CN1062995A - 一种半导体器件静电放电特性的改进方法 - Google Patents

一种半导体器件静电放电特性的改进方法 Download PDF

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Publication number
CN1062995A
CN1062995A CN91103565A CN91103565A CN1062995A CN 1062995 A CN1062995 A CN 1062995A CN 91103565 A CN91103565 A CN 91103565A CN 91103565 A CN91103565 A CN 91103565A CN 1062995 A CN1062995 A CN 1062995A
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CN
China
Prior art keywords
region
epitaxial layer
type epitaxial
layer
improving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN91103565A
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English (en)
Chinese (zh)
Inventor
柳荣益
朴侍弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1062995A publication Critical patent/CN1062995A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN91103565A 1990-12-27 1991-05-29 一种半导体器件静电放电特性的改进方法 Pending CN1062995A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR22028 1990-12-27
KR1019900022028A KR920013754A (ko) 1990-12-27 1990-12-27 반도체 장치의 정전기 특성 개선 방법

Publications (1)

Publication Number Publication Date
CN1062995A true CN1062995A (zh) 1992-07-22

Family

ID=19308645

Family Applications (1)

Application Number Title Priority Date Filing Date
CN91103565A Pending CN1062995A (zh) 1990-12-27 1991-05-29 一种半导体器件静电放电特性的改进方法

Country Status (4)

Country Link
JP (1) JPH05343411A (enrdf_load_stackoverflow)
KR (1) KR920013754A (enrdf_load_stackoverflow)
CN (1) CN1062995A (enrdf_load_stackoverflow)
TW (1) TW197529B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449636A (zh) * 2016-10-12 2017-02-22 矽力杰半导体技术(杭州)有限公司 Esd保护器件及其制造方法
MA61712A1 (fr) * 2021-09-30 2024-09-30 Guangdong Brunp Recycling Technology Co., Ltd. Procédé de récupération de micropoudre de matériau ternaire et son application

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743460A (en) * 1980-08-29 1982-03-11 Fujitsu Ltd Semiconductor device
JPS63248165A (ja) * 1987-04-03 1988-10-14 New Japan Radio Co Ltd Ｐｎｐトランジスタ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449636A (zh) * 2016-10-12 2017-02-22 矽力杰半导体技术(杭州)有限公司 Esd保护器件及其制造方法
CN106449636B (zh) * 2016-10-12 2019-12-10 矽力杰半导体技术(杭州)有限公司 Esd保护器件及其制造方法
MA61712A1 (fr) * 2021-09-30 2024-09-30 Guangdong Brunp Recycling Technology Co., Ltd. Procédé de récupération de micropoudre de matériau ternaire et son application

Also Published As

Publication number Publication date
TW197529B (enrdf_load_stackoverflow) 1993-01-01
KR920013754A (ko) 1992-07-29
JPH05343411A (ja) 1993-12-24

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Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C01 Deemed withdrawal of patent application (patent law 1993)
WD01 Invention patent application deemed withdrawn after publication