JPH05343411A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPH05343411A
JPH05343411A JP3190244A JP19024491A JPH05343411A JP H05343411 A JPH05343411 A JP H05343411A JP 3190244 A JP3190244 A JP 3190244A JP 19024491 A JP19024491 A JP 19024491A JP H05343411 A JPH05343411 A JP H05343411A
Authority
JP
Japan
Prior art keywords
region
semiconductor device
layer
type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3190244A
Other languages
English (en)
Japanese (ja)
Inventor
Yeong-Yi Liu
ヨン イク ユ
Shi-Houng Park
シ ホン パク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH05343411A publication Critical patent/JPH05343411A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP3190244A 1990-12-27 1991-07-30 半導体装置およびその製造方法 Pending JPH05343411A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019900022028A KR920013754A (ko) 1990-12-27 1990-12-27 반도체 장치의 정전기 특성 개선 방법
KR1990-22028 1990-12-27

Publications (1)

Publication Number Publication Date
JPH05343411A true JPH05343411A (ja) 1993-12-24

Family

ID=19308645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3190244A Pending JPH05343411A (ja) 1990-12-27 1991-07-30 半導体装置およびその製造方法

Country Status (4)

Country Link
JP (1) JPH05343411A (enrdf_load_stackoverflow)
KR (1) KR920013754A (enrdf_load_stackoverflow)
CN (1) CN1062995A (enrdf_load_stackoverflow)
TW (1) TW197529B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449636B (zh) * 2016-10-12 2019-12-10 矽力杰半导体技术(杭州)有限公司 Esd保护器件及其制造方法
CN113968593B (zh) * 2021-09-30 2022-11-15 广东邦普循环科技有限公司 三元材料微粉回收处理的方法及其应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743460A (en) * 1980-08-29 1982-03-11 Fujitsu Ltd Semiconductor device
JPS63248165A (ja) * 1987-04-03 1988-10-14 New Japan Radio Co Ltd Ｐｎｐトランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743460A (en) * 1980-08-29 1982-03-11 Fujitsu Ltd Semiconductor device
JPS63248165A (ja) * 1987-04-03 1988-10-14 New Japan Radio Co Ltd Ｐｎｐトランジスタ

Also Published As

Publication number Publication date
TW197529B (enrdf_load_stackoverflow) 1993-01-01
CN1062995A (zh) 1992-07-22
KR920013754A (ko) 1992-07-29

Similar Documents

Publication Publication Date Title
US4001869A (en) Mos-capacitor for integrated circuits
US4005469A (en) P-type-epitaxial-base transistor with base-collector Schottky diode clamp
US3962718A (en) Capacitance circuit
JPS6229904B2 (enrdf_load_stackoverflow)
JPS59159560A (ja) 半導体装置
US4030954A (en) Method of manufacturing a semiconductor integrated circuit device
US3840409A (en) Insulating layer pedestal transistor device and process
JPH05343411A (ja) 半導体装置およびその製造方法
JPS5811743B2 (ja) ハンドウタイソウチノ セイゾウホウホウ
JPS58186965A (ja) トランジスタ
KR920010596B1 (ko) Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터
JPH031544A (ja) ラテラルトランジスタ
JP2587424B2 (ja) 半導体集積回路装置の製造方法
JPH06196638A (ja) 半導体装置
JP2932076B2 (ja) 半導体装置の製造方法
JPH0245330B2 (enrdf_load_stackoverflow)
JPS61208260A (ja) 半導体装置
JPS61111575A (ja) 半導体装置
JPS59181058A (ja) 半導体装置
JPH065793A (ja) 半導体装置の製造方法
JPS60140867A (ja) 半導体装置
JPH11204536A (ja) 半導体装置及びその製造方法
JPH05121426A (ja) 半導体装置
JPH06151733A (ja) バイポーラ型半導体装置およびその製造方法
JPS59189671A (ja) 半導体装置