CN106064425A - 晶片的生成方法 - Google Patents
晶片的生成方法 Download PDFInfo
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Abstract
提供晶片的生成方法,抑制磨削磨具的消耗量并缩短磨削时间。晶片的生成方法从具有第一端面以及位于该第一端面的相反侧的第二端面的化合物单晶锭生成晶片,包含分离面形成步骤,由卡盘工作台对化合物单晶锭的第二端面进行保持,将对于化合物单晶锭具有透过性的波长的激光束的聚光点定位在距第一端面相当于要生成的晶片的厚度的深度,使该聚光点与化合物单晶锭相对地移动而对该第一端面照射该激光束,形成由与该第一端面平行的改质层和从该改质层伸长的裂痕构成的分离面。将构成化合物单晶锭的原子量大的原子和原子量小的原子之中原子量小的原子排列的极性面作为该第一端面,在平坦化步骤中对原子量小的原子排列的极性面即第一端面进行磨削。
Description
技术领域
本发明涉及晶片的生成方法,从化合物单晶锭生成晶片。
背景技术
在以硅等作为原材料的晶片的正面上层叠功能层,在该功能层上在通过多个分割预定线划分出的区域中形成有IC、LSI等各种器件。并且,通过切削装置、激光加工装置等加工装置对晶片的分割预定线实施加工,将晶片分割成各个器件芯片,分割得到的器件芯片广泛应用于移动电话、个人计算机等各种电子设备。
并且,在以SiC、GaN等六方晶单晶作为材料的晶片的正面上层叠有功能层,在所层叠的功能层上通过形成为格子状的多条分割预定线进行划分而形成功率器件或者LED、LD等光器件。
形成有器件的晶片通常是利用线切割对锭进行切片而生成的,对切片得到的晶片的正面背面进行研磨而精加工成镜面(例如,参照日本特开2000-94221号公报)。
在该线切割中,将直径约为100~300μm的钢琴丝等一根金属丝缠绕在通常设置于二~四条间隔辅助辊上的多个槽中,按照一定间距彼此平行配置且使金属丝在一定方向或者双向上行进,将锭切片成多个晶片。
但是,当利用线切割将锭切断,并对正面背面进行研磨而生成晶片时,会浪费锭的70~80%,存在不经济这样的问题。特别是SiC、GaN等化合物单晶锭的莫氏硬度较高,利用线切割而进行的切断很困难,花费相当长的时间,生产性较差,在高效地生成晶片方面存在课题。
为了解决这些问题,在日本特开2013-49161号公报中记载了如下技术:将对于SiC具有透过性的波长的激光束的聚光点定位在化合物单晶锭的内部而进行照射,在切断预定面上形成改质层和裂痕,并施加外力而沿着形成有改质层和裂痕的切断预定面割断晶片,从锭分离晶片。
专利文献1:日本特开第2000-94221号公报
专利文献2:日本特开第2013-49161号公报
但是,在专利文献2所记载的锭的切断方法中存在如下的课题:为了从晶片分离后的锭的端面再次照射激光束而形成包含改质层和从改质层传播的裂痕的分离面,需要对锭的端面进行磨削而精加工为平坦,对锭的端面进行磨削的磨削磨具的消耗量很大并且耗费时间且生产性差。
发明内容
本发明是鉴于上述的点而完成的,其目的在于提供一种晶片的生成方法,该晶片的生成方法在对化合物单晶锭的端面进行磨削的平坦化工序中,能够抑制磨削磨具的消耗量并且能够缩短磨削时间。
根据本发明,提供一种晶片的生成方法,从化合物单晶锭生成晶片,该化合物单晶锭具有第一端面以及位于该第一端面的相反侧的第二端面,该晶片的生成方法的特征在于,具有如下的步骤:分离面形成步骤,由卡盘工作台对化合物单晶锭的该第二端面进行保持,将对于化合物单晶锭具有透过性的波长的激光束的聚光点定位在距该第一端面相当于要生成的晶片的厚度的深度,并且使该聚光点与化合物单晶锭相对地移动而对该第一端面照射该激光束,形成由与该第一端面平行的改质层以及从该改质层伸长的裂痕构成的分离面;晶片生成步骤,在实施了该分离面形成步骤之后,从该分离面将相当于晶片的厚度的板状物从化合物单晶锭分离而生成晶片;以及平坦化步骤,在实施了该晶片生成步骤之后,对晶片分离后的化合物单晶锭的该第一端面进行磨削而使其平坦化,在该分离面形成步骤中,将构成化合物单晶锭的原子量大的原子和原子量小的原子之中的原子量小的原子排列的极性面作为该第一端面,在该平坦化步骤中,对原子量小的原子排列的极性面即该第一端面进行磨削。
优选化合物单晶锭为SiC锭,碳(C)排列的极性面为第一端面。或者化合物单晶锭为GaN锭,氮(N)排列的极性面为第一端面。
根据本发明的晶片的生成方法,由于构成为在分离面形成步骤中,使构成化合物单晶锭的原子量大的原子和原子量小的原子之中的原子量小的原子排列的极性面为第一端面,在平坦化步骤中,对原子量小的原子排列的极性面即第一端面进行磨削,所以与对第二端面进行磨削的情况相比磨削磨具的磨损量减少为1/2~1/3并且磨削所需要的时间也减少为1/2~1/3。
附图说明
图1是适合实施本发明的晶片的生成方法的激光加工装置的立体图。
图2是激光束产生单元的框图。
图3的(A)是化合物单晶锭的立体图,图3的(B)是其主视图。
图4是对分离面形成步骤进行说明的立体图。
图5是对改质层形成步骤进行说明的示意性剖视图。
图6是对晶片生成步骤进行说明的立体图。
图7是在晶片生成步骤中所生成的晶片的立体图。
图8是示出平坦化步骤的立体图。
图9是平坦化步骤实施后的保持于卡盘工作台上的化合物单晶锭的立体图。
标号说明
2:激光加工装置;11:化合物单晶锭;11a:第一端面;11b:第二端面;13:第一定向平面;15:第二定向平面;17:改质层;19:裂痕;21:化合物单晶晶片;26:支承工作台;30:激光束照射单元;36:聚光器(激光头);54:按压机构;56:头部;58:按压部件;62:磨削单元;68:磨削磨轮;72:磨削磨具。
具体实施方式
以下,参照附图对本发明的实施方式进行详细地说明。参照图1,示出了适合实施本发明的晶片的生成方法的激光加工装置2的立体图。激光加工装置2包含以能够在X轴方向上移动的方式搭载在静止基台4上的第一滑动块6。
第一滑动块6借助由滚珠丝杠8和脉冲电动机10构成的加工进给机构12沿着一对导轨14在加工进给方向、即X轴方向上移动。
第二滑动块16以能够在Y轴方向上移动的方式搭载在第一滑动块6上。即,第二滑动块16借助由滚珠丝杠18和脉冲电动机20构成的分度进给机构22沿着一对导轨24在分度进给方向、即Y轴方向上移动。
在第二滑动块16上搭载有支承工作台26。支承工作台26能够借助加工进给机构12和分度进给机构22在X轴方向和Y轴方向上移动,并且借助收纳在第二滑动块16中的电动机而旋转。
在静止基台4上竖立设置有柱28,在该柱28上安装有激光束照射机构(激光束照射构件)30。激光束照射机构30由收纳在外壳32中的图2所示的激光束产生单元34和安装于外壳32的前端的聚光器(激光头)36构成。在外壳32的前端安装有具有显微镜和照相机的摄像单元38,该摄像单元38与聚光器36在X轴方向上排列。
如图2所示,激光束产生单元34包含振荡出YAG激光或者YVO4激光的激光振荡器40、重复频率设定构件42、脉冲宽度调整构件44以及功率调整构件46。虽然未特别图示,但激光振荡器40具有布鲁斯特窗,从激光振荡器40射出的激光束是直线偏光的激光束。
被激光束产生单元34的功率调整构件46调整到规定的功率的脉冲激光束通过聚光器36的反射镜48反射,进而借助聚光透镜50将聚光点定位在固定于支承工作台26上的被加工物即化合物单晶锭11的内部而进行照射。
参照图3的(A),示出了作为加工对象物的化合物单晶锭11的立体图。图3的(B)是图3的(A)所示的化合物单晶锭11的主视图。化合物单晶锭(以下,有时简称为锭)11由GaN单晶锭或者SiC单晶锭构成。
锭11具有第一端面11a和位于第一端面11a的相反侧的第二端面11b。由于锭11的第一端面11a为激光束的照射面,所以将其研磨成镜面。
锭11具有第一定向平面13和与第一定向平面13垂直的第二定向平面15。第一定向平面13的长度形成为比第二定向平面15的长度长。
