CN106041329A - 晶片的生成方法 - Google Patents
晶片的生成方法 Download PDFInfo
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Abstract
提供晶片的生成方法,能够从锭高效地生成晶片。晶片的生成方法包含改质层形成步骤,将对于六方晶单晶锭具有透过性的波长的激光束的聚光点定位在距正面相当于要生成的晶片厚度的深度,并且使聚光点与六方晶单晶锭相对地移动而对正面照射激光束,形成与正面平行的改质层和从改质层起伸长的裂痕。在改质层形成步骤中,以激光束的聚光点从锭的内周朝向外周相对地移动的方式照射激光束。
Description
技术领域
本发明涉及晶片的生成方法,将六方晶单晶锭切片成晶片状。
背景技术
在以硅等作为原材料的晶片的正面上层叠功能层,在该功能层上在通过多个分割预定线划分出的区域中形成有IC、LSI等各种器件。并且,通过切削装置、激光加工装置等加工装置对晶片的分割预定线实施加工,将晶片分割成各个器件芯片,分割得到的器件芯片广泛应用于移动电话、个人计算机等各种电子设备。
并且,在以SiC、GaN等六方晶单晶作为材料的晶片的正面上层叠有功能层,在所层叠的功能层上通过形成为格子状的多条分割预定线进行划分而形成有功率器件或者LED、LD等光器件。
形成有器件的晶片通常是利用划片锯对锭进行切片而生成的,对切片得到的晶片的正面背面进行研磨而精加工成镜面(例如,参照日本特开2000-94221号公报)。
在该划片锯中,将直径约为100~300μm的钢琴丝等一根金属丝缠绕在通常二~四条设置于间隔辅助辊上的多个槽中,按照一定间距彼此平行配置且使金属丝在一定方向或者双向上行进,将锭切片成多个晶片。
但是,当利用划片锯将锭切断,并对正面背面进行研磨而生成晶片时,会浪费锭的70~80%,存在不经济这样的问题。特别是SiC、GaN等六方晶单晶锭的莫氏硬度较高,利用划片锯而进行的切断很困难,花费相当长的时间,生产性较差,在高效地生成晶片方面存在课题。
为了解决这些问题,在日本特开2013-49161号公报中记载了如下技术:将对于SiC具有透过性的波长的激光束的聚光点定位在六方晶单晶锭的内部而进行照射,在切断预定面上形成改质层和裂痕,并施加外力而沿着形成有改质层和裂痕的切断预定面割断晶片,从锭分离晶片。
在该公开公报所记载的技术中,以脉冲激光束的第一照射点和距该第一照射点最近的第二照射点处于规定的位置的方式,将脉冲激光束的聚光点沿着切断预定面呈螺旋状照射,或者呈直线状照射,而在锭的切断预定面上形成非常高密度的改质层和裂痕。
专利文献1:日本特开2000-94221号公报
专利文献2:日本特开2013-49461号公报
但是,在专利文献2所记载的锭的切断方法中,激光束的照射方法相对于锭呈螺旋状或者直线状,对于在直线状的情况下扫描激光束的方向则没有任何规定。
在专利文献2所记载的锭的切断方法中,将激光束的第一照射点与距该第一照射点最近的第二照射点之间的间距设定为1μm~10μm。该间距是从改质层产生的裂纹沿着c面延伸的间距。
由于以这种方式照射激光束时的间距非常小,因此不论激光束的照射方法是螺旋状或者直线状,都需要以非常小的间距间隔照射激光束,存在无法充分实现生产性的提高这样的问题。
发明内容
本发明是鉴于这样的点而完成的,其目的在于,提供一种晶片的生成方法,能够高效地从锭生成晶片。
