TWI699463B - 晶圓的生成方法 - Google Patents
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Abstract
為提供一種在磨削化合物單晶晶錠之端面的平坦化製程中,可以抑制磨削磨石之消耗量且縮短磨削時間之晶圓的生成方法。
本發明之晶圓的生成方法,是由具有第一端面及與該第一端面為相反側的第二端面的化合物單晶晶錠生成晶圓,並包含分離面形成步驟,該分離面形成步驟是以工作夾台保持化合物單晶晶錠之該第二端面,且將對化合物單晶晶錠具有穿透性之波長的雷射光束的聚光點定位在與該第一端面距離相當於生成之晶圓厚度的深度,並且相對地移動該聚光點與化合物單晶晶錠來將該雷射光束照射在該第一端面,而形成由與該第一端面平行之改質層及從該改質層伸長之裂隙構成的分離面。其特徵在於:在該分離面形成步驟中,將構成化合物單晶晶錠之原子量大的原子與原子量小的原子之中,排列有原子量小之原子的極性面作為該第一端面,且在平坦化步驟中,是磨削排列有原子量小之原子的極性面的第一端面。
Description
本發明是有關於一種由化合物單晶晶錠生成晶圓之晶圓的生成方法。
IC、LSI等之各種元件,是在以矽等為素材之晶圓的表面積層機能層,並形成於藉由複數條分割預定線在此機能層所區劃出的區域中。並且,藉由切削裝置、雷射加工裝置等之加工裝置對晶圓之分割預定線施行加工,而將晶圓分割為一個個的元件晶片,且所分割之元件晶片被廣泛地利用於行動電話、個人電腦等之各種電子機器中。
又,功率元件或LED、LD等之光元件,是在以SiC、GaN等之六方晶體單晶為素材之晶圓的表面積層機能層,並藉由形成格子狀之複數條分割預定線區劃而形成於所積層之機能層。
形成有元件之晶圓,一般是將晶錠以線鋸切片而生成,並且研磨被切片之晶圓的表面、背面而加工成為鏡面(參照例如日本專利特開2000-94221號公報)。
該線鋸是將直徑約100~300μm之鋼琴線等的一
根鋼絲捲繞於通常設置在二~四支的間隔輔助輥上之多數條溝,並以固定的間距配置為互相平行且使鋼絲朝固定方向或雙向行進,以將晶錠切片為複數片晶圓。
然而,以線鋸切斷晶錠,並研磨表面、背面而生成晶圓時,70~80%的晶錠會被丟棄,而有不符經濟效益的問題。特別是SiC、GaN等之化合物單晶晶錠的莫式硬度高,難以用線鋸切斷,花費許多時間而生產性差,而具有有效率地生成晶圓之課題。
為了解決這些問題,在日本專利特開2013-49161號公報中已記載有一種技術,是將對SiC具有穿透性之波長的雷射光束的聚光點定位在化合物單晶晶錠的內部並進行照射,以在切斷預定面形成改質層及裂隙,並賦予外力而將晶圓沿著形成有改質層及裂隙的切斷預定面割斷,以將晶圓由晶錠分離。
專利文獻1:日本專利特開2000-94221號公報
專利文獻2:日本專利特開2013-49161號公報
然而,在專利文獻2記載之晶錠的切斷方法中,為了要從已將晶圓分離之晶錠的端面再次照射雷射光束以形成包含改質層與從改質層傳播之裂隙的分離面,必須將
晶錠之端面磨削以加工成平坦,而有使磨削晶錠端面之磨削磨石的消耗量激增且較花費時間而使生產性較差的課題。
本發明是有鑒於此點而作成的發明,其目的在於提供一種在磨削化合物單晶晶錠之端面的平坦化製程中,可以抑制磨削磨石之消耗量且縮短磨削時間之晶圓的生成方法。
根據本發明所提供的晶圓的生成方法,是由具有第一端面及與該第一端面為相反側的第二端面的化合物單晶晶錠生成晶圓,該晶圓的生成方法之特徵在於包含:分離面形成步驟,以工作夾台保持化合物單晶晶錠之該第二端面,且將對化合物單晶晶錠具有穿透性之波長的雷射光束的聚光點定位在與該第一端面距離相當於生成之晶圓厚度的深度,並且相對地移動該聚光點與化合物單晶晶錠來將該雷射光束照射在該第一端面,而形成由與該第一端面平行之改質層及從該改質層伸長之裂隙構成的分離面;晶圓生成步驟,實施該分離面形成步驟之後,從該分離面將相當於晶圓厚度的板狀物由化合物單晶晶錠分離以生成晶圓;及平坦化步驟,實施晶圓生成步驟之後,將已使晶圓分離之化合物單晶晶錠之該第一端面磨削以平坦化,在該分離面形成步驟中,將構成化合物單晶晶錠之原