第一端面11a为构成化合物单晶锭11的原子量大的原子和原子量小的原子之中的原子量小的原子排列的极性面。因此,第二端面11b为原子量大的原子排列的极性面。
在化合物单晶锭11为GaN锭的情况下,第一端面11a为-c面即氮(N)极性面,第二端面11b为+c面即镓(Ga)极性面。
另一方面,在化合物单晶锭11为SiC锭的情况下,第一端面11a为-c面即碳(C)极性面,第二端面11b为+c面即硅(Si)极性面。
再次参照图1,在静止基台4的左侧固定有柱52,在该柱52上经由形成于柱52的开口53而以能够在上下方向上移动的方式搭载有按压机构54。
在本实施方式的晶片的生成方法中,如图4所示,使化合物单晶锭11的第一端面11a朝上并例如利用蜡或者粘接剂将锭11固定在支承工作台26上。
如上所述,第一端面11a为构成化合物单晶锭11的原子量大的原子和原子量小的原子之中的原子量小的原子排列的极性面,在GaN锭的情况下为N极性面,在SiC锭的情况下为C极性面。
在这样将化合物单晶锭11支承于支承工作台26上之后,实施如下的分离面形成步骤:将对于固定在支承工作台26上的化合物单晶锭11具有透过性的波长(例如1064nm的波长)的激光束的聚光点定位在距第一端面11a相当于要生成的晶片的厚度的深度,并且使聚光点与化合物单晶锭11相对地移动而对第一端面11a照射激光束,如图5所示,形成与第一端面11a平行的改质层17和从改质层17传播的裂痕19从而形成分离面。
该分离面形成步骤包含如下的步骤:改质层形成步骤,使激光束的聚光点在X轴方向上相对地移动而在锭11的内部形成包含改质层17和从改质层17传播的裂痕19的分离面;以及转位步骤,使聚光点在Y轴方向上相对地移动而转位规定的量。
这里,以如下的方式设定优选的实施方式的改质层形成步骤的激光加工方法。
光源:Nd:YAG脉冲激光
波长:1064nm
重复频率:80kHz
平均输出:3.2W
脉冲宽度:4ns
光斑直径:10μm
聚光透镜的数值孔径(NA):0.45
转位量:250μm
如果以这种方式转位进给规定的量,并且完成了在锭11的整个区域的深度为D1的位置上形成多个改质层17和从改质层17传播的裂痕,则实施如下的晶片生成步骤:施加外力而从由改质层17和裂痕19构成的分离面将相当于要形成的晶片的厚度的板状物从化合物单晶锭11分离而生成化合物单晶晶片21。
该晶片生成步骤例如通过图6所示的按压机构54来实施。按压机构54包含通过内置于柱52内的移动机构而在上下方向上移动的头部56以及相对于头部56如图6的(B)所示在箭头R方向上旋转的按压部件58。
如图6的(A)所示,将按压机构54定位在固定于支承工作台26上的锭11的上方,如图6的(B)所示,将头部56下降直到按压部件58压接于锭11的第一端面11a为止。
在将按压部件58压接在锭11的第一端面11a上的状态下,当按压部件58按照箭头R方向旋转时,能够在锭11上产生扭转应力,锭11从形成有改质层17和裂痕19的分离起点断裂,从化合物单晶锭11生成图7所示的化合物单晶晶片21。
在实施了晶片生成步骤之后,实施如下的平坦化步骤:对晶片21分离后的化合物单晶锭11的第一端面11a进行磨削而将其平坦化。在该平坦化步骤中,如图8所示,使锭11的第一端面11a朝上而将锭11吸引保持在磨削装置的卡盘工作台60上。
在图8中,在轮座66上通过多个螺纹部件67以能够拆装的方式安装磨削磨轮68,该轮座66固定于磨削单元62的主轴64的前端。磨削磨轮68采用了在轮基台70的自由端部(下端部)呈环状地固定安装着多个磨削磨具72的构成。
在平坦化步骤中,一边使卡盘工作台60在箭头a所示的方向上以例如300rpm旋转,一边使磨削磨轮68在箭头b所示的方向上以例如6000rpm旋转,并且驱动未图示的磨削单元进给机构而使磨削磨轮68的磨削磨具72与锭11的第一端面11a接触。
并且,以规定的磨削进给速度(例如0.1μm/s)磨削进给磨削磨轮68,而以规定的量磨削第一端面11a使其平坦化。优选在实施了该平坦化步骤之后,对被磨削的第一端面11a进行研磨而加工成镜面。
当实施平坦化步骤时,如图9所示,化合物单晶锭11的第一端面11a被平坦化,优选在通过研磨加工将第一端面11a加工成镜面之后,再实施分离面形成步骤。
这里,以下示出了在平坦化步骤中,对磨削加工的面为第一端面11a的情况和第二端面11b的情况进行比较的加工结果。
磨削加工比较例(1)
化合物单晶锭:GaN锭
磨削量:5μm
Ga极性面的磨削:磨具的磨损量(6.3μm)、磨削时间(2.5分钟)
N极性面的磨削:磨具的磨损量(2.5μm)、磨削时间(1分钟)
磨削加工比较例(2)
化合物单晶锭:SiC锭
磨削量:5μm
Si极性面的磨削:磨具的磨损量(7.5μm)、磨削时间(3分钟)
C极性面的磨削:磨具的磨损量(3.5μm)、磨削时间(1.5分钟)
根据上述的实施方式,构成为在分离面形成步骤中,从构成化合物单晶锭11的原子量大的原子和原子量小的原子之中的原子量小的原子排列的极性面即第一端面11a侧照射激光束而在锭11的内部形成由改质层17和裂痕19构成的分离面,在平坦化步骤中,对原子量小的原子排列的极性面即第一端面11a进行磨削,所以与对第二端面11b进行磨削的情况相比,磨削磨具72的消耗量减少为1/2~1/3并且磨削所需的时间也减少为1/2~1/3。
Claims (3)
1.一种晶片的生成方法,从化合物单晶锭生成晶片,该化合物单晶锭具有第一端面以及位于该第一端面的相反侧的第二端面,该晶片的生成方法的特征在于,具有如下的步骤:
分离面形成步骤,由卡盘工作台对化合物单晶锭的该第二端面进行保持,将对于化合物单晶锭具有透过性的波长的激光束的聚光点定位在距该第一端面相当于要生成的晶片的厚度的深度,并且使该聚光点与化合物单晶锭相对地移动而对该第一端面照射该激光束,形成由与该第一端面平行的改质层以及从该改质层伸长的裂痕构成的分离面;
晶片生成步骤,在实施了该分离面形成步骤之后,从该分离面将相当于晶片的厚度的板状物从化合物单晶锭分离而生成晶片;以及
平坦化步骤,在实施了该晶片生成步骤之后,对晶片分离后的化合物单晶锭的该第一端面进行磨削而使其平坦化,
在该分离面形成步骤中,将构成化合物单晶锭的原子量大的原子和原子量小的原子之中的原子量小的原子排列的极性面作为该第一端面,
在该平坦化步骤中,对原子量小的原子排列的极性面即该第一端面进行磨削。
2.根据权利要求1所述的晶片的生成方法,其中,
该化合物单晶锭为SiC锭,碳(C)排列的极性面为该第一端面。
3.根据权利要求1所述的晶片的生成方法,其中,
该化合物单晶锭为GaN锭,氮(N)排列的极性面为该第一端面。
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US20160305042A1 (en) | 2016-10-20 |
JP6444249B2 (ja) | 2018-12-26 |
CN110712306B (zh) | 2021-12-07 |
DE102016205918A1 (de) | 2016-10-20 |
CN110712306A (zh) | 2020-01-21 |
KR102599569B1 (ko) | 2023-11-06 |
US10563321B2 (en) | 2020-02-18 |
CN106064425B (zh) | 2020-03-17 |
US20180237947A1 (en) | 2018-08-23 |
TWI699463B (zh) | 2020-07-21 |
JP2016207703A (ja) | 2016-12-08 |
TW201704568A (zh) | 2017-02-01 |
US10094047B2 (en) | 2018-10-09 |
KR20160123232A (ko) | 2016-10-25 |
KR20220162659A (ko) | 2022-12-08 |
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