CN106128964A - 一种叠层集成电路封装结构的封装方法 - Google Patents
一种叠层集成电路封装结构的封装方法 Download PDFInfo
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- CN106128964A CN106128964A CN201610560249.7A CN201610560249A CN106128964A CN 106128964 A CN106128964 A CN 106128964A CN 201610560249 A CN201610560249 A CN 201610560249A CN 106128964 A CN106128964 A CN 106128964A
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- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000012856 packing Methods 0.000 title claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 30
- 239000011159 matrix material Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005538 encapsulation Methods 0.000 claims abstract description 10
- 238000003475 lamination Methods 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000004899 motility Effects 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 37
- 238000004806 packaging method and process Methods 0.000 description 7
- 238000005452 bending Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/822—Applying energy for connecting
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
Claims (7)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811034307.8A CN109411365A (zh) | 2016-07-17 | 2016-07-17 | 一种防止弯折翘曲的叠层集成电路封装结构的封装方法 |
CN201610560249.7A CN106128964B (zh) | 2016-07-17 | 2016-07-17 | 一种叠层集成电路封装结构的封装方法 |
CN201811034306.3A CN109411361A (zh) | 2016-07-17 | 2016-07-17 | 一种叠层集成电路封装结构的封装方法 |
CN201811034301.0A CN109411371A (zh) | 2016-07-17 | 2016-07-17 | 叠层集成电路封装结构的封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610560249.7A CN106128964B (zh) | 2016-07-17 | 2016-07-17 | 一种叠层集成电路封装结构的封装方法 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811034301.0A Division CN109411371A (zh) | 2016-07-17 | 2016-07-17 | 叠层集成电路封装结构的封装方法 |
CN201811034306.3A Division CN109411361A (zh) | 2016-07-17 | 2016-07-17 | 一种叠层集成电路封装结构的封装方法 |
CN201811034307.8A Division CN109411365A (zh) | 2016-07-17 | 2016-07-17 | 一种防止弯折翘曲的叠层集成电路封装结构的封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106128964A true CN106128964A (zh) | 2016-11-16 |
CN106128964B CN106128964B (zh) | 2018-10-02 |
Family
ID=57283868
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811034301.0A Withdrawn CN109411371A (zh) | 2016-07-17 | 2016-07-17 | 叠层集成电路封装结构的封装方法 |
CN201811034307.8A Pending CN109411365A (zh) | 2016-07-17 | 2016-07-17 | 一种防止弯折翘曲的叠层集成电路封装结构的封装方法 |
CN201811034306.3A Pending CN109411361A (zh) | 2016-07-17 | 2016-07-17 | 一种叠层集成电路封装结构的封装方法 |
CN201610560249.7A Active CN106128964B (zh) | 2016-07-17 | 2016-07-17 | 一种叠层集成电路封装结构的封装方法 |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811034301.0A Withdrawn CN109411371A (zh) | 2016-07-17 | 2016-07-17 | 叠层集成电路封装结构的封装方法 |
CN201811034307.8A Pending CN109411365A (zh) | 2016-07-17 | 2016-07-17 | 一种防止弯折翘曲的叠层集成电路封装结构的封装方法 |
CN201811034306.3A Pending CN109411361A (zh) | 2016-07-17 | 2016-07-17 | 一种叠层集成电路封装结构的封装方法 |
Country Status (1)
Country | Link |
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CN (4) | CN109411371A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110444527A (zh) * | 2019-07-23 | 2019-11-12 | 中国科学技术大学 | 一种芯片封装结构、装置及方法 |
CN111081687A (zh) * | 2019-12-16 | 2020-04-28 | 东莞记忆存储科技有限公司 | 一种堆叠式芯片封装结构及其封装方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109103165B (zh) * | 2018-07-03 | 2019-12-10 | 中国电子科技集团公司第二十九研究所 | Ltcc基板三维堆叠结构及其气密封装方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010048152A1 (en) * | 1998-06-30 | 2001-12-06 | Moden Walter L. | Stackable ceramic fbga for high thermal applications |