子量大的原子與原子量小的原子之中,排列有原子量小之原子的極性面作為該第一端面,且在該平坦化步驟中,是磨削排列有原子量小之原子的極性面的該第一端面。
較理想的是,化合物單晶晶錠為SiC晶錠,且使排列有碳(C)之極性面成為第一端面。或者,化合物單晶晶錠為GaN晶錠,且使排列有氮(N)之極性面成為第一端面。
根據本發明之晶圓的生成方法,由於是構成為在分離面形成步驟中,將構成化合物單晶晶錠之原子量大的原子與原子量小的原子之中,排列有原子量小之原子的極性面作為第一端面,且在平坦化步驟中,磨削排列有原子量小之原子的極性面第一端面,因此磨削第二端面的情況相比較使磨削磨石的磨耗量減少為1/2~1/3且磨削所需的時間也減少為1/2~1/3。
2‧‧‧雷射加工裝置
4‧‧‧靜止基台
6‧‧‧第一滑塊
8、18‧‧‧螺桿
10、20‧‧‧脈衝馬達
11‧‧‧化合物單晶晶錠
11a‧‧‧第一端面
11b‧‧‧第二端面
12‧‧‧加工進給機構
13‧‧‧第一定向平面
14、24‧‧‧導軌
15‧‧‧第二定向平面
16‧‧‧第二滑塊
17‧‧‧改質層
19‧‧‧裂隙
21‧‧‧化合物單晶晶圓
22‧‧‧分度進給機構
26‧‧‧支撐台
28、52‧‧‧柱部
30‧‧‧雷射光束照射機構(雷射
光束照射手段)
32‧‧‧罩殼
34‧‧‧雷射光束發生單元
36‧‧‧聚光器(雷射頭)
38‧‧‧攝像單元
40‧‧‧雷射振盪器
42‧‧‧重複頻率設定手段
44‧‧‧脈衝寬度調整手段
46‧‧‧功率調整手段
48‧‧‧鏡子
50‧‧‧聚光鏡
53‧‧‧開口
54‧‧‧按壓機構
56‧‧‧頭部
58‧‧‧按壓構件
60‧‧‧工作夾台
62‧‧‧磨削單元
64‧‧‧主軸
66‧‧‧輪座
67‧‧‧螺絲
68‧‧‧磨削輪
70‧‧‧輪基台
72‧‧‧磨削磨石
R、a、b‧‧‧箭頭
D1‧‧‧深度
X、Y、Z‧‧‧方向
圖1是適合用於實施本發明之晶圓的生成方法之雷射加工裝置的立體圖。
圖2是雷射光束產生單元的方塊圖。
圖3(A)是化合物單晶晶錠之立體圖,圖3(B)是其正面圖。
圖4是說明分離面形成步驟之立體圖。
圖5是說明改質層形成步驟之示意剖面圖。
圖6(A)、(B)是說明晶圓生成步驟之立體圖。
圖7是說明在晶圓生成步驟所生成之晶圓的立體圖。
圖8是顯示平坦化步驟之立體圖。
圖9是實施平坦化步驟之後的保持於工作夾台之化合物單晶晶錠的立體圖。
以下,參照圖式詳細說明本發明的實施形態。參照圖1,顯示了適合用於實施本發明之晶圓的生成方法之雷射加工裝置2的立體圖。雷射加工裝置2包含有以可在X軸方向上移動之形式搭載於靜止基台4上的第一滑塊6。
第一滑塊6藉由以滾珠螺桿8及脈衝馬達10所構成之加工進給機構12而沿著一對導軌14在加工進給方向(亦即X軸方向)上移動。
將第二滑塊16可在Y軸方向上移動地搭載於第一滑塊6上。亦即,第二滑塊16藉由以滾珠螺桿18及脈衝馬達20所構成之分度進給機構22而沿著一對導軌24在分度進給方向(亦即Y軸方向)上移動。
第二滑塊16上搭載有支撐台26。支撐台26藉由加工進給機構12及分度進給機構22而可在X軸方向及Y軸方向上移動,並且藉由收容於第二滑塊16中的馬達而旋轉。
靜止基台4豎立設置有柱部28,並且雷射光束照射機構(雷射光束照射手段)30安裝於該柱部28。雷射光束照射機構30是由收容於罩殼32中之圖2所示的雷射光束發生單元34、及安裝於罩殼32前端的聚光器(雷射頭)36所構成。罩殼32之前端安裝有與聚光器36在X軸方向上成行且具有
