CN106876405A - 液晶显示器及其制造方法 - Google Patents

液晶显示器及其制造方法 Download PDF

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Publication number
CN106876405A
CN106876405A CN201611138698.9A CN201611138698A CN106876405A CN 106876405 A CN106876405 A CN 106876405A CN 201611138698 A CN201611138698 A CN 201611138698A CN 106876405 A CN106876405 A CN 106876405A
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electrode
semiconductor layer
liquid crystal
crystal display
layer
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CN106876405B (zh
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金德星
林制钟
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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Abstract

本发明公开一种液晶显示器及其制造方法。该液晶显示器包括：被设置在基板上的半导体层；被设置在半导体层上的透明电极，透明电极与半导体层重叠并包括源电极、面对源电极的漏电极以及从漏电极延伸的第一电极；以及被设置在透明电极上的绝缘层。半导体层接触源电极、漏电极和第一电极的整个表面。

Description

液晶显示器及其制造方法
相关申请的交叉引用
此申请要求2015年12月11日提交到韩国知识产权局的韩国专利申请第10-2015-0177426号的优先权和权益，其出于所有目的通过引用被合并于此，如同在本文中完全阐述一样。
技术领域
示例性实施例涉及液晶显示器及其制造方法。
背景技术
液晶显示器是广泛使用的一种平板显示器，并且包括像素。每个像素可以包括像素电极以及被设置在像素电极与公共电极之间的液晶层。液晶显示器通过控制像素电极和公共电极的电压以向液晶层的液晶分子提供电场来显示图像。液晶显示器的液晶分子可以根据电场重新排列，由此控制透射光的量。
像素电极连接至诸如薄膜晶体管的开关元件，以接收数据电压。薄膜晶体管包括源电极、漏电极以及用作薄膜晶体管的沟道的半导体层。源电极和漏电极中的一个可以连接至像素电极，并且薄膜晶体管可以通过它们将数据电压传输到像素电极。
在形成薄膜晶体管的半导体层之后，可在半导体层上形成金属成分。金属成分可流入半导体层中，并且可能污染用作沟道的半导体层。在这种情况下，薄膜晶体管的性能可能劣化。
在此背景技术部分中公开的上述信息仅用于增强对发明构思的背景的理解，因此其可能包含不形成在该国本领域普通技术人员已经知晓的现有技术的信息。
发明内容
示例性实施例提供一种具有提高的可靠性的液晶显示器。
示例性实施例提供一种制造具有提高的可靠性的液晶显示器的方法。
另外方面将在随后的详细描述中阐述，并且部分根据公开是显而易见的，或者可以通过对本发明构思的实践来获知。
示例性实施例公开了一种液晶显示器，包括：被设置在基板上的半导体层；被设置在半导体层上的透明电极，透明电极与半导体层重叠并包括源电极、面对源电极的漏电极以及从漏电极延伸的第一电极；以及被设置在透明电极上的绝缘层。半导体层接触源电极、漏电极和第一电极的整个表面。
示例性实施例还公开了一种制造液晶显示器的方法，包括：在基板上形成半导体层和透明电极，透明电极被设置在半导体层上并包括源电极、面对源电极的漏电极以及从漏电极延伸的第一电极；在半导体层、源电极、漏电极和第一电极上形成绝缘层；以及在绝缘层上形成信号线。半导体层和透明电极基于相同的曝光掩模形成。
