CN105938797B - 用于蚀刻氧化铟层的蚀刻剂组合物及使用其制作显示基板的方法 - Google Patents

用于蚀刻氧化铟层的蚀刻剂组合物及使用其制作显示基板的方法 Download PDF

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CN105938797B
CN105938797B CN201610109143.5A CN201610109143A CN105938797B CN 105938797 B CN105938797 B CN 105938797B CN 201610109143 A CN201610109143 A CN 201610109143A CN 105938797 B CN105938797 B CN 105938797B
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acid
etchant composition
compounds
oxide layer
indium oxide
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Chinese (zh)
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CN105938797A (zh
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刘仁浩
南基龙
李承洙
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Dongwoo Fine Chem Co Ltd
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Dongwoo Fine Chem Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
CN201610109143.5A 2015-03-05 2016-02-26 用于蚀刻氧化铟层的蚀刻剂组合物及使用其制作显示基板的方法 Active CN105938797B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150030989A KR102259146B1 (ko) 2015-03-05 2015-03-05 인듐 산화막의 식각액 조성물 및 이를 이용한 표시 기판의 제조 방법
KR10-2015-0030989 2015-03-05

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CN105938797A CN105938797A (zh) 2016-09-14
CN105938797B true CN105938797B (zh) 2020-04-17

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CN (1) CN105938797B (ko)
TW (1) TWI677560B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102579768B1 (ko) * 2018-10-05 2023-09-19 솔브레인 주식회사 식각액 조성물 및 이를 이용한 금속막 식각 방법
KR102661845B1 (ko) 2018-10-11 2024-04-30 삼성디스플레이 주식회사 식각액 및 이를 이용한 표시 장치의 제조 방법
CN109536963B (zh) * 2019-01-30 2021-02-09 上海镁印科技有限公司 一种氨基甲酸酯类化合物在镁合金蚀刻添加剂中的应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101886266A (zh) * 2009-05-14 2010-11-17 三星电子株式会社 蚀刻剂和使用蚀刻剂制造阵列基板的方法
CN102747367A (zh) * 2011-02-15 2012-10-24 三星电子株式会社 非卤化蚀刻剂和使用该非卤化蚀刻剂制造显示基底的方法

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JP2755376B2 (ja) 1994-06-03 1998-05-20 株式会社フロンテック 電気光学素子の製造方法
KR20000017470A (ko) 1998-08-18 2000-03-25 이기원 아이티오 에칭 조성물
JP4170950B2 (ja) 2003-10-10 2008-10-22 松下電器産業株式会社 光学デバイスおよびその製造方法
KR101151952B1 (ko) * 2005-11-29 2012-06-01 동우 화인켐 주식회사 인듐산화막의 식각용액 및 그 식각방법
JP5354989B2 (ja) * 2008-08-14 2013-11-27 関東化学株式会社 透明導電膜用エッチング液組成物
UY32427A (es) 2009-02-13 2010-09-30 Boheringer Ingelheim Internat Gmbh Composicion farmaceutica, forma farmaceutica, procedimiento para su preparacion, metodos de tratamiento y usos de la misma
KR20110087582A (ko) * 2010-01-26 2011-08-03 삼성전자주식회사 식각액 조성물 및 이를 이용한 식각 방법
JP5788701B2 (ja) * 2011-04-11 2015-10-07 関東化学株式会社 透明導電膜用エッチング液組成物
CN102983101B (zh) * 2011-08-04 2015-06-17 东友精细化工有限公司 液晶显示装置用阵列基板的制造方法
CN102732252A (zh) * 2012-06-21 2012-10-17 江阴润玛电子材料股份有限公司 一种新型王水系ito蚀刻液及制备方法
KR101394133B1 (ko) * 2012-08-22 2014-05-15 주식회사 이엔에프테크놀로지 몰리브덴 합금막 및 인듐 산화막 식각액 조성물
KR101905195B1 (ko) * 2012-12-24 2018-10-05 동우 화인켐 주식회사 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101886266A (zh) * 2009-05-14 2010-11-17 三星电子株式会社 蚀刻剂和使用蚀刻剂制造阵列基板的方法
CN102747367A (zh) * 2011-02-15 2012-10-24 三星电子株式会社 非卤化蚀刻剂和使用该非卤化蚀刻剂制造显示基底的方法

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Publication number Publication date
TWI677560B (zh) 2019-11-21
KR102259146B1 (ko) 2021-06-01
TW201638303A (zh) 2016-11-01
CN105938797A (zh) 2016-09-14
KR20160107761A (ko) 2016-09-19

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