CN106887425A - 用于电熔丝的静电放电保护结构 - Google Patents
用于电熔丝的静电放电保护结构 Download PDFInfo
- Publication number
- CN106887425A CN106887425A CN201610076290.7A CN201610076290A CN106887425A CN 106887425 A CN106887425 A CN 106887425A CN 201610076290 A CN201610076290 A CN 201610076290A CN 106887425 A CN106887425 A CN 106887425A
- Authority
- CN
- China
- Prior art keywords
- electric fuse
- diode
- esd
- protection structure
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003068 static effect Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 9
- 244000045947 parasite Species 0.000 claims description 9
- 239000004744 fabric Substances 0.000 claims description 6
- 206010003497 Asphyxia Diseases 0.000 claims description 3
- 210000001367 artery Anatomy 0.000 claims 1
- 210000003462 vein Anatomy 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 description 7
- 238000003723 Smelting Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/971,644 US9940986B2 (en) | 2015-12-16 | 2015-12-16 | Electrostatic discharge protection structures for eFuses |
US14/971,644 | 2015-12-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106887425A true CN106887425A (zh) | 2017-06-23 |
CN106887425B CN106887425B (zh) | 2021-04-16 |
Family
ID=59064615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610076290.7A Active CN106887425B (zh) | 2015-12-16 | 2016-02-03 | 用于电熔丝的静电放电保护结构 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9940986B2 (zh) |
CN (1) | CN106887425B (zh) |
TW (1) | TWI690050B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107271888A (zh) * | 2017-07-31 | 2017-10-20 | 上海华力微电子有限公司 | 一种单个测试芯片实现多个ip芯片测试的方法 |
CN108963119A (zh) * | 2018-07-25 | 2018-12-07 | 郑州云海信息技术有限公司 | 一种电池包 |
CN109244070A (zh) * | 2018-09-25 | 2019-01-18 | 盛世瑶兰(深圳)科技有限公司 | 一种电压抑制器及其制备方法 |
CN111199966A (zh) * | 2018-11-19 | 2020-05-26 | 台湾类比科技股份有限公司 | 集成电路及其电子熔丝元件的主动式静电放电保护电路 |
CN111445943A (zh) * | 2020-04-15 | 2020-07-24 | 武汉金汤信安科技有限公司 | 一种片上一次可编程电路 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10651166B2 (en) * | 2017-05-31 | 2020-05-12 | Globalfoundries Singapore Pte. Ltd. | E-fuse cells |
US10819110B2 (en) | 2018-02-27 | 2020-10-27 | Globalfoundries Inc. | Electrostatic discharge protection device |
TWI673850B (zh) * | 2018-11-13 | 2019-10-01 | 台灣類比科技股份有限公司 | 積體電路及其電子熔絲元件的主動式靜電放電保護電路 |
US11527541B2 (en) * | 2019-12-31 | 2022-12-13 | Taiwan Semiconductoh Manufactuhing Company Limited | System and method for reducing resistance in anti-fuse cell |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW358945B (en) * | 1995-06-30 | 1999-05-21 | Samsung Electronics Co Ltd | Fuse numbering circuit for semiconductor memories |
TW200711092A (en) * | 2005-09-02 | 2007-03-16 | Novatek Microelectronics Corp | Electrostatic discharge (ESD) protection apparatus for programmable device |
CN1933156A (zh) * | 2005-09-14 | 2007-03-21 | 佳能株式会社 | 半导体器件 |
CN101061616A (zh) * | 2004-06-03 | 2007-10-24 | 阿尔特拉公司 | 静电放电保护电路 |
CN102799207A (zh) * | 2011-05-24 | 2012-11-28 | 精工电子有限公司 | 微调电路及半导体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6469884B1 (en) | 1999-12-24 | 2002-10-22 | Texas Instruments Incorporated | Internal protection circuit and method for on chip programmable poly fuses |
JP3908669B2 (ja) | 2003-01-20 | 2007-04-25 | 株式会社東芝 | 静電気放電保護回路装置 |
US6882214B2 (en) | 2003-05-16 | 2005-04-19 | O2Micro International Limited | Circuit and method for trimming locking of integrated circuits |
US7271988B2 (en) | 2004-08-04 | 2007-09-18 | Taiwan Semiconductor Manufacturing Company | Method and system to protect electrical fuses |
JP4685388B2 (ja) | 2004-09-06 | 2011-05-18 | Okiセミコンダクタ株式会社 | 半導体装置 |
US7518843B2 (en) | 2005-03-28 | 2009-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD protection circuit with low parasitic capacitance |
JP2007088192A (ja) | 2005-09-22 | 2007-04-05 | Sanyo Electric Co Ltd | 半導体装置 |
JP2009177044A (ja) | 2008-01-28 | 2009-08-06 | Panasonic Corp | 電気ヒューズ回路 |
JP5286809B2 (ja) | 2008-02-05 | 2013-09-11 | ミツミ電機株式会社 | 半導体集積回路 |
US7881028B2 (en) | 2008-03-04 | 2011-02-01 | International Business Machines Corporation | E-fuse used to disable a triggering network |
CA2722362A1 (en) | 2008-04-25 | 2009-10-29 | Access Business Group International Llc | Input protection circuit |
