CN106987824B - 原料气体供给装置和原料气体供给方法 - Google Patents
原料气体供给装置和原料气体供给方法 Download PDFInfo
- Publication number
- CN106987824B CN106987824B CN201611095814.3A CN201611095814A CN106987824B CN 106987824 B CN106987824 B CN 106987824B CN 201611095814 A CN201611095814 A CN 201611095814A CN 106987824 B CN106987824 B CN 106987824B
- Authority
- CN
- China
- Prior art keywords
- gas
- gas supply
- carrier gas
- unstrpped
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims abstract description 124
- 238000000034 method Methods 0.000 title claims abstract description 111
- 239000007789 gas Substances 0.000 claims abstract description 287
- 239000002994 raw material Substances 0.000 claims abstract description 177
- 239000012159 carrier gas Substances 0.000 claims abstract description 114
- 230000008569 process Effects 0.000 claims abstract description 88
- 239000003085 diluting agent Substances 0.000 claims abstract description 66
- 238000002309 gasification Methods 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 238000011068 loading method Methods 0.000 claims abstract description 11
- 239000007787 solid Substances 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 19
- 239000012495 reaction gas Substances 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000009825 accumulation Methods 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 101100401329 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfm3 gene Proteins 0.000 abstract description 27
- 101100023111 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfc1 gene Proteins 0.000 abstract description 24
- 238000005259 measurement Methods 0.000 description 18
- 230000004087 circulation Effects 0.000 description 14
- 238000006467 substitution reaction Methods 0.000 description 13
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 238000003860 storage Methods 0.000 description 7
- 238000011144 upstream manufacturing Methods 0.000 description 7
- 239000011343 solid material Substances 0.000 description 6
- 229910003091 WCl6 Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- -1 MFC2 Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010612 desalination reaction Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-235846 | 2015-12-02 | ||
| JP2015235846A JP6565645B2 (ja) | 2015-12-02 | 2015-12-02 | 原料ガス供給装置、原料ガス供給方法及び記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106987824A CN106987824A (zh) | 2017-07-28 |
| CN106987824B true CN106987824B (zh) | 2019-09-03 |
Family
ID=58798924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611095814.3A Active CN106987824B (zh) | 2015-12-02 | 2016-12-02 | 原料气体供给装置和原料气体供给方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10385457B2 (enExample) |
| JP (1) | JP6565645B2 (enExample) |
| KR (2) | KR101988090B1 (enExample) |
| CN (1) | CN106987824B (enExample) |
| TW (1) | TWI696723B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014115497A1 (de) * | 2014-10-24 | 2016-05-12 | Aixtron Se | Temperierte Gaszuleitung mit an mehreren Stellen eingespeisten Verdünnungsgasströmen |
| JP6959921B2 (ja) * | 2016-08-05 | 2021-11-05 | 株式会社堀場エステック | ガス制御システム及び該ガス制御システムを備えた成膜装置 |
| JP6904231B2 (ja) * | 2017-12-13 | 2021-07-14 | 東京エレクトロン株式会社 | 基板処理方法、記憶媒体及び原料ガス供給装置 |
| US11685998B2 (en) * | 2018-06-21 | 2023-06-27 | Asm Ip Holding B.V. | Substrate processing apparatus, storage medium and substrate processing method |
| JP7094172B2 (ja) | 2018-07-20 | 2022-07-01 | 東京エレクトロン株式会社 | 成膜装置、原料供給装置及び成膜方法 |
| TWI821363B (zh) * | 2018-08-31 | 2023-11-11 | 美商應用材料股份有限公司 | 前驅物遞送系統 |
| JP7281285B2 (ja) | 2019-01-28 | 2023-05-25 | 株式会社堀場エステック | 濃度制御装置、及び、ゼロ点調整方法、濃度制御装置用プログラム |
| JP7356237B2 (ja) * | 2019-03-12 | 2023-10-04 | 株式会社堀場エステック | 濃度制御装置、原料消費量推定方法、及び、濃度制御装置用プログラム |
| CN112144038B (zh) * | 2019-06-27 | 2023-06-27 | 张家港恩达通讯科技有限公司 | 一种用于MOCVD设备GaAs基外延掺杂源供给系统 |
| JP2021042445A (ja) * | 2019-09-12 | 2021-03-18 | 東京エレクトロン株式会社 | ガス供給装置、基板処理装置及びガス供給装置の制御方法 |
| TWI846960B (zh) * | 2019-10-04 | 2024-07-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 低揮發性前驅物的供應系統 |
| JP7413120B2 (ja) * | 2020-03-27 | 2024-01-15 | 東京エレクトロン株式会社 | ガス供給量算出方法、及び、半導体装置の製造方法 |
| JP7635529B2 (ja) * | 2020-09-30 | 2025-02-26 | 東京エレクトロン株式会社 | 固体原料の残存量を推定する方法、成膜を行う方法、原料ガスを供給する装置、及び成膜を行う装置 |
| US11735447B2 (en) * | 2020-10-20 | 2023-08-22 | Applied Materials, Inc. | Enhanced process and hardware architecture to detect and correct realtime product substrates |
| US12191214B2 (en) * | 2021-03-05 | 2025-01-07 | Taiwan Semiconductor Manufacturing Company Limited | System and methods for controlling an amount of primer in a primer application gas |
| KR20230017145A (ko) * | 2021-07-27 | 2023-02-03 | 에이에스엠 아이피 홀딩 비.브이. | 공정 챔버로의 전구체 전달을 모니터링하는 시스템 및 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103493181A (zh) * | 2011-04-28 | 2014-01-01 | 株式会社富士金 | 原料的汽化供给装置 |
| CN103688339A (zh) * | 2011-07-22 | 2014-03-26 | 应用材料公司 | 用于ald/cvd工艺的反应物输送系统 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10147871A (ja) * | 1996-11-15 | 1998-06-02 | Daido Steel Co Ltd | 気相成長装置の気化装置 |
| JP3973605B2 (ja) * | 2002-07-10 | 2007-09-12 | 東京エレクトロン株式会社 | 成膜装置及びこれに使用する原料供給装置、成膜方法 |
| US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
| JP2006222133A (ja) * | 2005-02-08 | 2006-08-24 | Hitachi Cable Ltd | 原料ガス供給方法及びその装置 |
| US20080141937A1 (en) * | 2006-12-19 | 2008-06-19 | Tokyo Electron Limited | Method and system for controlling a vapor delivery system |
| JP5103983B2 (ja) * | 2007-03-28 | 2012-12-19 | 東京エレクトロン株式会社 | ガス供給方法、ガス供給装置、半導体製造装置及び記憶媒体 |
| JP5895712B2 (ja) * | 2012-05-31 | 2016-03-30 | 東京エレクトロン株式会社 | 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体 |
| JP2014145115A (ja) * | 2013-01-29 | 2014-08-14 | Tokyo Electron Ltd | 原料ガス供給装置、成膜装置、流量の測定方法及び記憶媒体 |
| JP6142629B2 (ja) * | 2013-03-29 | 2017-06-07 | 東京エレクトロン株式会社 | 原料ガス供給装置、成膜装置及び原料ガス供給方法 |
| JP6135475B2 (ja) * | 2013-11-20 | 2017-05-31 | 東京エレクトロン株式会社 | ガス供給装置、成膜装置、ガス供給方法及び記憶媒体 |
-
2015
- 2015-12-02 JP JP2015235846A patent/JP6565645B2/ja active Active
-
2016
- 2016-11-22 TW TW105138271A patent/TWI696723B/zh active
- 2016-12-01 KR KR1020160162797A patent/KR101988090B1/ko active Active
- 2016-12-01 US US15/367,096 patent/US10385457B2/en active Active
- 2016-12-02 CN CN201611095814.3A patent/CN106987824B/zh active Active
-
2019
- 2019-02-22 KR KR1020190021214A patent/KR20190022596A/ko not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103493181A (zh) * | 2011-04-28 | 2014-01-01 | 株式会社富士金 | 原料的汽化供给装置 |
| CN103688339A (zh) * | 2011-07-22 | 2014-03-26 | 应用材料公司 | 用于ald/cvd工艺的反应物输送系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170159175A1 (en) | 2017-06-08 |
| KR101988090B1 (ko) | 2019-06-11 |
| KR20190022596A (ko) | 2019-03-06 |
| TW201738406A (zh) | 2017-11-01 |
| TWI696723B (zh) | 2020-06-21 |
| JP2017101295A (ja) | 2017-06-08 |
| KR20170065007A (ko) | 2017-06-12 |
| JP6565645B2 (ja) | 2019-08-28 |
| US10385457B2 (en) | 2019-08-20 |
| CN106987824A (zh) | 2017-07-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106987824B (zh) | 原料气体供给装置和原料气体供给方法 | |
| CN106191813B (zh) | 原料气体供给装置 | |
| KR101926228B1 (ko) | 원료 가스 공급 장치, 원료 가스 공급 방법 및 기억 매체 | |
| CN109913853A (zh) | 基板处理方法、存储介质以及原料气体供给装置 | |
| CN102791906B (zh) | 脉冲气体传送的控制和方法 | |
| KR101661483B1 (ko) | 셀렌화수소 혼합 가스의 공급 방법 및 공급 장치 | |
| JP2011137235A (ja) | 有機金属前駆物質を複数のエピタキシャル・リアクター部にバルク供給するための方法 | |
| CN107452651A (zh) | 用于固体和液体前体的蒸汽输送方法和装置 | |
| KR20140098684A (ko) | 원료 가스 공급 장치, 성막 장치, 원료 가스 공급 방법 및 기억 매체 | |
| JP2000513110A (ja) | 密閉容器内における非圧縮性物質の量の測定 | |
| US10256101B2 (en) | Raw material gas supply apparatus, raw material gas supply method and storage medium | |
| US8571817B2 (en) | Integrated vapor delivery systems for chemical vapor deposition precursors | |
| US7781016B2 (en) | Method for measuring precursor amounts in bubbler sources | |
| JP4515552B2 (ja) | 連続供給単一バブラーを使用するシリコンのエピタキシャル堆積のための供給システム及び方法 | |
| US20240192040A1 (en) | Semiconductor manufacturing chemical compound monitoring process | |
| US20230124304A1 (en) | Controlled delivery of low-vapor-pressure precursor into a chamber | |
| US20250389019A1 (en) | Apparatus for supplying a vaporized reactant and associated reactor systems and methods | |
| CN118788221A (zh) | 一种配液装置和半导体工艺设备 | |
| JP2000218143A (ja) | 薬液混合設備および供給量制御方法 | |
| KR20230070020A (ko) | 고체 원료의 잔존량을 추정하는 방법, 성막을 행하는 방법, 원료 가스를 공급하는 장치, 및 성막을 행하는 장치 | |
| CN121183309A (zh) | 用于供应蒸发的反应物的设备及相关的反应器系统和方法 | |
| CN117476504A (zh) | 半导体制造监测过程 | |
| JP2018195102A (ja) | オゾン用マスフローコントローラの出力検査方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |