CN106465535B - 传输线过孔结构 - Google Patents

传输线过孔结构 Download PDF

Info

Publication number
CN106465535B
CN106465535B CN201580025911.2A CN201580025911A CN106465535B CN 106465535 B CN106465535 B CN 106465535B CN 201580025911 A CN201580025911 A CN 201580025911A CN 106465535 B CN106465535 B CN 106465535B
Authority
CN
China
Prior art keywords
substructures
transmission line
central conductor
conductor portion
dielectric support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580025911.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN106465535A (zh
Inventor
D·M·马奥尼
M·H·马尔迪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xilinx Inc
Original Assignee
Xilinx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xilinx Inc filed Critical Xilinx Inc
Publication of CN106465535A publication Critical patent/CN106465535A/zh
Application granted granted Critical
Publication of CN106465535B publication Critical patent/CN106465535B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H05K1/0219—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
    • H05K1/0222—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors for shielding around a single via or around a group of vias, e.g. coaxial vias or vias surrounded by a grounded via fence
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H05K1/025—Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance
    • H05K1/0251—Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance related to vias or transitions between vias and transmission lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6616—Vertical connections, e.g. vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6616—Vertical connections, e.g. vias
    • H01L2223/6622—Coaxial feed-throughs in active or passive substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H05K1/116—Lands, clearance holes or other lay-out details concerning the surrounding of a via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09809—Coaxial layout
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
    • H05K2203/308—Sacrificial means, e.g. for temporarily filling a space for making a via or a cavity or for making rigid-flexible PCBs
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4046—Through-connections; Vertical interconnect access [VIA] connections using auxiliary conductive elements, e.g. metallic spheres, eyelets, pieces of wire
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H05K3/424—Plated through-holes or plated via connections characterised by electroplating method by direct electroplating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Structure Of Printed Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201580025911.2A 2014-05-16 2015-01-13 传输线过孔结构 Active CN106465535B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/280,223 2014-05-16
US14/280,223 US9123738B1 (en) 2014-05-16 2014-05-16 Transmission line via structure
PCT/US2015/011216 WO2015175023A1 (en) 2014-05-16 2015-01-13 Transmission line via structure

Publications (2)

Publication Number Publication Date
CN106465535A CN106465535A (zh) 2017-02-22
CN106465535B true CN106465535B (zh) 2018-01-02

Family

ID=52472578

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580025911.2A Active CN106465535B (zh) 2014-05-16 2015-01-13 传输线过孔结构

Country Status (6)

Country Link
US (1) US9123738B1 (OSRAM)
EP (1) EP3143846B1 (OSRAM)
JP (1) JP6367479B2 (OSRAM)
KR (1) KR102105432B1 (OSRAM)
CN (1) CN106465535B (OSRAM)
WO (1) WO2015175023A1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8912574B2 (en) * 2010-12-14 2014-12-16 International Business Machines Corporation Device isolation with improved thermal conductivity
US20170194245A1 (en) * 2016-01-04 2017-07-06 Globalfoundries Inc. On-chip variable capacitor with geometric cross-section
KR101824644B1 (ko) * 2017-05-08 2018-02-01 주식회사 기가레인 선폭 축소형 연성회로기판 및 그 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050146390A1 (en) * 2004-01-07 2005-07-07 Jae-Myung Baek Multi-layer substrate having impedance-matching hole
CN101133478A (zh) * 2005-03-04 2008-02-27 三米拉-惜爱公司 利用电镀保护层同时并选择性分割通孔结构
US20090201654A1 (en) * 2008-02-08 2009-08-13 Lambert Simonovich Method and system for improving electrical performance of vias for high data rate transmission
US20130105212A1 (en) * 2011-11-02 2013-05-02 Japan Electronic Materials Corp. Multilayer insulating substrate and method for manufacturing the same
CN103260339A (zh) * 2012-02-21 2013-08-21 富士通株式会社 多层布线板和电子装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128737A (en) 1990-03-02 1992-07-07 Silicon Dynamics, Inc. Semiconductor integrated circuit fabrication yield improvements
WO1996039012A1 (en) 1995-06-01 1996-12-05 The Whitaker Corporation Electrical connection
US6072690A (en) 1998-01-15 2000-06-06 International Business Machines Corporation High k dielectric capacitor with low k sheathed signal vias
JP3011197B1 (ja) * 1998-08-13 2000-02-21 日本電気株式会社 プリント配線板のコネクタ構造
JP2001077498A (ja) * 1999-09-03 2001-03-23 Nec Eng Ltd セラミック基板及びその製造方法
JP4390368B2 (ja) * 2000-06-08 2009-12-24 新光電気工業株式会社 配線基板の製造方法
DE602004028349D1 (de) 2003-03-04 2010-09-09 Rohm & Haas Elect Mat Koaxiale wellenleitermikrostrukturen und verfahern zu ihrer bildung
US6937120B2 (en) * 2003-04-02 2005-08-30 Harris Corporation Conductor-within-a-via microwave launch
US7276787B2 (en) * 2003-12-05 2007-10-02 International Business Machines Corporation Silicon chip carrier with conductive through-vias and method for fabricating same
JP4179186B2 (ja) 2004-02-25 2008-11-12 ソニー株式会社 配線基板およびその製造方法および半導体装置
US7005371B2 (en) 2004-04-29 2006-02-28 International Business Machines Corporation Method of forming suspended transmission line structures in back end of line processing
JP2006019455A (ja) * 2004-06-30 2006-01-19 Nec Electronics Corp 半導体装置およびその製造方法
US7215032B2 (en) 2005-06-14 2007-05-08 Cubic Wafer, Inc. Triaxial through-chip connection
US7534722B2 (en) * 2005-06-14 2009-05-19 John Trezza Back-to-front via process
JP2007012746A (ja) * 2005-06-29 2007-01-18 Shinko Electric Ind Co Ltd 配線基板とその製造方法及び半導体装置
US7633167B2 (en) 2005-09-29 2009-12-15 Nec Electronics Corporation Semiconductor device and method for manufacturing same
US7405477B1 (en) 2005-12-01 2008-07-29 Altera Corporation Ball grid array package-to-board interconnect co-design apparatus
US20070126085A1 (en) 2005-12-02 2007-06-07 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
US7589390B2 (en) 2006-03-10 2009-09-15 Teledyne Technologies, Incorporated Shielded through-via
US7989915B2 (en) 2006-07-11 2011-08-02 Teledyne Licensing, Llc Vertical electrical device
KR101472134B1 (ko) 2007-03-20 2014-12-15 누보트로닉스, 엘.엘.씨 동축 전송선 마이크로구조물 및 그의 형성방법
JP5346510B2 (ja) 2007-08-24 2013-11-20 本田技研工業株式会社 貫通配線構造
JP2009124087A (ja) 2007-11-19 2009-06-04 Oki Semiconductor Co Ltd 半導体装置の製造方法
US8035198B2 (en) 2008-08-08 2011-10-11 International Business Machines Corporation Through wafer via and method of making same
US8198547B2 (en) 2009-07-23 2012-06-12 Lexmark International, Inc. Z-directed pass-through components for printed circuit boards
US8618629B2 (en) 2009-10-08 2013-12-31 Qualcomm Incorporated Apparatus and method for through silicon via impedance matching
US8242604B2 (en) * 2009-10-28 2012-08-14 International Business Machines Corporation Coaxial through-silicon via
US20110291287A1 (en) 2010-05-25 2011-12-01 Xilinx, Inc. Through-silicon vias with low parasitic capacitance
US8519542B2 (en) 2010-08-03 2013-08-27 Xilinx, Inc. Air through-silicon via structure
US8216936B1 (en) 2010-10-21 2012-07-10 Xilinx, Inc. Low capacitance electrical connection via
US8384225B2 (en) 2010-11-12 2013-02-26 Xilinx, Inc. Through silicon via with improved reliability
US8692381B1 (en) 2011-01-06 2014-04-08 Xilinx, Inc. Integrated circuits with a resistance to single event upset occurrence and methods for providing the same
TW201327756A (zh) * 2011-12-26 2013-07-01 財團法人工業技術研究院 穿基板介層物結構及其製造方法
US9039448B2 (en) * 2013-02-18 2015-05-26 Tyco Electronics Corporation Electronic interconnect devices having conductive vias
US8877559B2 (en) * 2013-03-15 2014-11-04 Globalfoundries Inc. Through-silicon via with sidewall air gap

