TWI696723B - 原料氣體供給裝置、原料氣體供給方法及記憶媒體 - Google Patents
原料氣體供給裝置、原料氣體供給方法及記憶媒體 Download PDFInfo
- Publication number
- TWI696723B TWI696723B TW105138271A TW105138271A TWI696723B TW I696723 B TWI696723 B TW I696723B TW 105138271 A TW105138271 A TW 105138271A TW 105138271 A TW105138271 A TW 105138271A TW I696723 B TWI696723 B TW I696723B
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- Prior art keywords
- raw material
- gas
- gas supply
- value
- carrier gas
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- 239000002994 raw material Substances 0.000 title claims abstract description 424
- 238000000034 method Methods 0.000 title claims description 71
- 230000015654 memory Effects 0.000 title claims description 11
- 239000007789 gas Substances 0.000 claims abstract description 274
- 239000012159 carrier gas Substances 0.000 claims abstract description 110
- 238000012545 processing Methods 0.000 claims abstract description 108
- 238000010790 dilution Methods 0.000 claims abstract description 25
- 239000012895 dilution Substances 0.000 claims abstract description 25
- 239000007787 solid Substances 0.000 claims abstract description 17
- 230000001186 cumulative effect Effects 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims description 50
- 239000003085 diluting agent Substances 0.000 claims description 41
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 19
- 239000012495 reaction gas Substances 0.000 claims description 18
- 238000004364 calculation method Methods 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000004590 computer program Methods 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000000047 product Substances 0.000 claims 1
- 101100023111 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfc1 gene Proteins 0.000 abstract description 24
- 101100401329 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfm3 gene Proteins 0.000 abstract description 24
- 238000005259 measurement Methods 0.000 abstract description 20
- 230000008016 vaporization Effects 0.000 abstract description 2
- 238000009834 vaporization Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 60
- 238000000231 atomic layer deposition Methods 0.000 description 10
- -1 MFC2 Proteins 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000011144 upstream manufacturing Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000003936 working memory Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006298 dechlorination reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-235846 | 2015-12-02 | ||
| JP2015235846A JP6565645B2 (ja) | 2015-12-02 | 2015-12-02 | 原料ガス供給装置、原料ガス供給方法及び記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201738406A TW201738406A (zh) | 2017-11-01 |
| TWI696723B true TWI696723B (zh) | 2020-06-21 |
Family
ID=58798924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105138271A TWI696723B (zh) | 2015-12-02 | 2016-11-22 | 原料氣體供給裝置、原料氣體供給方法及記憶媒體 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10385457B2 (enExample) |
| JP (1) | JP6565645B2 (enExample) |
| KR (2) | KR101988090B1 (enExample) |
| CN (1) | CN106987824B (enExample) |
| TW (1) | TWI696723B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014115497A1 (de) * | 2014-10-24 | 2016-05-12 | Aixtron Se | Temperierte Gaszuleitung mit an mehreren Stellen eingespeisten Verdünnungsgasströmen |
| JP6959921B2 (ja) * | 2016-08-05 | 2021-11-05 | 株式会社堀場エステック | ガス制御システム及び該ガス制御システムを備えた成膜装置 |
| JP6904231B2 (ja) * | 2017-12-13 | 2021-07-14 | 東京エレクトロン株式会社 | 基板処理方法、記憶媒体及び原料ガス供給装置 |
| US11685998B2 (en) * | 2018-06-21 | 2023-06-27 | Asm Ip Holding B.V. | Substrate processing apparatus, storage medium and substrate processing method |
| JP7094172B2 (ja) | 2018-07-20 | 2022-07-01 | 東京エレクトロン株式会社 | 成膜装置、原料供給装置及び成膜方法 |
| TWI821363B (zh) * | 2018-08-31 | 2023-11-11 | 美商應用材料股份有限公司 | 前驅物遞送系統 |
