent/TW201635394A/zh
Application granted granted Critical
Publication of TWI624879B publication Critical patent/TWI624879B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0503—13th Group
    • H01L2924/05032—AlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10323—Aluminium nitride [AlN]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
TW104144060A 2015-01-08 2015-12-28 Epitaxial substrate for electronic component, electronic component, method for producing epitaxial substrate for electronic component, and method for manufacturing electronic component TWI624879B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015002047A JP6261523B2 (ja) 2015-01-08 2015-01-08 電子デバイス用エピタキシャル基板の製造方法、並びに電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
TW201635394A TW201635394A (zh) 2016-10-01
TWI624879B true TWI624879B (zh) 2018-05-21

Family

ID=56355636

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104144060A TWI624879B (zh) 2015-01-08 2015-12-28 Epitaxial substrate for electronic component, electronic component, method for producing epitaxial substrate for electronic component, and method for manufacturing electronic component

Country Status (6)

Country Link
US (1) US10115589B2 (enExample)
JP (1) JP6261523B2 (enExample)
KR (1) KR20170101932A (enExample)
CN (1) CN107112242B (enExample)
TW (1) TWI624879B (enExample)
WO (1) WO2016110906A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239017B2 (ja) * 2015-03-31 2017-11-29 クアーズテック株式会社 窒化物半導体基板
TWI645454B (zh) * 2017-03-31 2018-12-21 環球晶圓股份有限公司 磊晶基板及其製造方法
CN111373513B (zh) 2017-11-20 2023-10-13 罗姆股份有限公司 半导体装置
JP2019125737A (ja) * 2018-01-18 2019-07-25 株式会社サイオクス 窒化物半導体エピタキシャル基板
US11515408B2 (en) 2020-03-02 2022-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Rough buffer layer for group III-V devices on silicon
CN114080692A (zh) * 2021-04-02 2022-02-22 英诺赛科(苏州)科技有限公司 三族氮基半导体晶圆

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011016304A1 (ja) * 2009-08-07 2011-02-10 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子用エピタキシャル基板の製造方法、および半導体素子
JP2011114267A (ja) * 2009-11-30 2011-06-09 Sanken Electric Co Ltd 半導体装置
JP2013042032A (ja) * 2011-08-18 2013-02-28 Fujitsu Ltd 化合物半導体装置及びその製造方法

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JP2008078613A (ja) * 2006-08-24 2008-04-03 Rohm Co Ltd 窒化物半導体の製造方法及び窒化物半導体素子
JP4677499B2 (ja) * 2008-12-15 2011-04-27 Ｄｏｗａエレクトロニクス株式会社 電子デバイス用エピタキシャル基板およびその製造方法
JP2011023677A (ja) * 2009-07-21 2011-02-03 Hitachi Cable Ltd 化合物半導体エピタキシャルウェハおよびその製造方法
JP5378128B2 (ja) 2009-09-18 2013-12-25 Ｄｏｗａエレクトロニクス株式会社 電子デバイス用エピタキシャル基板およびｉｉｉ族窒化物電子デバイス用エピタキシャル基板
WO2011161975A1 (ja) * 2010-06-25 2011-12-29 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法
KR101820327B1 (ko) * 2010-08-07 2018-01-19 티피케이 홀딩 컴퍼니 리미티드 표면 매립 첨가제를 가진 디바이스 콤포넌트 및 이와 관련된 제조 방법
JP6035721B2 (ja) * 2011-09-27 2016-11-30 住友電気工業株式会社 半導体装置の製造方法
JP6130995B2 (ja) * 2012-02-20 2017-05-17 サンケン電気株式会社 エピタキシャル基板及び半導体装置
JP6152700B2 (ja) * 2013-05-23 2017-06-28 住友電気工業株式会社 半導体装置の製造方法
TWI523222B (zh) * 2013-10-14 2016-02-21 國立交通大學 含氮化鎵之半導體結構
KR102145205B1 (ko) * 2014-04-25 2020-08-19 삼성전자주식회사 반도체 소자 제조방법 및 증착 장치의 유지보수방법
US9337023B1 (en) * 2014-12-15 2016-05-10 Texas Instruments Incorporated Buffer stack for group IIIA-N devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011016304A1 (ja) * 2009-08-07 2011-02-10 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子用エピタキシャル基板の製造方法、および半導体素子
JP2011114267A (ja) * 2009-11-30 2011-06-09 Sanken Electric Co Ltd 半導体装置
JP2013042032A (ja) * 2011-08-18 2013-02-28 Fujitsu Ltd 化合物半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR20170101932A (ko) 2017-09-06
CN107112242B (zh) 2020-11-13
WO2016110906A1 (ja) 2016-07-14
JP6261523B2 (ja) 2018-01-17
US10115589B2 (en) 2018-10-30
JP2016127223A (ja) 2016-07-11
CN107112242A (zh) 2017-08-29
US20170352537A1 (en) 2017-12-07
TW201635394A (zh) 2016-10-01

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