CN106663596B - 包括在缓冲层堆叠上的iii-v型有源半导体层的半导体结构和用于生产半导体结构的方法 - Google Patents

包括在缓冲层堆叠上的iii-v型有源半导体层的半导体结构和用于生产半导体结构的方法 Download PDF

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CN106663596B
CN106663596B CN201580041512.5A CN201580041512A CN106663596B CN 106663596 B CN106663596 B CN 106663596B CN 201580041512 A CN201580041512 A CN 201580041512A CN 106663596 B CN106663596 B CN 106663596B
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buffer layer
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buffer
relaxation
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CN106663596A (zh
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乔夫·德卢伊
斯蒂芬·迪格鲁特
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EpiGan NV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN201580041512.5A 2014-08-04 2015-07-22 包括在缓冲层堆叠上的iii-v型有源半导体层的半导体结构和用于生产半导体结构的方法 Active CN106663596B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14179690.4 2014-08-04
EP14179690.4A EP2983195A1 (en) 2014-08-04 2014-08-04 Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure
PCT/EP2015/066785 WO2016020196A1 (en) 2014-08-04 2015-07-22 Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure

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CN106663596B true CN106663596B (zh) 2019-11-22

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US (1) US9991346B2 (https=)
EP (2) EP2983195A1 (https=)
JP (1) JP6484328B2 (https=)
KR (1) KR101899742B1 (https=)
CN (1) CN106663596B (https=)
TW (1) TWI655790B (https=)
WO (1) WO2016020196A1 (https=)

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CN108886000A (zh) * 2016-02-26 2018-11-23 三垦电气株式会社 半导体基体以及半导体装置
CN106876253B (zh) * 2017-03-10 2019-06-04 成都海威华芯科技有限公司 一种锐角金属图形剥离方法
WO2019069604A1 (ja) * 2017-10-06 2019-04-11 パナソニックＩｐマネジメント株式会社 半導体発光素子
CN111492464B (zh) * 2017-11-22 2024-11-08 Iqe公司 应变平衡的半导体结构
CN108598234A (zh) * 2018-04-26 2018-09-28 吉林大学 一种降低SiC衬底上GaN薄膜内张应力的外延结构及其制备方法
JP7158272B2 (ja) * 2018-12-25 2022-10-21 エア・ウォーター株式会社 化合物半導体基板
TWI701717B (zh) 2019-08-12 2020-08-11 環球晶圓股份有限公司 磊晶結構
KR102874457B1 (ko) * 2019-10-17 2025-10-20 삼성전자주식회사 반도체 박막 구조체 및 이를 포함하는 전자 소자
CN110783395B (zh) * 2019-11-06 2022-10-14 錼创显示科技股份有限公司 半导体结构
TWI730494B (zh) * 2019-11-06 2021-06-11 錼創顯示科技股份有限公司 半導體結構
TWI735212B (zh) * 2020-04-24 2021-08-01 環球晶圓股份有限公司 具有超晶格疊層體的磊晶結構
JP7061214B2 (ja) * 2020-08-06 2022-04-27 信越化学工業株式会社 半導体積層体、半導体素子および半導体素子の製造方法
TWI908837B (zh) * 2021-07-23 2025-12-21 晶元光電股份有限公司 半導體元件
CN114464711B (zh) * 2021-12-31 2024-06-25 山东大学 一种深紫外发光二极管及其制备方法
FR3166240A1 (fr) 2024-09-12 2026-03-13 Soitec Substrat intermediaire pour la fabrication d’un substrat pour transistor a haute mobilite d’electrons

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EP3178107C0 (en) 2024-11-27
JP2017529692A (ja) 2017-10-05
EP3178107B8 (en) 2025-01-01
TW201611330A (zh) 2016-03-16
CN106663596A (zh) 2017-05-10
JP6484328B2 (ja) 2019-03-13
TWI655790B (zh) 2019-04-01
KR101899742B1 (ko) 2018-09-17
US20170229549A1 (en) 2017-08-10
EP3178107B1 (en) 2024-11-27
EP2983195A1 (en) 2016-02-10
WO2016020196A1 (en) 2016-02-11
US9991346B2 (en) 2018-06-05
KR20170041227A (ko) 2017-04-14
EP3178107A1 (en) 2017-06-14

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