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050146390A1 (en) * 2004-01-07 2005-07-07 Jae-Myung Baek Multi-layer substrate having impedance-matching hole
CN101133478A (zh) * 2005-03-04 2008-02-27 三米拉-惜爱公司 利用电镀保护层同时并选择性分割通孔结构
US20090201654A1 (en) * 2008-02-08 2009-08-13 Lambert Simonovich Method and system for improving electrical performance of vias for high data rate transmission
US20130105212A1 (en) * 2011-11-02 2013-05-02 Japan Electronic Materials Corp. Multilayer insulating substrate and method for manufacturing the same
CN103260339A (zh) * 2012-02-21 2013-08-21 富士通株式会社 多层布线板和电子装置

Also Published As

Publication number Publication date
EP3143846A1 (en) 2017-03-22
US9123738B1 (en) 2015-09-01
KR102105432B1 (ko) 2020-04-29
EP3143846B1 (en) 2018-03-14
WO2015175023A1 (en) 2015-11-19
JP6367479B2 (ja) 2018-08-01
CN106465535A (zh) 2017-02-22
KR20170008819A (ko) 2017-01-24
JP2017520935A (ja) 2017-07-27

Similar Documents

Publication Publication Date Title
US10312609B2 (en) Low profile electrical connector
US9693445B2 (en) Printed circuit board with thermal via
CN102403278B (zh) 连接器组件及制造方法
US20070020914A1 (en) Circuit substrate and method of manufacturing the same
CN101142860B (zh) 印刷线路板
KR102222608B1 (ko) 인쇄회로기판 및 그 제조방법
JP2021513746A (ja) スナップ無線周波数コネクタ相互接続体
JP6802146B2 (ja) 同軸配線を備える集積デバイス
US9814145B2 (en) Methods for manufacturing a Z-directed printed circuit board component having a removable end portion
US9801283B2 (en) Method of producing electronic components
US20160183357A1 (en) Printed circuit board and method for manufacturing same
TW201630496A (zh) 具有散熱結構的電路板及其製作方法
CN106465535B (zh) 传输线过孔结构
CN207603990U (zh) 柔性电路板
CN103338590B (zh) 软性电路板及其制造方法
CN103889145A (zh) 线路板及电子总成
SE520174C2 (sv) Förfarande och anordning för anordnande av vior i mönsterkort
US10588215B2 (en) Inter-board connection structure
US20160324001A1 (en) Printed circuit board and method for manufacturing the printed circuit board
US7573359B2 (en) Reducing crosstalk in electronic devices having microstrip lines covered by a flexible insulating material and a metallic backing plate
JP2021508421A (ja) 螺旋アンテナ及び関連する製造技術
CN102917537B (zh) 具有多直径通孔的基底
CN104126333A (zh) 包括印制电路板、单独电路板和电源连接器的电气和/或电子电路
US9009954B2 (en) Process for manufacturing a Z-directed component for a printed circuit board using a sacrificial constraining material
US20080212287A1 (en) Semiconductor package structure with buried electronic device and manufacturing method therof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant