CN106553119B - 抛光半导体衬底的方法 - Google Patents

抛光半导体衬底的方法 Download PDF

Info

Publication number
CN106553119B
CN106553119B CN201610087216.5A CN201610087216A CN106553119B CN 106553119 B CN106553119 B CN 106553119B CN 201610087216 A CN201610087216 A CN 201610087216A CN 106553119 B CN106553119 B CN 106553119B
Authority
CN
China
Prior art keywords
mechanical polishing
chemical mechanical
substrate
chemical
rpm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610087216.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN106553119A (zh
Inventor
Y·郭
D·莫斯利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ROHM AND HAAS ELECTRONIC MATER filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN106553119A publication Critical patent/CN106553119A/zh
Application granted granted Critical
Publication of CN106553119B publication Critical patent/CN106553119B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
CN201610087216.5A 2015-09-24 2016-02-16 抛光半导体衬底的方法 Active CN106553119B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/863,548 US9293339B1 (en) 2015-09-24 2015-09-24 Method of polishing semiconductor substrate
US14/863548 2015-09-24

Publications (2)

Publication Number Publication Date
CN106553119A CN106553119A (zh) 2017-04-05
CN106553119B true CN106553119B (zh) 2019-05-28

Family

ID=55487475

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610087216.5A Active CN106553119B (zh) 2015-09-24 2016-02-16 抛光半导体衬底的方法

Country Status (7)

Country Link
US (1) US9293339B1 (enExample)
JP (1) JP6685744B2 (enExample)
KR (1) KR102410159B1 (enExample)
CN (1) CN106553119B (enExample)
DE (1) DE102016001732A1 (enExample)
FR (1) FR3041813B1 (enExample)
TW (1) TWI677544B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10221336B2 (en) * 2017-06-16 2019-03-05 rohm and Hass Electronic Materials CMP Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
TWI861353B (zh) * 2020-01-31 2024-11-11 美商恩特葛瑞斯股份有限公司 用於研磨硬質材料之化學機械研磨(cmp)組合物
US11384254B2 (en) * 2020-04-15 2022-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition containing composite silica particles, method of making the silica composite particles and method of polishing a substrate

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1242729A (zh) * 1996-11-26 2000-01-26 卡伯特公司 用于金属cmp的组合物和浆料
US6103627A (en) * 1996-02-21 2000-08-15 Micron Technology, Inc. Treatment of a surface having an exposed silicon/silica interface
CN1629238A (zh) * 2003-11-13 2005-06-22 Cmp罗姆和哈斯电子材料控股公司 用于抛光铜的组合物和方法
CN101302405A (zh) * 2007-05-08 2008-11-12 罗门哈斯电子材料Cmp控股股份有限公司 碱性阻挡层抛光浆液
CN101568615A (zh) * 2006-12-28 2009-10-28 花王株式会社 研磨液组合物
CN101736344A (zh) * 2008-11-05 2010-06-16 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光组合物及其相关方法
CN102363713A (zh) * 2010-06-15 2012-02-29 罗门哈斯电子材料Cmp控股股份有限公司 稳定的化学机械抛光组合物以及抛光基板的方法
CN102559062A (zh) * 2010-09-20 2012-07-11 罗门哈斯电子材料Cmp控股股份有限公司 稳定的、可浓缩的化学机械抛光组合物和抛光基材的方法
CN104416450A (zh) * 2013-08-26 2015-03-18 罗门哈斯电子材料Cmp控股股份有限公司 用于抛光蓝宝石表面的化学机械抛光组合物及其使用方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3007878A (en) 1956-11-01 1961-11-07 Du Pont Aquasols of positively-charged coated silica particles and their production
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5382272A (en) 1993-09-03 1995-01-17 Rodel, Inc. Activated polishing compositions
US6270395B1 (en) * 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials
DE10164262A1 (de) 2001-12-27 2003-07-17 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen
US7771669B2 (en) * 2006-03-20 2010-08-10 Ford Global Technologies, Llc Soot oxidation catalyst and method of making
US7300340B1 (en) * 2006-08-30 2007-11-27 Rohm and Haas Electronics Materials CMP Holdings, Inc. CMP pad having overlaid constant area spiral grooves
JP5441896B2 (ja) 2007-06-08 2014-03-12 テクノ セミケム シーオー．， エルティーディー． 銅ダマシン工程用化学機械的研磨スラリー組成物
SG10201605686XA (en) * 2008-02-01 2016-08-30 Fujimi Inc Polishing Composition And Polishing Method Using The Same
JP5334891B2 (ja) * 2009-03-13 2013-11-06 富士フイルム株式会社 シリカ分散液の製造方法、インク受容層形成用組成物の製造方法、インクジェット記録媒体の製造方法、及び画像形成方法
JP2010258418A (ja) * 2009-04-02 2010-11-11 Jsr Corp 化学機械研磨用水系分散体調製用キットおよび化学機械研磨用水系分散体の調製方法
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
JP2013104023A (ja) * 2011-11-15 2013-05-30 Tosoh Corp ジルコニア研磨剤及びその製造方法
JP6378890B2 (ja) * 2013-03-01 2018-08-22 株式会社荏原製作所 基板処理方法
US9012327B2 (en) * 2013-09-18 2015-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low defect chemical mechanical polishing composition