US8009397B2 (en) | 2008-06-13 | 2011-08-30 | Freescale Semiconductor, Inc. | Method and circuit for eFuse protection |
US8462575B2 (en) | 2010-07-14 | 2013-06-11 | Broadcom Corporation | Multi-time programmable memory |
US9425185B2 (en) * | 2014-05-29 | 2016-08-23 | Globalfoundries Inc. | Self-healing electrostatic discharge power clamp |
-
2015
- 2015-12-16 US US14/971,644 patent/US9940986B2/en active Active
-
2016
- 2016-01-11 TW TW105100696A patent/TWI690050B/zh active
- 2016-02-03 CN CN201610076290.7A patent/CN106887425B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW358945B (en) * | 1995-06-30 | 1999-05-21 | Samsung Electronics Co Ltd | Fuse numbering circuit for semiconductor memories |
CN101061616A (zh) * | 2004-06-03 | 2007-10-24 | 阿尔特拉公司 | 静电放电保护电路 |
TW200711092A (en) * | 2005-09-02 | 2007-03-16 | Novatek Microelectronics Corp | Electrostatic discharge (ESD) protection apparatus for programmable device |
CN1933156A (zh) * | 2005-09-14 | 2007-03-21 | 佳能株式会社 | 半导体器件 |
CN102799207A (zh) * | 2011-05-24 | 2012-11-28 | 精工电子有限公司 | 微调电路及半导体装置 |
Non-Patent Citations (1)
Title |
---|
刘军等: "混合信号IC的ESD保护电路设计 ", 《微电子学》 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107271888A (zh) * | 2017-07-31 | 2017-10-20 | 上海华力微电子有限公司 | 一种单个测试芯片实现多个ip芯片测试的方法 |
CN108963119A (zh) * | 2018-07-25 | 2018-12-07 | 郑州云海信息技术有限公司 | 一种电池包 |
CN108963119B (zh) * | 2018-07-25 | 2021-06-29 | 郑州云海信息技术有限公司 | 一种电池包 |
CN109244070A (zh) * | 2018-09-25 | 2019-01-18 | 盛世瑶兰(深圳)科技有限公司 | 一种电压抑制器及其制备方法 |
CN109244070B (zh) * | 2018-09-25 | 2020-12-22 | 嘉兴市晨阳箱包有限公司 | 一种电压抑制器及其制备方法 |
CN111199966A (zh) * | 2018-11-19 | 2020-05-26 | 台湾类比科技股份有限公司 | 集成电路及其电子熔丝元件的主动式静电放电保护电路 |
CN111445943A (zh) * | 2020-04-15 | 2020-07-24 | 武汉金汤信安科技有限公司 | 一种片上一次可编程电路 |
CN111445943B (zh) * | 2020-04-15 | 2022-02-11 | 武汉金汤信安科技有限公司 | 一种片上一次可编程电路 |
Also Published As
Publication number | Publication date |
---|---|
CN106887425B (zh) | 2021-04-16 |
TW201724455A (zh) | 2017-07-01 |
US9940986B2 (en) | 2018-04-10 |
TWI690050B (zh) | 2020-04-01 |
US20170178704A1 (en) | 2017-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106887425A (zh) | 用于电熔丝的静电放电保护结构 | |
CN101288215B (zh) | I/o单元esd系统 | |
US20040135229A1 (en) | Semiconductor device and method of setting input pin capacity | |
CN104134978B (zh) | 具有高的有效维持电压的静电放电(esd)钳位电路 | |
US9385527B2 (en) | Enhanced charge device model clamp | |
TW200824214A (en) | Distributed electrostatic discharge protection circuit with varying clamp size | |
JPH1079468A (ja) | 非オーミック特性物質を使用するリードフレーム及び半導体素子 | |
CN103579225B (zh) | 包括分布式二极管串的静电放电保护电路 | |
US20100219476A1 (en) | Electrostatic protection device for semiconductor circuit | |
CN110021922A (zh) | 超低电容瞬态电压抑制器 | |
US8373953B2 (en) | Distribution of electrostatic discharge (ESD) circuitry within an integrated circuit | |
US6025616A (en) | Power distribution system for semiconductor die | |
CN107731742A (zh) | 芯片静电放电总线布线方法及根据该方法得到的芯片 | |
CN107293538B (zh) | 暂态电压抑制集成电路 | |
JP4652703B2 (ja) | 半導体回路装置及びマルチ・チップ・パッケージ | |
US20100001394A1 (en) | Chip package with esd protection structure | |
JP2008147376A (ja) | 半導体装置 | |
KR20170132371A (ko) | 정전기 방전 보호 회로를 구비한 반도체 집적 회로 장치 | |
US20170077060A1 (en) | Semiconductor device, semiconductor chip, and method of manufacturing semiconductor device | |
CN102053216B (zh) | 静电放电测试方法 | |
CN217544618U (zh) | 一种提高芯片esd性能的封装结构 | |
CN102543995A (zh) | 负电源集成电路的静电放电保护电路 | |
JPH01307243A (ja) | 半導体集積回路装置 | |
TWM641684U (zh) | 控制晶片以及開關電源 | |
KR101147293B1 (ko) | 메모리 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20201117 Address after: Singapore City Applicant after: Marvell Asia Pte. Ltd. Address before: Greater Cayman Islands, British Cayman Islands Applicant before: Kawam International Inc. Effective date of registration: 20201117 Address after: Greater Cayman Islands, British Cayman Islands Applicant after: Kawam International Inc. Address before: Hamilton, Bermuda Applicant before: Marvell International Ltd. Effective date of registration: 20201117 Address after: Hamilton, Bermuda Applicant after: Marvell International Ltd. Address before: Greater Cayman Islands, British Cayman Islands Applicant before: GLOBALFOUNDRIES Inc. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |