CN106783747A - 一种阵列基板的制作方法、阵列基板及显示装置 - Google Patents

一种阵列基板的制作方法、阵列基板及显示装置 Download PDF

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CN106783747A
CN106783747A CN201710002000.9A CN201710002000A CN106783747A CN 106783747 A CN106783747 A CN 106783747A CN 201710002000 A CN201710002000 A CN 201710002000A CN 106783747 A CN106783747 A CN 106783747A
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transparent electrode
preparation
electrode
region
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卢彦春
周纪登
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to CN201710002000.9A priority Critical patent/CN106783747A/zh
Publication of CN106783747A publication Critical patent/CN106783747A/zh
Priority to US15/764,028 priority patent/US10429698B2/en
Priority to PCT/CN2017/096837 priority patent/WO2018126688A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G02F1/133723—Polyimide, polyamide-imide
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Abstract

本发明公开了一种阵列基本的制作方法，其中，所述制作方法包括：提供衬底，所述衬底包括透明基板、形成在所述透明基板上的数据电极图形层以及覆盖所述数据电极图形层的绝缘层，所述数据电极图形层包括多个数据电极；形成贯穿所述绝缘层的过孔，以暴露出部分所述数据电极；形成透明电极材料层；形成透明电极层，所述透明电极层包括透明电极和与所述透明电极相连的连接部，所述连接部位于所述过孔中，以将所述透明电极与相应的所述数据电极电连接，所述连接部上方设置有填充物。本发明还公开了一种阵列基板及显示装置。本发明公开的阵列基板的制作方法减轻了与过孔对应的连接部位置对取向膜的吸附作用。

Description

一种阵列基板的制作方法、阵列基板及显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板的制作方法、阵列基板及显示装置。
背景技术
随着薄膜晶体管液晶显示面板的技术发展，对画面品质的要求越来越高。聚酰亚胺树脂(Polyimide，简称PI)膜增厚对提高摩擦锚定能力有显著的改善作用，且摩擦能力增强对大尺寸产品的漏光残像都有显著的改善作用。但是PI膜增厚也会带来面板污渍等问题，主要是由于过孔段差较大，PI扩散很容易受到影响而被吸附进过孔，从而导致明显的色云纹(mura)出现，严重影响画面的品质。
发明内容
本发明旨在解决现有技术中存在的技术问题之一，提供一种阵列基板的制作方法、阵列基板及显示装置。