示例性实施例还公开了一种液晶显示器，包括：被设置在基板上的半导体层；源电极、面对源电极的漏电极以及从漏电极延伸的像素电极，源电极、漏电极和像素电极中的每一个被设置在半导体层上；被设置在半导体层、源电极、漏电极和像素电极上的绝缘层；以及被设置在绝缘层上的信号线，信号线通过绝缘层的接触孔连接至源电极。绝缘层覆盖源电极与漏电极之间的半导体层，使其与信号线隔开。
前述一般性描述和下面的详细描述都是示例性和解释性的，并且旨在提供对要求保护的主题的进一步解释。
附图说明
被包括进来以提供对本发明构思的进一步理解并且被并入此说明书中并构成说明书一部分的附图示出了本发明构思的示例性实施例，并与描述一起用于解释本发明构思的原理。
图1是根据一个示例性实施例的液晶显示器的剖视图。
图2是根据一个示例性实施例的液晶显示器的一个像素的布局图。
图3是图2的液晶显示器的沿线III-III'截取的剖视图。
图4是图2的液晶显示器的沿线IV-IV'截取的剖视图。
图5是图2的液晶显示器的沿线V-V'截取的剖视图。
图6是图2的液晶显示器的沿线VI-VI'截取的剖视图。
图7是根据一个示例性实施例的液晶显示器的信号线的布局图。
图8是图7的液晶显示器的沿线VIII-VIII'截取的剖视图。
图9至图48是顺序地示出了根据一个示例性实施例的制造液晶显示器的方法的工艺的剖视图。
具体实施方式
在下面的描述中，出于解释的目的，为了提供对各种示例性实施例的彻底理解，阐述了许多具体的细节。然而，很明显，各种示例性实施例可以在没有这些具体细节或具有一个或多个等同布置的情况下实施。在其他情况下，为了避免不必要地使各种示例性实施例隐晦费解，公知的结构和设备以框图形式示出。
在附图中，为了清楚和说明的目的，层、膜、面板、区域等的尺寸和相对尺寸可能被夸大了。另外，相同的附图标记指代相同的元件。
当元件或层被称为在另一元件或层“上”、“连接至”或“联接至”另一元件或层时，它可以直接在另一元件或层上，直接连接至或联接至另一元件或层，或者可以存在中间元件或中间层。然而，当元件或层被称为“直接在”另一元件或层“上”、“直接连接至”或“直接联接至”另一元件或层时，不存在中间元件或中间层。出于公开的目的，“X、Y和Z中的至少一个”和“选自由X、Y和Z组成的组中的至少一个”可以被解释为只有X、只有Y、只有Z、或X、Y和Z中的两个或更多个的任意组合，诸如，例如，XYZ、XYY、YZ和ZZ。相同的附图标记指代相同的元件。如本文所用，术语“和/或”包括相关联的所列项目中的一个或多个的任意和所有组合。
虽然术语第一、第二等可在本文中用来描述各种元件、组件、区域、层和/或部分，但是这些元件、组件、区域、层和/或部分不应该受这些术语的限制。这些术语仅用来区分一个元件、组件、区域、层和/或部分与另一个元件、组件、区域、层和/或部分。因此，下面讨论的第一元件、组件、区域、层和/或部分可以被称为第二元件、组件、区域、层和/或部分，而不脱离本公开的教导。
出于描述的目的，在本文中使用了诸如“之下”、“下方”、“下”、“上方”、“上”等的空间相对术语来描述如图中所示的一个元件或特征相对于另一个(些)元件或特征的关系。除了图中描述的方位之外，空间相对术语意在还包含装置在使用、操作和/或制造中的不同方位。例如，如果图中装置被翻转，则被描述为在其它元件或特征“下方”或“之下”的元件将被定向为在其它元件或特征的“上方”。因此，示例性术语“下方”可以包括上方和下方两种方位。此外，装置可被另外定向(例如旋转90度或者在其它方向)，并且照此，本文使用的空间相对描述符可以进行相应的解释。
本文使用的术语用于描述特定的实施例，并不旨在进行限制。如本文所用，单数形式的“一”和“该(所述)”旨在也包括复数形式，除非上下文另有明确说明。此外，当在说明书中使用时，术语“包括”和/或“包含”表明存在所陈述的特征、整数、步骤、操作、元件、组件和/或它们的组，但不排除存在或添加一个或多个其它特征、整数、步骤、操作、元件、组件和/或它们的组。
在本文中参考作为理想化示例性实施例和/或中间结构的示意性图示的剖视图示来描述各个示例性实施例。这样，作为例如制造技术和/或公差的结果，可以预期图示形状的变化。因此，在本文中公开的示例性实施例不应该被解释为限于区域的特定例示形状，而是包括例如由于制造产生的形状偏差。图中所示的区域在本质上是示意性的，它们的形状并不旨在示出设备的区域的实际形状，并且不旨在进行限制。
除非另有定义，本文使用的所有术语(包括技术和科学术语)具有本公开所属的技术领域的普通技术人员所通常理解的相同含义。例如那些在常用字典中定义的术语应该被解释为具有与它们在相关领域的上下文的含义一致的含义，并且将不以理想化或过于正式的意义来解释，除非在本文中明确地如此定义。
图1是根据一个示例性实施例的液晶显示器的剖视图。
参考图1，液晶显示器包括第一显示面板100、第二显示面板200以及被插入在第一显示面板100与第二显示面板200之间的液晶层3。
第一显示面板100包括第一基板110、栅电极124、栅极绝缘层140、半导体层154以及透明电极191、192和193。
第一基板110可以在平面方向上延伸。栅电极124被设置在第一基板110上。栅极绝缘层140被设置在栅电极124和第一基板110上。半导体层154被设置在栅极绝缘层140上。作为透明电极的源电极191、漏电极192和像素电极193被设置在半导体层154上。源电极191可以具有从源电极191延伸的第一延伸部191a。漏电极192可以面对源电极191，并且像素电极193可以从漏电极192延伸到用户可见的像素区域。
源电极191、漏电极192和像素电极193被置于同一层，并且由相同的材料形成。源电极191、漏电极192和像素电极193可以由透明导电材料形成。
根据一个示例性实施例，透明电极191、192和193的整个表面可以接触半导体层154。半导体层154的第一边缘54a在平面方向上比透明电极191、192和193的第二边缘93a更突出。这将参考图2和图3更详细地描述。
第一显示面板100可以进一步包括钝化层180、信号线和公共电极270。
钝化层180被设置在源电极191、漏电极192和像素电极193上。钝化层180被提供有用于部分地暴露源电极191的第一延伸部191a的第一接触孔181。
数据线的第二延伸部172被设置在由第一接触孔181暴露的源电极191上。源电极191通过第一延伸部191a和第二延伸部172连接至数据线，数据线被设置在钝化层180上。
形成公共电极的分支电极271被设置在钝化层180上。分支电极271与像素电极193重叠并且由多个切口72限定。第一钝化构件272被设置在数据线171上。
第一钝化构件272和分支电极271可以形成在同一层上。第一钝化构件272和公共电极270可以包括相同的材料。
第二显示面板200包括第二基板210。
液晶层3包括液晶分子，并且每个液晶分子的长轴可以与第一基板110和第二基板210的表面平行。
图2是根据一个或多个示例性实施例的液晶显示器的一个像素的布局图，图3是图2的液晶显示器的沿线III-III'截取的剖视图，图4是图2的液晶显示器的沿线IV-IV'截取的剖视图，图5是图2的液晶显示器的沿线V-V'截取的剖视图，并且图6是图2的液晶显示器的沿线VI-VI'截取的剖视图。
将参考图2至图6描述根据一个示例性实施例的液晶显示器的第一显示面板100。
栅极线121被设置在第一基板110上，并且在第一方向上延伸。栅极线121包括栅电极124和栅极焊盘129。数据线171在与第一方向相交的第二方向上延伸。数据线171包括第二延伸部172和数据焊盘179。相邻的栅极线和相邻的数据线可以限定包括用户可见的像素区域的像素。
栅极线121可以由诸如铝(Al)或铝合金的铝基金属、诸如银(Ag)或银合金的银基金属、诸如铜(Cu)或铜合金的铜基金属、诸如钼(Mo)或钼合金的钼基金属、铬(Cr)、钽(Ta)或钛(Ti)制成。栅极线121可以具有包括具有不同物理性质的至少两个导电层的多层结构。
由氮化硅(SiNx)、氧化硅(SiOx)等制成的栅极绝缘层140形成在栅极线121上。栅极绝缘层140可以具有包括具有不同物理性质的至少两个绝缘层的多层结构。
半导体层154被设置在栅极绝缘层140上。
