CN106030803B - 摄像元件和摄像装置 - Google Patents

摄像元件和摄像装置 Download PDF

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Publication number
CN106030803B
CN106030803B CN201580007518.0A CN201580007518A CN106030803B CN 106030803 B CN106030803 B CN 106030803B CN 201580007518 A CN201580007518 A CN 201580007518A CN 106030803 B CN106030803 B CN 106030803B
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China
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potential
transistor
pixel region
pixel
negative
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Chinese (zh)
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CN106030803A (zh
Inventor
植野洋介
池田裕介
松本静德
春田勉
吉川玲
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Sony Corp
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Sony Corp
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Priority to CN201910504605.7A priority Critical patent/CN110190081B/zh
Priority to CN201910504668.2A priority patent/CN110248122B/zh
Publication of CN106030803A publication Critical patent/CN106030803A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201580007518.0A 2014-02-25 2015-02-17 摄像元件和摄像装置 Active CN106030803B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201910504605.7A CN110190081B (zh) 2014-02-25 2015-02-17 摄像元件和电子装置
CN201910504668.2A CN110248122B (zh) 2014-02-25 2015-02-17 摄像元件和摄像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014034369A JP6094511B2 (ja) 2014-02-25 2014-02-25 撮像素子および撮像装置
JP2014-034369 2014-02-25
PCT/JP2015/000720 WO2015129197A1 (en) 2014-02-25 2015-02-17 Imaging element and imaging apparatus

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CN201910504668.2A Division CN110248122B (zh) 2014-02-25 2015-02-17 摄像元件和摄像装置
CN201910504605.7A Division CN110190081B (zh) 2014-02-25 2015-02-17 摄像元件和电子装置

Publications (2)

Publication Number Publication Date
CN106030803A CN106030803A (zh) 2016-10-12
CN106030803B true CN106030803B (zh) 2019-07-12

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CN201910504668.2A Active CN110248122B (zh) 2014-02-25 2015-02-17 摄像元件和摄像装置
CN201910504605.7A Active CN110190081B (zh) 2014-02-25 2015-02-17 摄像元件和电子装置

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CN201910504605.7A Active CN110190081B (zh) 2014-02-25 2015-02-17 摄像元件和电子装置

Country Status (7)

Country Link
US (3) US10008525B2 (enExample)
EP (3) EP3111479B1 (enExample)
JP (1) JP6094511B2 (enExample)
KR (3) KR102551950B1 (enExample)
CN (3) CN106030803B (enExample)
TW (1) TWI656630B (enExample)
WO (1) WO2015129197A1 (enExample)

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JP6094511B2 (ja) * 2014-02-25 2017-03-15 ソニー株式会社 撮像素子および撮像装置
US9960783B2 (en) 2015-09-18 2018-05-01 Taiwan Semiconductor Manufacturing Company Ltd. Conditional correlated multiple sampling single slope analog-to-digital converter, and associated image sensor system and method
CN113099139B (zh) * 2015-09-30 2024-06-21 株式会社尼康 摄像元件及电子相机
JP6646824B2 (ja) * 2016-01-22 2020-02-14 パナソニックＩｐマネジメント株式会社 撮像装置
JP2018019335A (ja) * 2016-07-29 2018-02-01 ソニー株式会社 撮像素子および撮像装置
JP7289079B2 (ja) * 2018-02-28 2023-06-09 パナソニックＩｐマネジメント株式会社 撮像装置
WO2020183809A1 (ja) * 2019-03-13 2020-09-17 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器、および、固体撮像装置の制御方法
KR20210034918A (ko) * 2019-09-23 2021-03-31 삼성전자주식회사 전하 펌프 회로 및 이를 포함하는 이미지 센서
EP3828846B1 (en) * 2019-11-26 2022-07-13 Axis AB Camera device
US11095843B2 (en) * 2019-12-02 2021-08-17 Sony Semiconductor Solutions Corporation Imaging devices and imaging apparatuses, and methods for the same
US12137297B2 (en) 2019-12-02 2024-11-05 Sony Semiconductor Solutions Corporation Imaging devices and imaging apparatuses, and methods for the same
WO2021153428A1 (ja) * 2020-01-29 2021-08-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器及び撮像方法
JPWO2021161791A1 (enExample) * 2020-02-13 2021-08-19
WO2023002566A1 (ja) 2021-07-20 2023-01-26 オリンパスメディカルシステムズ株式会社 撮像装置、スコープ、および内視鏡システム
JP2023142256A (ja) * 2022-03-24 2023-10-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び半導体装置の製造方法
US20230411431A1 (en) * 2022-05-17 2023-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked cmos image sensor and method of manufacturing the same
CN120693990A (zh) 2023-02-24 2025-09-23 索尼半导体解决方案公司 固体摄像装置和电子设备
WO2026021750A1 (en) * 2024-07-25 2026-01-29 ams Sensors Belgium BV Image sensor and method of operating an image sensor

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US6437635B1 (en) * 1999-03-26 2002-08-20 Sharp Kabushiki Kaisha Amplification type solid states imaging device output circuit capable of stably operating at a low voltage
JP2003023573A (ja) * 2001-07-11 2003-01-24 Asahi Kasei Corp ビジョンチップ
CN102186024A (zh) * 2005-11-01 2011-09-14 索尼株式会社 物理量检测装置和成像设备

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JP3951879B2 (ja) * 2002-10-04 2007-08-01 ソニー株式会社 固体撮像素子及びその駆動方法
JP4807014B2 (ja) * 2005-09-02 2011-11-02 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US20070129067A1 (en) 2005-11-04 2007-06-07 Summer Robert D Ring-tone system and methodology
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US6437635B1 (en) * 1999-03-26 2002-08-20 Sharp Kabushiki Kaisha Amplification type solid states imaging device output circuit capable of stably operating at a low voltage
JP2003023573A (ja) * 2001-07-11 2003-01-24 Asahi Kasei Corp ビジョンチップ
CN102186024A (zh) * 2005-11-01 2011-09-14 索尼株式会社 物理量检测装置和成像设备

Also Published As

Publication number Publication date
US20170053957A1 (en) 2017-02-23
JP6094511B2 (ja) 2017-03-15
WO2015129197A1 (en) 2015-09-03
US20200098805A1 (en) 2020-03-26
EP3111479A1 (en) 2017-01-04
JP2015159501A (ja) 2015-09-03
CN110190081B (zh) 2020-12-18
EP3547370B1 (en) 2023-06-28
TW201535702A (zh) 2015-09-16
CN110190081A (zh) 2019-08-30
US10529756B2 (en) 2020-01-07
US10008525B2 (en) 2018-06-26
KR20220025915A (ko) 2022-03-03
US20180269243A1 (en) 2018-09-20
US10840283B2 (en) 2020-11-17
TWI656630B (zh) 2019-04-11
KR20160125954A (ko) 2016-11-01
KR102551950B1 (ko) 2023-07-06
EP4181204A1 (en) 2023-05-17
KR102503871B1 (ko) 2023-02-27
CN110248122B (zh) 2021-09-17
EP3111479B1 (en) 2019-05-22
CN110248122A (zh) 2019-09-17
KR102369400B1 (ko) 2022-03-04
KR20230030034A (ko) 2023-03-03
CN106030803A (zh) 2016-10-12
EP3547370A1 (en) 2019-10-02

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