作为本发明的第一个方面，提供一种阵列基本的制作方法，其中，所述制作方法包括：
提供衬底，所述衬底包括透明基板、形成在所述透明基板上的数据电极图形层以及覆盖所述数据电极图形层的绝缘层，所述数据电极图形层包括多个数据电极；
形成贯穿所述绝缘层的过孔，以暴露出部分所述数据电极；
形成透明电极材料层；
形成透明电极层，所述透明电极层包括透明电极和与所述透明电极相连的连接部，所述连接部位于所述过孔中，以将所述透明电极与相应的所述数据电极电连接，所述连接部上方设置有填充物。
优选地，形成透明电极层的步骤包括：
在形成有所述过孔的所述绝缘层的基底上沉积所述透明电极材料层；
在所述透明电极材料层上涂覆光刻胶层。
优选地，当所述光刻胶层由正性光刻胶材料形成时，所述形成透明电极层的步骤还包括：
利用半色调掩膜板对所述光刻胶层进行曝光，其中，所述半色调掩膜板包括透光区、半透光区和遮光区，所述遮光区对应所述透明电极材料层上用于形成所述连接部的区域，所述半透光区对应所述透明电极材料层上用于形成所述透明电极的区域，所述透光区对应所述透明电极材料层上除上述区域之外的区域；
对曝光后的所述光刻胶层进行显影，以获得保护图形；
对设置有所述保护图形的所述透明电极材料层进行刻蚀；
对所述保护图形进行灰化，以去除所述保护图形上除用于形成所述连接部的区域之外的材料。
优选地，当所述光刻胶层由负性光刻胶材料形成时，所述形成透明电极层的步骤还包括：
利用半色调掩膜板对所述光刻胶层进行曝光，其中，所述半色调掩膜板包括透光区、半透光区和遮光区，所述透光区对应所述透明电极材料层上用于形成所述连接部的区域，所述半透光区对应所述透明电极材料层上用于形成所述透明电极的区域，所述遮光区对应所述透明电极材料层上除上述区域之外的区域；
对曝光后的所述光刻胶层进行显影，以获得保护图形；
对设置有所述保护图形的所述透明电极材料层进行刻蚀；
对所述保护图形进行灰化，以去除所述保护图形上除用于形成所述连接部的区域之外的材料。
优选地，所述形成透明电极层的步骤还包括在对所述保护图形进行灰化的步骤之后进行的：
对图形化的所述透明电极材料层进行退火，以获得所述透明电极层。
优选地，所述数据电极包括源极和漏极，在形成贯穿所述绝缘层的过孔的步骤中，以暴露出部分所述漏极。
优选地，所述制作方法还包括在形成透明电极层的步骤之后进行的：
在所述透明电极层上形成取向膜。
优选地，所述取向膜的材料包括聚酰亚胺树脂。
优选地，所述透明电极材料层的材料包括氧化铟锡。
优选地，所述提供衬底的步骤包括：
在所述透明基板上形成栅极图形层，所述栅极图形层包括栅极；
形成栅极绝缘层，以覆盖所述栅极图形层；
形成有源层图形层，以覆盖所述栅极图形层，所述有源层图形层包括与所述栅极对应的有源层，且所述有源层与所述数据电极电连接。
优选地，所述有源层图形层的材料包括非晶硅。
作为本发明的第二个方面，提供一种阵列基板，其中，所述阵列基板由前文所述的制作方法制作得到。
作为本发明的第三个方面，提供一种显示装置，其中，所述显示装置包括前文所述的阵列基板。
本发明提供的阵列基板的制作方法，通过在连接部的上方设置填充物，以将与过孔对应的连接部位置填充，当在透明电极层上层涂覆取向膜时，减轻了与过孔对应的连接部位置对取向膜的吸附作用，通过该方法制作得到的阵列基板应用于显示装置中时避免出现色云纹，提高了显示画面的品质。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1为本发明提供的阵列基板的制作方法流程图；
图2为本发明提供的阵列基板的制作方法中形成透明电极层的一种实施方式流程图，其中，所述光刻胶层由正性光刻胶材料制成；
图3为本发明提供的阵列基板的制作方法中形成透明电极层的另一种实施方式流程图，其中，所述光刻胶层由负性光刻胶材料制成；
图4为本发明提供的阵列基板的制作方法中提供衬底的步骤流程图；
图5为本发明提供的阵列基板曝光结构示意图；
图6为本发明提供的阵列基板显影刻蚀后的结构示意图；
图7为本发明提供的阵列基板灰化后的结构示意图。
其中，10、透明基板；11、栅极；12、栅极绝缘层；13、有源层；14、数据电极；15、绝缘层；16、透明电极；17、连接部；18、填充物；19、光刻胶层；20、透光区；21、半透光区；22、遮光区。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
作为本发明的第一个方面，提供一种阵列基板的制作方法，其中，如图1所示，所述制作方法包括：
S101、提供衬底，所述衬底包括透明基板、形成在所述透明基板上的数据电极图形层以及覆盖所述数据电极图形层的绝缘层，所述数据电极图形层包括多个数据电极；
具体地，所述衬底包括透明基板，在所述透明基板上沉积数据电极材料层，并通过构图工艺获得所述数据电极图形层，在形成数据电极图形层的基底上形成覆盖所述数据电极图形层的所述绝缘层。
需要说明的是，所述数据电极材料层通常为金属层薄膜，通常采用磁控溅射的方法沉积所述金属层薄膜；其中所述构图工艺通常包括光刻胶涂覆、曝光、显影、刻蚀以及光刻胶剥离等工艺，即在沉积的所述金属层薄膜上涂覆光刻胶以覆盖所述金属层薄膜，然后利用掩膜板曝光，形成曝光区和非曝光区，通过显影去除曝光区的光刻胶(以正性光刻胶为例)，非曝光区保留光刻胶；刻蚀所述金属层薄膜，非曝光区的所述金属层薄膜由于光刻胶的保护而未被刻蚀，最后剥离光刻胶，得到所述数据电极图形层。
应当理解的是，所述衬底既可以指没有任何膜层的衬底，如透明基板，也可以指形成有其它膜层或者图案的衬底。
S102、形成贯穿所述绝缘层的过孔，以暴露出部分所述数据电极；
具体地，在完成S101步骤的基底上，通过刻蚀工艺形成贯穿所述绝缘层的过孔。
S103、形成透明电极材料层；
具体地，在完成步骤S102的基底上形成所述透明电极材料层。
S104、形成透明电极层，所述透明电极层包括透明电极和与所述透明电极相连的连接部，所述连接部位于所述过孔中，以将所述透明电极与相应的所述数据电极电连接，所述连接部上方设置有填充物。
具体地，在步骤S103的基底上通过构图工艺形成所述透明电极层，所述透明电极层包括所述透明电极和所述连接部，所述透明电极与所述连接部连接，由图5至图7可以看出，所述连接部位于步骤S102形成的所述过孔中，由前文所述可知，所述过孔暴露部分所述数据电极，而与所述透明电极连接的所述连接部位于所述过孔中与暴露的部分所述数据电极接触，所以所述过孔能够将所述透明电极和所述数据电极连接，由图5至图7还可以看出所述连接部的上方的形状与所述过孔的形状相同，在所述连接部的上方设置有填充物，可以理解的是，所述填充物至少填充部分所述连接部的上方。
本发明提供的阵列基板的制作方法，通过在连接部的上方设置填充物，以将与过孔对应的连接部位置填充，当在透明电极层上层涂覆取向膜时，减轻了与过孔对应的连接部位置对取向膜的吸附作用，通过该方法制作得到的阵列基板应用于显示装置中时避免出现色云纹，提高了显示画面的品质。
可以理解的是，当所述连接部的上方完全被所述填充物填充时，所述透明电极层的表面保持平整，当在所述透明电极层的上方涂覆取向膜时，不会影响取向膜的均匀扩散，能够保证涂覆的取向膜的均匀性，即使增厚取向膜也不会出现显示面板污渍等问题。
作为所述数据电极的一种具体地实施方式，所述数据电极包括源极和漏极，在形成贯穿所述绝缘层的过孔的步骤中，以暴露出部分所述漏极。