顯微鏡及相機之攝像單元38。
雷射光束發生單元34是如圖2所示,包含振盪產生YAG雷射或YVO4雷射之雷射振盪器40、重複頻率設定手段42、脈衝寬度調整手段44、及功率調整手段46。雖然並無特別圖示,但雷射振盪器40具有布如士特窗(brewster window),且由雷射振盪器40出射之雷射光束為直線偏光的雷射光束。
藉由雷射光束發生單元34之功率調整手段46而調整至預定功率的脈衝雷射光束被聚光器36之鏡子48反射,進而再藉由聚光鏡50將聚光點定位於已固定在支撐台26之被加工物-即化合物單晶晶錠11的內部而進行照射。
參照圖3(A),所示為加工對象物之化合物單晶晶錠11之立體圖。圖3(B)是圖3(A)所示之化合物單晶晶錠11的正面圖。化合物單晶晶錠(以下有僅簡稱為晶錠的情形)11是由GaN單晶晶錠或SiC單晶晶錠所構成。
晶錠11具有第一端面11a及與第一端面11a相反側的第二端面11b。晶錠11之第一端面11a為了成為雷射光束之照射面而被研磨成鏡面。
晶錠11具有第一定向平面(orientation flat)13、及與第一定向平面13正交之第二定向平面15。第一定向平面13的長度形成為較第二定向平面15的長度長。
第一端面11a是在構成化合物單晶晶錠11之原子量大的原子與原子量小的原子中,排列有原子量小之原子的極性面。因此,第二端面11b為排列有原子量大之原子的
極性面。
當化合物單晶晶錠11為GaN晶錠時,第一端面11a為-c面(即氮(N)極性面),第二端面11b為+c面(即鎵(Ga)極性面)。
另一方面,當化合物單晶晶錠11為SiC晶錠時,第一端面11a為-c面(即碳(C)極性面),第二端面11b為+c面(即矽(Si)極性面)。
再次參照圖1,靜止基台4的左側固定有柱部52,按壓機構54透過形成於柱部52之開口53而可在上下方向上移動地搭載於此柱部52。
如圖4所示,本實施形態之晶圓的生成方法中,使化合物單晶晶錠11之第一端面11a朝上並將晶錠11以例如蠟(wax)或黏著劑固定於支撐台26上。
如上述地,第一端面11a是由構成化合物單晶晶錠11之原子量大的原子與原子量小的原子之中,排列有原子量小之原子的極性面,且在GaN晶錠的情況中為N極性面,在SiC晶錠的情況中為C極性面。
像這樣以支撐台26支撐化合物單晶晶錠11後,實施分離面形成步驟,該分離面形成步驟是將對已固定於支撐台26之化合物單晶晶錠11具有穿透性之波長(例如1064nm之波長)之雷射光束的聚光點定位在與第一端面11a距離相當於生成之晶圓厚度的深度(圖5之D1),並且相對地移動聚光點與化合物單晶晶錠11而將雷射光束照射在第一端面11a,並如圖5所示,形成與第一端面11a平行之改質層
17及從改質層17傳播之裂隙19而形成分離面。
該分離面形成步驟包含改質層形成步驟與分度步驟,該改質層形成步驟是在X軸方向上相對地移動雷射光束之聚光點以在晶錠11之內部形成包含改質層17及由改質層17傳播之裂隙19的分離面;該分度步驟是在Y軸方向上將聚光點相對地移動而分度移動預定量。
在此,較理想之實施形態的改質層形成步驟之雷射加工方法是設定如下。
光源:Nd:YAG脈衝雷射
波長:1064nm
重複頻率:80kHz
平均輸出:3.2W
脈衝寬度:4ns
光點點徑:10μm
聚光鏡之數值孔徑(NA):0.45
分度量:250μm
只要像這樣分度進給預定量,並使在晶錠11之整個區域的深度D1的位置上複數個改質層17及從改質層17傳播之裂隙的形成結束後,就可以實施晶圓生成步驟,該晶圓生成步驟是賦予外力並從由改質層17及裂隙19所構成之分離面將相當於應形成之晶圓厚度的板狀物由化合物單晶晶錠11分離以生成化合物單晶晶圓21。
該晶圓生成步驟是藉由例如圖6所示之按壓機構54而實施。按壓機構54包含:藉由設置於柱部52內之移動
機構而在上下方向上移動的頭部56;及相對於頭部56,如圖6(B)所示地朝箭頭R方向旋轉之按壓構件58。
如圖6(A)所示,將按壓機構54定位在已固定於支撐台26之晶錠11的上方,如圖6(B)所示,將頭部56降下直至按壓構件58壓接到晶錠11之第一端面11a為止。
在已將按壓構件58壓接於晶錠11之第一端面11a的狀態下,將按壓構件58朝箭頭R方向旋轉時,於晶錠11會產生扭轉應力,並且使晶錠11由形成有改質層17及裂隙19的分離起點斷裂,而可從化合物單晶晶錠11生成圖7所示之化合物單晶晶圓21。
實施晶圓生成步驟之後,實施將已使晶圓21分離之化合物單晶晶錠11之第一端面11a磨削以平坦化之平坦化步驟。在此平坦化步驟中,如圖8所示,是使晶錠11之第一端面11a朝上並以磨削裝置之工作夾台60吸引保持晶錠11。
在圖8中,在已固定於磨削單元62的主軸64之前端的輪座66上,是藉由複數個螺絲67而可裝卸地裝設有磨削輪68。磨削輪68是將複數個磨削磨石72環狀地固接於輪基台70之自由端部(下端部)而被構成。
在平坦化步驟中,是在將工作夾台60朝箭頭a所示之方向以例如300rpm旋轉時,使磨削輪68朝箭頭b所示之方向以例如6000rpm旋轉,並且驅動未圖示之磨削單元進給機構使磨削輪68之磨削磨石72接觸晶錠11之第一端面11a。
然後,以預定之磨削進給速度(例如0.1μm/s)將磨削輪68磨削進給,以將第一端面11a磨削預定量而將第一端面11a平坦化。較理想的是,實施此平坦化步驟後,研磨已磨削過之第一端面11a以加工成鏡面。
實施平坦化步驟後,如圖9所示,化合物單晶晶錠11之第一端面11a會被平坦化,較理想的是,於將第一端面11a藉由研磨加工而加工成鏡面後,再次實施分離面形成步驟。
在此,在平坦化步驟中,關於對磨削加工之面為第一端面11a之情況、與為第二端面11b之情況進行了比較的加工結果,顯示如下。
磨削加工比較例(1)
化合物單晶晶錠:GaN晶錠
磨削量:5μm
Ga極性面之磨削:磨石之磨耗量(6.3μm),磨削時間(2.5分鐘)
N極性面之磨削:磨石之磨耗量(2.5μm),磨削時間(1分鐘)
磨削加工比較例(2)
化合物單晶晶錠:SiC晶錠
磨削量:5μm
Si極性面之磨削:磨石之磨耗量(7.5μm),磨削時間(3分鐘)
C極性面之磨削:磨石之磨耗量(3.5μm),磨削時間
(1.5分鐘)
根據上述之實施形態可知,由於是構成為:在分離面形成步驟中,從構成化合物單晶晶錠11之原子量大的原子與原子量小的原子之中,排列有原子量小之原子的極性面(即第一端面11a)側照射雷射光束,而在晶錠11之內部形成由改質層17及裂隙19所構成的分離面,且在平坦化步驟中,磨削排列有原子量小之原子的極性面(即第一端面11a),因此相較於磨削第二端面11b之情況使磨削磨石72的消耗量減少為1/2~1/3,並且磨削所需要的時間也減少為1/2~1/3。
11‧‧‧化合物單晶晶錠
11a‧‧‧第一端面
11b‧‧‧第二端面
17‧‧‧改質層
19‧‧‧裂隙
D1‧‧‧深度
X、Y、Z‧‧‧方向
Claims (3)
- 一種晶圓的生成方法,是由具有第一端面及與該第一端面為相反側的第二端面的化合物單晶晶錠生成晶圓,該晶圓的生成方法之特徵在於包含:分離面形成步驟,以工作夾台保持化合物單晶晶錠之該第二端面,且將對化合物單晶晶錠具有穿透性之波長的雷射光束的聚光點定位在與該第一端面距離相當於生成之晶圓厚度的深度,並且相對地移動該聚光點與化合物單晶晶錠來將該雷射光束照射在該第一端面,而形成由與該第一端面平行之改質層及從該改質層伸長之裂隙構成的分離面;晶圓生成步驟,實施該分離面形成步驟之後,從該分離面將相當於晶圓厚度的板狀物由化合物單晶晶錠分離以生成晶圓;及平坦化步驟,實施該晶圓生成步驟之後,將已使晶圓分離之化合物單晶晶錠之該第一端面磨削以平坦化,在該分離面形成步驟中,將構成化合物單晶晶錠之原子量大的原子與原子量小的原子之中,排列有原子量小之原子的極性面作為該第一端面,且在該平坦化步驟中,是磨削排列有原子量小之原子的極性面的該第一端面。
- 如請求項1之晶圓的生成方法,其中,該化合物單晶晶 錠為SiC晶錠,且使排列有碳(C)之極性面成為該第一端面。
- 如請求項1之晶圓的生成方法,其中,該化合物單晶晶錠為GaN晶錠,且使排列有氮(N)之極性面成為該第一端面。
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KR101178400B1 (ko) * | 2010-12-31 | 2012-08-30 | 삼성코닝정밀소재 주식회사 | 단면미러 질화갈륨 기판 제조방법 |
JP5917862B2 (ja) * | 2011-08-30 | 2016-05-18 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
JP5946260B2 (ja) * | 2011-11-08 | 2016-07-06 | 株式会社ディスコ | ウエーハの加工方法 |
KR101309805B1 (ko) * | 2011-12-28 | 2013-09-23 | 주식회사 이오테크닉스 | 인고트 절단 방법 |
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2015
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TW200942655A (en) * | 2008-02-25 | 2009-10-16 | Sixpoint Materials Inc | Method for producing group III nitride wafers and group III nitride wafers |
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CN106064425A (zh) | 2016-11-02 |
US10563321B2 (en) | 2020-02-18 |
US10094047B2 (en) | 2018-10-09 |
JP2016207703A (ja) | 2016-12-08 |
KR20160123232A (ko) | 2016-10-25 |
JP6444249B2 (ja) | 2018-12-26 |
US20180237947A1 (en) | 2018-08-23 |
KR102599569B1 (ko) | 2023-11-06 |
CN110712306A (zh) | 2020-01-21 |
KR20220162659A (ko) | 2022-12-08 |
DE102016205918A1 (de) | 2016-10-20 |
CN106064425B (zh) | 2020-03-17 |
US20160305042A1 (en) | 2016-10-20 |
TW201704568A (zh) | 2017-02-01 |
CN110712306B (zh) | 2021-12-07 |
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