半导体层154包括氧化物半导体。氧化物半导体可以包括基于钛(Ti)、铪(Hf)、锆(Zr)、铝(Al)、钽(Ta)、锗(Ge)、锌(Zn)、镓(Ga)、锡(Sn)或铟(In)的氧化物及其复合氧化物中的一种。例如，氧化物半导体可以包括氧化锌(ZnO)、氧化铟镓锌(InGaZnO4)、氧化铟锌(Zn-In-O)、氧化锌锡(Zn-Sn-O)、氧化铟镓(In-Ga-O)、氧化铟锡(In-Sn-O)、氧化铟锆(In-Zr-O)、氧化铟锆锌(In-Zr-Zn-O)、氧化铟锆锡(In-Zr-Sn-O)、氧化铟锆镓(In-Zr-Ga-O)、氧化铟铝(In-Al-O)、氧化铟锌铝(In-Zn-Al-O)、氧化铟锡铝(In-Sn-Al-O)、氧化铟铝镓(In-Al-Ga-O)、氧化铟钽(In-Ta-O)、氧化铟钽锌(In-Ta-Zn-O)、氧化铟钽锡(In-Ta-Sn-O)、氧化铟钽镓(In-Ta-Ga-O)、氧化铟锗(In-Ge-O)、氧化铟锗锌(In-Ge-Zn-O)、氧化铟锗锡(In-Ge-Sn-O)、氧化铟锗镓(In-Ge-Ga-O)、氧化钛铟锌(Ti-In-Zn-O)和氧化铪铟锌(Hf-In-Zn-O)中的至少一种。
包括源电极191、漏电极192和像素电极193的透明电极191、192和193被直接设置在半导体层154上。栅电极124、源电极191、漏电极192以及半导体层154的位于源电极191与漏电极192之间的一部分可以构成位于像素区域外部的薄膜晶体管。半导体层154的位于源电极191与漏电极192之间的该部分可以用作薄膜晶体管的沟道。
源电极191、漏电极192和像素电极193被置于同一层，并且由透明导电材料制成。
源电极191面对漏电极192，并且包括第一延伸部191a。源电极191的第一延伸部191a朝向数据线171的第二延伸部172突出，并且将源电极191连接至第二延伸部172。源电极191通过第一延伸部191a和第二延伸部172连接至数据线171。
漏电极192延伸以形成像素电极193。作为漏电极192的延伸部分的像素电极193可以延伸到像素的像素区域。
源电极191、漏电极192和像素电极193可以包括包含铟、锌和/或锡的透明金属氧化物层。
根据一个示例性实施例，除了薄膜晶体管的沟道之外，半导体层154的平面形状在俯视图中基本上类似于透明电极191、192和193的平面形状。当制造液晶显示器时，可以使用相同的曝光掩模来形成半导体层154和透明电极191、192和193。因此，可以降低液晶显示器的制造成本。
在一个或多个示例性实施例中，半导体层154的第一边缘54a在第一方向和第二方向上比透明电极191、192和193的第二边缘93a更突出，如图3所示。如图2所示，半导体层154的边缘可以围绕透明电极191、192和193。半导体层154和像素电极193可以具有围绕像素区域的台阶形状。
钝化层180被设置在源电极191、漏电极192和像素电极193上。钝化层180可以由无机绝缘材料等制成。薄膜晶体管的被设置在源电极191与漏电极192之间的沟道被钝化层180覆盖，而与数据线171隔开，从而防止形成数据线171的金属层的成分扩散到沟道中。
钝化层180被提供有暴露源电极191的第一延伸部191a的第一接触孔181和暴露栅极焊盘129的第二接触孔182。
数据线171和公共电压线131被设置在钝化层180上。数据线171包括朝向源电极191突出的第二延伸部172以及数据焊盘179。
公共电压线131包括公共焊盘139。
数据线171的第二延伸部172通过第一接触孔181连接至源电极191的第一延伸部191a。数据线171的第二延伸部172通过第一接触孔181接触源电极191的第一延伸部191a。这样，源电极191和数据线171通过第一接触孔181彼此直接连接。因此，即使源电极191和漏电极192由透明金属氧化物形成，通过数据线171传输的信号也被有效地传输到源电极191而没有延迟，并且数据线171的信号可以通过源电极191和漏电极192被有效地传输到像素电极193。
数据线171和公共电压线131可以被置于同一层。数据线171和公共电压线131可以由诸如钼、铬、钽和钛的难熔金属或者其合金制成。数据线171和公共电压线131可以具有包括难熔金属层和低电阻导电层的多层结构。例如，多层结构可以包括包含铬或钼(合金)下层和铝(合金)上层的双层，以及包含钼(合金)下层、铝(合金)中间层和钼(合金)上层的三层。然而，数据线171和公共电压线131的各方面不限于此。数据线171可以由各种其它金属和导体制成。
公共电极270被设置在钝化层180上。公共电极270与像素电极193重叠，并且包括由多个切口72限定的多个分支电极271。
第一钝化构件272被设置在数据线171的直接连接至源电极191的第二延伸部172上，并且第二钝化构件273被设置在数据线171和数据焊盘179上。第一钝化构件272和第二钝化构件273可以覆盖第二延伸部172、数据线171和数据焊盘179的上表面和侧表面。
分支电极271连接至用于覆盖公共电压线131和公共焊盘139的上表面和侧表面的第三钝化构件274。第三钝化构件274可以从分支电极271延伸以覆盖公共电压线131。也就是说，公共电极270可以包括分支电极271和第三钝化构件274，并且可以与公共电压线131直接接触。
第一钝化构件272、第二钝化构件273和第三钝化构件274与分支电极271被置于同一层，并且覆盖被形成为金属层的数据线171和公共电压线131。因此，可以防止金属层的成分扩散到液晶层中。
分支电极271可以通过用于覆盖公共电压线131的第三钝化构件274接收公共电压。因此，公共电压线131的信号可以被有效地传输到分支电极271。
第二钝化构件273和第三钝化构件274便于数据焊盘179和公共焊盘139与外部驱动器之间的连接。
第四钝化构件275被设置在由钝化层180的第二接触孔182暴露的栅极焊盘129上。第四钝化构件275与公共电极270被置于同一层，并且便于栅极焊盘129与外部栅极信号传输驱动器之间的连接。
将参考图7和图8描述根据一个示例性实施例的液晶显示器的一部分。
图7是根据一个示例性实施例的液晶显示器的信号线的布局图，图8是图7的液晶显示器的沿线VIII-VIII'截取的剖视图。
参考图7和图8，液晶显示器包括在第一方向上延伸的第一层127以及在与第一方向相交的第二方向上延伸的第二层177。第一层127包括在第二方向上突出的第三延伸部128，并且第二层177包括在第一方向上突出的第四延伸部178。
第一层127与第三延伸部128一起可以被设置在第一基板110上，并且栅极绝缘层140可以覆盖第一层127。第二层177被设置在位于栅极绝缘层140上的钝化层180上。在一个或多个示例性实施例中，第一层127可以与栅极线121被置于同一层，并且第二层177可以与数据线171被置于同一层。
第一层127的第三延伸部128和第二层177的第四延伸部178通过形成在栅极绝缘层140和钝化层180中的第三接触孔183彼此直接连接。
与公共电极270形成在同一层上的第五钝化构件276被设置在第二层177上。第五钝化构件276可以覆盖第二层177的上表面和侧表面。
由于与栅极线121被置于同一层的第一层127以及与数据线171被置于同一层的第二层177通过第三接触孔183彼此直接连接，因此第一层127的信号可以被有效地传输到第二层177，或者第二层177的信号可以被有效地传输到第一层127。另外，由于第五钝化构件276覆盖第二层177的上表面和侧表面，因此可以防止金属层的成分扩散到液晶层中。
图7和图8示出的一部分可以是被设置在液晶显示器的显示区域的周边的周边区域的一部分。
根据一个或多个示例性实施例，作为透明金属层的源电极、漏电极和像素电极被直接设置在半导体层上，钝化层被设置在源电极与漏电极之间的半导体层上，并且数据线形成在钝化层上。因此，可以防止在形成数据线的工艺中产生的金属材料流入且扩散到半导体层中。因此，包括半导体层的薄膜晶体管可以具有提高的可靠性。
根据一个示例性实施例，因为被设置在钝化层上的数据线和公共电压线被与公共电极形成在同一层上的钝化构件覆盖，因此可以防止信号线的金属成分流入且扩散到液晶层中。
此外，根据一个示例性实施例，覆盖公共电压线的钝化构件可以将公共电压线的信号传输到公共电极。因此，公共电压线的信号可以被有效地传输到公共电极。
现在将参考图9至图48连同图1至图8描述根据一个或多个示例性实施例的制造液晶显示器的方法。
图9至图48是顺序地示出了根据一个或多个示例性实施例的制造液晶显示器的方法的工艺的剖视图。
图9、图14、图19、图24、图29、图34、图39和图44示出了图2的沿线III-III'截取的剖视图。图10、图15、图20、图25、图30、图35、图40和图45示出了图2的沿线IV-IV'截取的剖视图。图11、图16、图21、图26、图31、图36、图41和图46示出了图2的沿线V-V'截取的剖视图。图12、图17、图22、图27、图32、图37、图42和图47示出了图2的沿线VI-VI'截取的剖视图。图13、图18、图23、图28、图33、图38、图43和图48示出了图7的沿线VIII-VIII'截取的剖视图。
参考图9至图13，在第一基板110上形成包括栅电极124和栅极焊盘129的栅极线121以及与栅极线121形成在同一层上并且包括第三延伸部128的第一层127，并且在栅极线121和第一层127上形成栅极绝缘层140。
参考图14至图18，在栅极绝缘层140上顺序地堆叠第一氧化物半导体层150和第一透明金属层190。在一个或多个示例性实施例中，第一透明金属层190可以是透明氧化物导电层。
使用曝光标记在第一透明金属层190上形成第一感光膜图案400。如图19至图23所示，感光膜形成在第一透明金属层190上，然后被曝光和显影，使得形成第一感光膜图案400，第一感光膜图案400根据其位置具有彼此不同的第一厚度400a和第二厚度400b。
存在若干种根据感光膜的位置而不同地形成感光膜的厚度的方法。例如，半透明区域以及透明区域和遮光区域可以被设置在曝光掩模中。半透明区域被提供有狭缝图案、格子图案或具有中间透射率或中间厚度的薄膜。当使用狭缝图案时，狭缝的宽度或狭缝之间的间隙可以小于在光刻工艺中使用的曝光的分辨率。在另一个示例中，可以使用能够回流的感光膜。也就是说，在用具有透明区域和遮光区域的典型掩模形成其中可以回流的感光膜图案之后，感光膜回流到其中不残留感光膜的区域，从而形成薄部分。
参考图24至图28，通过使用第一感光膜图案400作为蚀刻掩模蚀刻第一氧化物半导体层150和第一透明金属层190，来形成第二氧化物半导体层51和第二透明金属层91。此外，保留第一感光膜图案400的具有第一厚度400a的部分，并且通过减小第一感光膜图案400的高度来去除第一感光膜图案400的具有第二厚度400b的部分。参考图29至图33，形成具有与第一感光膜图案400的第一厚度400a相对应的剩余部分的第二感光膜图案500。
通过使用第二感光膜图案500作为蚀刻掩模来蚀刻第二透明金属层91，并且去除第二感光膜图案500。参考图34至图38，从第二透明金属层91形成源电极191、漏电极192和像素电极193，并且从第二氧化物半导体层51形成半导体层154。与沟道相对应的半导体层154可以被暴露。与源电极191、漏电极192和像素电极193相对应的透明金属层可以被蚀刻两次，并且半导体层154被蚀刻一次。在一个示例性实施例中，透明金属层的边缘被蚀刻的程度比半导体层154的边缘更大。半导体层154的第一边缘54a比源电极191、漏电极192和像素电极193的第二边缘93a更突出。在一个示例性实施例中，像素电极193的边缘和半导体层154的边缘可以具有围绕每个像素的像素区域的台阶形状。
如图39至图43所示，在通过执行一次光刻工艺形成半导体层154、源电极191、漏电极192和像素电极193之后，形成被提供有第一接触孔181、第二接触孔182和第三接触孔183的钝化层180。
如图44至图48所示，形成包括数据焊盘179以及通过第一接触孔181直接连接至源电极191的第一延伸部191a的第二延伸部172的数据线171，形成包括公共焊盘139的公共电压线131，并且形成与数据线171形成在同一层上并且包括第四延伸部178的第二层177。数据线171、公共电压线131和第二层177同时形成在同一层上。