CN102332410A (zh) * | 2011-09-29 | 2012-01-25 | 山东华芯半导体有限公司 | 一种芯片的封装方法及其封装结构 |
CN103208431A (zh) * | 2012-01-17 | 2013-07-17 | 南茂科技股份有限公司 | 半导体封装结构及其制作方法 |
CN104332413A (zh) * | 2014-05-30 | 2015-02-04 | 中国电子科技集团公司第十研究所 | 一体化集成t/r组件芯片的3d组装方法 |
US20150162283A1 (en) * | 2013-12-09 | 2015-06-11 | Aeroflex Colorado Springs, Inc. | Integrated circuit shielding technique utilizing stacked die technology incorporating top and bottom nickel-iron alloy shields having a low coefficient of thermal expansion |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6045045A (ja) * | 1983-08-23 | 1985-03-11 | Shinko Electric Ind Co Ltd | 多層セラミックパッケ−ジ |
JPH04196579A (ja) * | 1990-11-28 | 1992-07-16 | Fujitsu Ltd | 積層型半導体装置 |
TW373308B (en) * | 1995-02-24 | 1999-11-01 | Agere Systems Inc | Thin packaging of multi-chip modules with enhanced thermal/power management |
JP2002076167A (ja) * | 2000-08-29 | 2002-03-15 | Sony Corp | 半導体チップ、積層型半導体パッケージ、及びそれらの作製方法 |
JP2004228117A (ja) * | 2003-01-20 | 2004-08-12 | Idea System Kk | 半導体装置および半導体パッケージ |
KR100665217B1 (ko) * | 2005-07-05 | 2007-01-09 | 삼성전기주식회사 | 반도체 멀티칩 패키지 |
US8354743B2 (en) * | 2010-01-27 | 2013-01-15 | Honeywell International Inc. | Multi-tiered integrated circuit package |
-
2016
- 2016-07-17 CN CN201811034301.0A patent/CN109411371A/zh not_active Withdrawn
- 2016-07-17 CN CN201811034307.8A patent/CN109411365A/zh active Pending
- 2016-07-17 CN CN201811034306.3A patent/CN109411361A/zh active Pending
- 2016-07-17 CN CN201610560249.7A patent/CN106128964B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010048152A1 (en) * | 1998-06-30 | 2001-12-06 | Moden Walter L. | Stackable ceramic fbga for high thermal applications |
CN102332410A (zh) * | 2011-09-29 | 2012-01-25 | 山东华芯半导体有限公司 | 一种芯片的封装方法及其封装结构 |
CN103208431A (zh) * | 2012-01-17 | 2013-07-17 | 南茂科技股份有限公司 | 半导体封装结构及其制作方法 |
US20150162283A1 (en) * | 2013-12-09 | 2015-06-11 | Aeroflex Colorado Springs, Inc. | Integrated circuit shielding technique utilizing stacked die technology incorporating top and bottom nickel-iron alloy shields having a low coefficient of thermal expansion |
CN104332413A (zh) * | 2014-05-30 | 2015-02-04 | 中国电子科技集团公司第十研究所 | 一体化集成t/r组件芯片的3d组装方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110444527A (zh) * | 2019-07-23 | 2019-11-12 | 中国科学技术大学 | 一种芯片封装结构、装置及方法 |
CN111081687A (zh) * | 2019-12-16 | 2020-04-28 | 东莞记忆存储科技有限公司 | 一种堆叠式芯片封装结构及其封装方法 |
CN111081687B (zh) * | 2019-12-16 | 2022-02-01 | 东莞记忆存储科技有限公司 | 一种堆叠式芯片封装结构及其封装方法 |
Also Published As
Publication number | Publication date |
---|---|
CN109411365A (zh) | 2019-03-01 |
CN109411371A (zh) | 2019-03-01 |
CN106128964B (zh) | 2018-10-02 |
CN109411361A (zh) | 2019-03-01 |
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Effective date of registration: 20180828 Address after: 325600 Yuhong Road, Hongqiao Town, Yueqing, Zhejiang Province, No. 14 Applicant after: Gao Yanni Address before: 226300 266 Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu Applicant before: Wang Peipei |
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Effective date of registration: 20190625 Address after: 226000 West Group 8 of Sun Liqiao Village, Xingdong Town, Tongzhou District, Nantong City, Jiangsu Province Patentee after: Nantong Hualong microelectronics Limited by Share Ltd Address before: 325600 Yuhong Road, Hongqiao Town, Yueqing, Zhejiang Province, No. 14 Patentee before: Gao Yanni |