CN106574387A - 铜‑镍合金电镀浴 - Google Patents
铜‑镍合金电镀浴 Download PDFInfo
- Publication number
- CN106574387A CN106574387A CN201580041242.8A CN201580041242A CN106574387A CN 106574387 A CN106574387 A CN 106574387A CN 201580041242 A CN201580041242 A CN 201580041242A CN 106574387 A CN106574387 A CN 106574387A
- Authority
- CN
- China
- Prior art keywords
- copper
- electroplating bath
- salt
- nickel alloy
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009713 electroplating Methods 0.000 title claims abstract description 54
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 51
- 239000000956 alloy Substances 0.000 title claims abstract description 51
- 229910000570 Cupronickel Inorganic materials 0.000 title claims abstract description 39
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 title claims abstract description 39
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 16
- 239000011593 sulfur Substances 0.000 claims abstract description 16
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 10
- 150000002815 nickel Chemical class 0.000 claims abstract description 9
- 150000003839 salts Chemical class 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 230000033116 oxidation-reduction process Effects 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 239000002738 chelating agent Substances 0.000 claims description 10
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 7
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000007800 oxidant agent Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 239000006174 pH buffer Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229960002163 hydrogen peroxide Drugs 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 239000008139 complexing agent Substances 0.000 abstract 1
- 150000001879 copper Chemical class 0.000 abstract 1
- -1 nickel salt Chemical class 0.000 description 29
- 238000007747 plating Methods 0.000 description 28
- 150000001875 compounds Chemical class 0.000 description 17
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 11
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 9
- 125000000217 alkyl group Chemical group 0.000 description 9
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 8
- 235000001014 amino acid Nutrition 0.000 description 8
- 150000001413 amino acids Chemical class 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 150000005846 sugar alcohols Polymers 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 229910001431 copper ion Inorganic materials 0.000 description 6
- BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical compound [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 229910001502 inorganic halide Inorganic materials 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- IZYPWOJOOJLPQP-UHFFFAOYSA-N C1=CC=C2SC([S])=NC2=C1 Chemical compound C1=CC=C2SC([S])=NC2=C1 IZYPWOJOOJLPQP-UHFFFAOYSA-N 0.000 description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 4
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 229910052500 inorganic mineral Inorganic materials 0.000 description 4
- 239000011707 mineral Substances 0.000 description 4
- 235000010755 mineral Nutrition 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 239000001294 propane Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- 159000000003 magnesium salts Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000003002 pH adjusting agent Substances 0.000 description 3
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 159000000000 sodium salts Chemical class 0.000 description 3
- 229940124530 sulfonamide Drugs 0.000 description 3
- 150000003456 sulfonamides Chemical class 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Natural products OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 125000001118 alkylidene group Chemical group 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 235000015165 citric acid Nutrition 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000174 gluconic acid Substances 0.000 description 2
- 235000012208 gluconic acid Nutrition 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000003014 ion exchange membrane Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
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- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