如图1至图8所示，形成与像素电极193重叠并包括分支电极271的公共电极270、位于数据线171的直接连接至源电极191的第二延伸部172上的第一钝化构件272、位于数据线171和数据焊盘179上的第二钝化构件273、位于公共电压线131和公共焊盘139上的第三钝化构件274、位于栅极焊盘129上的由第二接触孔182暴露的第四钝化构件275以及位于包括第四延伸部178的第二层177上的第五钝化构件276。
在将第二基板210设置为面对第一基板110之后，通过在第一基板110与第二基板210之间注入液晶层3来形成液晶显示器。
根据示例性实施例，由于半导体层和透明金属层通过一个光刻工艺形成，因此可以降低制造成本。
根据示例性实施例，由于源电极与漏电极之间的半导体层被钝化层覆盖，因此可以防止在后续工艺中可能出现的金属材料流入且扩散到半导体层中。因此，液晶显示器可以具有提高的可靠性。
尽管在本文中已经描述了某些示例性实施例和实施方式，但其它实施例和修改从此描述中将是显而易见的。因此，本发明构思不限于这样的实施例，而是所呈现的权利要求和各种明显修改及等同布置的更宽范围。

Claims (15)

1.一种液晶显示器，包括：
被设置在基板上的半导体层；
被设置在所述半导体层上的透明电极，所述透明电极与所述半导体层重叠并包括源电极、面对所述源电极的漏电极以及从所述漏电极延伸的第一电极；以及
位于所述透明电极上的绝缘层，
其中所述半导体层接触所述源电极、所述漏电极和所述第一电极的整个表面。
2.根据权利要求1所述的液晶显示器，其中所述半导体层包括氧化物半导体。
3.根据权利要求1所述的液晶显示器，其中所述基板在平面方向上延伸，并且所述半导体层的边缘在所述平面方向上比所述透明电极的边缘更突出。
4.根据权利要求1所述的液晶显示器，其中所述半导体层的边缘围绕所述透明电极。
5.根据权利要求1所述的液晶显示器，进一步包括：
被设置在所述绝缘层上的数据线，
其中所述数据线通过提供在所述绝缘层中的接触孔直接连接至所述源电极。
6.根据权利要求5所述的液晶显示器，进一步包括：
覆盖所述数据线的钝化构件；以及
被设置在所述绝缘层上的第二电极，所述第二电极与所述第一电极重叠。
7.根据权利要求6所述的液晶显示器，其中所述钝化构件和所述第二电极包括相同的材料。
8.根据权利要求6所述的液晶显示器，进一步包括被设置在所述绝缘层上的电压线，所述电压线被配置为将电压传输到所述第二电极，
其中所述电压线和所述第二电极彼此直接接触。
9.根据权利要求8所述的液晶显示器，其中：
所述数据线和所述电压线包括相同的材料；并且
所述钝化构件和所述第二电极包括相同的材料。
10.一种用于制造液晶显示器的方法，包括：
在基板上形成半导体层和透明电极，所述透明电极被设置在所述半导体层上并包括源电极、面对所述源电极的漏电极以及从所述漏电极延伸的第一电极；
在所述半导体层、所述源电极、所述漏电极和所述第一电极上形成绝缘层；以及
在所述绝缘层上形成信号线，
其中所述半导体层和所述透明电极基于相同的曝光掩模形成。
11.根据权利要求10所述的方法，其中形成所述半导体层和所述透明电极包括：
在所述基板上堆叠氧化物半导体层；
在所述氧化物半导体层上堆叠透明氧化物导电层；
使用所述曝光掩模在所述透明氧化物导电层上形成感光膜；
使用所述感光膜作为掩模对所述透明氧化物导电层和所述氧化物半导体层进行首次蚀刻；以及
使用所述感光膜作为掩模对所述透明氧化物导电层进行第二蚀刻，
其中所述半导体层和所述透明电极分别由所述氧化物半导体层和所述透明氧化物导电层形成。
12.根据权利要求10所述的方法，其中所述透明电极的整个表面与所述半导体层接触。
13.根据权利要求10所述的方法，其中：
形成所述绝缘层包括形成暴露所述源电极的接触孔；并且
所述信号线通过所述接触孔直接连接至所述源电极。
14.根据权利要求11所述的方法，进一步包括：
在所述信号线上形成钝化构件；以及
在所述绝缘层上形成第二电极，所述第二电极与所述第一电极重叠，
其中形成所述钝化构件和形成所述第二电极同时进行。
15.根据权利要求14所述的方法，进一步包括在所述绝缘层上形成电压线，所述电压线将电压传输到所述第二电极，
其中所述电压线和所述第二电极彼此直接接触。
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