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6103627A (en) * 1996-02-21 2000-08-15 Micron Technology, Inc. Treatment of a surface having an exposed silicon/silica interface
CN1242729A (zh) * 1996-11-26 2000-01-26 卡伯特公司 用于金属cmp的组合物和浆料
CN1629238A (zh) * 2003-11-13 2005-06-22 Cmp罗姆和哈斯电子材料控股公司 用于抛光铜的组合物和方法
CN101568615A (zh) * 2006-12-28 2009-10-28 花王株式会社 研磨液组合物
CN101302405A (zh) * 2007-05-08 2008-11-12 罗门哈斯电子材料Cmp控股股份有限公司 碱性阻挡层抛光浆液
CN101736344A (zh) * 2008-11-05 2010-06-16 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光组合物及其相关方法
CN102363713A (zh) * 2010-06-15 2012-02-29 罗门哈斯电子材料Cmp控股股份有限公司 稳定的化学机械抛光组合物以及抛光基板的方法
CN102559062A (zh) * 2010-09-20 2012-07-11 罗门哈斯电子材料Cmp控股股份有限公司 稳定的、可浓缩的化学机械抛光组合物和抛光基材的方法
CN104416450A (zh) * 2013-08-26 2015-03-18 罗门哈斯电子材料Cmp控股股份有限公司 用于抛光蓝宝石表面的化学机械抛光组合物及其使用方法

Also Published As

Publication number Publication date
US9293339B1 (en) 2016-03-22
KR20170036589A (ko) 2017-04-03
FR3041813A1 (fr) 2017-03-31
FR3041813B1 (fr) 2019-10-18
TW201712083A (zh) 2017-04-01
JP2017063173A (ja) 2017-03-30
CN106553119A (zh) 2017-04-05
JP6685744B2 (ja) 2020-04-22
TWI677544B (zh) 2019-11-21
DE102016001732A1 (de) 2017-03-30
KR102410159B1 (ko) 2022-06-16

Similar Documents

Publication Publication Date Title
US5891205A (en) Chemical mechanical polishing composition
JP6542761B2 (ja) 混合研磨材の研磨組成物
KR101134827B1 (ko) 화학 기계적 연마를 위한 연마재 입자
TWI398473B (zh) 用於拋光在鑲嵌結構中之鋁／銅及鈦之組合物
JP4012180B2 (ja) Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
KR102278256B1 (ko) 연마액, 연마액 세트 및 연마 방법
JP2011151405A (ja) 半導体素子の表面平坦化方法
JP6327326B2 (ja) 金属用研磨液及び研磨方法
CN107429120A (zh) 包含阳离子型聚合物添加剂的抛光组合物
JP2005011932A (ja) Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
TWI500749B (zh) 使用適用於增加氧化矽移除之研磨組成物化學機械研磨基板之方法
WO2010012159A1 (zh) 一种化学机械抛光液
CN111718657A (zh) 化学机械抛光组合物及抑制无定形硅的去除速率的方法
KR102600276B1 (ko) 화학적 기계적 연마 방법
CN106553119B (zh) 抛光半导体衬底的方法
KR101273705B1 (ko) Ｃｍｐ 연마액 및 이 ｃｍｐ 연마액을 사용한 기판의 연마 방법
TWI662096B (zh) 具有改善之凹陷及圖案選擇性之對氧化物及氮化物有選擇性之cmp組成物
WO2008103549A2 (en) Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide
Armini et al. Engineering polymer core–silica shell size in the composite abrasives for CMP applications
CN115881528A (zh) 提高多晶硅的移除速率的方法
WO2021084706A1 (ja) 研磨液、研磨方法及び半導体部品の製造方法
WO2018179062A1 (ja) 研磨液、研磨液セット、添加液及び研磨方法
US9534148B1 (en) Method of polishing semiconductor substrate
JP2001055560A (ja) 研磨剤及びそれを用いた基板の研磨方法
TW201714211A (zh) 化學機械硏磨半導體基板之方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: Delaware, USA

Patentee after: DuPont Electronic Materials Holdings Co.,Ltd.

Country or region after: U.S.A.

Address before: Delaware, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc.

Country or region before: U.S.A.