FR3041813B1 - Procede de polissage d'un substrat semi-conducteur - Google Patents

Procede de polissage d'un substrat semi-conducteur Download PDF

Info

Publication number
FR3041813B1
FR3041813B1 FR1651389A FR1651389A FR3041813B1 FR 3041813 B1 FR3041813 B1 FR 3041813B1 FR 1651389 A FR1651389 A FR 1651389A FR 1651389 A FR1651389 A FR 1651389A FR 3041813 B1 FR3041813 B1 FR 3041813B1
Authority
FR
France
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
substrate
zirconyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1651389A
Other languages
English (en)
French (fr)
Other versions
FR3041813A1 (fr
Inventor
Yi Guo
David Mosley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR3041813A1 publication Critical patent/FR3041813A1/fr
Application granted granted Critical
Publication of FR3041813B1 publication Critical patent/FR3041813B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
FR1651389A 2015-09-24 2016-02-19 Procede de polissage d'un substrat semi-conducteur Expired - Fee Related FR3041813B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14863548 2015-09-24
US14/863,548 US9293339B1 (en) 2015-09-24 2015-09-24 Method of polishing semiconductor substrate

Publications (2)

Publication Number Publication Date
FR3041813A1 FR3041813A1 (fr) 2017-03-31
FR3041813B1 true FR3041813B1 (fr) 2019-10-18

Family

ID=55487475

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1651389A Expired - Fee Related FR3041813B1 (fr) 2015-09-24 2016-02-19 Procede de polissage d'un substrat semi-conducteur

Country Status (7)

Country Link
US (1) US9293339B1 (enExample)
JP (1) JP6685744B2 (enExample)
KR (1) KR102410159B1 (enExample)
CN (1) CN106553119B (enExample)
DE (1) DE102016001732A1 (enExample)
FR (1) FR3041813B1 (enExample)
TW (1) TWI677544B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10221336B2 (en) * 2017-06-16 2019-03-05 rohm and Hass Electronic Materials CMP Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
TWI861353B (zh) * 2020-01-31 2024-11-11 美商恩特葛瑞斯股份有限公司 用於研磨硬質材料之化學機械研磨(cmp)組合物
US11384254B2 (en) * 2020-04-15 2022-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition containing composite silica particles, method of making the silica composite particles and method of polishing a substrate

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3007878A (en) 1956-11-01 1961-11-07 Du Pont Aquasols of positively-charged coated silica particles and their production
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5382272A (en) 1993-09-03 1995-01-17 Rodel, Inc. Activated polishing compositions
US6103627A (en) * 1996-02-21 2000-08-15 Micron Technology, Inc. Treatment of a surface having an exposed silicon/silica interface
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6270395B1 (en) * 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials
DE10164262A1 (de) 2001-12-27 2003-07-17 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper
US7771669B2 (en) * 2006-03-20 2010-08-10 Ford Global Technologies, Llc Soot oxidation catalyst and method of making
US7300340B1 (en) * 2006-08-30 2007-11-27 Rohm and Haas Electronics Materials CMP Holdings, Inc. CMP pad having overlaid constant area spiral grooves
CN101568615B (zh) * 2006-12-28 2013-02-06 花王株式会社 研磨液组合物
US20080276543A1 (en) * 2007-05-08 2008-11-13 Thomas Terence M Alkaline barrier polishing slurry
JP5441896B2 (ja) * 2007-06-08 2014-03-12 テクノ セミケム シーオー．， エルティーディー． 銅ダマシン工程用化学機械的研磨スラリー組成物
CN103131330B (zh) * 2008-02-01 2015-09-23 福吉米株式会社 研磨用组合物以及使用其的研磨方法
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
JP2010234806A (ja) * 2009-03-13 2010-10-21 Fujifilm Corp インクジェット記録媒体の製造方法
JP2010258418A (ja) * 2009-04-02 2010-11-11 Jsr Corp 化学機械研磨用水系分散体調製用キットおよび化学機械研磨用水系分散体の調製方法
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
JP2013104023A (ja) * 2011-11-15 2013-05-30 Tosoh Corp ジルコニア研磨剤及びその製造方法
JP6378890B2 (ja) * 2013-03-01 2018-08-22 株式会社荏原製作所 基板処理方法
US9633831B2 (en) * 2013-08-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same
US9012327B2 (en) * 2013-09-18 2015-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low defect chemical mechanical polishing composition

Also Published As

Publication number Publication date
JP6685744B2 (ja) 2020-04-22
FR3041813A1 (fr) 2017-03-31
CN106553119B (zh) 2019-05-28
KR102410159B1 (ko) 2022-06-16
CN106553119A (zh) 2017-04-05
KR20170036589A (ko) 2017-04-03
TW201712083A (zh) 2017-04-01
US9293339B1 (en) 2016-03-22
JP2017063173A (ja) 2017-03-30
DE102016001732A1 (de) 2017-03-30
TWI677544B (zh) 2019-11-21

Similar Documents

Publication Publication Date Title
TWI565793B (zh) 硏磨劑、硏磨劑套組及基體的硏磨方法
KR20190096892A (ko) 복합 입자, 이를 정제하는 방법 및 이의 용도
US20110223840A1 (en) Polishing Composition and Polishing Method Using The Same
FR3070021A1 (fr) Procede de polissage mecano-chimique pour tungstene
US20150344739A1 (en) Aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method
WO2017114309A1 (zh) 一种化学机械抛光液及其应用
FR3041813B1 (fr) Procede de polissage d'un substrat semi-conducteur
FR3010650A1 (fr) Composition de polissage chimico-mecanique a faible densite de defauts
FR2958200A1 (fr) Procede de polissage chimico-mecanique d'un substrat avec une composition de polissage adaptee pour accroitre l'elimination de l'oxyde de silicium
EP0838845B1 (fr) Nouveau procédé de polissage mécano-chimique de couches de matériaux isolants à base de dérivés du silicium ou de silicium
WO2011093195A1 (ja) 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法、ならびに化学機械研磨用水系分散体調製用キット
FR2835844A1 (fr) Procede de polissage mecano-chimique de substrats metalliques
JP7356932B2 (ja) 研磨用組成物及び研磨方法
US12091581B2 (en) High oxide film removal rate shallow trench (STI) chemical mechanical planarization (CMP) polishing
CN110283532A (zh) 具有增强缺陷抑制的抛光组合物和抛光衬底方法
KR20240158344A (ko) 고효율의 산화규소 제거를 위한 안정한 화학적 기계적 평탄화 연마 조성물 및 방법
JPWO2018179062A1 (ja) 研磨液、研磨液セット、添加液及び研磨方法
TWI763076B (zh) 氧化物槽溝低淺盤效應的淺溝隔離化學機械平坦化研磨組合物、系統及方法
WO2018012175A1 (ja) 研磨用組成物の製造方法および研磨方法
WO2016132951A1 (ja) 研磨用組成物
JP2022169477A (ja) 研磨組成物及び向上した欠陥防止を有する基材を研磨する方法
JP2023506487A (ja) 低酸化物トレンチディッシングシャロートレンチアイソレーション化学的機械平坦化研磨

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLFP Fee payment

Year of fee payment: 3

PLSC Publication of the preliminary search report

Effective date: 20180330

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

ST Notification of lapse

Effective date: 20241005