CN105934818B - 用于驱动高侧功率晶体管的集成高侧栅极驱动器结构和电路 - Google Patents

用于驱动高侧功率晶体管的集成高侧栅极驱动器结构和电路 Download PDF

Info

Publication number
CN105934818B
CN105934818B CN201580005223.XA CN201580005223A CN105934818B CN 105934818 B CN105934818 B CN 105934818B CN 201580005223 A CN201580005223 A CN 201580005223A CN 105934818 B CN105934818 B CN 105934818B
Authority
CN
China
Prior art keywords
trap
diffusion
high side
voltage
class
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580005223.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN105934818A (zh
Inventor
艾伦·诺格拉斯·尼尔森
米克尔·霍耶尔比
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cirrus Logic International Semiconductor Ltd
Original Assignee
Infineon Technologies Austria AG
Merus Audio ApS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Austria AG, Merus Audio ApS filed Critical Infineon Technologies Austria AG
Publication of CN105934818A publication Critical patent/CN105934818A/zh
Application granted granted Critical
Publication of CN105934818B publication Critical patent/CN105934818B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201580005223.XA 2014-01-21 2015-01-16 用于驱动高侧功率晶体管的集成高侧栅极驱动器结构和电路 Active CN105934818B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14151919.9 2014-01-21
EP14151919 2014-01-21
PCT/EP2015/050798 WO2015110362A1 (en) 2014-01-21 2015-01-16 Integrated high side gate driver structure and circuit for driving high side power transistors

Publications (2)

Publication Number Publication Date
CN105934818A CN105934818A (zh) 2016-09-07
CN105934818B true CN105934818B (zh) 2019-03-29

Family

ID=49955260

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580005223.XA Active CN105934818B (zh) 2014-01-21 2015-01-16 用于驱动高侧功率晶体管的集成高侧栅极驱动器结构和电路

Country Status (6)

Country Link
US (2) US10096705B2 (enExample)
EP (1) EP3097584B1 (enExample)
JP (1) JP6486385B2 (enExample)
KR (1) KR102287060B1 (enExample)
CN (1) CN105934818B (enExample)
WO (1) WO2015110362A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105720099A (zh) * 2014-12-02 2016-06-29 无锡华润上华半导体有限公司 N型横向双扩散金属氧化物半导体场效应管
WO2016091593A1 (en) 2014-12-09 2016-06-16 Merus Audio Aps A regulated high side gate driver circuit for power transistors
US9571038B1 (en) * 2015-08-31 2017-02-14 Nxp B.V. Driver circuit for a power stage of a class-D amplifier
KR20170076497A (ko) * 2015-12-24 2017-07-04 삼성전기주식회사 드라이브 회로
JP6873876B2 (ja) * 2017-09-21 2021-05-19 株式会社東芝 駆動回路
TWI628792B (zh) * 2017-09-21 2018-07-01 Nuvoton Technology Corporation 半導體基底結構及半導體裝置
US11041890B2 (en) * 2017-10-20 2021-06-22 Synaptics Incorporated Current measurement at a switching amplifier output
US10498315B2 (en) * 2018-03-05 2019-12-03 Texas Instruments Incorporated Level shifter circuit
US10833083B2 (en) * 2018-04-05 2020-11-10 Synaptics Corporation Power device structure with improved reliability and efficiency
TWI673869B (zh) * 2018-07-31 2019-10-01 新唐科技股份有限公司 高壓半導體裝置及其製造方法
DE102018119098B4 (de) 2018-08-06 2020-02-20 Infineon Technologies Dresden GmbH & Co. KG Elektronische schaltung mit einem transistorbauelement und einem pegelumsetzer
US10651723B1 (en) * 2018-10-22 2020-05-12 Infineon Technologies Austria Ag Method for static gate clamping in multi-output gate driver systems
CN111276491A (zh) * 2018-12-04 2020-06-12 世界先进积体电路股份有限公司 半导体结构及其形成方法
EP3761148B1 (en) * 2019-07-04 2023-06-07 Advanced Energy Industries, Inc. High voltage power supply
US11075622B1 (en) * 2020-09-10 2021-07-27 Allegro Microsystems, Llc Switch turn on in a gate driver circuit
US11082038B1 (en) 2020-09-10 2021-08-03 Allegro Microsystems, Llc Gate driver isolating circuit
CN113054962B (zh) * 2021-03-25 2024-03-19 苏州华太电子技术股份有限公司 共源共栅GaN功率器件及其半桥应用电路
CN114679036B (zh) * 2022-05-11 2023-05-26 电子科技大学 一种用于功率ldmos的高速栅极驱动电路
US12114422B2 (en) * 2022-12-16 2024-10-08 Bae Systems Controls Inc. High voltage gate drive circuitry
US12609271B2 (en) 2023-10-17 2026-04-21 Advanced Energy Industries, Inc. High voltage power supplies for fast voltage changes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020053685A1 (en) * 1999-05-06 2002-05-09 Sameer Pendharkar High side and low side guard rings for lowest parasitic performance in an H-bridge configuration
CN1443396A (zh) * 2000-07-12 2003-09-17 单晶片电力系统公司 D类声频放大器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3372171B2 (ja) 1995-08-29 2003-01-27 東芝マイクロエレクトロニクス株式会社 半導体装置
TW417307B (en) * 1998-09-23 2001-01-01 Koninkl Philips Electronics Nv Semiconductor device
JP2001007286A (ja) * 1999-06-18 2001-01-12 Fujitsu Ltd 半導体装置
JP4531276B2 (ja) * 2001-02-27 2010-08-25 三菱電機株式会社 半導体装置
US7436043B2 (en) * 2004-12-21 2008-10-14 Taiwan Semiconductor Manufacturing Co., Ltd N-well and N+ buried layer isolation by auto doping to reduce chip size
US8427235B2 (en) 2007-04-13 2013-04-23 Advanced Analogic Technologies, Inc. Power-MOSFETs with improved efficiency for multi-channel class-D audio amplifiers and packaging thereof
US8283979B2 (en) * 2011-01-19 2012-10-09 Harman International Industries, Incorporated Amplifier system for a power converter
US9231583B2 (en) 2011-06-14 2016-01-05 Merus Audio Aps Power transistor gate driver

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020053685A1 (en) * 1999-05-06 2002-05-09 Sameer Pendharkar High side and low side guard rings for lowest parasitic performance in an H-bridge configuration
CN1443396A (zh) * 2000-07-12 2003-09-17 单晶片电力系统公司 D类声频放大器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Junction Isolation for high voltage integrated circuits;ARAD E ET AL;《ELECTRICAL & ELECTRONICS ENGINEERS IN ISREAL （IEEE）， 2012 IEEE 27TH CONVENTION OF， IEEE》;20121114;1-4 *

Also Published As

Publication number Publication date
KR102287060B1 (ko) 2021-08-09
US20180315849A1 (en) 2018-11-01
KR20160111984A (ko) 2016-09-27
US10096705B2 (en) 2018-10-09
JP2017505549A (ja) 2017-02-16
EP3097584B1 (en) 2023-03-01
EP3097584A1 (en) 2016-11-30
US20160336442A1 (en) 2016-11-17
CN105934818A (zh) 2016-09-07
WO2015110362A1 (en) 2015-07-30
JP6486385B2 (ja) 2019-03-20

Similar Documents

Publication Publication Date Title
KR102287060B1 (ko) 하이 측 전력 트랜지스터들을 구동하기 위한 통합된 하이 측 게이트 구동기 구조 및 회로
US10854500B2 (en) Gate driver circuitry for power transistors
US10686436B2 (en) Gate drivers and voltage regulators for gallium nitride devices and integrated circuits
EP2517342B1 (en) Over voltage protection of a switching converter
CN206363743U (zh) 用于半桥或全桥输出驱动级的栅极驱动器电路及电子系统
CN102769379B (zh) 一种绝缘硅工艺上的正负压产生电路
CN1325560A (zh) 不受电池极性影响的集成电路放大器
TW200525869A (en) Switching power supply and semiconductor IC
US20120075001A1 (en) Level shift circuit and switching regulator using the same
CN105024676B (zh) 高压自举式栅极驱动装置
CN110635687A (zh) 降压转换器电路以及降压转换方法
CN106104802A (zh) 用于降压转换器的单片集成晶体管
JP6647932B2 (ja) オーディオアンプ回路、それを用いたオーディオ出力装置、およびそれを用いた電子機器
CN117375410A (zh) 一种升压电荷泵电路及功率放大器
TWI484743B (zh) 以低壓驅動之升壓電路與相關方法
JP7518590B2 (ja) Ｐ－ｎバイモーダルパワーデバイスのための統合されたハイサイドドライバ
CN116339430B (zh) 一种可耐极低负压的浮动衬底电压电路
CN221728160U (zh) 一种升压电荷泵电路及功率放大器
JP2008061390A (ja) 半導体装置、降圧チョッパレギュレータ、電子機器
CN118589847A (zh) 浮动电压源电路
JP2001007121A (ja) 横形高耐圧接合型トランジスタ
TW201348915A (zh) 電源供應電路和電源供應方法
Hirayama et al. Effect on voltage dividing class E amplifier by parasitic capacitances of drive circuit

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: Denmark Herlev

Applicant after: Infineon Technologies Denmark Ltd.

Address before: Denmark Herlev

Applicant before: MERUS AUDIO APS

CB02 Change of applicant information
TA01 Transfer of patent application right

Effective date of registration: 20181016

Address after: Villach

Applicant after: INFINEON TECHNOLOGIES AUSTRIA AG

Address before: Denmark Herlev

Applicant before: Infineon Technologies Denmark Ltd.

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20250409

Address after: Britain

Patentee after: CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR Ltd.

Country or region after: Britain

Address before: Villach

Patentee before: INFINEON TECHNOLOGIES AUSTRIA AG

Country or region before: Austria

TR01 Transfer of patent right