CN106664806A - 适合用于高频电路的双面电路用基板 - Google Patents

适合用于高频电路的双面电路用基板 Download PDF

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Publication number
CN106664806A
CN106664806A CN201580042272.0A CN201580042272A CN106664806A CN 106664806 A CN106664806 A CN 106664806A CN 201580042272 A CN201580042272 A CN 201580042272A CN 106664806 A CN106664806 A CN 106664806A
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copper foil
double
circuit substrate
sided circuit
sided
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赤塚泰昌
茂木繁
小森洋和
稻叶刚志
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Daikin Industries Ltd
Nippon Kayaku Co Ltd
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Daikin Industries Ltd
Nippon Kayaku Co Ltd
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    • HELECTRICITY
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  • Manufacturing Of Printed Wiring (AREA)

Abstract

本发明提供一种双面电路用基板,其为包含含氟树脂和玻璃布的复合材料与粗糙面(与树脂接触的面)的二维粗糙度Ra小于0.2μm的铜箔的层叠体。在使用ESCA进行观察时,上述含氟树脂的表面的O的存在比例优选为1.0%以上。

Description

适合用于高频电路的双面电路用基板
技术领域
本发明涉及高频传输特性优良、且铜箔与树脂层的粘附性充分、耐水性、尺寸稳定性也优良的适合用于高频电路的双面电路用基板。
背景技术
通常,印刷布线基板中广泛使用环氧树脂、聚酰亚胺,但在频率为数十千兆赫兹的高频区域,从介电特性、吸湿性的观点出发,主要使用在铜箔上形成有含氟树脂绝缘层的层叠体。
通常,含氟树脂与金属的胶粘力不高,因此,为了提高胶粘性,需要使金属的表面粗糙化。但是,已知达到1千兆赫兹以上的高频时,信号容易在金属的表面传输(集肤效应),在成为传输线路的金属箔表面的凹凸大的情况下,电信号在凹凸部的表面而非导体的内部迂回传输,结果产生传输损耗增大的问题。专利文献1的实施例中,例示了表面粗糙度(Rz)为0.6μm~0.7μm的情况。但是,在高频电路中,例如在15千兆赫兹的情况下,据称电信号在距金属表面0.5μm的深度传输,随着频率进一步提高,该深度变浅,因此,该水平的表面粗糙度不足。
另外,含氟树脂的线膨胀率通常高达100ppm/℃以上,尺寸稳定性存在问题。专利文献2至4中记载了将含氟树脂薄膜与玻璃布组合而得到的电路用基板。专利文献2中,为了提高胶粘性,使用了带有胶粘剂的铜箔,但是胶粘剂通常为环氧树脂,因此认为其介电特性差,不适合于高频用途。另外,专利文献3中,在实施例中使用了三井金属株式会社制造的3EC(厚度18μm)作为铜箔,但根据该公司的技术资料,该铜箔的表面粗糙度Rz为5μm以上,完全不适合在高频区域使用。专利文献4中使用了表面粗糙度(Ra)为0.2μm的双面未经粗糙化处理的铜箔,但为了与含氟树脂制的绝缘基板胶粘,使用了作为四氟乙烯-全氟烷基乙烯基醚与液晶聚合物树脂的共混物的复合薄膜的胶粘用树脂薄膜。
现有技术文献
专利文献
专利文献1:日本特开2009-246201号公报
专利文献2:日本特开平1-317727号公报
专利文献3:日本特开平5-269918号公报
专利文献4:日本特开2007-98692号公报
发明内容
发明所要解决的问题
本发明的目的在于提供表面粗糙度低的铜箔与含氟树脂薄膜的粘附性以及尺寸稳定性高、且能够降低高频电路中的电信号的传输损耗的双面电路用基板。
用于解决问题的手段
本发明人发现,通过将特定的铜箔、含氟树脂薄膜和玻璃布配置于规定的位置并进行压接,即使不使用胶粘用薄膜,对表面粗糙度低的铜箔的胶粘性也高,其结果是,得到高频率下的传输损耗低、而且线膨胀率低的双面电路基板,从而完成了本发明。
即,本发明涉及:
(1)一种双面电路用基板,其为包含含氟树脂和玻璃布的复合材料与粗糙面(マット面)(与树脂接触的面)的二维粗糙度Ra小于0.2μm的铜箔的层叠体;
(2)一种双面电路用基板,其中,在两片铜箔之间交替层叠有n片含氟树脂薄膜和n-1片玻璃布的电路用基板(n为2以上且10以下的整数)中,铜箔的粗糙面(与树脂接触的面)的二维粗糙度Ra小于0.2μm;
(3)如上述(1)或(2)所述的双面电路用基板,其中,使用ESCA进行观察时,含氟树脂的表面或含氟树脂薄膜的表面的O的存在比例为1.0%以上;
(4)如上述(1)或(2)所述的双面电路用基板,其中,含氟树脂薄膜进行了表面改性;
(5)如上述(1)至(4)中任一项所述的双面电路用基板,其中,上述铜箔与上述含氟树脂薄膜之间的、沿相对于上述双面电路用基板90度方向的铜箔剥离强度为0.8N/mm以上;
(6)如上述(1)至(5)中任一项所述的双面电路用基板,其中,在将除去双面的铜箔后的该基板的厚度设为X(μm)、将使用网络分析器在20GHz下测定的该基板的传输损耗设为Y(dB/cm)的情况下,X与Y之积(X×Y)为22以下;
(7)如上述(1)至(6)中任一项所述的双面电路用基板,其中,上述含氟树脂薄膜包含四氟乙烯-全氟烷基乙烯基醚共聚物(PFA)。
发明效果
本发明的电路基板使用表面粗糙度极低的铜箔,因此,即使在高频带传输损耗也极少,另外,即使不使用胶粘用薄膜,含氟树脂薄膜层与金属的胶粘性和尺寸稳定性也优良。
具体实施方式
作为本发明中使用的铜箔,优选至少一个面的二维表面粗糙度(Ra)在小于0.2μm的范围内,更优选在0.15μm以下的范围内。表面粗糙度为0.2μm以上时,传输损耗增大,有时不满足实用性能。铜箔的种类有电解箔和轧制箔,任何一种均可以使用。作为铜箔的厚度,通常为5μm~50μm,优选为8μm~40μm。
铜箔表面可以为未处理的铜箔表面,另外,该表面可以进行金属镀敷处理,例如利用选自镍、铁、锌、金、银、铝、铬、钛、钯或锡中的一种以上金属进行镀敷处理,另外,也可以利用硅烷偶联剂等试剂对未处理的铜箔表面或上述金属镀敷处理后的铜箔表面进行处理。作为优选的金属镀敷处理,为选自镍、铁、锌、金或铝中的一种以上的金属镀敷处理,更优选为利用镍或铝的金属镀敷处理。
需要说明的是,本申请说明书中,“铜箔的粗糙面”是指配置于双面电路用基板的最外表面和最内表面的两片铜箔的、与含氟树脂接触的面。
作为含氟树脂,优选为选自由聚四氟乙烯[PTFE]、聚三氟氯乙烯[PCTFE]、乙烯[Et]-TFE共聚物[ETFE]、Et-三氟氯乙烯[CTFE]共聚物、CTFE-TFE共聚物、TFE-HFP共聚物(四氟乙烯-六氟丙烯共聚物)[FEP]、TFE-PAVE共聚物(四氟乙烯-全氟烷基乙烯基醚共聚物)[PFA]和聚偏二氟乙烯[PVdF]构成的组中的至少一种。
从电学特性(介电常数、介质损耗角正切)、耐热性等观点出发,含氟树脂更优选为选自由PFA和FEP构成的组中的至少一种含氟共聚物。
PFA为包含基于TFE的聚合单元(TFE单元)和基于PAVE的聚合单元(PAVE单元)的共聚物。上述PFA中,使用的PAVE没有特别限定,可以列举例如由下述通式(1)表示的全氟不饱和化合物:
CF2=CF-ORf1 (1)
(式中,Rf1表示全氟有机基团)
本说明书中,上述“全氟有机基团”是指与碳原子键合的氢原子全部被氟原子取代而得到的有机基团。上述全氟有机基团可以具有醚键性的氧原子。
作为上述PAVE,优选例如上述通式(1)中Rf1为碳原子数1~10的全氟烷基的物质。作为上述全氟烷基的碳原子数,更优选为1~5。具体而言,更优选为选自由全氟(甲基乙烯基醚)[PMVE]、全氟(乙基乙烯基醚)[PEVE]、全氟(丙基乙烯基醚)[PPVE]和全氟(丁基乙烯基醚)[PBVE]构成的组中的至少一种,进一步优选为选自由PMVE、PEVE和PPVE构成的组中的至少一种,从耐热性优良的观点出发,特别优选为PPVE。
上述PFA中,PAVE单元通常为1~10摩尔%,优选为1~6摩尔%,更优选为3~6摩尔%。另外,上述PFA中,相对于全部聚合单元,TFE单元和PAVE单元的合计优选为90~100摩尔%。
上述PFA可以还包含基于能够与TFE和PAVE共聚的单体的聚合单元。作为上述能够与TFE和PAVE共聚的单体,可以列举六氟丙烯、由CX1X2=CX3(CF2)mX4(式中,X1、X2和X3相同或不同,独立地表示氢原子或氟原子,X4表示氢原子、氟原子或氯原子,m表示1~10的整数)表示的乙烯基单体、由CF2=CF-OCH2-Rf2(式中,Rf2表示碳原子数1~5的全氟烷基)表示的烷基全氟乙烯基醚衍生物等。作为能够与TFE和PAVE共聚的单体,优选选自由六氟丙烯和由CF2=CF-OCH2-Rf2(式中,Rf2表示碳原子数1~5的全氟烷基)表示的烷基全氟乙烯基醚衍生物构成的组中的至少一种。
作为上述烷基全氟乙烯基醚衍生物,优选Rf2为碳原子数1~3的全氟烷基的烷基全氟乙烯基醚衍生物,更优选为CF2=CF-OCH2-CF2CF3
在PFA具有基于能够与TFE和PAVE共聚的单体的聚合单元的情况下,优选PFA中来自于能够与TFE和PAVE共聚的单体的单体单元为0~10摩尔%、TFE单元和PAVE单元合计为90~100摩尔%。更优选来自于能够与TFE和PAVE共聚的单体的单体单元为0.1~10摩尔%、TFE单元和PAVE单元合计为90~99.9摩尔%。
FEP为包含基于四氟乙烯的聚合单元(TFE单元)和基于六氟丙烯的聚合单元(HFP单元)的共聚物。
作为FEP,没有特别限定,优选TFE单元与HFP单元的摩尔比(TFE单元/HFP单元)为(70~99)/(30~1)的共聚物。更优选摩尔比为(80~97)/(20~3)。TFE单元过少时,有机械物性降低的倾向,TFE单元过多时,熔点过高,有成形性降低的倾向。
FEP优选为来自于能够与TFE和HFP共聚的单体的单体单元为0.1~10摩尔%、TFE单元和HFP单元合计为90~99.9摩尔%的共聚物。作为能够与TFE和HFP共聚的单体,可以列举PAVE、烷基全氟乙烯基醚衍生物等。
上述共聚物的各单体的含量可以通过根据单体的种类将NMR、FT-IR、元素分析、荧光X射线分析适当组合而计算。上述含氟树脂的熔体流动速率(MFR)优选为1.0g/10分钟以上,更优选为2.5g/10分钟以上,进一步优选为10g/10分钟以上。MFR的上限例如为100g/10分钟。
上述MFR是依据ASTM D3307在温度372℃、载荷5.0kg的条件下测定得到的值,本申请说明书的实施例和比较例也按照该方法进行测定。
含氟树脂的熔点优选为320℃以下,更优选为310℃以下。考虑到耐热性以及制作双面基板方面的加工性,熔点优选为290℃以上,更优选为295℃以上。
上述熔点是与使用DSC(差示扫描量热)装置以10℃/分钟的速度升温时的熔融峰对应的温度。
含氟树脂可以含有填充剂。可以添加的填充剂没有特别限定,可以列举例如二氧化硅、氧化铝、低损耗玻璃、块滑石、氧化钛、钛酸锶、氧化铍、氮化铝和氮化硼等。
作为得到含氟树脂薄膜的方法,可以列举将上述能够进行熔融加工的含氟树脂或包含该含氟树脂的组合物进行成形的方法。作为成形方法,可以列举熔融挤出成形法、溶剂浇注法、喷雾法等方法。含氟树脂薄膜可以含有填充剂,该可以含有的填充剂与上述可以添加到含氟树脂中的填充剂相同。
为了提高胶粘性,本发明中使用的含氟树脂薄膜的表面优选进行表面改性。含氟树脂薄膜的表面改性可以采用以往一直进行的电晕放电处理、辉光放电处理、等离子体放电处理、利用溅射处理等的放电处理。例如,可以通过在放电气氛中引入氧气、氮气、氢气等来控制表面自由能,除此之外,还可以将要改性的表面暴露于作为包含有机化合物的惰性气体的含有机化合物的惰性气体的气氛中,通过在电极间施加高频电压而引起放电,由此在表面生成活性种,接着引入有机化合物的官能团或者使可聚合有机化合物进行接枝聚合,由此进行表面改性。作为上述惰性气体,可以列举例如氮气、氦气、氩气等。
作为上述含有机化合物的惰性气体中的有机化合物,可以列举含有氧原子的可聚合或非聚合性有机化合物,例如为乙酸乙烯酯、甲酸乙烯酯等乙烯基酯类;甲基丙烯酸缩水甘油酯等丙烯酸酯类;乙烯基乙基醚、乙烯基甲基醚、缩水甘油基甲基醚等醚类;乙酸、甲酸等羧酸类;甲醇、乙醇、苯酚、乙二醇等醇类;丙酮、甲乙酮等酮类;乙酸乙酯、甲酸乙酯等羧酸酯类;丙烯酸、甲基丙烯酸等丙烯酸类等。这些之中,从改性后的表面不易失活、即寿命长的观点、在安全性方面容易处理的观点出发,优选乙烯基酯类、丙烯酸酯类、酮类,特别优选乙酸乙烯酯、甲基丙烯酸缩水甘油酯。
上述含有机化合物的惰性气体中的有机化合物的浓度根据其种类、要进行表面改性的含氟树脂的种类等而不同,通常为0.1~3.0容量%,优选为0.1~1.0容量%。放电条件根据作为目标的表面改性的程度、含氟树脂的种类、有机化合物的种类或浓度等适当选择即可。通常,在电荷密度为0.3~9.0W·s/cm2、优选为0.3W·s/cm2以上且小于3.0W·s/cm2的范围内进行放电处理。处理温度可以在0℃以上且100℃以下的范围的任意温度下进行。出于担心薄膜的伸长、褶皱等,优选80℃以下。
关于表面改性的程度,在利用ESCA进行观察时,O(氧原子)的存在比例为1.0%以上,优选1.2%以上,更优选1.8%以上,进一步优选2.5%以上。关于上限,没有特别规定,考虑到生产率以及对其它物性的影响,优选为15%以下。N(氮原子)的存在比例没有特别规定,优选为0.1%以上。另外,一片含氟树脂薄膜的厚度通常为10μm~100μm,更优选为20μm~80μm。
作为玻璃布,可以使用市售的玻璃布,优选为了提高与含氟树脂的亲和性而实施了硅烷偶联剂处理的玻璃布。作为玻璃布的材质,可以列举E玻璃、C玻璃、A玻璃、S玻璃、D玻璃、NE玻璃、低介电常数玻璃等,从容易获得的观点出发,优选E玻璃、S玻璃、NE玻璃。作为纤维的织法,可以为平织也可以为斜织。玻璃布的厚度通常为5μm~90μm,优选为10μm~75μm,但使用比所使用的含氟树脂薄膜薄的玻璃布。
作为将铜箔、含氟树脂和玻璃布复合化的方法,可以列举下述两种方法,考虑到生产率时,优选(i)的方法:
(i)在加热下将预先成形且经表面处理的含氟树脂的薄膜与玻璃布和铜箔进行压接的方法;
(ii)在加热下将从模具等挤出的含氟树脂的熔融物和玻璃布复合化,然后进行表面处理,在加热下与铜箔进行压接的方法。
上述加热下的压接、即热压接通常可以在250℃~400℃的范围内、在0.1~10兆帕的压力下进行1~20分钟。关于热压接温度,达到高温时,有可能引起树脂的渗出、厚度的不均匀化,优选低于340℃,更优选为330℃以下。热压接可以使用压力机间歇地进行,另外,也可以使用高温层压机连续地进行。在使用压力机的情况下,为了防止空气的裹入、使含氟树脂容易进入玻璃布内,优选使用真空压力机。在含氟树脂难以进入玻璃布内的情况下,容易产生下述问题:在形成通孔时,镀液渗透到玻璃布内,在通孔间产生短路。
进行了表面处理的含氟树脂薄膜单独无法与表面粗糙度低的铜箔充分地胶粘,在热压接时从铜箔渗出,也无法实现厚度的均匀化,通过如上所述与玻璃布复合化,线膨胀率充分降低,而且树脂的渗出也降低,即使对表面粗糙度Ra小于0.2μm的铜箔也显示出高胶粘性。
权利要求2的双面电路用基板具有在两片铜箔之间交替层叠有n片含氟树脂薄膜和n-1片玻璃布的构成(n为2~10的整数)。n的值优选8以下,进一步优选6以下。通过改变含氟树脂薄膜的厚度、玻璃布的种类和n的值,可以改变本发明的介电体层的XY方向的线膨胀率,但线膨胀率的值优选为5~50ppm/℃的范围内,进一步优选为10~40ppm/℃的范围内。介电体层的线膨胀率超过50ppm/℃时,铜箔与介电体层的粘附性降低,另外,铜箔蚀刻后容易产生基板的翘曲、起伏等不良情况。需要说明的是,配置于玻璃布的上下的含氟树脂薄膜在热压时渗透到玻璃布中,填充空隙,从而形成相互渗透的结构。
包含含氟树脂(薄膜)和玻璃布的介电体层中,优选玻璃纤维的一部分或全部存在于自包含含氟树脂的表面起深度为1μm~50μm处。通过玻璃纤维的一部分或全部存在于上述深度范围,铜箔的剥离强度良好,而且能够抑制由熔融焊料等的热导致的变形等。
本发明中,高频电路不仅包括包含仅传输高频信号的电路的电路,也包括在同一平面上并设有将高频信号转换为低频信号并将所生成的低频信号向外部输出的传输线路、用于供给为了驱动高频对应部件而供给的电源的传输线路等传输非高频信号的信号的传输线路的电路。
本发明的双面电路用基板的传输损耗越小越优选,但是已知传输损耗受到基板的厚度的影响,难以仅利用传输损耗的绝对值评论基板特性的优劣。对于本发明的双面电路用基板,将基板的厚度也考虑在内,在将从双面电路基板中除去双面的铜箔后的基板的厚度设为X(μm)、将使用网络分析器在20GHz下测定的该基板的传输损耗设为Y(dB/cm)的情况下,优选满足X与Y之积(X×Y)为22以下的关系,更优选满足X与Y之积为20以下的关系,进一步优选满足X与Y之积为18以下的关系。
实施例
以下,基于实施例和比较例更具体地对本发明进行说明,但是本发明并不限定于以下的实施例。
(铜箔表面的测定方法)
使用株式会社小坂研究所制造的SE-500,利用触针法测定铜箔的二维表面粗糙度Ra。
(含氟树脂表面的ESCA分析)
利用X射线光电子能谱装置(株式会社岛津制作所制造的ESCA-750)进行测定。
(铜箔-PFA薄膜层间的胶粘强度(剥离强度)的测定方法)
依据JIS C5016-1994,以每分钟50mm的速度将铜箔(厚度18μm)沿相对于铜箔除去面为90°的方向剥离,同时利用拉伸试验机测定铜箔的剥离强度,将所得到的值作为胶粘强度。
(介电体层的线膨胀率的测定方法)
依据JIS 6911,利用TMA(热机械测定装置)进行测定。
(介电常数、介质损耗角正切的测定方法)
对所制作的双面基板的铜箔进行蚀刻,然后利用空腔谐振器(关东电子应用开发株式会社制造)在1GHz下进行测定,利用网络分析器(安捷伦科技株式会社制造、型号8719ET)进行分析。
(传输损耗的测定方法)
通过蚀刻制成长度10cm的微带线,使用网络分析器测定20GHz下的传输损耗。
实施例1
准备两片表面粗糙度Ra为0.08μm的厚度18μm的未粗糙化处理电解铜箔(福田金属箔粉工业株式会社制造、产品名CF-T9DA-SV-18)、两片厚度50μm的对双面实施了表面处理(将薄膜在60℃~65℃预热,在电晕放电装置的放电电极和辊状接地电极(60℃)的附近通入含有0.13体积%乙酸乙烯酯的氮气,同时使薄膜伴随辊状接地电极连续地通过,以1.7w·s/cm2的电荷密度对薄膜的双面进行电晕放电处理)、利用ESCA表面分析得到的表面的O(氧原子)的存在比例为2.62%的四氟乙烯-全氟烷基乙烯基醚共聚物(PFA)薄膜(TFE/PPVE=98.5/1.5(摩尔%)、MFR:14.8g/10分钟、熔点:305℃)、一片厚度16μm的玻璃布(株式会社有泽制作所制造IPC型号1027),将铜箔的粗糙面作为内侧,按照铜箔/PFA薄膜/玻璃布/PFA薄膜/铜箔的顺序层叠,使用真空压力机在325℃下进行30分钟热压,由此制成厚度为134μm的本发明的双面基板1。
实施例2
代替实施例1中实施了双面处理的PFA薄膜,使用两片在与实施例1相同的条件下仅对单面实施表面处理、处理面的利用ESCA表面分析得到的O(氧原子)的存在比例为2.62%、非处理面的利用ESCA表面分析得到的O的存在比例为0.61%的四氟乙烯-全氟烷基乙烯基醚共聚物(PFA)薄膜(TFE/PPVE=98.5/1.5(摩尔%)、MFR:14.8g/10分钟、熔点:305℃),以铜箔的粗糙面与PFA薄膜的处理面相向的方式按照铜箔/PFA薄膜/玻璃布/PFA薄膜/铜箔的顺序层叠,除此以外,以同样的方式制成厚度为132μm的本发明的双面基板2。
比较例1
将实施例1中的铜箔替换为粗糙度Ra为0.39μm的经粗糙化处理电解铜箔(福田金属箔粉工业株式会社制造、产品名CF-V9W-SV-18),除此以外,以同样的方式制成厚度为135μm的双面基板3。
比较例2
代替实施例1中实施了双面处理的PFA薄膜,使用两片双面均未进行表面处理、利用ESCA表面分析得到的O(氧原子)的存在比例为0.61%的四氟乙烯-全氟烷基乙烯基醚共聚物(PFA)薄膜(TFE/PPVE=98.5/1.5(摩尔%)、MFR:14.8g/10分钟、熔点:305℃),除此以外,以同样的方式制成厚度为131μm的本发明的双面基板4。
比较例3
实施例1中,除去玻璃布,按照铜箔/PFA薄膜/PFA薄膜/铜箔的顺序层叠,除此以外,同样地操作,制成双面基板5。
测定上述双面基板1、2、3、4、5中的铜箔与含氟树脂层的剥离强度。另外,对铜箔进行蚀刻,测定绝缘体层的介电常数、介质损耗角正切和线膨胀率。然后,制成微带线,测定20GHz下的传输损耗。将结果示于下述表1。
[表1]
由上表可知如下内容。
1.由实施例与比较例1的对比可知,使用表面粗糙度小的铜箔的本发明电路的传输损耗减少约7成。
2.由实施例与比较例2的对比可知,使使用ESCA进行表面观察时O(氧原子)的存在比例为1.0%以上的进行了表面处理的含氟树脂薄膜与铜箔接触而得到的本发明的基板的铜箔剥离强度较强。使用未进行表面处理的含氟树脂薄膜的比较例2中,含氟树脂与铜箔的剥离强度低至0.3N/mm,容易剥离,无法制成电路图案。
3.由实施例与比较例3的对比可知,使用玻璃布的本发明电路的线膨胀率较小,铜箔剥离强度也较强。未使用玻璃布的比较例3中,使用ESCA进行表面观察时含氟树脂薄膜的O(氧原子)的存在比例为1.0%以上的面虽然与铜箔胶粘,但是其剥离强度低至1.4,另外,压制时树脂从铜箔流出,厚度减小至平均66μm,而且厚度不均匀,因此无法测定传输损耗。
根据本发明,能够容易地制造线膨胀率小、铜箔剥离强度强、而且高频下的传输损耗少的双面电路用基板,因此在工业上极为有用。

Claims (7)

1.一种双面电路用基板,其为包含含氟树脂和玻璃布的复合材料与粗糙面(与树脂接触的面)的二维粗糙度Ra小于0.2μm的铜箔的层叠体。
2.一种双面电路用基板,其中,在两片铜箔之间交替层叠有n片含氟树脂薄膜和n-1片玻璃布的电路用基板(n为2以上且10以下的整数)中,铜箔的粗糙面(与树脂接触的面)的二维粗糙度Ra小于0.2μm。
3.如权利要求1或2所述的双面电路用基板,其中,使用ESCA进行观察时,含氟树脂的表面或含氟树脂薄膜的表面中的O的存在比例为1.0%以上。
4.如权利要求1所述的双面电路用基板,其中,含氟树脂薄膜进行了表面改性。
5.如权利要求1至4中任一项所述的双面电路用基板,其中,所述铜箔与所述含氟树脂薄膜之间的、沿相对于所述双面电路用基板为90度的方向的铜箔剥离强度为0.8N/mm以上。
6.如权利要求1至5中任一项所述的双面电路用基板,其中,在将除去双面的铜箔后的该基板的厚度设为X(μm)、将使用网络分析器在20GHz下测定的该基板的传输损耗设为Y(dB/cm)的情况下,X与Y之积(X×Y)为22以下。
7.如权利要求1至6中任一项所述的双面电路用基板,其中,所述含氟树脂薄膜包含四氟乙烯-全氟烷基乙烯基醚共聚物(PFA)。
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