具体地，所述数据电极包括所述源极和漏极，所述过孔连接所述透明电极和部分所述漏极。在前文所述步骤S101中，采用磁控溅射的方法沉积源漏金属薄膜，通过构图工艺形成所述源极和所述漏极图形层。其中，所述源极和所述漏极的材料可以是钼、铝、铝钕合金、钛和铜中的一种或多种材料形成。
为了更加清楚的了解所述透明电极层的形成，作为一种具体地实施方式，如图2所示，前文所述步骤S104形成透明电极层的步骤具体可以包括：
S201、在形成有所述过孔的所述绝缘层的基底上沉积所述透明电极材料层；
具体地，在前述步骤S102完成的基底上，沉积所述透明电极材料层，优选地，所述透明电极材料为氧化铟锡材料。
S202、在所述透明电极材料层上涂覆光刻胶层；
具体地，在步骤S201完成的基底上涂覆光刻胶层，所述光刻胶层覆盖所述透明电极材料层。
当所述光刻胶层由正性光刻胶材料形成时，所述形成透明电极层的步骤还包括：
S2031、利用半色调掩膜板对所述光刻胶层进行曝光，其中，所述半色调掩膜板包括透光区、半透光区和遮光区，所述遮光区对应所述透明电极材料层上用于形成所述连接部的区域，所述半透光区对应所述透明电极材料层上用于形成所述透明电极的区域，所述透光区对应所述透明电极材料层上除上述区域之外的区域；
具体地，可以结合附图5所示，对步骤S202涂覆的光刻胶层19进行曝光，此处曝光采用的是半色调掩膜板，图5中所示的所述半色调掩膜板包括透光区20、半透光区21和遮光区22，光刻胶层19以所述正性光刻胶材料为例，为了实现连接部17上方形成填充物18，可以理解的是，在进行曝光时，所述半色调掩膜板的遮光区22与所述透明电极材料层上与所述过孔对应的连接部17所在区域对应，即图5中所示的遮光区22对应的位置。
S2041、对曝光后的所述光刻胶层进行显影，以获得保护图形；
具体地，对步骤S2031通过所述半色调掩膜板曝光后的所述光刻胶层进行显影，其中所述透光区的所述光刻胶层经过显影后完全去除了，所述半透光区的所述光刻胶层经过显影后变薄了，而所述遮光区的所述光刻胶层全部保留下来，最终获得了所述保护图形。
S2051、对设置有所述保护图形的所述透明电极材料层进行刻蚀；
具体地，对去除所述光刻胶的所述透明电极材料层进行刻蚀，获得所述透明电极层，可以理解的是，所述半透光区的所述光刻胶层经过所述刻蚀工艺后完全去除，所述遮光区的所述光刻胶层经过所述刻蚀工艺后虽然有所减薄，但还是能够填充所述连接部的上方。
如图6所示，为所述阵列基板显影刻蚀后的结构示意图，由图6和图5对比可以看出，图6中所述阵列基板上与所述半色调掩膜板的透光区20对应的光刻胶层19已经被去除，与半透光区21对应的光刻胶层19的厚度也变薄，与遮光区22对应的光刻胶层19的厚度也有所减薄，但由图6可以看出，仍能够填充连接部17的上方位置。
S2061、对所述保护图形进行灰化，以去除所述保护图形上除用于形成所述连接部的区域之外的材料。
具体地，对所述保护图形上的所述光刻胶层进行灰化，获得所述透明电极，但是所述连接部上设置的所述光刻胶层保留，以填平所述连接部上对应所述过孔的区域。可以理解的是，此处所述光刻胶作为前文所述的填充物填充在所述连接部上方。
如图7所示，为所述阵列基板灰化后的结构示意图，由图7与图6对比可以看出，经过灰化后，位于透明电极16上的光刻胶层19全部去除，获得透明电极16，连接部17上方的光刻胶层19部分去除，剩余的光刻胶填平连接部17的上方位置。
作为另一种具体地实施方式，如图3所示，前文所述步骤S104形成透明电极层的步骤具体可以包括：
S201、在形成有所述过孔的所述绝缘层的基底上沉积所述透明电极材料层；
S202、在所述透明电极材料层上涂覆光刻胶层；
可以理解的是，步骤S201和步骤S202与前文描述的步骤相同。
当所述光刻胶层由负性光刻胶材料形成时，所述形成透明电极层的步骤还包括：
S2032、利用半色调掩膜板对所述光刻胶层进行曝光，其中，所述半色调掩膜板包括透光区、半透光区和遮光区，所述透光区对应所述透明电极材料层上用于形成所述连接部的区域，所述半透光区对应所述透明电极材料层上用于形成所述透明电极的区域，所述遮光区对应所述透明电极材料层上除上述区域之外的区域。
可以理解的是，光刻胶层19由所述负性光刻胶材料形成时，由于所述负性光刻胶材料的特性与所述整形光刻胶材料的特性相反，所以在通过所述半色调掩膜板对光刻胶层19曝光时，所述半色调掩膜板上的透光区20与遮光区22与所述透明电极材料层上的对应位置相反，即所述半色调掩膜板的透光区20与所述透明电极材料层上与所述过孔对应的连接部17所在区域对应(图中未示出)。
S2042、对曝光后的所述光刻胶层进行显影，以获得保护图形；
可以理解的是，与光刻胶层19为正性光刻胶材料相反的是，在对步骤S2032通过所述半色调掩膜板曝光后的所述光刻胶层进行显影，其中所述遮光区的所述光刻胶层经过显影后完全去除了，所述半透光区的所述光刻胶层经过显影后变薄了，而所述透光区的所述光刻胶层全部保留下来，最终获得了所述保护图形。
S2052、对设置有所述保护图形的所述透明电极材料层进行刻蚀；
具体地，对去除所述光刻胶的所述透明电极材料层进行刻蚀，获得所述透明电极层，可以理解的是，所述半透光区的所述光刻胶层经过所述刻蚀工艺后完全去除，所述透光区的所述光刻胶层经过所述刻蚀工艺后虽然有所减薄，但还是能够填充所述连接部的上方。
S2062、对所述保护图形进行灰化，以去除所述保护图形上除用于形成所述连接部的区域之外的材料。
可以理解的是，步骤S2062与步骤S2061相同。
本发明提供的阵列基板的制作方法，在形成透明电极层的步骤的同时形成了连接部内的填充物，没有增加掩膜板的使用，未增加工艺的复杂度。
为了获得所述透明电极层，作为一种优选地实施方式，所述形成透明电极层的步骤还包括在对所述保护图形进行灰化的步骤之后进行的：
对图形化的所述透明电极材料层进行退火，以获得所述透明电极层。
可以理解的是，所述电极材料层上图形化的所述光刻胶层经过退火工艺后完全热固化下来，得到所述透明电极层。
当通过上述方法制作得到的所述阵列基板应用于液晶显示面板中时，为了控制液晶分子的扭曲状态，所述制作方法还包括在形成透明电极层的步骤之后进行的：
在所述透明电极层上形成取向膜。
由前文所述可知，通过前文所述的方法制作得到的所述阵列基板，其所述透明电极层上与所述过孔对应的所述连接部内设置有填充物，例如，前文设置的所述光刻胶，因此，在此基础上形成的取向膜能够避免涂覆不均的问题出现。
优选地，所述取向膜的材料包括聚酰亚胺树脂。
另外，优选地，前文所述透明电极材料层的材料包括氧化铟锡。
为了完善所述阵列基板的制作方法，如图4所示，所述提供衬底的步骤包括：
S301、在所述透明基板上形成栅极图形层，所述栅极图形层包括栅极；
具体地，在前文所述的透明基板上采用磁控溅射的方法沉积一层栅极金属层薄膜，并通过构图工艺形成包括所述栅极的所述栅极图形层。其中所述构图工艺具体可以包括光刻胶涂覆、曝光、显影、刻蚀以及光刻胶剥离等工艺。即在沉积的所述栅极金属层薄膜上涂覆光刻胶并覆盖所述栅极金属层薄膜；然后利用掩膜板进行曝光，形成曝光区和非曝光区；通过显影去除曝光区的光刻胶(以正性光刻胶为例)，非曝光区的光刻胶保留；刻蚀栅极金属层薄膜，非曝光区的栅极金属层薄膜由于光刻胶的保护而未被刻蚀，最后剥离光刻胶，形成了包括所述栅极的所述栅极图形层。
优选地，所述栅极的材料可以为钼、铝、铝钕合金、钛和铜中的一种或多种材料形成的单层或多层复合叠层。
S302、形成栅极绝缘层，以覆盖所述栅极图形层；
具体地，在完成步骤S301的基底上，采用热生长、常压化学气相沉积、低压化学气相沉积、等离子辅助体化学气相沉积、溅射等制备方法，形成所述栅极绝缘层。
S303、形成有源层图形层，以覆盖所述栅极图形层，所述有源层图形层包括与所述栅极对应的有源层，且所述有源层与所述数据电极电连接。
具体地，在完成步骤S302的基底上，沉积有源层薄膜，通过构图工艺形成所述有源层图形层，所述有源层图形层包括所述有源层，所述有源层与前文所述的数据电极电连接，当所述数据电极包括所述源极和所述漏极时，所述源极和所述漏极分别与所述有源层连接。
优选地，所述有源层图形层的材料包括非晶硅。
可以理解的是，所述阵列基板被划分为多个像素单元，每个像素单元均包括栅极、有源层、源极和漏极，如图5至图7所示的结构示意图仅示例出一个像素单元中的结构示意图，其中，栅极11形成于透明基板10上方，栅极绝缘层12形成于栅极11的上方，有源层13形成于栅极绝缘层12的上方，并与栅极11位置对应，数据电极14(具体可以是源极和漏极)位于有源层13上方的两层，并分别与有源层13连接，绝缘层15形成于数据电极14的上方，所述过孔贯穿绝缘层15，所述透明电极层形成于绝缘层15的上方，其中连接部17位于所述过孔中，透明电极16位于绝缘层15上方并与连接部17连接。
本发明提供的阵列基板的制作方法，通过将透明电极层上与贯穿绝缘层的过孔位置对应的连接部的上方设置填充物，保证了透明电极层的平整度，当在该透明电极层上涂覆取向膜时，能够使得取向膜在透明电极层的上方均匀扩散，解决了现有技术中由于过孔的吸附作用导致取向膜分布布局的问题。另外，该制作方法在解决上述问题的同时不会增加掩膜板的使用，工艺制作难度也未增加。
作为本发明的第二个方面，提供一种阵列基板，其中，所述阵列基板由前文所述的制作方法制作得到。
具体地，如图7所示，所述阵列基板包括透明基板10、设置在透明基板10上的数据电极图形层、覆盖所述数据电极图形层的绝缘层15，位于绝缘层15上方的透明电极层，其中，所述透明电极层包括透明电极16和与透明电极16连接的连接部17，所述数据电极层包括多个数据电极14，绝缘层15上设置有贯穿绝缘层15的过孔，所述过孔连接透明电极16和部分数据电极14，连接部17位于所述过孔中，连接部17的上方设置有填充物18。
优选地，所述数据电极包括源极和漏极，所述过孔连接所述透明电极和部分所述漏极。
优选地，所述填充物包括光刻胶。
优选地，所述阵列基板还包括取向膜，所述取向膜设置在所述透明电极层的上方。
另外，可以理解的是，为了完善所述阵列基板的结构，所述衬底上设置有位于所述透明基板上的栅极图形层、位于所述栅极图形层上方的栅极绝缘层，以及位于所述栅极绝缘层上方的有源层图形层，其中，所述栅极绝缘层包括栅极，所述有源层图形层包括有源层，所述栅极与所述有源层对应设置，所述有源层与所述数据电极连接，当所述数据电极包括源极和漏极时，所述源极和所述漏极分别与所述有源层连接。
关于阵列基板中使用的材料描述可以参照前文阵列基板的制作方法中的内容，此处不再赘述。
本发明提供的阵列基板，通过采用前文所述的方法制作得到，当该阵列基板应用于液晶显示面板中时，不会产生由于取向膜的增厚而导致显示面板出现污渍的问题，且当具有该阵列基板的液晶显示面板应用于显示装置中时不会出现色云纹问题，能够提高显示画面的品质。
作为本发明的第三个方面，提供一种显示装置，其中，所述显示装置包括前文所述的阵列基板。
具体地，所述显示装置包括液晶面板、手机、平板电脑、显示器、笔记本电脑等具有显示功能的产品或部件。
本发明提供的显示装置由于采用前文所述的阵列基板，提高了显示画面的品质。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (13)

1.一种阵列基板的制作方法，其特征在于，所述制作方法包括：
提供衬底，所述衬底包括透明基板、形成在所述透明基板上的数据电极图形层以及覆盖所述数据电极图形层的绝缘层，所述数据电极图形层包括多个数据电极；
形成贯穿所述绝缘层的过孔，以暴露出部分所述数据电极；
形成透明电极材料层；
形成透明电极层，所述透明电极层包括透明电极和与所述透明电极相连的连接部，所述连接部位于所述过孔中，以将所述透明电极与相应的所述数据电极电连接，所述连接部上方设置有填充物。
2.根据权利要求1所述的制作方法，其特征在于，形成透明电极层的步骤包括：
在形成有所述过孔的所述绝缘层的基底上沉积所述透明电极材料层；
在所述透明电极材料层上涂覆光刻胶层。
3.根据权利要求2所述的制作方法，其特征在于，当所述光刻胶层由正性光刻胶材料形成时，所述形成透明电极层的步骤还包括：
利用半色调掩膜板对所述光刻胶层进行曝光，其中，所述半色调掩膜板包括透光区、半透光区和遮光区，所述遮光区对应所述透明电极材料层上用于形成所述连接部的区域，所述半透光区对应所述透明电极材料层上用于形成所述透明电极的区域，所述透光区对应所述透明电极材料层上除上述区域之外的区域；
对曝光后的所述光刻胶层进行显影，以获得保护图形；
对设置有所述保护图形的所述透明电极材料层进行刻蚀；
对所述保护图形进行灰化，以去除所述保护图形上除用于形成所述连接部的区域之外的材料。
4.根据权利要求2所述的制作方法，其特征在于，当所述光刻胶层由负性光刻胶材料形成时，所述形成透明电极层的步骤还包括：
利用半色调掩膜板对所述光刻胶层进行曝光，其中，所述半色调掩膜板包括透光区、半透光区和遮光区，所述透光区对应所述透明电极材料层上用于形成所述连接部的区域，所述半透光区对应所述透明电极材料层上用于形成所述透明电极的区域，所述遮光区对应所述透明电极材料层上除上述区域之外的区域；
对曝光后的所述光刻胶层进行显影，以获得保护图形；
对设置有所述保护图形的所述透明电极材料层进行刻蚀；
对所述保护图形进行灰化，以去除所述保护图形上除用于形成所述连接部的区域之外的材料。
5.根据权利要求3或4所述的制作方法，其特征在于，所述形成透明电极层的步骤还包括在对所述保护图形进行灰化的步骤之后进行的：
对图形化的所述透明电极材料层进行退火，以获得所述透明电极层。
6.根据权利要求1至4中任意一项所述的制作方法，其特征在于，所述数据电极包括源极和漏极，在形成贯穿所述绝缘层的过孔的步骤中，以暴露出部分所述漏极。
7.根据权利要求1至4中任意一项所述的制作方法，其特征在于，所述制作方法还包括在形成透明电极层的步骤之后进行的：
在所述透明电极层上形成取向膜。
8.根据权利要求7所述的制作方法，其特征在于，所述取向膜的材料包括聚酰亚胺树脂。
9.根据权利要求1至4中任意一项所述的制作方法，其特征在于，所述透明电极材料层的材料包括氧化铟锡。
10.根据权利要求1至4中任意一项所述的制作方法，其特征在于，所述提供衬底的步骤包括：
在所述透明基板上形成栅极图形层，所述栅极图形层包括栅极；
形成栅极绝缘层，以覆盖所述栅极图形层；
形成有源层图形层，以覆盖所述栅极图形层，所述有源层图形层包括与所述栅极对应的有源层，且所述有源层与所述数据电极电连接。
11.根据权利要求10所述的制作方法，其特征在于，所述有源层图形层的材料包括非晶硅。
12.一种阵列基板，其特征在于，所述阵列基板由权利要求1至11中任意一项所述的制作方法制作得到。
13.一种显示装置，其特征在于，所述显示装置包括权利要求12所述的阵列基板。
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Application publication date: 20170531