根据本发明,提供一种晶片的生成方法,从六方晶单晶锭生成晶片,该六方晶单晶锭具有:第一面和位于该第一面的相反侧的第二面;从该第一面至该第二面的c轴;以及与该c轴垂直的c面,该晶片的生成方法的特征在于,具有如下的步骤:分离起点形成步骤,将对于六方晶单晶锭具有透过性的波长的激光束的聚光点定位在距锭内的该第一面相当于要生成的晶片的厚度的深度,并且使该聚光点与该六方晶单晶锭相对地移动而对该第一面照射该激光束,形成与该第一面平行的改质层和从该改质层起沿着c面伸长的裂痕而形成分离起点;以及晶片剥离步骤,在实施了该分离起点形成步骤之后,从该分离起点将相当于晶片的厚度的板状物从该六方晶单晶锭剥离而生成六方晶单晶晶片,该分离起点形成步骤包含如下的步骤:改质层形成步骤,该c轴相对于该第一面的垂线倾斜偏离角,使激光束的聚光点沿着与在该第一面和该c面之间形成偏离角的第二方向垂直的第一方向相对地移动而形成在第一方向上延伸的直线状的改质层;以及转位步骤,在该第二方向上使该聚光点相对地移动而转位规定的量,使激光束的聚光点从锭的内周侧的内部朝向外周相对地移动而实施该改质层形成步骤。
优选六方晶单晶锭从SiC锭、GaN锭或者AlN锭中进行选择。
根据本发明的晶片的生成方法,由于重复如下的步骤:使激光束的聚光点在与锭的第一面与c面之间形成有偏离角的第二方向垂直的第一方向上相对地移动,而在锭内部形成在第一方向上延伸的直线状的改质层,并且在形成有该偏离角的第二方向上进行了转位之后,使激光束的聚光点在与该第二方向垂直的第一方向上相对地移动而形成在第一方向上延伸的直线状的改质层,因此改质层形成在距第一面规定的深度,并且裂痕沿着c面在改质层的两侧传播,从而通过裂痕连结一个改质层和邻接的改质层,能够容易地从分离起点将相当于晶片的厚度的板状物从六方晶单晶锭剥离,而生成六方晶单晶晶片。
由于将激光束的移动的方向设定为与形成有偏离角的方向垂直的方向,因此从改质层的两侧沿着c面传播而形成的裂痕伸长得非常长,能够使转位量增大到200μm~500μm左右,能够充分地实现生产性的提高,并且能够充分地减轻所丢弃的锭的量,将其抑制在30%左右。
并且,如果激光束的聚光点从锭的外周朝向内周移动,从聚光点被定位在外周的瞬间开始随着该聚光点向内周移动,集中于聚光点的激光束的功率从低到高发生变化然后稳定为高功率,但随着激光束的功率从低到高发生变化,会形成改质层的位置描绘抛物线这样的轨迹的不需要的改质层和裂痕,在晶片剥离步骤中外周部的剥离困难并且可能在外周部产生缺口而导致品质的降低,但如果使激光束的聚光点从锭的内周侧的内部朝向外周相对地移动,则因被形成在锭的内部的良好的改质层和裂痕引导而在激光束向外周离开时在外周也形成良好的改质层和裂痕,外周部的剥离变得容易并且不会在外周部上产生缺口而能够得到品质良好的晶片。
附图说明
图1是适合实施本发明的晶片的生成方法的激光加工装置的立体图。
图2是激光束产生单元的框图。
图3的(A)是六方晶单晶锭的立体图,图3的(B)是其主视图。
图4是说明分离起点形成步骤的立体图。
图5是六方晶单晶锭的俯视图。
图6是说明改质层形成步骤的示意性剖面图。
图7是说明改质层形成步骤的示意性俯视图。
图8的(A)是说明转位步骤的示意性俯视图,图8的(B)是说明转位量的示意性俯视图。
图9是说明改质层形成步骤时的激光束的照射方法的示意性俯视图。
图10是说明晶片剥离步骤的立体图。
图11是所生成的六方晶单晶晶片的立体图。
标号说明
2:激光加工装置;11:六方晶单晶锭;11a:第一面(正面);11b:第二面(背面);13:第一定向平面;15:第二定向平面;17:第一面的垂线;19:c轴;21:c面;23:改质层;25:裂痕;26:支承工作台;30:激光束照射单元;36:聚光器(激光头);54:按压机构;56:头;58:按压部件。
具体实施方式
以下,参照附图详细地说明本发明的实施方式。参照图1,示出了适合实施本发明的晶片的生成方法的激光加工装置2的立体图。激光加工装置2包含以能够在X轴方向上移动的方式搭载在静止基台4上的第一滑动块6。
第一滑动块6借助由滚珠丝杠8和脉冲电动机10构成的加工进给机构12沿着一对导轨14在加工进给方向、即X轴方向上移动。
第二滑动块16以能够在Y轴方向上移动的方式搭载在第一滑动块6上。即,第二滑动块16借助由滚珠丝杠18和脉冲电动机20构成的分度进给机构22沿着一对导轨24在分度进给方向、即Y轴方向上移动。
在第二滑动块16上搭载有支承工作台26。支承工作台26能够借助加工进给机构12和分度进给机构22在X轴方向和Y轴方向上移动,并且借助收纳在第二滑动块16中的电动机而旋转。
在静止基台4上竖立设置有柱28,在该柱28上安装有激光束照射机构(激光束照射构件)30。激光束照射机构30由收纳在外壳32中的图2所示的激光束产生单元34和安装于外壳32的前端的聚光器(激光头)36构成。在外壳32的前端安装有具有显微镜和照相机的摄像单元38,该摄像单元38与聚光器36在X轴方向上排列。
如图2所示,激光束产生单元34包含振荡出YAG激光或者YVO4激光的激光振荡器40、重复频率设定构件42、脉冲宽度调整构件44以及功率调整构件46。虽然未特别图示,但激光振荡器40具有布鲁斯特窗,从激光振荡器40射出的激光束是直线偏光的激光束。
借助激光束产生单元34的功率调整构件46被调整为规定的功率的脉冲激光束被聚光器36的反射镜48反射,进而借助聚光透镜50将聚光点定位在作为固定于支承工作台26的被加工物的六方晶单晶锭11的内部而进行照射。
参照图3的(A),示出了作为加工对象物的六方晶单晶锭11的立体图。图3的(B)是图3的(A)所示的六方晶单晶锭11的主视图。六方晶单晶锭(以下,有时简称为锭)11由SiC单晶锭、GaN单晶锭或者ALN锭构成。
锭11具有第一面(上表面)11a和与第一面11a相反侧的第二面(背面)11b。由于锭11的正面11a是激光束的照射面因此将其研磨成镜面。
锭11具有第一定向平面13和与第一定向平面13垂直的第二定向平面15。第一定向平面13的长度形成为比第二定向平面15的长度长。
锭11具有c轴19和c面21,该c轴19相对于正面11a的垂线17向第二定向平面15方向倾斜偏离角α,该c面21与c轴19垂直。c面21相对于锭11的正面11a倾斜偏离角α。通常在六方晶单晶锭11中,与较短的第二定向平面15的伸长方向垂直的方向是c轴的倾斜方向。
在锭11中按照锭11的分子级设定有无数个c面21。在本实施方式中,偏离角α被设定为4°。但是,偏离角α不限于4°,能够在例如1°~6°的范围中自由地设定而制造出锭11。
再次参照图1,在静止基台4的左侧固定有柱52,在该柱52上经由形成于柱52的开口53以能够在上下方向上移动的方式搭载有按压机构54。
在本实施方式的晶片的生成方法中,如图4所示,以锭11的第二定向平面15在X轴方向上排列的方式例如利用蜡或者粘接剂将锭11固定在支承工作台26上。
即,如图5所示,使箭头A方向与X轴相符而将锭11固定在支承工作台26上,其中,该A方向即是与形成有偏离角α的方向Y1、换言之c轴19的与正面11a的交点19a相对于锭11的正面11a的垂线17所存在的方向垂直的方向。
由此,沿着与形成有偏离角α的方向垂直的方向A扫描激光束。换言之,与形成有偏离角α的方向Y1垂直的A方向成为支承工作台26的加工进给方向。
在本发明的晶片的生成方法中,将从聚光器36射出的激光束的扫描方向设为与锭11的形成有偏离角α的方向Y1垂直的箭头A方向是很重要的。
即,本发明的晶片的生成方法的特征在于探索出如下情况:通过将激光束的扫描方向设定为上述这样的方向,从形成于锭11的内部的改质层传播的裂痕沿着c面21非常长地伸长。
在本实施方式的晶片的生成方法中,首先,实施分离起点形成步骤,将对于固定于支承工作台26的六方晶单晶锭11具有透过性的波长(例如1064nm的波长)的激光束的聚光点定位在距第一面(正面)11a相当于要生成的晶片的厚度的深度,并且使聚光点与六方晶单晶锭11相对地移动而对正面11a照射激光束,形成与正面11a平行的改质层23以及从改质层23沿着c面21传播的裂痕25而成为分离起点。
该分离起点形成步骤包含:改质层形成步骤,c轴19相对于正面11a的垂线17倾斜偏离角α,在与在c面21和正面11a之间形成有偏离角α的方向即图5的箭头Y1方向垂直的方向即A方向上使激光束的聚光点相对地移动而在锭11的内部形成改质层23和从改质层23沿着c面21传播的裂痕25;以及转位步骤,如图7和图8所示,在形成有偏离角的方向即Y轴方向上使聚光点相对地移动且转位规定的量。
如图6和图7所示,当在X轴方向上将改质层23形成为直线状时,裂痕25从改质层23的两侧沿着c面21传播而形成。在本实施方式的晶片的生成方法中包含转位量设定步骤,对从直线状的改质层23起在c面方向上传播而形成的裂痕25的宽度进行测量,设定聚光点的转位量。
在转位量设定步骤中,如图6所示,当将从直线状的改质层23起在c面方向上传播而形成在改质层23的单侧的裂痕25的宽度设为W1的情况下,将应该进行转位的规定的量W2设定为W1以上2W1以下。
这里,优选的实施方式的改质层形成步骤的激光加工方法以如下的方式设定。
光源:Nd:YAG脉冲激光
波长:1064nm
重复频率:80kHz
平均输出:3.2W
脉冲宽度:4ns
光斑直径:10μm
聚光透镜的数值孔径(NA):0.45
转位量:400μm
在上述的激光加工条件中,在图6中,将从改质层23沿着c面传播的裂痕25的宽度W1设定为大致250μm,将转位量W2设定为400μm。
但是,激光束的平均输出不限于3.2W,在本实施方式的加工方法中,将平均输出设定为2W~4.5W而得到良好的结果。在平均输出为2W的情况下,裂痕25的宽度W1为大致100μm,在平均输出为4.5W的情况下,裂痕25的宽度W1为大致350μm。
由于在平均输出小于2W的情况下和大于4.5W的情况下,无法在锭11的内部形成良好的改质层23,因此优选照射的激光束的平均输出在2W~4.5W的范围内,在本实施方式中对锭11照射平均输出为3.2W的激光束。在图6中,将形成改质层23的聚光点的距正面11a的深度D1设定为500μm。
参照图8的(A),示出了用于说明激光束的扫描方向的示意图。利用往路X1和返路X2实施分离起点形成步骤,对于利用往路X1在六方晶单晶锭11中形成了改质层23的激光束的聚光点而言,在转位了规定的量之后,利用返路X2在六方晶单晶锭11中形成改质层23。
并且,在分离起点形成步骤中,在激光束的聚光点的应该进行转位的规定的量被设定为W以上2W以下的情况下,优选在六方晶单晶锭11中定位激光束的聚光点并将聚光点的转位量设定为W以下直到形成最初的改质层23为止。
例如,如图8的(B)所示,在应该对激光束的聚光点进行转位的规定的量为400μm的情况下,以转位量200μm执行多次激光束的扫描直到在锭11中形成最初的改质层23为止。
最初的激光束的扫描是空打,如果判明在锭11的内部最初形成了改质层23,则设定为转位量400μm而在锭11的内部形成改质层23。
接着参照图9,对在锭11的内部形成改质层时的激光束的照射方法进行说明。在本实施方式中,首先,使聚光点定位在与C1对应的锭11的内周侧的内部,以激光束的聚光点在箭头X1所示的方向上相对地移动的方式照射激光束,接着使聚光点再次定位在与C1对应的锭11的内周侧的内部,以激光束的聚光点在箭头X2所示的方向上相对地移动的方式照射激光束。
接着,使激光束在形成有偏离角的Y方向上转位进给规定的量,将聚光点定位在与C2对应的锭11的内周侧的内部,以使激光束的聚光点在箭头X1所示的方向上从锭11的内周朝向外周相对地移动的方式照射激光束。
接着,使激光束的聚光点定位在与C2对应的锭11的内周侧的内部,以使激光束的聚光点从箭头X2所示的锭11的内周朝向外周移动的方式照射激光束。使锭11在形成有偏离角的Y方向上转位进给规定的量,并且在C3、C4的左右两个方向上实施该步骤。
如果以这种方式使激光束的聚光点从锭11的内周部的内部朝向外周相对地移动而在锭11的内部形成改质层23,则能够得到如下的品质良好的晶片:因被形成在锭11的内部的良好的改质层23和裂痕25引导而在激光束向外周离开时在外周也形成良好的改质层23和裂痕25,外周部的剥离变得容易并且不会在外周部上产生缺口。
与此相反,当如图8的(A)所示使激光束的聚光点从锭11的外周朝向内周移动时,从聚光点被定位在锭11的外周的瞬间开始随着该聚光点向内周移动,集中于聚光点的激光束的功率从低到高发生变化然后再次稳定为高功率,但随着激光束的功率从低到高发生变化,会形成改质层23的位置描绘抛物线这样的轨迹的不需要的改质层23和裂痕25,在晶片剥离步骤中外周部的剥离困难并且可能在外周部产生缺口而导致品质的降低。
在如图8的(B)所示那样一边转位进给规定的量一边在锭11的整个区域的深度为D1的位置上形成多个改质层23和从改质层23起沿着c面21延伸的裂痕25完毕之后,实施晶片剥离工序,施加外力而从六方晶单晶锭11从由改质层25和裂痕23构成的分离起点起将相当于应形成的晶片的厚度的板状物分离而生成六方晶单晶晶片27。
例如通过图10所示的按压机构54实施该晶片剥离工序。按压机构54包含:头56,其借助内设在柱52内的移动机构而在上下方向上移动;以及按压部件58,其相对于头56如图10的(B)所示那样在箭头R方向上旋转。
如图10的(A)所示,将按压机构54定位在固定于支承工作台26上的锭11的上方,如图10的(B)所示,使头56下降直到按压部件58压接于锭11的正面11a为止。
如果在使按压部件58压接于锭11的正面11a的状态下使按压部件58在箭头R方向上旋转,则锭11产生扭转应力,锭11从形成有改质层23和裂痕25的分离起点发生断裂,能够从六方晶单晶锭11分离出图11所示的六方晶单晶晶片27。
优选在将晶片27从锭11分离之后,对晶片27的分离面和锭11的分离面进行研磨而加工成镜面。
Claims (2)
1.一种晶片的生成方法,从六方晶单晶锭生成晶片,该六方晶单晶锭具有:第一面和位于该第一面的相反侧的第二面;从该第一面至该第二面的c轴;以及与该c轴垂直的c面,该晶片的生成方法的特征在于,具有如下的步骤:
分离起点形成步骤,将对于六方晶单晶锭具有透过性的波长的激光束的聚光点定位在锭内的距该第一面相当于要生成的晶片的厚度的深度,并且使该聚光点与该六方晶单晶锭相对地移动而对该第一面照射该激光束,形成与该第一面平行的改质层和从该改质层起沿着c面伸长的裂痕而形成分离起点;以及
晶片剥离步骤,在实施了该分离起点形成步骤之后,从该分离起点将相当于晶片的厚度的板状物从该六方晶单晶锭剥离而生成六方晶单晶晶片,
该分离起点形成步骤包含如下的步骤:
改质层形成步骤,该c轴相对于该第一面的垂线倾斜偏离角,使激光束的聚光点沿着与在该第一面和该c面之间形成偏离角的第二方向垂直的第一方向相对地移动,而形成在第一方向上延伸的直线状的改质层;以及
转位步骤,在该第二方向上使该聚光点相对地移动而转位规定的量,
使激光束的聚光点从锭的内周侧的内部朝向外周相对地移动而实施该改质层形成步骤。
2.根据权利要求1所述的晶片的生成方法,其中,
六方晶单晶锭从SiC锭、GaN锭或者AlN锭中进行选择。
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