CN106254726B - 摄像装置及摄像模块 - Google Patents

摄像装置及摄像模块 Download PDF

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Publication number
CN106254726B
CN106254726B CN201610023434.2A CN201610023434A CN106254726B CN 106254726 B CN106254726 B CN 106254726B CN 201610023434 A CN201610023434 A CN 201610023434A CN 106254726 B CN106254726 B CN 106254726B
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electrode
pixel
pixel unit
sensitivity
voltage
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Chinese (zh)
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CN106254726A (zh
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三宅康夫
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201610023434.2A 2015-06-08 2016-01-14 摄像装置及摄像模块 Active CN106254726B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-115746 2015-06-08
JP2015115746A JP6562250B2 (ja) 2015-06-08 2015-06-08 撮像装置および撮像モジュール

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CN106254726A CN106254726A (zh) 2016-12-21
CN106254726B true CN106254726B (zh) 2020-05-26

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US (1) US10199408B2 (enExample)
JP (1) JP6562250B2 (enExample)
CN (1) CN106254726B (enExample)

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CN109300923B (zh) 2017-07-25 2023-11-17 松下知识产权经营株式会社 摄像装置
JP2019041018A (ja) * 2017-08-25 2019-03-14 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP7308440B2 (ja) 2017-09-28 2023-07-14 パナソニックＩｐマネジメント株式会社 撮像装置、およびカメラシステム
US10334191B1 (en) * 2018-03-02 2019-06-25 Omnivision Technologies, Inc. Pixel array with embedded split pixels for high dynamic range imaging
US10893222B2 (en) * 2018-03-29 2021-01-12 Panasonic Intellectual Property Management Co., Ltd. Imaging device and camera system, and driving method of imaging device
WO2020054373A1 (ja) 2018-09-14 2020-03-19 パナソニックＩｐマネジメント株式会社 撮像装置および撮像方法
JP7357297B2 (ja) * 2018-09-14 2023-10-06 パナソニックＩｐマネジメント株式会社 撮像装置および撮像方法
JP7664529B2 (ja) * 2019-04-26 2025-04-18 パナソニックＩｐマネジメント株式会社 撮像素子
JP7664528B2 (ja) 2019-04-26 2025-04-18 パナソニックＩｐマネジメント株式会社 撮像素子
JP7599156B2 (ja) 2019-04-26 2024-12-13 パナソニックＩｐマネジメント株式会社 撮像素子
JP2022177339A (ja) * 2019-10-30 2022-12-01 パナソニックＩｐマネジメント株式会社 撮像素子
US11451717B2 (en) * 2019-11-05 2022-09-20 Omnivision Technologies, Inc. Multi-cell pixel array for high dynamic range image sensors
CN116195267A (zh) * 2020-09-29 2023-05-30 松下知识产权经营株式会社 摄像装置

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CN101937298A (zh) * 2009-06-30 2011-01-05 索尼公司 触摸传感器和显示设备
CN103487967A (zh) * 2012-06-08 2014-01-01 株式会社日本显示器 液晶显示装置

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US20160360134A1 (en) 2016-12-08
JP2017005051A (ja) 2017-01-05
JP6562250B2 (ja) 2019-08-21
US10199408B2 (en) 2019-02-05
CN106254726A (zh) 2016-12-21

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