CN106068558A - 包括高密度互连和重分布层的集成器件 - Google Patents

包括高密度互连和重分布层的集成器件 Download PDF

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Publication number
CN106068558A
CN106068558A CN201580011603.4A CN201580011603A CN106068558A CN 106068558 A CN106068558 A CN 106068558A CN 201580011603 A CN201580011603 A CN 201580011603A CN 106068558 A CN106068558 A CN 106068558A
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China
Prior art keywords
die
interconnects
implementations
integrated device
redistribution
Prior art date
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Pending
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CN201580011603.4A
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English (en)
Chinese (zh)
Inventor
D·W·金
H·B·蔚
J·S·李
S·顾
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Qualcomm Inc
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Qualcomm Inc
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Publication of CN106068558A publication Critical patent/CN106068558A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/10—Configurations of laterally-adjacent chips

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
CN201580011603.4A 2014-03-04 2015-03-04 包括高密度互连和重分布层的集成器件 Pending CN106068558A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/196,817 US9230936B2 (en) 2014-03-04 2014-03-04 Integrated device comprising high density interconnects and redistribution layers
US14/196,817 2014-03-04
PCT/US2015/018784 WO2015134638A1 (en) 2014-03-04 2015-03-04 Integrated device comprising high density interconnects and redistribution layers

Publications (1)

Publication Number Publication Date
CN106068558A true CN106068558A (zh) 2016-11-02

Family

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Family Applications (1)

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CN201580011603.4A Pending CN106068558A (zh) 2014-03-04 2015-03-04 包括高密度互连和重分布层的集成器件

Country Status (5)

Country Link
US (1) US9230936B2 (enExample)
EP (1) EP3114707A1 (enExample)
JP (1) JP2017507495A (enExample)
CN (1) CN106068558A (enExample)
WO (1) WO2015134638A1 (enExample)

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CN109494162A (zh) * 2017-09-11 2019-03-19 日月光半导体制造股份有限公司 多模件扇出型封装及工艺
CN112420531A (zh) * 2020-11-27 2021-02-26 上海易卜半导体有限公司 半导体封装方法、半导体组件以及包含其的电子设备
WO2022165854A1 (zh) * 2021-02-08 2022-08-11 广东省科学院半导体研究所 一种芯片互连封装结构及方法
CN115298819A (zh) * 2020-03-23 2022-11-04 高通股份有限公司 包括衬底以及与衬底耦合的高密度互连集成器件的封装件

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US10727185B2 (en) 2016-09-30 2020-07-28 Intel Corporation Multi-chip package with high density interconnects
US9799618B1 (en) * 2016-10-12 2017-10-24 International Business Machines Corporation Mixed UBM and mixed pitch on a single die
US10181449B1 (en) * 2017-09-28 2019-01-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure
KR102124892B1 (ko) * 2017-09-29 2020-06-22 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 팬-아웃 패키징 공정에서의 범프 정렬
US11217555B2 (en) * 2017-09-29 2022-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Aligning bumps in fan-out packaging process
US10957672B2 (en) * 2017-11-13 2021-03-23 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of manufacturing the same
US10867954B2 (en) 2017-11-15 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect chips
US10679946B2 (en) * 2018-04-10 2020-06-09 Wispry, Inc. Methods and devices for solderless integration of multiple semiconductor dies on flexible substrates
US10665673B2 (en) 2018-06-28 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit structure with non-gated well tap cell
US11322450B2 (en) 2018-10-18 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Chip package and method of forming the same
US11832391B2 (en) * 2020-09-30 2023-11-28 Qualcomm Incorporated Terminal connection routing and method the same
US11705420B2 (en) * 2020-10-29 2023-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-bump connection to interconnect structure and manufacturing method thereof
US11869833B2 (en) * 2021-09-15 2024-01-09 Qualcomm Incorporated Package comprising a substrate with a via interconnect coupled to a trace interconnect and method of fabricating the same
CN118202460A (zh) * 2021-11-05 2024-06-14 美商艾德亚半导体接合科技有限公司 多沟道器件堆叠
US20240421095A1 (en) * 2023-06-19 2024-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof

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CN109494162A (zh) * 2017-09-11 2019-03-19 日月光半导体制造股份有限公司 多模件扇出型封装及工艺
US11152274B2 (en) 2017-09-11 2021-10-19 Advanced Semiconductor Engineering, Inc. Multi-moldings fan-out package and process
CN115298819A (zh) * 2020-03-23 2022-11-04 高通股份有限公司 包括衬底以及与衬底耦合的高密度互连集成器件的封装件
CN112420531A (zh) * 2020-11-27 2021-02-26 上海易卜半导体有限公司 半导体封装方法、半导体组件以及包含其的电子设备
WO2022165854A1 (zh) * 2021-02-08 2022-08-11 广东省科学院半导体研究所 一种芯片互连封装结构及方法
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Publication number Publication date
US20150255416A1 (en) 2015-09-10
WO2015134638A1 (en) 2015-09-11
EP3114707A1 (en) 2017-01-11
US9230936B2 (en) 2016-01-05
JP2017507495A (ja) 2017-03-16

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Application publication date: 20161102