KR920013754A - 반도체 장치의 정전기 특성 개선 방법 - Google Patents

반도체 장치의 정전기 특성 개선 방법 Download PDF

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Publication number
KR920013754A
KR920013754A KR1019900022028A KR900022028A KR920013754A KR 920013754 A KR920013754 A KR 920013754A KR 1019900022028 A KR1019900022028 A KR 1019900022028A KR 900022028 A KR900022028 A KR 900022028A KR 920013754 A KR920013754 A KR 920013754A
Authority
KR
South Korea
Prior art keywords
region
type
layer
forming
breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019900022028A
Other languages
English (en)
Korean (ko)
Inventor
박시흥
유영익
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019900022028A priority Critical patent/KR920013754A/ko
Priority to TW080103566A priority patent/TW197529B/zh
Priority to CN91103565A priority patent/CN1062995A/zh
Priority to JP3190244A priority patent/JPH05343411A/ja
Publication of KR920013754A publication Critical patent/KR920013754A/ko
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019900022028A 1990-12-27 1990-12-27 반도체 장치의 정전기 특성 개선 방법 Abandoned KR920013754A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019900022028A KR920013754A (ko) 1990-12-27 1990-12-27 반도체 장치의 정전기 특성 개선 방법
TW080103566A TW197529B (enrdf_load_stackoverflow) 1990-12-27 1991-05-07
CN91103565A CN1062995A (zh) 1990-12-27 1991-05-29 一种半导体器件静电放电特性的改进方法
JP3190244A JPH05343411A (ja) 1990-12-27 1991-07-30 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900022028A KR920013754A (ko) 1990-12-27 1990-12-27 반도체 장치의 정전기 특성 개선 방법

Publications (1)

Publication Number Publication Date
KR920013754A true KR920013754A (ko) 1992-07-29

Family

ID=19308645

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900022028A Abandoned KR920013754A (ko) 1990-12-27 1990-12-27 반도체 장치의 정전기 특성 개선 방법

Country Status (4)

Country Link
JP (1) JPH05343411A (enrdf_load_stackoverflow)
KR (1) KR920013754A (enrdf_load_stackoverflow)
CN (1) CN1062995A (enrdf_load_stackoverflow)
TW (1) TW197529B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449636B (zh) * 2016-10-12 2019-12-10 矽力杰半导体技术(杭州)有限公司 Esd保护器件及其制造方法
CN113968593B (zh) * 2021-09-30 2022-11-15 广东邦普循环科技有限公司 三元材料微粉回收处理的方法及其应用

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743460A (en) * 1980-08-29 1982-03-11 Fujitsu Ltd Semiconductor device
JPS63248165A (ja) * 1987-04-03 1988-10-14 New Japan Radio Co Ltd Ｐｎｐトランジスタ

Also Published As

Publication number Publication date
TW197529B (enrdf_load_stackoverflow) 1993-01-01
CN1062995A (zh) 1992-07-22
JPH05343411A (ja) 1993-12-24

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Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19901227

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19901227

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19930831

Patent event code: PE09021S01D

PC1902 Submission of document of abandonment before decision of registration
SUBM Surrender of laid-open application requested