| JP7281285B2 (ja) | 2019-01-28 | 2023-05-25 | 株式会社堀場エステック | 濃度制御装置、及び、ゼロ点調整方法、濃度制御装置用プログラム |
| JP7356237B2 (ja) * | 2019-03-12 | 2023-10-04 | 株式会社堀場エステック | 濃度制御装置、原料消費量推定方法、及び、濃度制御装置用プログラム |
| CN112144038B (zh) * | 2019-06-27 | 2023-06-27 | 张家港恩达通讯科技有限公司 | 一种用于MOCVD设备GaAs基外延掺杂源供给系统 |
| JP2021042445A (ja) * | 2019-09-12 | 2021-03-18 | 東京エレクトロン株式会社 | ガス供給装置、基板処理装置及びガス供給装置の制御方法 |
| TWI846960B (zh) * | 2019-10-04 | 2024-07-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 低揮發性前驅物的供應系統 |
| JP7413120B2 (ja) * | 2020-03-27 | 2024-01-15 | 東京エレクトロン株式会社 | ガス供給量算出方法、及び、半導体装置の製造方法 |
| JP7635529B2 (ja) * | 2020-09-30 | 2025-02-26 | 東京エレクトロン株式会社 | 固体原料の残存量を推定する方法、成膜を行う方法、原料ガスを供給する装置、及び成膜を行う装置 |
| US11735447B2 (en) * | 2020-10-20 | 2023-08-22 | Applied Materials, Inc. | Enhanced process and hardware architecture to detect and correct realtime product substrates |
| US12191214B2 (en) * | 2021-03-05 | 2025-01-07 | Taiwan Semiconductor Manufacturing Company Limited | System and methods for controlling an amount of primer in a primer application gas |
| KR20230017145A (ko) * | 2021-07-27 | 2023-02-03 | 에이에스엠 아이피 홀딩 비.브이. | 공정 챔버로의 전구체 전달을 모니터링하는 시스템 및 방법 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040007180A1 (en) * | 2002-07-10 | 2004-01-15 | Tokyo Electron Limited | Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method |
| US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
| JP2006222133A (ja) * | 2005-02-08 | 2006-08-24 | Hitachi Cable Ltd | 原料ガス供給方法及びその装置 |
| TW200846489A (en) * | 2006-12-19 | 2008-12-01 | Tokyo Electron Ltd | Method and system for controlling a vapor delivery system |
| TW201303970A (zh) * | 2011-04-28 | 2013-01-16 | Fujikin Kk | 原料的氣化供給裝置 |
| CN103688339A (zh) * | 2011-07-22 | 2014-03-26 | 应用材料公司 | 用于ald/cvd工艺的反应物输送系统 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10147871A (ja) * | 1996-11-15 | 1998-06-02 | Daido Steel Co Ltd | 気相成長装置の気化装置 |
| JP5103983B2 (ja) * | 2007-03-28 | 2012-12-19 | 東京エレクトロン株式会社 | ガス供給方法、ガス供給装置、半導体製造装置及び記憶媒体 |
| JP5895712B2 (ja) * | 2012-05-31 | 2016-03-30 | 東京エレクトロン株式会社 | 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体 |
| JP2014145115A (ja) * | 2013-01-29 | 2014-08-14 | Tokyo Electron Ltd | 原料ガス供給装置、成膜装置、流量の測定方法及び記憶媒体 |
| JP6142629B2 (ja) * | 2013-03-29 | 2017-06-07 | 東京エレクトロン株式会社 | 原料ガス供給装置、成膜装置及び原料ガス供給方法 |
| JP6135475B2 (ja) * | 2013-11-20 | 2017-05-31 | 東京エレクトロン株式会社 | ガス供給装置、成膜装置、ガス供給方法及び記憶媒体 |
-
2015
- 2015-12-02 JP JP2015235846A patent/JP6565645B2/ja active Active
-
2016
- 2016-11-22 TW TW105138271A patent/TWI696723B/zh active
- 2016-12-01 KR KR1020160162797A patent/KR101988090B1/ko active Active
- 2016-12-01 US US15/367,096 patent/US10385457B2/en active Active
- 2016-12-02 CN CN201611095814.3A patent/CN106987824B/zh active Active
-
2019
- 2019-02-22 KR KR1020190021214A patent/KR20190022596A/ko not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040007180A1 (en) * | 2002-07-10 | 2004-01-15 | Tokyo Electron Limited | Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method |
| US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
| JP2006222133A (ja) * | 2005-02-08 | 2006-08-24 | Hitachi Cable Ltd | 原料ガス供給方法及びその装置 |
| TW200846489A (en) * | 2006-12-19 | 2008-12-01 | Tokyo Electron Ltd | Method and system for controlling a vapor delivery system |
| TW201303970A (zh) * | 2011-04-28 | 2013-01-16 | Fujikin Kk | 原料的氣化供給裝置 |
| CN103688339A (zh) * | 2011-07-22 | 2014-03-26 | 应用材料公司 | 用于ald/cvd工艺的反应物输送系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170159175A1 (en) | 2017-06-08 |
| KR101988090B1 (ko) | 2019-06-11 |
| KR20190022596A (ko) | 2019-03-06 |
| TW201738406A (zh) | 2017-11-01 |
| JP2017101295A (ja) | 2017-06-08 |
| CN106987824B (zh) | 2019-09-03 |
| KR20170065007A (ko) | 2017-06-12 |
| JP6565645B2 (ja) | 2019-08-28 |
| US10385457B2 (en) | 2019-08-20 |
| CN106987824A (zh) | 2017-07-28 |
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