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- 239000001117 sulphuric acid Substances 0.000 description 2
- 235000011149 sulphuric acid Nutrition 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- KQTIIICEAUMSDG-UHFFFAOYSA-N tricarballylic acid Chemical compound OC(=O)CC(C(O)=O)CC(O)=O KQTIIICEAUMSDG-UHFFFAOYSA-N 0.000 description 2
- FTLYMKDSHNWQKD-UHFFFAOYSA-N (2,4,5-trichlorophenyl)boronic acid Chemical compound OB(O)C1=CC(Cl)=C(Cl)C=C1Cl FTLYMKDSHNWQKD-UHFFFAOYSA-N 0.000 description 1
- DWNBOPVKNPVNQG-LURJTMIESA-N (2s)-4-hydroxy-2-(propylamino)butanoic acid Chemical compound CCCN[C@H](C(O)=O)CCO DWNBOPVKNPVNQG-LURJTMIESA-N 0.000 description 1
- UWFRVQVNYNPBEF-UHFFFAOYSA-N 1-(2,4-dimethylphenyl)propan-1-one Chemical compound CCC(=O)C1=CC=C(C)C=C1C UWFRVQVNYNPBEF-UHFFFAOYSA-N 0.000 description 1
- MGBXORKSOAIYBO-UHFFFAOYSA-N 1-(hydroxydisulfanyl)butane Chemical class C(CCC)SSO MGBXORKSOAIYBO-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- BYUKOOOZTSTOOH-UHFFFAOYSA-N 2-(2-sulfoethyldisulfanyl)ethanesulfonic acid Chemical compound OS(=O)(=O)CCSSCCS(O)(=O)=O BYUKOOOZTSTOOH-UHFFFAOYSA-N 0.000 description 1
- RXQXJZDPDXVIEN-UHFFFAOYSA-N 2-azaniumyl-3-(2-azaniumyl-2-carboxylatoethyl)sulfonylsulfanylpropanoate Chemical compound OC(=O)C(N)CSS(=O)(=O)CC(N)C(O)=O RXQXJZDPDXVIEN-UHFFFAOYSA-N 0.000 description 1
- HSXUNHYXJWDLDK-UHFFFAOYSA-N 2-hydroxypropane-1-sulfonic acid Chemical class CC(O)CS(O)(=O)=O HSXUNHYXJWDLDK-UHFFFAOYSA-N 0.000 description 1
- RSNVLCAXJNGKPQ-UHFFFAOYSA-N 3-(3-aminopropyldisulfanyl)propan-1-amine Chemical compound NCCCSSCCCN RSNVLCAXJNGKPQ-UHFFFAOYSA-N 0.000 description 1
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- RCXHRHWRRACBTK-UHFFFAOYSA-N 3-(oxiran-2-ylmethoxy)propane-1,2-diol Chemical compound OCC(O)COCC1CO1 RCXHRHWRRACBTK-UHFFFAOYSA-N 0.000 description 1
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Abstract
本发明提供一种铜‑镍合金电镀浴,其含有(a)铜盐和镍盐、(b)金属络合剂、(c)导电性赋予盐、(d)含硫有机化合物和(e)氧化还原电位调节剂。
Description
技术领域
本发明涉及一种铜-镍合金电镀浴。更具体地,本发明涉及一种铜-镍合金电镀浴,其能够在宽的电流密度范围内在被镀物上获得由任何合金比率的铜和镍组成且组成均匀的电镀层,其具有优良的浴稳定性,并且能够长时间连续使用。
背景技术
通常,通过改变铜和镍的比例,铜-镍合金在耐腐蚀性、延展性、加工性能和高温特性方面表现出优异的性能,并且还在电阻率、热阻系数、热电动势、热膨胀系数等方面有着固有特性。因此,迄今为止已经进行了研究以通过电镀获得铜-镍合金的这种性质。作为常规尝试的铜-镍合金电镀浴,已经研究了多种浴,包括氰化物浴、柠檬酸浴、乙酸浴、酒石酸浴、硫代硫酸浴、氨浴和焦磷酸浴等;然而,这些浴中没有一种已经实用化。铜-镍合金电镀没有实用化的原因包括:(i)铜和镍在析出电位上相差约0.6V,使得铜优先析出;(ii)电镀浴不稳定,从而产生不溶性化合物如金属氢氧化物等;(iii)电镀组成由于通电而变化,使得不能稳定地获得具有均匀组成的涂层;(iv)液体的使用寿命短;等等。
发明内容
为了解决这些问题,本发明的目的是提供一种铜-镍合金电镀浴:
(1)其能够以任何的合金比例在被镀物上析出铜和镍;
(2)其还能够在宽的电流密度范围内获得具有均匀组成的电镀层;
(3)具有优异的浴稳定性;和
(4)其能够长时间连续使用。
作为认真研究的结果,本发明人已经发现,可以通过使用含有(a)铜盐和镍盐;(b)金属络合剂;(c)导电性赋予盐;和(d)含硫有机化合物,并且包括(e)氧化还原电位调节剂的铜-镍合金电镀浴作为铜-镍合金电镀浴,调节铜-镍合金电镀浴中的氧化还原电位(以下有时称为ORP)使其在电镀操作期间恒定地保持在20mV以上(参比电极Ag/AgCl),并且当阴极(被镀物)和阳极之间进行通电(电解)时也调整电镀浴的ORP使其恒定在20mV以上(参比电极Ag/AgCl),来实现上述目的。换句话说,本发明提供一种铜-镍合金电镀浴,其含有:(a)铜盐和镍盐;(b)金属络合剂;(c)导电性赋予盐;(d)含硫有机化合物;和(e)氧化还原电位调节剂。
根据本发明,可以提供一种铜-镍合金电镀浴:
(1)其能够在被镀物上以任何的合金比例析出铜和镍;
(2)其还能够在宽的电流密度范围内获得具有均匀组成的电镀层;
(3)具有优异的浴稳定性;和
(4)其能够长时间连续使用。
具体实施方式
本发明的铜-镍合金电镀浴含有:(a)铜盐和镍盐;(b)金属络合剂;(c)导电性赋予盐;(d)含硫有机化合物;和(e)氧化还原电位调节剂。
(a)铜盐和镍盐
铜盐包括但不限于:硫酸铜、卤化铜(II)、氨基磺酸铜、甲磺酸铜,乙酸铜(II)、碱式碳酸铜等。这些铜盐可以单独使用,也可以两种以上混合使用。镍盐包括但不限于:硫酸镍、卤化镍、碱式碳酸镍、氨基磺酸镍、乙酸镍、甲烷磺酸镍等。这些镍盐可以单独使用,也可以两种以上混合使用。镀浴中铜盐和镍盐的浓度必须根据所需的电镀层的组成以各种方式选择。然而,铜离子的浓度优选为0.5~40g/L,更优选为2~30g/L,镍离子的浓度优选为0.25~80g/L,更优选为0.5~50g/L。另外,镀浴中的铜离子和镍离子的总浓度优选为0.0125~2mol/L,更优选为0.04~1.25mol/L。
(b)金属络合剂
金属络合剂使金属稳定,所述金属是铜和镍。金属络合剂包括但不限于:单羧酸、二羧酸、多羧酸、羟基羧酸、酮羧酸、氨基酸和氨基羧酸,以及它们的盐等。具体地,可举出丙二酸、马来酸、琥珀酸、丙三羧酸、柠檬酸、酒石酸、苹果酸、葡糖酸、2-磺乙基亚氨基-N,N-二乙酸、亚氨基二乙酸、次氮基三乙酸、EDTA、三亚乙基二胺四乙酸、羟乙基亚氨基二乙酸、谷氨酸、天冬氨酸、β-丙氨酸-N,N-二乙酸等。其中,优选丙二酸、柠檬酸、苹果酸、葡萄糖酸、EDTA、次氮基三乙酸和谷氨酸。此外,包括这些羧酸的盐,所述盐包括但不限于:镁盐、钠盐、钾盐、铵盐等。这些金属络合剂可以单独使用,也可以两种以上混合使用。电镀浴中的金属络合剂的浓度优选为浴中的金属离子浓度(摩尔浓度)的0.6~2倍,更优选为0.7~1.5倍。
c)导电性赋予盐
导电性赋予盐为铜-镍合金电镀浴提供导电性。在本发明中,导电性赋予盐可举出无机卤化盐、无机硫酸盐、低级烷烃(优选C1-C4)磺酸盐和烷醇(优选C1-C4)磺酸盐。
无机卤化盐包括但不限于:镁、钠、钾和铵的氯化盐、溴化盐和碘化盐等。这些无机卤化盐可以单独使用,也可以两种以上混合使用。无机卤化盐在电镀浴中的浓度优选为0.1~2mol/L,更优选为0.2~1mol/L。
无机硫酸盐包括但不限于:硫酸镁、硫酸钠、硫酸钾、硫酸铵等。这些无机硫酸盐可以单独使用,也可以两种以上混合使用。
低级烷烃磺酸盐和烷醇磺酸盐包括但不限于:镁盐、钠盐、钾盐、铵盐等,更具体地包括甲磺酸和2-羟基丙磺酸的镁盐、钠盐、钾盐和铵盐等。这些磺酸盐可以单独使用,也可以两种以上混合使用。
镀浴中的硫酸盐和/或磺酸盐的浓度优选为0.25~1.5mol/L,更优选为0.5~1.25mol/L。
此外,更有效的是使用彼此不同的多种导电性赋予盐作为导电性赋予盐。优选导电性赋予盐含有无机卤化盐和从由无机硫酸盐和前述磺酸盐组成的组中选择的盐。
(d)含硫有机化合物
含硫有机化合物优选可举出从由二硫化物、含硫氨基酸、苯并噻唑基硫基化合物以及它们的盐组成的组中选择的化合物。
二硫化物包括但不限于由通式(I)表示的二硫化物等:
A-R1-S-S-R2-A (I)
(式中R1和R2表示烃基,A表示SO3Na基团、SO3H基团、OH基团、NH2基团或NO2基团)。
在该式中,烃基优选为亚烷基,更优选为具有1~6个碳原子的亚烷基。二硫化物化合物的具体例包括但不限于:二硫化双-(磺乙基钠)、二硫化双-(磺丙基钠)、二硫化双-(磺戊基钠)、二硫化双-(磺己基钠)、双磺乙基二硫化物、双磺丙基二硫化物、双磺戊基二硫化物、双氨乙基二硫化物、双氨丙基二硫化物、双氨丁基二硫化物、双氨戊基二硫化物、双羟乙基二硫化物、双羟丙基二硫化物、双羟丁基二硫化物、双羟戊基二硫化物、双硝乙基二硫化物、双硝丙基二硫化物、双硝丁基二硫化物、二硫化磺乙基丙基钠、磺丁基丙基二硫化物等。在这些二硫化物化合物中,优选二硫化双-(磺丙基钠)、二硫化双(磺丁基钠)和双氨丙基二硫化物。
含硫氨基酸包括但不限于由通式(II)表示的含硫氨基酸等:
R-S-(CH2)nCHNHCOOH (II)
(式中R表示烃基、-H或-(CH2)nCHNHCOOH,且n各自独立地为1至50。)
在该式中,优选的烃基为烷基,更优选为具有1~6个碳原子的烷基。含硫氨基酸的具体例包括但不限于:甲硫氨酸、胱氨酸、半胱氨酸、乙硫氨酸、胱氨酸二亚砜、胱硫醚等。
苯并噻唑基硫基化合物包括但不限于由通式(III)表示的苯并噻唑基化合物等:
(式中R表示烃基、-H或-(CH2)nCOOH。)在该式中,优选的烃基为烷基,更优选为具有1~6个碳原子的烷基。此外,n=1~5。苯并噻唑基硫基化合物的具体包括但不限于:(2-苯并噻唑基硫基)乙酸、3-(2-苯并噻唑基硫基)丙酸等。此外,它们的盐包括但不限于:硫酸盐、卤化盐、甲磺酸盐、氨基磺酸盐、乙酸盐等。
这些二硫化合物、含硫氨基酸和苯并噻唑基硫基化合物以及它们的盐可以单独使用,或者可以两种以上混合使用。在电镀浴中,从由二硫化合物、含硫氨基酸和苯并噻唑基硫基化合物以及它们的盐组成的组中选择的化合物的浓度优选为0.01~10g/L,更优选为0.05~5g/L。
此外,更有效的是并用从由二硫化合物、含硫氨基酸和苯并噻唑基硫基化合物以及它们的盐组成的组中选择的化合物,以及从由磺酸化合物、硫酰亚胺化合物、氨基磺酸化合物和磺酰胺类以及它们的盐组成的组中选择的化合物作为含硫有机化合物。从由磺酸化合物、磺酰亚胺化合物、氨基磺酸化合物和磺酰胺类以及它们的盐组成的组中选择的化合物的并用使得铜-镍合金电镀层致密化。
磺酸化合物及其盐包括但不限于:芳族磺酸、烯烃磺酸和炔烃磺酸以及它们的盐。具体地,可举出但不限于:1,5-萘二磺酸钠、1,3,6-萘三磺酸钠、2-丙烯-1-磺酸钠等。
磺酰亚胺化合物及其盐包括但不限于:苯甲酰硫酰亚胺(糖精)及其盐等。具体地,可举出但不限于:糖精钠等。
氨基磺酸化合物及其盐包括但不限于:乙酰磺胺酸钾、N-环己基氨基磺酸钠等。
磺酰胺及其盐包括但不限于:对甲苯磺酰胺等。
这些磺酸化合物、硫酰亚胺化合物、氨基磺酸化合物和磺酰胺以及它们的盐可以单独使用,或者可以两种以上混合使用。在电镀浴中,从由磺酸化合物、硫酰亚胺化合物、氨基磺酸化合物和磺酰胺及它们的盐组成的组中选择的化合物的浓度优选为0.2~5g/L,更优选为0.4~4g/L。
(e)ORP调节剂
氧化还原电位调节剂优选为氧化剂,例如为无机或有机氧化剂。这种氧化剂例如包括过氧化氢溶液和水溶性含氧酸,以及它们的盐。水溶性含氧酸及其盐包括无机含氧酸和有机含氧酸。
当在阴极(被镀物)和阳极之间通电进行电镀时,二价铜离子通过还原反应作为金属铜析出在阴极上,随后,析出的金属铜通过溶解反应等产生一价铜离子。然后,这种一价铜离子的产生降低了镀浴的氧化还原电位。推测ORP调节剂起到一价铜离子的氧化剂的作用,其将一价铜离子氧化为二价铜离子,从而防止了电镀浴的氧化还原电位的降低。
优选的无机含氧酸包括:卤素含氧酸(如次氯酸、亚氯酸、氯酸、高氯酸和溴酸)及其碱金属盐,硝酸及其碱金属盐,以及过硫酸及其碱金属盐。
优选的有机含氧酸及其盐包括:芳族磺酸盐(如3-硝基苯磺酸钠)和过羧酸盐(如过乙酸钠)。
另外,作为pH缓冲剂使用的水溶性无机化合物和有机化合物及其碱金属盐也可以用作ORP调节剂。这种ORP调节剂,优选包括硼酸、磷酸和碳酸以及它们的碱金属盐等,以及羧酸(如甲酸、乙酸和琥珀酸)以及其碱金属盐等。
这些ORP调节剂可以各自单独使用,也可以两种以上混合使用。当ORP调节剂是氧化剂时,其添加量通常在0.01~5g/L的范围内,优选在0.05~2g/L的范围内。当ORP调节剂是pH缓冲液时,其添加量通常在2~60g/L的范围内,优选在5~40g/L的范围内。
在本发明中,在电镀操作期间,铜-镍合金电镀浴中的氧化还原电位(ORP)需要在电镀浴温度下恒定保持在20mV(参比电极(vs.)Ag/AgCl)以上。当进行电镀时(通电时),氧化还原电位通常随时间降低,在这种情况下,为了使氧化还原电位(ORP)恒定保持在20mV(vs.Ag/AgC1)以上,也可以适当地追加使用氧化还原电位调节剂。
如果浴中的氧化还原电位(ORP)变为20mV(vs.Ag/AgC1)以下,则镀层的析出变得粗糙,导致形成凹凸不平的表面。另外,虽然在浴中的氧化还原电位(ORP)没有上限,但若在350mV(vs.Ag/AgCl)以上,则会对浴中含有的有机物(即(b)金属络合剂、(d)含硫有机化合物等)造成影响,从而可能会降低它们的效果,因此不优选。
在本发明中,通过使铜-镍合金电镀浴中含有表面活性剂,可以提高电镀组成的均匀性和电镀表面的平滑性。表面活性剂包括具有环氧乙烷或环氧丙烷的可聚合基团或具有环氧乙烷和环氧丙烷的可共聚基团的水溶性表面活性剂,以及水溶性合成高分子。
作为水溶性表面活性剂,可以使用任何的阴离子表面活性剂、阳离子表面活性剂、两性表面活性剂和非离子表面活性剂而不考虑离子性,但优选非离子表面活性剂。尽管具有环氧乙烷或环氧丙烷的可聚合基团或环氧乙烷和环氧丙烷的可共聚基团,但是它们的聚合度为5至250,优选10至150。这些水溶性表面活性剂可以单独使用,或者两种以上混合使用。电镀浴中的水溶性表面活性剂的浓度优选为0.05~5g/L,更优选为0.1~2g/L。
水溶性合成高分子包括缩水甘油醚和多元醇的反应产物。缩水甘油醚和多元醇的反应产物使得铜-镍合金电镀层致密化,并且有效地使电镀组成均匀。
作为缩水甘油醚和多元醇的反应产物的反应原料的缩水甘油醚包括但不限于:分子中含有两个以上环氧基的缩水甘油醚,以及分子中含有一个以上羟基和一个以上环氧基的缩水甘油醚等。具体地,缩水甘油醚为缩水甘油、甘油缩水甘油醚、乙二醇二缩水甘油醚、聚乙二醇缩水甘油醚、聚丙二醇缩水甘油醚、山梨醇缩水甘油醚等。
多元醇包括但不限于乙二醇、丙二醇、甘油、聚甘油等。
缩水甘油醚和多元醇的反应产物优选是通过缩水甘油醚的环氧基和多元醇的羟基之间的缩合反应获得的水溶性聚合物。
这些缩水甘油醚和多元醇的反应产物可以单独使用,或者可以两种以上混合使用。电镀浴中的缩水甘油醚和多元醇的反应产物的浓度优选为0.05~5g/L,更优选为0.1~2g/L。
在本发明中,虽然对铜-镍合金电镀浴的pH没有特别限制,但是通常在1~13的范围内,优选在3~8的范围内。可以通过使用pH调节剂(如硫酸、盐酸、氢溴酸、甲磺酸、氢氧化钠、氢氧化钾、氨水、乙二胺、二亚乙基三胺、三亚乙基四胺等)来调节电镀浴的pH。当进行电镀时,优选通过使用上述pH调节剂将电镀浴的pH保持在恒定水平。
接着,对使用本发明的电镀浴的电镀方法进行说明。可以使用本发明的电镀浴进行电镀的被镀物包括铜、铁、镍、银、金及它们的合金等。此外,基体表面用上述金属或合金修饰的基体可以用作被镀物。这种基体包括玻璃基体、陶瓷基体、塑料基体等。
当进行电镀时,可以使用碳、铂、镀铂的钛、涂氧化铟的钛等不溶性阳极作为阳极。或者,可以使用铜、镍、铜-镍合金或者并用铜和镍的可溶性阳极等。
此外,在使用本发明的铜-镍合金电镀浴的电镀方法中,优选使用其中待电镀的基板(阴极)和阳极电极通过隔离膜分离的电镀槽。隔离膜优选为中性隔离膜或离子交换膜。中性隔离膜包括具有聚对苯二甲酸乙二醇酯树脂基材和聚偏二氟乙烯树脂氧化钛/蔗糖脂肪酸酯的膜材料的中性隔离膜。另外,阳离子交换膜作为离子交换膜是合适的。
尽管本发明的铜-镍合金电镀浴能够获得析出的金属层的铜/镍组成比为5/95~99/1的任意组成的电镀层,但铜/镍组成比优选为20/80~98/2,更优选为50/50~95/5。
当进行电镀时,被镀物在通过常规方法进行预处理之后进行电镀步骤。在预处理步骤中,至少进行浸泡脱脂、阴极或阳极的电解清洗、酸洗和活化中的一种操作。在每个操作之间进行水清洗。电镀后,可以用水或热水清洗得到的涂层,然后干燥。此外,在铜-镍合金电镀之后,可以进行抗氧化处理,或者锡或锡合金电镀等。在本发明中,通过用合适的补充剂将浴成分保持在恒定水平,该镀浴能够长时间使用而无需更新液体。
当通过使用本发明的铜-镍合金电镀浴进行电镀时,可以使用直流或脉冲电流作为在铜-镍合金电镀浴中的待电镀基板和阳极电极上的电镀电流。
阴极电流密度通常为0.01~10A/dm2,优选为0.1~8.0A/dm2。
电镀时间取决于所需电镀的膜厚度和电流条件,但通常在1~1200分钟的范围内,优选在15~800分钟的范围内。
浴温通常为15~70℃,优选为20~60℃。可以通过空气、液体流阴极摇杆、桨等的机械液体搅拌来搅拌镀浴。膜厚度可以设定在宽的范围内,但通常为0.5~100μm,优选为3~50μm。
接下来,将通过实施例描述本发明,但是本发明不限于这些实施例。只要不违背上述目的,即能够在宽的电流密度范围内以任意的合金比例在被镀物上获得铜和镍组成均匀的镀层,并且能够得到浴稳定性优异,并且能够长时间连续使用的铜镍合金电镀,则电镀浴的组成、电镀条件可以任意地进行变更。
实施例
实施例中的电镀通过使用试验片来评价,所述试验片通过用Teflon(注册商标)胶带密封0.5×65×100mm的铁板(SPCC)的一个表面而制成。使用50g/L的脱脂-39(由迪普索股份有限公司制造)使作为试验片的铁板的脱脂,并用10.5重量%的盐酸进行酸洗,随后用5重量%的NC-20(迪普索股份有限公司制造)和70g/L氢氧化钠的溶液进行电解清洗。电解清洗后,用3.5%盐酸活化。在每个操作之间用水进行充分清洗。此外,对试验片进行氰化物镀浴铜触击电镀,以获得0.3μm的析出。
另外,电镀液的氧化还原电位(ORP)的测量方法是,通过在电镀操作时的浴温度下(通常为15℃~70℃)使用便携式ORP仪(由堀场制作所制造;便携式ORP仪D-72,参比电极Ag/AgCl),通过将ORP仪的电极浸渍在电镀液中并读取数值(mV)来测定。
(实施例1~9和比较例1~6)
接着,将表1所示出的电镀液注入丙烯酸树脂制的电镀槽中,将铜板作为阳极,将上述试验片与阴极连接,在表-2所示的条件下进行电镀。所得镀层的膜厚度和合金组成、镀层表面状态和镀层外观评价(包括色调、平滑性和光泽度)的结果示于表3和表4中。
注意,铜触击电镀的膜厚度比铜-镍合金电镀的膜厚度小得多,并且对铜-镍合金电镀的膜厚度和合金组成的影响是为微不足道的水平。
此外,镀层的膜厚度、合金组成、电镀表面状态和镀层外观评价通过如下方式进行:
(1)使用X射线荧光光谱仪测定镀层的膜厚度。
(2)对于镀层的合金组成,通过使用能量色散X射线光谱分析仪测定镀层断面的合金组成,并对镀层的均匀性进行评价。
(3)使用扫描电子显微镜观察和评价电镀表面状态(平滑度)。
(4)目视观察镀层的外观(色调)。
对于比较例,也以与实施例相同的方式,在表6示出的条件下使用表5示出的组成的电镀液进行电镀。将得到的镀层的膜厚度、合金组成、镀层表面状态、以及镀层外观的评价结果示出于表7中。
[表2]
表-2实施例1~9的电镀条件
[表5]
表-5对比例1~6的电镀液组成
铜盐的种类:氨基磺酸铜(II)(比较例1和4),硫酸铜(II)(比较例3和6),甲磺酸铜(II)(比较例2和5)
镍盐的种类:氨基磺酸镍(比较例1和4),硫酸镍(比较例3和6),甲磺酸镍(比较例2和5)
pH调节剂:氢氧化钠(比较例1、2、4和5),氢氧化钾(比较例3和6)
[表6]
表-6比较例1~9的电镀条件
Claims (7)
1.一种铜-镍合金电镀浴,其含有:
(a)铜盐和镍盐;
(b)金属络合剂;
(c)导电性赋予盐;
(d)含硫有机化合物;和
(e)氧化还原电位调节剂。
2.根据权利要求1所述的铜-镍合金电镀浴,其中,(e)所述氧化还原电位调节剂选自由氧化剂、pH缓冲剂及它们的组合组成的组。
3.根据权利要求2所述的铜-镍合金电镀浴,其中,所述氧化剂选自由过氧化氢溶液、水溶性含氧酸及它们的盐组成的组。
4.根据权利要求1~3中任一项所述的铜-镍合金电镀浴,其中,在电镀操作时(通电时)的电镀浴的氧化还原电位(ORP)在20mV(参比电极Ag/AgCl)以上。
5.根据权利要求4所述的铜-镍合金电镀浴,其中,20mV(参比电极Ag/AgCl)以上的氧化还原电位通过氧化还原电位调节剂来调节获得。
6.根据权利要求1~5中任一项所述的铜-镍合金电镀浴,其中,铜-镍合金电镀涂层的铜/镍组成比为5/95~95/5。
7.根据权利要求1~6中任一项所述的铜-镍合金电镀浴,其中,所述铜-镍合金电镀浴用于对选自由铜、铁、镍、银、金及它们的合金组成的组中的金属基体、或基体表面由上述金属或合金修饰的基体进行电镀。
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WO2018110198A1 (ja) * | 2016-12-16 | 2018-06-21 | コニカミノルタ株式会社 | 透明導電膜の形成方法及び電解メッキ用メッキ液 |
US11800648B2 (en) | 2018-02-22 | 2023-10-24 | Konica Minolta, Inc. | Pattern forming method |
RU2694398C1 (ru) * | 2018-12-14 | 2019-07-12 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Елецкий государственный университет им. И.А. Бунина" | Электролит для получения сплавов железо-никель |
CN116034188A (zh) * | 2020-06-22 | 2023-04-28 | 离网能源实验室私人有限公司 | 新型共晶溶剂 |
TWI804149B (zh) | 2022-01-10 | 2023-06-01 | 國立陽明交通大學 | 雙晶銅-鎳合金金屬層及其製備方法 |
KR102587490B1 (ko) * | 2022-12-05 | 2023-10-11 | 동국제강 주식회사 | 내식성이 우수한 클래드 후강판용 슬래브의 도금 방법 및 이 도금 방법으로 제조된 내식성이 우수한 클래드 후강판용 슬래브 |
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